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    Formation of a silicon oxynitride layer on a high-k dielectric material
    1.
    发明申请
    Formation of a silicon oxynitride layer on a high-k dielectric material 失效
    在高k电介质材料上形成氮氧化硅层

    公开(公告)号：US20050260347A1

    公开(公告)日：2005-11-24

    申请号：US10851561

    申请日：2004-05-21

    Applicant: Pravin Narwankar ,  Gregg Higashi

    Inventor： Pravin Narwankar ,  Gregg Higashi

    IPC: C23C16/30 ,  H01L21/314 ,  C23C16/00

    CPC classification number: H01L21/3141 ,  C23C16/401 ,  H01L21/3143

    Abstract: In one embodiment, a method for depositing a capping layer on a dielectric layer in a process chamber is provided which includes depositing the dielectric layer on a substrate surface, depositing a silicon-containing layer by an ALD process, comprising alternately pulsing a silicon precursor and an oxidizing gas into the process chamber, and exposing the silicon-containing layer to a nitridation process. In another embodiment, a method for depositing a silicon-containing capping layer on a dielectric layer in a process chamber by an ALD process is provided which includes flowing a silicon precursor into the process chamber, purging the process chamber with a purge gas, flowing an oxidizing gas comprising water formed by flowing a H2 gas and an oxygen-containing gas through a water vapor generator, and purging the process chamber with the purge gas.

    Abstract translation: 在一个实施例中，提供了一种用于在处理室中的电介质层上沉积覆盖层的方法，其包括在基底表面上沉积电介质层，通过ALD工艺沉积含硅层，包括交替地脉冲硅前体和 氧化气体进入处理室，并将含硅层暴露于氮化过程。 在另一个实施例中，提供了一种通过ALD工艺在处理室中的电介质层上沉积含硅覆盖层的方法，其包括使硅前体流入处理室，用净化气体吹扫处理室， 包括通过使H 2气体和含氧气体流过水蒸气发生器而形成的水的氧化气体，以及用吹扫气体吹扫处理室。

    Photovoltaic device
    2.
    发明授权
    Photovoltaic device 有权
    光伏装置

    公开(公告)号：US08937244B2

    公开(公告)日：2015-01-20

    申请号：US12605108

    申请日：2009-10-23

    Applicant: Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    Inventor： Isik C. Kizilyalli ,  Melissa Archer ,  Harry Atwater ,  Thomas J. Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi

    IPC: H01L31/00 ,  H01L31/0304 ,  H01L31/0236 ,  H01L31/0735

    CPC classification number: H01L31/0304 ,  H01L31/022441 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/03046 ,  H01L31/065 ,  H01L31/0682 ,  H01L31/0693 ,  H01L31/0735 ,  Y02E10/50 ,  Y02E10/52 ,  Y02E10/544

    Abstract: Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.

    Abstract translation: 提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。 根据本发明的实施例的光伏（PV）单元可以具有通过外延剥离（ELO）制造的非常薄的吸收层，所有电触点位于PV装置的背面以避免阴影，和/或 使用扩散器和反射器的前侧和后侧光捕获以增加入射到PV单元的前侧的光子的吸收。 可以将多个PV单元组合成PV组，并且可以将PV组阵列连接以形成具有在低温下施加的薄金属或导电聚合物的PV模块。 与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

    Methods and apparatus for a chemical vapor deposition reactor
    4.
    发明授权
    Methods and apparatus for a chemical vapor deposition reactor 有权
    化学气相沉积反应器的方法和装置

    公开(公告)号：US08602707B2

    公开(公告)日：2013-12-10

    申请号：US12475169

    申请日：2009-05-29

    Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

    Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus ,  Melissa Archer ,  Harry Atwater ,  Stewart Sonnenfeldt

    IPC: H01L21/677

    CPC classification number: C30B25/08 ,  B65G2207/06 ,  C23C16/45519 ,  C23C16/4583 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B25/18 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67109 ,  H01L21/67784

    Abstract: Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes at least open indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. Each indentation pocket may be rectangular and have four side walls extending substantially perpendicular to the lower surface. In another embodiment, a method for levitating substrates disposed on a substrate carrier is provided which includes exposing the lower surface of a substrate carrier to a gas stream, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.

    Abstract translation: 本发明的实施方案一般涉及悬浮底物载体或载体。 在一个实施例中，提供了用于支撑和承载至少一个衬底或晶片的衬底载体，其包括包含上表面和下表面的衬底载体主体，以及设置在下表面内的至少一个压痕穴。 在另一个实施例中，衬底载体在上表面内至少包括开放的凹陷区域，以及设置在下表面内的至少两个压痕穴。 每个压痕袋可以是矩形的并且具有基本上垂直于下表面延伸的四个侧壁。 在另一个实施例中，提供一种用于浮置设置在基板载体上的基板的方法，其包括使基板载体的下表面暴露于气流，在基板载体下形成气垫，使基板载体悬浮在处理室内，以及 沿着处理室内的路径移动衬底载体。

    EPITAXIAL LIFT OFF STACK HAVING A UNIVERSALLY SHRUNK HANDLE AND METHODS THEREOF
    5.
    发明申请
    EPITAXIAL LIFT OFF STACK HAVING A UNIVERSALLY SHRUNK HANDLE AND METHODS THEREOF 有权
    具有全能的SHRUNK手柄的外墙起吊架及其方法

    公开(公告)号：US20090321885A1

    公开(公告)日：2009-12-31

    申请号：US12475411

    申请日：2009-05-29

    Applicant: Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

    Inventor： Melissa Archer ,  Harry Atwater ,  Thomas Gmitter ,  Gang He ,  Andreas Hegedus ,  Gregg Higashi ,  Stewart Sonnenfeldt

    IPC: H01L29/06 ,  H01L21/20

    CPC classification number: H01L21/7813 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/30612 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/7806 ,  H01L2221/6835 ,  H01L2221/68381

    Abstract: Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a universally shrinkable support handle onto the epitaxial material, wherein the universally shrinkable support handle contains a shrinkable material, and shrinking the support handle to form tension in the support handle and compression in the epitaxial material during a shrinking process. The method further includes removing the sacrificial layer during an etching process, peeling the epitaxial material from the substrate while forming an etch crevice therebetween, and bending the support handle to have substantial curvature.

    Abstract translation: 本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。 在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将普遍可收缩的支撑手柄附着在外延材料上，其中普遍可收缩的支撑手柄包含可收缩材料， 并且收缩支撑手柄以在收缩过程中在支撑手柄中形成张力并在外延材料中压缩。 该方法还包括在蚀刻工艺期间去除牺牲层，在衬底之间形成蚀刻缝隙并将支撑柄弯曲成具有实质曲率的同时从衬底剥离外延材料。

    Methods for heating with lamps
    8.
    发明授权
    Methods for heating with lamps 有权
    用灯加热的方法

    公开(公告)号：US08859042B2

    公开(公告)日：2014-10-14

    申请号：US12725318

    申请日：2010-03-16

    Applicant: Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

    Inventor： Gang He ,  Gregg Higashi ,  Khurshed Sorabji ,  Roger Hamamjy ,  Andreas Hegedus

    IPC: C23C16/00 ,  H01L21/677 ,  H01L21/67 ,  C30B29/42 ,  C30B25/10 ,  C23C16/48 ,  C30B29/40 ,  C23C16/455 ,  C23C16/44 ,  C23C16/54 ,  C30B25/02 ,  C23C16/458

    CPC classification number: C23C16/4583 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45565 ,  C23C16/481 ,  C23C16/54 ,  C30B25/025 ,  C30B25/10 ,  C30B29/40 ,  C30B29/42 ,  H01L21/67115 ,  H01L21/67784

    Abstract: Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for heating a substrate or a substrate susceptor within a vapor deposition reactor system includes exposing a lower surface of a substrate susceptor, such as a wafer carrier, to energy emitted from a heating lamp assembly, and heating the substrate susceptor to a predetermined temperature. The heating lamp assembly generally contains a lamp housing disposed on an upper surface of a support base and contains at least one lamp holder, a plurality of lamps extending from the lamp holder, and a reflector disposed on the upper surface of the support base, next to the lamp holder, and below the lamps. The plurality of lamps may have split filament lamps and/or non-split filament lamps for heating inner and outer portions of the substrate susceptor.

    Abstract translation: 本发明的实施方案一般涉及用于化学气相沉积（CVD）方法的方法。 在一个实施例中，一种用于加热气相沉积反应器系统内的衬底或衬底基座的方法包括将诸如晶片载体的衬底基座的下表面暴露于从加热灯组件发射的能量，以及加热衬底基座 达到预定温度。 加热灯组件通常包括设置在支撑基座的上表面上的灯壳，并且包含至少一个灯座，从灯座延伸的多个灯和设置在支撑座的上表面上的反射器 到灯座和灯下方。 多个灯可以具有用于加热衬底基座的内部和外部的分离的灯丝灯和/或非分裂灯丝灯。

    THERMAL BRIDGE FOR CHEMICAL VAPOR DEPOSITION REACTORS
    10.
    发明申请
    THERMAL BRIDGE FOR CHEMICAL VAPOR DEPOSITION REACTORS 有权
    化学气相沉积反应器的热桥

    公开(公告)号：US20130047922A1

    公开(公告)日：2013-02-28

    申请号：US13222984

    申请日：2011-08-31

    Applicant: Gregg Higashi ,  Khurshed Sorabji ,  Andreas Hegedus

    Inventor： Gregg Higashi ,  Khurshed Sorabji ,  Andreas Hegedus

    IPC: C23C16/46 ,  F27D11/12 ,  C23C16/458

    CPC classification number: C23C16/458 ,  C23C16/483 ,  C23C16/54 ,  F27B17/0025 ,  F27D11/06 ,  F27D11/12 ,  H01L21/67115 ,  H01L21/67173 ,  H01L21/67706 ,  H01L21/6776

    Abstract: A thermal bridge connecting first and second processing zones and a method for transferring a work piece from a first to a second processing zone by way of the thermal bridge are disclosed. A work piece, transportable from the first to the second processing zone on or above the thermal bridge, is maintained at a temperature between the temperatures of the processing zones. The thermal bridge member features a thermally conductive transport member for the work piece supported over an infrared transmissive member that is insulative to heat conduction and convection. The bridge insulative member extends between the first and second processing zones or between reactors. An infrared radiation beam source emits infrared radiation which passes through the bridge insulative member to the transport member, heating the member. In an alternate embodiment, the transport member may be heated directly. A liner member may be mounted above the bridge member to retain heat.

    Abstract translation: 公开了一种连接第一和第二处理区域的热桥和通过热桥将工件从第一处理区传送到第二处理区的方法。 从热桥上或上方的第一处理区域运送到第二处理区域的工件保持在处理区域的温度之间的温度。 热桥构件具有用于工件的导热传输构件，其被支撑在绝热的热传导和对流的红外透射构件上。 桥绝缘构件在第一和第二处理区之间或反应器之间延伸。 红外辐射束源发射红外辐射，其通过桥绝缘构件传送到传送构件，加热构件。 在替代实施例中，输送构件可以被直接加热。 衬套构件可以安装在桥构件上方以保持热量。

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