公开(公告)号：US20050260347A1

公开(公告)日：2005-11-24

申请号：US10851561

申请日：2004-05-21

Applicant: Pravin Narwankar ,  Gregg Higashi

Inventor： Pravin Narwankar ,  Gregg Higashi

IPC: C23C16/30 ,  H01L21/314 ,  C23C16/00

CPC classification number: H01L21/3141 ,  C23C16/401 ,  H01L21/3143

Abstract: In one embodiment, a method for depositing a capping layer on a dielectric layer in a process chamber is provided which includes depositing the dielectric layer on a substrate surface, depositing a silicon-containing layer by an ALD process, comprising alternately pulsing a silicon precursor and an oxidizing gas into the process chamber, and exposing the silicon-containing layer to a nitridation process. In another embodiment, a method for depositing a silicon-containing capping layer on a dielectric layer in a process chamber by an ALD process is provided which includes flowing a silicon precursor into the process chamber, purging the process chamber with a purge gas, flowing an oxidizing gas comprising water formed by flowing a H2 gas and an oxygen-containing gas through a water vapor generator, and purging the process chamber with the purge gas.

Abstract translation: 在一个实施例中，提供了一种用于在处理室中的电介质层上沉积覆盖层的方法，其包括在基底表面上沉积电介质层，通过ALD工艺沉积含硅层，包括交替地脉冲硅前体和 氧化气体进入处理室，并将含硅层暴露于氮化过程。 在另一个实施例中，提供了一种通过ALD工艺在处理室中的电介质层上沉积含硅覆盖层的方法，其包括使硅前体流入处理室，用净化气体吹扫处理室， 包括通过使H 2气体和含氧气体流过水蒸气发生器而形成的水的氧化气体，以及用吹扫气体吹扫处理室。

公开(公告)号：US06548368B1

公开(公告)日：2003-04-15

申请号：US09644941

申请日：2000-08-23

Applicant: Pravin Narwankar ,  Ravi Rajagopalan

Inventor： Pravin Narwankar ,  Ravi Rajagopalan

IPC: H01L2120

CPC classification number: H01L28/40 ,  H01L21/3143 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/3185

Abstract: Provided is a method of integrating Ta2O5 into an MIS stack capacitor for a semiconductor device by forming a thin SiON layer at the Si/TaO interface using low temperature remote plasma oxidation anneal. Also provided is a method of forming an MIS stack capacitor with improved electrical performance by treating SiO2 with remote plasma nitridation or SiN layer with rapid thermal oxidation or RPO to form a SiON layer prior to Ta2O5 deposition with TAT-DMAE, TAETO or any other Ta-containing precursor.

Abstract translation: 提供了一种通过使用低温远程等离子体氧化退火在Si / TaO界面处形成薄SiON层来将Ta 2 O 5集成到用于半导体器件的MIS堆叠电容器中的方法。 还提供了一种通过用远程等离子体氮化处理SiO 2或具有快速热氧化或RPO的SiN层来形成具有改进的电性能的MIS堆叠电容器的方法，以在与TAT-DMAE，TAETO或任何其它Ta的Ta 2 O 5沉积之前形成SiON层 含有前体。

公开(公告)号：US20070049043A1

公开(公告)日：2007-03-01

申请号：US11209472

申请日：2005-08-23

Applicant: Shankar Muthukrishnan ,  Rahul Sharangpani ,  Tejal Goyani ,  Pravin Narwankar ,  Shreyas Kher ,  Yi Ma ,  Giuseppina Conti

Inventor： Shankar Muthukrishnan ,  Rahul Sharangpani ,  Tejal Goyani ,  Pravin Narwankar ,  Shreyas Kher ,  Yi Ma ,  Giuseppina Conti

IPC: H01L21/31

CPC classification number: H01L21/0234 ,  H01L21/02329 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31645 ,  H01L29/517

Abstract: A method and apparatus for forming a nitrided gate dielectric. The method comprises incorporating nitrogen into a dielectric film using a plasma nitridation process to form a nitrided gate dielectric. The first step involves providing a substrate comprising a gate dielectric film. The second step involves inducing a voltage on the substrate. Finally, the substrate is exposed to a plasma comprising a nitrogen source while maintaining the voltage to form a nitrided gate dielectric on the substrate. In one embodiment, the voltage is induced on the substrate by applying a voltage to an electrostatic chuck supporting the substrate. In another embodiment, the voltage is induced on the substrate by applying a DC bias voltage to an electrode positioned adjacent the substrate.

Abstract translation: 一种用于形成氮化栅极电介质的方法和装置。 该方法包括使用等离子体氮化工艺将氮合并到电介质膜中以形成氮化栅极电介质。 第一步涉及提供包括栅介质膜的衬底。 第二步涉及在衬底上感应电压。 最后，将衬底暴露于包含氮源的等离子体，同时保持电压以在衬底上形成氮化栅电介质。 在一个实施例中，通过向支撑衬底的静电卡盘施加电压来在衬底上感应电压。 在另一个实施例中，通过对邻近衬底定位的电极施加DC偏置电压来在衬底上感应出电压。

公开(公告)号：US06617266B2

公开(公告)日：2003-09-09

申请号：US09834698

申请日：2001-04-12

Applicant: Annabel Susan Nickles ,  Ravi Rajagopalan ,  Pravin Narwankar

Inventor： Annabel Susan Nickles ,  Ravi Rajagopalan ,  Pravin Narwankar

IPC: H01L2131

CPC classification number: C23C16/56 ,  H01L21/3105

Abstract: A process for forming high k dielectric thin films on a substrate, e.g., silicon, by 1) low temperature (500° C. or less) deposition of a dielectric material onto a surface, followed by 2) high temperature post-deposition annealing. The deposition can take place in an oxidative environment, followed by annealing, or alternatively the deposition can take place in a non-oxidative environment (e.g., N2), followed by oxidation and annealing.

Abstract translation: 1）通过1）将电介质材料沉积在表面上，然后2）高温后沉积退火，在衬底（例如硅）上形成高k电介质薄膜的方法，即1）低温（500℃或更低）。 沉积可以在氧化环境中进行，随后退火，或者沉积可以在非氧化环境（例如，N 2）中进行，随后进行氧化和退火。

公开(公告)号：US06217658B1

公开(公告)日：2001-04-17

申请号：US09328709

申请日：1999-06-09

Applicant: Maciek Orczyk ,  Laxman Murugesh ,  Pravin Narwankar

Inventor： Maciek Orczyk ,  Laxman Murugesh ,  Pravin Narwankar

IPC: C23C1600

CPC classification number: C23C16/463 ,  C03C3/06 ,  C03C2201/12 ,  C03C2203/46 ,  C23C16/401 ,  C23C16/46 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31625

Abstract: A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 &mgr;m with an aspect ratio of up to 4.5:1.

Abstract translation: 一系列工艺步骤在衬底上形成氟化硅玻璃（FSG）层。 该层在层中不太可能形成雾状或气泡，并且在后续处理步骤中比其他FSG层更不可能解吸水蒸汽。 未掺杂的硅玻璃（USG）衬垫可保护基材免受腐蚀性侵袭。 USG衬垫和FSG层沉积在相对热的晶片表面上，并且可以填充窄至0.8μm的衬底上的沟槽，纵横比高达4.5:1。

公开(公告)号：US08282992B2

公开(公告)日：2012-10-09

申请号：US11925681

申请日：2007-10-26

Applicant: Nyi Oo Myo ,  Kenric Cho ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig R. Metzner ,  Paul Deaten

Inventor： Nyi Oo Myo ,  Kenric Cho ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig R. Metzner ,  Paul Deaten

IPC: C23C16/00

CPC classification number: C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

Abstract: Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

Abstract translation: 本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的方法。 在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。 腔室还包括至少一个管道，其连接到膨胀通道内的气体入口并且定位成提供在圆形方向（例如涡流，螺旋，螺旋或其衍生物）上的气体流过膨胀通道。 膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。 腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。 衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。 在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

公开(公告)号：US20080063798A1

公开(公告)日：2008-03-13

申请号：US11847158

申请日：2007-08-29

Applicant: Shreyas Kher ,  Son Nguyen ,  Pravin Narwankar ,  Sanjeev Tandon ,  Steve Jumper ,  Vincent Sermona

Inventor： Shreyas Kher ,  Son Nguyen ,  Pravin Narwankar ,  Sanjeev Tandon ,  Steve Jumper ,  Vincent Sermona

IPC: C23C16/22

CPC classification number: C23C16/4404 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45582

Abstract: The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.

Abstract translation: 本发明通常包括用于沉积高k电介质或金属栅极材料的装置，其中可以使用有毒的，易燃的或发火的前体。 排气管可以放置在液体前体或固体前体输送柜，气体面板和水蒸气发生器区域上。 排气管道允许技术人员访问设备，而不会过度暴露于可能在液体输送柜，气体面板和水蒸汽发生器区域内收集的有毒，自燃或可燃气体。

公开(公告)号：US20060019033A1

公开(公告)日：2006-01-26

申请号：US11167070

申请日：2005-06-24

Applicant: Shankar Muthukrishnan ,  Rahul Sharangpani ,  Tejal Goyani ,  Pravin Narwankar ,  Shreyas Kher ,  Khaled Ahmed ,  Yi Ma

Inventor： Shankar Muthukrishnan ,  Rahul Sharangpani ,  Tejal Goyani ,  Pravin Narwankar ,  Shreyas Kher ,  Khaled Ahmed ,  Yi Ma

IPC: C23C16/00

CPC classification number: H01L21/0228 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4488 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31637 ,  H01L21/31645

Abstract: In one embodiment, a method for forming a dielectric material is provided which includes exposing a substrate sequentially to a metal-containing precursor and an oxidizing gas to form metal oxide (e.g., HfOx) during an ALD process and subsequently exposing the substrate to an inert plasma process and a thermal annealing process. Generally, the metal oxide contains hafnium, tantalum, titanium, aluminum, zirconium, lanthanum or combinations thereof. In one example, the inert plasma process contains argon and is free of nitrogen, while the thermal annealing process contains oxygen. In another example, an ALD process to form a metal oxide includes exposing the substrate sequentially to a metal precursor and an oxidizing gas containing water vapor formed by a catalytic water vapor generator. In an alternative embodiment, a method for forming a dielectric material is provide which includes exposing a substrate to a deposition process to form a metal oxide layer and subsequently exposing the substrate to a nitridation plasma process and a thermal annealing process to form metal oxynitride (e.g., HfOxNy).

Abstract translation: 在一个实施例中，提供了一种用于形成介电材料的方法，其包括在ALD过程期间将衬底依次暴露于含金属的前体和氧化气体以形成金属氧化物（例如，HfO x x x） 随后将衬底暴露于惰性等离子体工艺和热退火工艺中。 通常，金属氧化物含有铪，钽，钛，铝，锆，镧或其组合。 在一个实例中，惰性等离子体工艺包含氩并且不含氮，而热退火工艺含有氧。 在另一个实例中，形成金属氧化物的ALD工艺包括将基板顺序地暴露于金属前体和含有由催化水蒸汽发生器形成的水蒸汽的氧化气体。 在替代实施例中，提供了形成电介质材料的方法，其包括将衬底暴露于沉积工艺以形成金属氧化物层，并随后将衬底暴露于氮化等离子体工艺和热退火工艺以形成金属氮氧化物（例如 ，HfO x N N y）。

公开(公告)号：US20050271813A1

公开(公告)日：2005-12-08

申请号：US11127767

申请日：2005-05-12

Applicant: Shreyas Kher ,  Pravin Narwankar ,  Rahul Sharangapani

Inventor： Shreyas Kher ,  Pravin Narwankar ,  Rahul Sharangapani

IPC: C23C16/00 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/56 ,  F22B1/00

CPC classification number: C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

Abstract: Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method includes sequentially exposing a substrate to a hafnium precursor and an oxidizing gas to deposit a hafnium oxide material thereon. In another example, a hafnium silicate material is deposited by sequentially exposing a substrate to the oxidizing gas and a process gas containing a hafnium precursor and a silicon precursor. The oxidizing gas usually contains water vapor formed by flowing a hydrogen source gas and an oxygen source gas through a water vapor generator. In another example, a method includes sequentially exposing a substrate to the oxidizing gas and at least one precursor to deposit hafnium oxide, zirconium oxide, lanthanum oxide, tantalum oxide, titanium oxide, aluminum oxide, silicon oxide, aluminates thereof, silicates thereof, derivatives thereof or combinations thereof.

Abstract translation: 本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积电介质材料的方法。 在一个实例中，一种方法包括将衬底顺序地暴露于铪前体和氧化气体以在其上沉积氧化铪材料。 在另一个实例中，通过将衬底顺序地暴露于氧化气体和含有铪前体和硅前体的工艺气体来沉积硅酸铪材料。 氧化气体通常含有通过使氢源气体和氧源气体流过水蒸汽发生器而形成的水蒸气。 在另一个实例中，一种方法包括将衬底顺序地暴露于氧化气体和至少一种前体以沉积氧化铪，氧化锆，氧化镧，氧化钽，氧化钛，氧化铝，氧化硅，其铝酸盐，其硅酸盐，衍生物 或其组合。

公开(公告)号：US20080041307A1

公开(公告)日：2008-02-21

申请号：US11925684

申请日：2007-10-26

Applicant: Son Nguyen ,  Kedarnath Sangam ,  Miriam Schwartz ,  Kenric Choi ,  Sanjay Bhat ,  Pravin Narwankar ,  Shreyas Kher ,  Rahul Sharangapani ,  Shankar Muthukrishnam ,  Paul Deaton

Inventor： Son Nguyen ,  Kedarnath Sangam ,  Miriam Schwartz ,  Kenric Choi ,  Sanjay Bhat ,  Pravin Narwankar ,  Shreyas Kher ,  Rahul Sharangapani ,  Shankar Muthukrishnam ,  Paul Deaton

IPC: C23C16/00 ,  F15C1/16

CPC classification number: C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

Abstract: The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

Abstract translation: 本发明的实施例描述了一种处理室，例如ALD室，其具有逐渐增加的直径的气体输送导管，以减少气体输送期间的焦耳汤普森效应，与衬底支撑件平齐的环形气体衬套以维持气体温度 并且减少到基板支撑体背面的气流，以及气体储存器，以允许控制输送处理气体。 直径逐渐增大的气体管道，环形气体衬套和气体储存器有助于保持气体温度稳定并减少颗粒的产生。