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    Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensions
    14.
    发明授权
    Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensions 失效
    制造具有精确定义的单晶源极/漏极延伸的SOI器件的方法

    公开(公告)号：US06743689B1

    公开(公告)日：2004-06-01

    申请号：US10341427

    申请日：2003-01-14

    Applicant: Eric N. Paton ,  Robert B. Ogle ,  Cyrus E. Tabery ,  Qi Xiang ,  Bin Yu

    Inventor： Eric N. Paton ,  Robert B. Ogle ,  Cyrus E. Tabery ,  Qi Xiang ,  Bin Yu

    IPC: H01L21336

    CPC classification number: H01L21/26513 ,  H01L21/26506 ,  H01L21/2658 ,  H01L21/268 ,  H01L29/458 ,  H01L29/66492 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/66553 ,  H01L29/66772 ,  H01L29/78612 ,  H01L29/78621

    Abstract: Semiconductor devices comprising fully and partially depleted SOI transistors with accurately defined monocrystalline or substantially completely monocrystalline silicon source/drain extensions are fabricated by selectively pre-amorphizing intended source/drain extensions, ion implanting dopants into the pre-amorphized regions and laser thermal annealing to effect crystallization and activation of the source/drain extensions. Embodiments include forming a gate electrode over an SOI substrate with a gate dielectric layer therebetween, forming silicon nitride sidewall spacers on the side surfaces of the gate electrode, forming source/drain regions, forming a thermal oxide layer on the gate electrode and on the source/drain regions, removing the silicon nitride sidewall spacers, pre-amorphizing the intended source/drain extension regions, ion implanting impurities into the pre-amorphized regions and laser thermal annealing to crystallize the pre-amorphized regions and to activate the source/drain extensions.

    Abstract translation: 包括具有精确定义的单晶或基本上完全单晶硅源极/漏极延伸的完全和部分耗尽的SOI晶体管的半导体器件通过将预期的源/漏延伸，离子注入掺杂剂预先非晶化以进行预非晶化区域和激光热退火来制造 源/漏扩展的结晶和激活。 实施例包括在SOI衬底之上形成栅极电介质层，在栅电极之间形成氮化硅侧壁间隔物，形成源/漏区，在栅电极和源极上形成热氧化层 漏极区域，去除氮化硅侧壁间隔物，使预期的源极/漏极延伸区域预非晶化，离子注入杂质到预非晶化区域和激光热退火以使预非晶化区域结晶并激活源极/漏极延伸部分 。

    Scanning laser thermal annealing
    16.
    发明授权
    Scanning laser thermal annealing 有权
    扫描激光热退火

    公开(公告)号：US07351638B1

    公开(公告)日：2008-04-01

    申请号：US10021782

    申请日：2001-12-18

    Applicant: Cyrus E. Tabery ,  Eric N. Paton ,  Bin Yu ,  Qi Xiang ,  Robert B. Ogle

    Inventor： Cyrus E. Tabery ,  Eric N. Paton ,  Bin Yu ,  Qi Xiang ,  Robert B. Ogle

    IPC: H01L21/336

    CPC classification number: H01L21/268 ,  H01L21/26513 ,  H01L29/6659

    Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode over a substrate, implanting dopants into the substrate and activating the dopants using laser thermal annealing. During annealing, the laser and substrate are moved relative to one another, and the movement of the laser and the substrate relative to one another does not pause between and during activating one portion of the source/drain regions and activating another portion of the source/drain regions. Each pulse from the laser can respectively irradiate different portions of the source/drain regions, and a spot area of the laser is less than 50 millimeter2.

    Abstract translation: 一种制造半导体器件的方法包括在衬底上形成栅电极，将掺杂剂注入到衬底中并使用激光热退火激活掺杂剂。 在退火期间，激光器和衬底相对于彼此移动，并且激光器和衬底相对于彼此的运动在激活源极/漏极区域的一部分之间和在激活源极/漏极区域的另一部分之间不间断， 漏区。 来自激光器的每个脉冲可以分别照射源极/漏极区域的不同部分，并且激光器的斑点面积小于50毫米2。

    Method of forming miniaturized polycrystalline silicon gate electrodes using selective oxidation
    17.
    发明授权
    Method of forming miniaturized polycrystalline silicon gate electrodes using selective oxidation 失效
    使用选择性氧化形成小型化多晶硅栅电极的方法

    公开(公告)号：US06979635B1

    公开(公告)日：2005-12-27

    申请号：US10759171

    申请日：2004-01-20

    Applicant: Akif Sultan ,  Qi Xiang ,  Bin Yu

    Inventor： Akif Sultan ,  Qi Xiang ,  Bin Yu

    IPC: H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L29/78

    CPC classification number: H01L29/6653 ,  H01L21/28035 ,  H01L21/28123 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  Y10S438/976

    Abstract: Ultra narrow and thin polycrystalline silicon gate electrodes are formed by patterning a polysilicon gate precursor, reducing its width and height by selectively oxidizing its upper and side surfaces, and then removing the oxidized surfaces. Embodiments include patterning the polysilicon gate precursor with an oxide layer thereunder, ion implanting to form deep source/drain regions, forming a nitride layer on the substrate surface on each side of the polysilicon gate precursor, thermally oxidizing the upper and side surfaces of the polysilicon gate precursor thereby consuming silicon, and then removing the oxidized upper and side surfaces leaving a polysilicon gate electrode with a reduced width and a reduced height. Subsequent processing includes forming shallow source/drain extensions, forming dielectric sidewall spacers on the polysilicon gate electrode and then forming metal silicide layers on the upper surface of the polysilicon gate electrode and over the source/drain regions.

    Abstract translation: 通过图案化多晶硅栅极前体，通过选择性地氧化其上表面和侧表面，然后去除氧化表面而减小其宽度和高度来形成超窄和多晶硅栅电极。 实施例包括用其下面的氧化物层图案化多晶硅栅极前体，离子注入以形成深源极/漏极区域，在多晶硅栅极前体的每一侧的衬底表面上形成氮化物层，热氧化多晶硅的上表面和侧表面 从而消耗硅，然后去除氧化的上表面和侧表面，留下具有减小的宽度和降低的高度的多晶硅栅电极。 随后的处理包括形成浅源极/漏极延伸部分，在多晶硅栅电极上形成电介质侧壁间隔物，然后在多晶硅栅极电极的上表面上以及在源极/漏极区域上形成金属硅化物层。

    Semiconductor device formed with disposable spacer and liner using high-K material and method of fabrication
    19.
    发明授权
    Semiconductor device formed with disposable spacer and liner using high-K material and method of fabrication 有权
    使用高K材料和制造方法形成具有一次性间隔件和衬垫的半导体器件

    公开(公告)号：US06680233B2

    公开(公告)日：2004-01-20

    申请号：US09974167

    申请日：2001-10-09

    Applicant: Bin Yu ,  Qi Xiang ,  HaiHong Wang

    Inventor： Bin Yu ,  Qi Xiang ,  HaiHong Wang

    IPC: H01L21336

    CPC classification number: H01L29/4983 ,  H01L29/6653 ,  H01L29/6659

    Abstract: A semiconductor device and method of manufacture. A liner composed of a high-K material having a relative permittivity of greater than 10 is formed adjacent at least the sidewalls of a gate. Sidewall spacers are formed adjacent the gate and spaced apart from the gate by the liner. The liner can be removed using an etch process that has substantially no reaction with a gate dielectric of the gate.

    Abstract translation: 半导体器件及其制造方法。 由栅极的至少侧壁形成由相对介电常数大于10的高K材料构成的衬垫。 侧壁间隔件形成在门附近并且通过衬套与门隔开。 可以使用与栅极的栅极电介质基本上没有反应的蚀刻工艺来去除衬里。

    In-situ monitoring during laser thermal annealing
    20.
    发明授权
    In-situ monitoring during laser thermal annealing 有权
    激光热退火期间的原位监测

    公开(公告)号：US06656749B1

    公开(公告)日：2003-12-02

    申请号：US10013354

    申请日：2001-12-13

    Applicant: Eric N. Paton ,  Robert B. Ogle ,  Bin Yu ,  Cyrus E. Tabery ,  Qi Xiang

    Inventor： Eric N. Paton ,  Robert B. Ogle ,  Bin Yu ,  Cyrus E. Tabery ,  Qi Xiang

    IPC: H01L2100

    CPC classification number: H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L22/12 ,  H01L22/20 ,  H01L29/6659

    Abstract: A method of manufacturing a semiconductor device includes thermal annealing source/drain regions with a laser, measuring a depth of the source/drain regions, and adjusting a parameter of the laser used in the thermal annealing process. After the laser is adjusted, the source/drain regions are laser thermal annealed again until a desired depth of the source/drain regions is obtained. An apparatus for processing a semiconductor device includes a chamber, a laser, a measuring device, and a controller. The semiconductor device is positioned within the chamber for processing. The laser is used to laser thermal anneal the semiconductor device within the chamber. The measuring device measures a depth of source/drain regions in the semiconductor device when the semiconductor device is within the chamber, and the controller receives measurement information from the measuring device and adjusts parameters of the laser.

    Abstract translation: 制造半导体器件的方法包括：用激光热退火源极/漏极区域，测量源极/漏极区域的深度，以及调整在热退火过程中使用的激光器的参数。 在调整激光器之后，源极/漏极区域被再次激光热退火，直到得到所需的源极/漏极区域的深度。 一种用于处理半导体器件的装置，包括腔室，激光器，测量装置和控制器。 半导体器件位于腔室内用于处理。 激光器用于对腔室内的半导体器件进行激光热退火。 当半导体器件在腔室内时，测量装置测量半导体器件中的源极/漏极区域的深度，并且控制器从测量装置接收测量信息并调整激光器的参数。

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