公开(公告)号：US09936153B1

公开(公告)日：2018-04-03

申请号：US15285352

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14636 ,  H01L27/14656 ,  H04N5/374 ,  H04N5/378

Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.

公开(公告)号：US12247873B1

公开(公告)日：2025-03-11

申请号：US18438791

申请日：2024-02-12

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Rui Wang ,  Tiejun Dai ,  Lindsay Alexander Grant ,  Keiji Mabuchi

IPC: G01J1/44

Abstract: A method of counting photons using a plurality of single photon avalanche diodes (SPADs), including initiating a detection phase, enabling each single photon avalanche diode (SPAD) of the plurality of SPADs for a period of time within the detection phase, accumulating a SPAD event from each SPAD of the plurality of SPADs, wherein each SPAD event corresponds to a detection of a single photon, determining a counter code at an end of the detection phase, where the counter code corresponds to accumulated SPAD events, and enabling one or more SPADs of the plurality of SPADs within an exposure phase based on the counter code, where the counter code is greater than an expected number of the SPAD events during the exposure phase, and where the expected number of SPAD events during the exposure phase is based on the counter code that is determined at the end of the detection phase.

公开(公告)号：US20210358993A1

公开(公告)日：2021-11-18

申请号：US16877077

申请日：2020-05-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Bill Phan ,  Keiji Mabuchi ,  Seong Yeol Mun ,  Yuanliang Liu ,  Vincent Venezia

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/355

Abstract: A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.

公开(公告)号：US10972687B2

公开(公告)日：2021-04-06

申请号：US16870159

申请日：2020-05-08

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi

IPC: H01L27/146 ,  H04N5/353 ,  H04N5/374 ,  G01S7/4863 ,  H04N5/378 ,  H04N13/254 ,  G01S17/894

Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.

公开(公告)号：US20200264309A1

公开(公告)日：2020-08-20

申请号：US16870159

申请日：2020-05-08

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi

IPC: G01S17/89 ,  H01L27/146 ,  H04N5/374 ,  G01S7/4863 ,  H04N5/378 ,  H04N13/254

Abstract: An image sensor including a photodiode, a first doped region, a second doped region, a first storage node, a second storage node, a first vertical transfer gate, and a second vertical transfer gate is presented. The photodiode is disposed in a semiconductor material to convert image light to an electric signal. The first doped region and the second doped region are disposed in the semiconductor material between a first side of the semiconductor material and the photodiode. The first doped region is positioned between the first storage node and the second storage node while the second doped region is positioned between the second storage node and the first doped region. The vertical transfer gates are coupled between the photodiode to transfer the electric signal from the photodiode to a respective one of the storage nodes in response to a signal.

公开(公告)号：US20190356872A1

公开(公告)日：2019-11-21

申请号：US15983954

申请日：2018-05-18

Applicant: OmniVision Technologies, Inc.

Inventor： Sohei Manabe ,  Keiji Mabuchi

IPC: H04N5/353 ,  H04N5/378 ,  H04N5/3745 ,  H04N5/355

Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a first transfer gate is coupled to the photodiode to extract image charge from the photodiode in response to a first transfer signal. A first storage gate is coupled to the first transfer gate to receive the image charge from the first transfer gate, and a first output gate is coupled to the first storage gate to receive the image charge from the first storage gate. A first capacitor is coupled to the first output gate to store the image charge.

公开(公告)号：US20180302579A1

公开(公告)日：2018-10-18

申请号：US15485534

申请日：2017-04-12

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Duli Mao ,  Hiroaki Ebihara ,  Kazufumi Watanabe

IPC: H04N5/355 ,  H04N5/378 ,  H04N5/3745 ,  H01L27/146

CPC classification number: H04N5/3559 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H04N5/37452 ,  H04N5/378

Abstract: A pixel circuit for use in a high dynamic range (HDR) image sensor includes a photodiode and a floating diffusion is disposed in the first semiconductor wafer. A transfer transistor is disposed in the first semiconductor wafer and is adapted to be switched on to transfer the charge carriers photogenerated in the photodiode to the floating diffusion. An in-pixel capacitor is disposed in a second semiconductor wafer. The first semiconductor wafer is stacked with and coupled to the second semiconductor wafer. A dual floating diffusion (DFD) transistor is disposed in the first semiconductor wafer. The in-pixel capacitor is selectively coupled to the floating diffusion through the DFD transistor. The floating diffusion is set to low conversion gain in response to the in-pixel capacitor being coupled to the floating diffusion, and high conversion gain in response to the in-pixel capacitor being decoupled from the floating diffusion.

公开(公告)号：US09967504B1

公开(公告)日：2018-05-08

申请号：US15480833

申请日：2017-04-06

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Gang Chen

IPC: H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/378 ,  H01L27/14605 ,  H01L27/1463 ,  H01L27/14643 ,  H04N5/374

Abstract: A pixel circuit for use in an image sensor includes an unpinned photodiode disposed in a semiconductor material. The unpinned photodiode adapted to photogenerate charge carriers in response to incident light. A floating diffusion is disposed in the semiconductor and coupled to receive the charge carriers photogenerated in the unpinned photodiode. A transfer transistor is disposed in the semiconductor material and coupled between the unpinned photodiode and the floating diffusion. The transfer transistor is adapted to be switched on to transfer the charge carriers photogenerated in the unpinned photodiode to the floating diffusion. A boost capacitor is disposed over a surface of the semiconductor material proximate to the unpinned photodiode. The boost capacitor is coupled to receive a photodiode boost signal while the transfer transistor is switched on to further drive the charge carriers photogenerated in the unpinned photodiode to the floating diffusion.

公开(公告)号：US20180097030A1

公开(公告)日：2018-04-05

申请号：US15284961

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sohei Manabe ,  Keiji Mabuchi ,  Takayuki Goto ,  Vincent Venezia ,  Boyd Albert Fowler ,  Eric A. G. Webster

IPC: H01L27/146

CPC classification number: H01L27/14634 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

Abstract: An image sensor includes a pixel array having plurality of pixel cells arranged into a plurality of rows and a plurality of columns of pixel cells in a first semiconductor die. A plurality of pixel support circuits are arranged in a second semiconductor die that is stacked and coupled together with the first semiconductor die. A plurality of interconnect lines are coupled between the first and second semiconductor dies, and each one of the plurality of pixel cells is coupled to a corresponding one of the plurality of pixel support circuits through a corresponding one plurality of interconnect lines. A plurality of shield bumps are disposed proximate to corners of the pixel cells in the pixel array and between the first and second semiconductor dies such that each one of the plurality of shield bumps is disposed between adjacent interconnect lines along a diagonal of the pixel array.

公开(公告)号：US09923024B1

公开(公告)日：2018-03-20

申请号：US15607309

申请日：2017-05-26

Applicant: OmniVision Technologies, Inc.

Inventor： Keiji Mabuchi ,  Sohei Manabe ,  Duli Mao

IPC: H01L27/148 ,  H01L27/146

CPC classification number: H01L27/14812 ,  H01L27/14634

Abstract: An imaging sensor pixel comprises a highly resistive N− doped semiconductor layer with a front side and a back side. At the front side, there are at least a light sensing region, a transfer gate adjacent to the light sensing region and a P-well region. The P-well region surrounds the light sensing region and the transfer gate region, and comprises at least a floating diffusion region and a first electrode outside of the floating diffusion region, wherein a first negative voltage is applied to the first electrode. The transfer gate couples between the light sensing region and the floating diffusion region. At the back side, there is a back side P+ doped layer comprising a second electrode formed on the back side P+ doped layer, wherein a second negative voltage is applied to the second electrode. The second negative voltage is more negative than the first negative voltage.