公开(公告)号：US07397084B2

公开(公告)日：2008-07-08

申请号：US11095136

申请日：2005-04-01

申请人： Gary H. Loechelt ,  Robert B. Davies ,  David H. Lutz

发明人： Gary H. Loechelt ,  Robert B. Davies ,  David H. Lutz

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L21/2815 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/66719 ,  H01L29/66727

摘要： In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation.

摘要翻译： 在一个实施例中，半导体器件形成在半导体材料体中。 半导体器件包括在操作期间电流离开的沟道区域的一部分附近的局部化掺杂区域。

公开(公告)号：US07148553B1

公开(公告)日：2006-12-12

申请号：US09920222

申请日：2001-08-01

申请人： Robert B. Davies

发明人： Robert B. Davies

IPC分类号： H01L37/00

CPC分类号： H01L28/10 ,  H01F17/0006 ,  H01L23/5227 ,  H01L27/08 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).

公开(公告)号：US6051456A

公开(公告)日：2000-04-18

申请号：US216990

申请日：1998-12-21

申请人： Robert B. Davies ,  Andreas A. Wild

发明人： Robert B. Davies ,  Andreas A. Wild

IPC分类号： H01L21/331 ,  H01L21/336 ,  H01L21/8222 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L27/092 ,  H01L29/732 ,  H01L29/78 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L27/0623 ,  H01L21/8249

摘要： A semiconductor component includes an asymmetric transistor having two lightly doped drain regions (1300, 1701), a channel region (1702), a source region (1916) located within the channel region (1702), a drain region located outside the channel region (1702), a dielectric structure (1404) located over at least one of the two lightly doped drain regions (1300, 1701), two gate electrodes (1902, 1903) located at opposite sides of the dielectric structure (1404), a drain electrode (1901) overlying the drain region (1915), and a source electrode (1904) overlying the source region (1916). The semiconductor component also includes another transistor having an emitter electrode (122) located between a base electrode (121) and a collector electrode (123) where the base electrode (121) is formed over a dielectric structure (1405).

摘要翻译： 半导体部件包括具有两个轻掺杂漏极区域（1300,1701），沟道区域（1702），位于沟道区域（1702）内的源极区域（1916））的不对称晶体管，位于沟道区域外部的漏极区域 1702），位于两个轻掺杂漏极区（1300,1701）中的至少一个上的电介质结构（1404），位于电介质结构（1404）的相对侧的两个栅电极（1902,1903），漏电极 （1901）和覆盖源区（1916）的源电极（1904）。 该半导体元件还包括另一晶体管，其具有位于介电结构（1405）之间形成基极（121）的基极（121）和集电极（123）之间的发射极（122）。

公开(公告)号：US5879999A

公开(公告)日：1999-03-09

申请号：US720510

申请日：1996-09-30

申请人： Heemyong Park ,  Vida Ilderem ,  Robert B. Davies

发明人： Heemyong Park ,  Vida Ilderem ,  Robert B. Davies

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L29/66659 ,  H01L21/28114 ,  H01L21/2815 ,  H01L29/42376 ,  H01L29/6656 ,  H01L29/7836

摘要： An insulated gate semiconductor device (10) having a gate structure (45) that includes a conductive spacer (32) and an extension region (46) extending from the conductive spacer (32). To form the gate structure (45), a stack having sidewalls (22) is formed over a major surface (12) of a semiconductor substrate (11). A gate dielectric (23) is then formed over the major surface (12) adjacent to the sidewalls (22). The conductive spacer (32) is formed on the gate dielectric (23). The extension region (46) is then formed using selective growth or deposition and patterning of polysilicon adjacent the conductive spacer (32).

摘要翻译： 一种具有栅极结构（45）的绝缘栅极半导体器件（10），其包括导电间隔物（32）和从导电间隔物（32）延伸的延伸区域（46）。 为了形成栅极结构（45），在半导体衬底（11）的主表面（12）上形成具有侧壁（22）的叠层。 然后在与侧壁（22）相邻的主表面（12）上形成栅极电介质（23）。 导电间隔物（32）形成在栅极电介质（23）上。 然后使用与导电间隔物（32）相邻的多晶硅的选择性生长或沉积和图案化形成延伸区（46）。

公开(公告)号：US5661048A

公开(公告)日：1997-08-26

申请号：US408654

申请日：1995-03-21

申请人： Robert B. Davies ,  Chandrasekhara Sudhama ,  Frank K. Baker

发明人： Robert B. Davies ,  Chandrasekhara Sudhama ,  Frank K. Baker

IPC分类号： H01L21/336 ,  H01L21/8238 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L29/4983 ,  H01L21/823857 ,  H01L29/1083 ,  H01L29/42376 ,  H01L29/4991 ,  H01L29/66659 ,  H01L29/7835

摘要： An insulated gate field effect transistor (10) having a reduced gate to drain capacitance and a method of manufacturing the field effect transistor (10). A dopant well (13) is formed in a semiconductor substrate (11) and a drain extension region (25) is formed in the dopant well (13). An oxide layer (26) is formed on the dopant well (13) wherein the oxide layer (26) has a thickness of at least 400 angstroms. A gate structure (61) having a gate shunt portion (32) over a thinned portion of the oxide (26) and a gate extension portion (58) over an unthinned portion of the oxide (26). The thinned portion of the oxide (26) forms a gate oxide of the field effect transistor (10) and the unthinned portion lowers a capacitance of the gate shunt portion (32) of the field effect transistor (10).

摘要翻译： 具有减小的栅极 - 漏极电容的绝缘栅场效应晶体管（10）和制造场效应晶体管（10）的方法。 掺杂剂阱（13）形成在半导体衬底（11）中，并且在掺杂剂阱（13）中形成漏极延伸区域（25）。 氧化物层（26）形成在掺杂剂阱（13）上，其中氧化物层（26）具有至少400埃的厚度。 栅极结构（61）具有在氧化物（26）的薄化部分上方的栅极分流部分（32）和位于氧化物（26）的未固化部分上的栅极延伸部分（58）。 氧化物（26）的减薄部分形成场效应晶体管（10）的栅极氧化物，并且未固化部分降低场效应晶体管（10）的栅极分流部分（32）的电容。

公开(公告)号：US5451806A

公开(公告)日：1995-09-19

申请号：US205238

申请日：1994-03-03

申请人： Robert B. Davies

发明人： Robert B. Davies

IPC分类号： H01L27/02 ,  H01L27/07 ,  H01L29/78 ,  H01L23/56 ,  H01L29/66

CPC分类号： H01L29/7803 ,  H01L27/0211 ,  H01L27/07 ,  H01L2924/0002

摘要： A temperature sensing insulated gate semiconductor device (10) and method of using the insulated the insulated gate semiconductor device (10) for sensing a surface temperature. A lateral PNP bipolar transistor (63) is connected to a drain conductor (58) of an insulated gate field effect transistor (56). The insulated gate field effect transistor (56) is turned on, thereby shorting a collector conductor (64) with a base conductor (62) to form a diode connected lateral PNP bipolar transistor (63). A forward voltage is measured across an emitter-base junction of the diode connected lateral PNP bipolar transistor (63). The surface temperature of the insulated gate semiconductor device (10) is derived using the diode equation in conjunction with the current (67) and the forward voltage drop.

摘要翻译： 一种温度感测绝缘栅极半导体器件（10）以及使用绝缘的绝缘栅极半导体器件（10）来感测表面温度的方法。 横向PNP双极晶体管（63）连接到绝缘栅场效应晶体管（56）的漏极导体（58）。 绝缘栅场效应晶体管（56）导通，由此用基极导体（62）短路集电极导体（64），形成二极管连接的横向PNP双极晶体管（63）。 在二极管连接的横向PNP双极晶体管（63）的发射极 - 基极结两端测量正向电压。 绝缘栅半导体器件（10）的表面温度是使用二极管方程结合电流（67）和正向压降导出的。

公开(公告)号：US5281839A

公开(公告)日：1994-01-25

申请号：US52856

申请日：1993-04-23

申请人： Bertrand F. Cambou ,  Robert B. Davies

发明人： Bertrand F. Cambou ,  Robert B. Davies

IPC分类号： H01L21/285 ,  H01L21/338 ,  H01L29/10 ,  H01L29/812 ,  H01L29/20 ,  H01L29/22

CPC分类号： H01L29/66878 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/1029 ,  H01L29/812

摘要： A semiconductor device having a channel region having a first and a second portion. The first and second portions of the channel region are designed so that only a small portion is substantially depleted during operation. Thus, a semiconductor device having a short gate length is fabricated.

摘要翻译： 一种半导体器件，具有具有第一和第二部分的沟道区。 通道区域的第一和第二部分被设计成使得在操作期间只有一小部分被大量耗尽。 因此，制造具有短栅极长度的半导体器件。

公开(公告)号：US5032878A

公开(公告)日：1991-07-16

申请号：US459506

申请日：1990-01-02

申请人： Robert B. Davies ,  Lowell E. Clark ,  David N. Okada

发明人： Robert B. Davies ,  Lowell E. Clark ,  David N. Okada

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78

CPC分类号： H01L29/404 ,  H01L29/0619

摘要： A high voltage semiconductor structure having multiple guard rings, wherein guard rings farthest from a main junction are spaced further from each other than are guard rings closer to the main junction is provided. An enhancement region, which is of an opposite conductivity type from the guard rings, is formed between the guard rings to increase punch-through voltage between the guard rings, thereby increasing the breakdown voltage of the device. The enhancement region and close guard ring spacing result in a fine gradation of electric field and high punch-through breakdown voltage between guard rings.

公开(公告)号：US4485352A

公开(公告)日：1984-11-27

申请号：US413052

申请日：1982-08-30

申请人： Robert B. Davies ,  Robert N. Dotson ,  Michael W. Null

发明人： Robert B. Davies ,  Robert N. Dotson ,  Michael W. Null

IPC分类号： H03F3/343 ,  H03F3/04

CPC分类号： H03F3/343

摘要： A current amplifier uses a current mirror arrangement as an operational amplifier whose output has limited swing. The limited swing is achieved through a plurality of series connected diodes connected to a control input of the amplifier and to the output of the operational amplifier. The control input is coupled through a transistor to inhibit the output of the current mirror arrangement. The output node is coupled to an output for the current amplifier through a Darlington arrangement which provides high current gain.

摘要翻译： 电流放大器使用电流镜布置作为输出具有有限摆幅的运算放大器。 通过连接到放大器的控制输入和运算放大器的输出的多个串联连接的二极管实现有限的摆幅。 控制输入​​通过晶体管耦合以阻止电流镜布置的输出。 输出节点通过提供高电流增益的达林顿配置耦合到电流放大器的输出端。

公开(公告)号：US08037806B2

公开(公告)日：2011-10-18

申请号：US13105952

申请日：2011-05-12

申请人： Robert B. Davies

发明人： Robert B. Davies

IPC分类号： F41A3/78

CPC分类号： F41C23/16 ,  F41A3/94 ,  F41A5/18 ,  F41A5/28 ,  F41A29/02 ,  F41C23/04 ,  F41C23/06

摘要： A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.

摘要翻译： 具有上接收器和连接到上接收器的筒的步枪，包括螺栓托架以及操作，缓冲和冷却系统。 操作系统包括一个气缸和活塞，其连接以接收来自该桶的推进气体。 当活塞在缩回位置和延伸位置之间移动时，螺栓承载件在关闭位置和打开位置之间移动。 螺栓承载件包括可在向后和向前限制之间的引导框架内移动的重物。 该缓冲系统包括一个压缩弹簧，该压缩弹簧连接到上部接收器上，与该螺栓承载件邻接。 部分流体填充的圆筒附接到弹簧的线圈并且包括活塞和轴。 活塞被形成为使得气缸中的流体限制在一个方向上的移动并允许在第二方向上的自由运动。