公开(公告)号：US20180040781A1

公开(公告)日：2018-02-08

申请号：US15788645

申请日：2017-10-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Michael BINDER ,  Alexander LINKOV ,  Thomas ZEILER ,  Peter BRICK

IPC: H01L33/48 ,  H01L33/54 ,  H01L33/44

Abstract: An optoelectronic semiconductor component comprising a connection carrier with a mounting face and an electrically insulating base member. An optoelectronic semiconductor chip is arranged on the mounting face of the connection carrier. A radiation-transmissive body having four side faces is provided. The radiation-transmissive body surrounds the semiconductor chip in such a way that the radiation-transmissive body envelops outer faces of the optoelectronic semiconductor chip not facing the connection carrier in form-fitting manner. The radiation-transmissive body comprises at least one side face which extends at least in places at an angle of between 60° and 70° to the mounting face. The base member has a thickness which amounts to at most 250 μm.

公开(公告)号：US20160370513A1

公开(公告)日：2016-12-22

申请号：US15255068

申请日：2016-09-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alexander LINKOV ,  Matthias SABATHIL

IPC: G02B5/02 ,  H01L33/50 ,  H01L33/56

Abstract: The invention relates to an optoelectronic device (101), comprising: a semiconductor layer sequence (103) comprising an emitter layer (105) for emitting electromagnetic radiation, a converter (113) for converting electromagnetic radiation with a first wavelength into an electromagnetic radiation with a second wavelength which differs from the first wavelength, a scattering body (109) for scattering at least a part of the electromagnetic radiation emitted by the emitter layer (105) in the direction of the converter (113) in order to convert at least a part of the emitted electromagnetic radiation, wherein the scattering body (109) comprises a positive, temperature-dependent scattering cross-section and so, as the temperature increases, scattering of the electromagnetic radiation in the scattering body (109) in the direction of the converter can be increased. The invention also relates to a scattering body (109).

Abstract translation: 本发明涉及一种光电子器件（101），包括：半导体层序列（103），包括用于发射电磁辐射的发射极层（105），用于将具有第一波长的电磁辐射转换为电磁辐射的转换器（113） 与第一波长不同的第二波长，散射体（109），用于在转换器（113）的方向上散射由发射极层（105）发射的电磁辐射的至少一部分，以便将至少一个 发射的电磁辐射的一部分，其中散射体（109）包括正的温度依赖的散射截面，因此随着温度的升高，散射体（109）中的电磁辐射在 转换器可以增加。 本发明还涉及散射体（109）。

公开(公告)号：US20160247966A1

公开(公告)日：2016-08-25

申请号：US15144728

申请日：2016-05-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias SABATHIL ,  Andreas PLÖßL ,  Hans-Jürgen LUGAUER ,  Alexander LINKOV ,  Patrick RODE

IPC: H01L33/08 ,  H01L33/00 ,  H01L33/06 ,  H01L33/50 ,  H01L33/22 ,  H01L33/32

CPC classification number: H01L33/08 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/26 ,  H01L33/32 ,  H01L33/502 ,  H01L33/504

Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.

Abstract translation: 本发明涉及一种发光半导体部件，包括：第一半导体本体（1），其包括活性区（11），其中在发光半导体部件产生电磁辐射的操作期间，产生至少一些 所述第一半导体本体（1）通过辐射出射表面（1a）离开所述第一半导体本体（1），以及 - 第二半导体本体（2），其适于将所述电磁辐射转换为具有较长波长的转换电磁辐射，其中，所述第一半导体 主体（1）和第二半导体本体（2）彼此分开制造， - 第二半导体体（2）是电不活动的，并且第二半导体本体（2）与辐射出口表面 1a），并且在没有连接装置的情况下附接到第一半导体本体（1）。

公开(公告)号：US20200295240A1

公开(公告)日：2020-09-17

申请号：US16651218

申请日：2018-12-11

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Alexander LINKOV ,  Hubert HALBRITTER

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/42

Abstract: A light-emitting semiconductor device is specified which comprises a light-emitting semiconductor chip having a main surface comprising a radiation-outcoupling surface via which, during operation, a first light in a first wavelength range is emitted. A wavelength conversion layer for converting at least part of the first light into second light in a second wavelength range different from the first wavelength range is applied onto a first sub-region of the main surface. An optical feedback element is applied directly to a second sub-region of the main surface adjacent to the first sub-region, wherein the optical feedback element deflects first light emitted from the second sub-region in the direction of the radiation-outcoupling surface and/or in the direction of the wavelength conversion layer.

公开(公告)号：US20160149101A1

公开(公告)日：2016-05-26

申请号：US14900144

申请日：2014-06-25

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank SINGER ,  Wolfgang MOENCH ,  Alexander LINKOV

IPC: H01L33/60 ,  H01L33/50 ,  H01S5/022 ,  H01L33/48

CPC classification number: H01L33/60 ,  G02B5/0242 ,  G02B6/0061 ,  G02B19/0061 ,  H01L33/505 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0091 ,  H01S5/0228

Abstract: In at least one embodiment, the optoelectronic semiconductor component (1) comprises a cast body (4). At least one optoelectronic semiconductor chip (3) is designed to generate radiation and is situated in a recess (43) in the cast body (4). The semiconductor chip (3) has a main radiation side (30) having an edge length (L). At least one lens plate (5), which covers the recess (43), is arranged downstream of the semiconductor chip (1) in a main radiation direction (M). The lens plate (5) has a plurality of structural elements (55) on an upper side (50) that faces away from the semiconductor chip (1). The lens plate (5) has a diameter (D) that is at least 1.5 times the edge length (L). A thickness (H) of the lens plate (5) is at least 0.1 times and at most 1.5 times the diameter (D). The lens plate (5) covers the main radiation side (30) completely.

Abstract translation: 在至少一个实施例中，光电半导体部件（1）包括铸造体（4）。 至少一个光电子半导体芯片（3）被设计成产生辐射并且位于铸体（4）中的凹部（43）中。 半导体芯片（3）具有边缘长度（L）的主辐射侧（30）。 覆盖凹部（43）的至少一个透镜板（5）以主辐射方向（M）布置在半导体芯片（1）的下游。 透镜板（5）在远离半导体芯片（1）的上侧（50）上具有多个结构元件（55）。 透镜板（5）的直径（D）至少为边缘长度（L）的1.5倍。 透镜板（5）的厚度（H）为直径（D）的至少0.1倍且至多1.5倍。 透镜板（5）完全覆盖主辐射侧（30）。