公开(公告)号：US20160013163A1

公开(公告)日：2016-01-14

申请号：US14862127

申请日：2015-09-22

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Takafumi Furukawa

IPC: H01L25/07 ,  H01L23/31 ,  H01L23/495 ,  H01L29/739 ,  H01L29/861

CPC classification number: H01L25/072 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/115 ,  H01L25/162 ,  H01L25/165 ,  H01L25/18 ,  H01L27/0629 ,  H01L27/0635 ,  H01L29/0619 ,  H01L29/0684 ,  H01L29/739 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/861 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H03K17/0828 ,  H03K2017/0806 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/00013 ,  H01L2924/0665

Abstract: An improvement is achieved in the performance of an electronic device. A first semiconductor device and a second semiconductor device are mounted over the upper surface of a wiring board such that, e.g., in plan view, the orientation of the second semiconductor device intersects the orientation of the first semiconductor device. That is, the first semiconductor device is mounted over the upper surface of the wiring board such that a first emitter terminal and a first signal terminal are arranged along an x-direction in which the pair of shorter sides of the wiring board extend. On the other hand, the second semiconductor device is mounted over the upper surface of the wiring board such that a second emitter terminal and a second signal terminal are arranged along a y-direction in which the pair of longer sides of the wiring board extend.

公开(公告)号：US09153563B2

公开(公告)日：2015-10-06

申请号：US14472814

申请日：2014-08-29

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Takafumi Furukawa

IPC: H01L25/16 ,  H01L27/06 ,  H01L29/739 ,  H01L29/861 ,  H01L23/495 ,  H01L25/11 ,  H01L25/18 ,  H02M7/00 ,  H01L23/00

CPC classification number: H01L25/072 ,  H01L23/3114 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/34 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/115 ,  H01L25/162 ,  H01L25/165 ,  H01L25/18 ,  H01L27/0635 ,  H01L29/739 ,  H01L29/7393 ,  H01L29/861 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/0603 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2224/92246 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H02M7/003 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/00013 ,  H01L2924/0665

Abstract: An improvement is achieved in the performance of an electronic device. A first semiconductor device and a second semiconductor device are mounted over the upper surface of a wiring board such that, e.g., in plan view, the orientation of the second semiconductor device intersects the orientation of the first semiconductor device. That is, the first semiconductor device is mounted over the upper surface of the wiring board such that a first emitter terminal and a first signal terminal are arranged along an x-direction in which the pair of shorter sides of the wiring board extend. On the other hand, the second semiconductor device is mounted over the upper surface of the wiring board such that a second emitter terminal and a second signal terminal are arranged along a y-direction in which the pair of longer sides of the wiring board extend.

Abstract translation: 在电子设备的性能方面取得了进步。 第一半导体器件和第二半导体器件安装在布线板的上表面上，使得例如在平面图中，第二半导体器件的取向与第一半导体器件的取向相交。 也就是说，第一半导体器件安装在布线板的上表面上，使得第一发射极端子和第一信号端子沿着布线板的该对短边延伸的x方向排列。 另一方面，第二半导体器件安装在布线板的上表面上，使得第二发射极端子和第二信号端子沿着布线板的该对长边延伸的y方向排列。

公开(公告)号：US20140367739A1

公开(公告)日：2014-12-18

申请号：US14287085

申请日：2014-05-26

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Nobuya Koike ,  Masaki Kotsuji ,  Yukihiro Narita

IPC: H01L29/739 ,  H01L23/538

CPC classification number: H01L29/7393 ,  H01L21/4842 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/538 ,  H01L23/552 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.

Abstract translation: 通过支持大电流来提高半导体器件和电子器件的性能。 发射极端子从密封体的第一侧突出，信号端子从密封体的第二侧突出。 也就是说，发射极端子突出的密封体的侧面和信号端子突出的密封体的侧面是不同的。 更具体地，信号端子从密封体的与发射极端子突出的侧面相反的一侧突出。 此外，包括形成在其中的二极管的第二半导体芯片安装在芯片安装部分的第一表面上，以便位于发射极端子和包括在其平面图中形成的IGBT的第一半导体芯片之间。

公开(公告)号：US10546839B2

公开(公告)日：2020-01-28

申请号：US16146097

申请日：2018-09-28

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Norio Kido

IPC: H01L25/07 ,  H01L23/28 ,  H01L25/18 ,  H01L23/00 ,  H02P25/092 ,  H01L23/31 ,  H01L23/498 ,  H02P27/06

Abstract: An electronic apparatus includes a wiring board including a main surface on which a first wiring and a second wiring are formed, a first semiconductor device mounted on the main surface of the wiring board, and a second semiconductor device mounted on the main surface of the wiring board. Each of the first semiconductor device and the second semiconductor device includes a first semiconductor chip including an insulated gate bipolar transistor, a second semiconductor chip including a diode, a first lead electrically connected to an emitter electrode pad formed on a first front surface of the first semiconductor chip, a second lead electrically connected to an anode electrode pad formed on a second front surface of the second semiconductor chip, and a first terminal electrically connected to a collector electrode formed on a first back surface of the first semiconductor chip.

公开(公告)号：US20190088629A1

公开(公告)日：2019-03-21

申请号：US16146097

申请日：2018-09-28

Applicant: Renesas electronics Corporation

Inventor： Akira Muto ,  Norio Kido

IPC: H01L25/07 ,  H01L23/498 ,  H01L25/18 ,  H01L23/00 ,  H02P25/092 ,  H01L23/28 ,  H01L23/31 ,  H02P27/06

Abstract: An electronic apparatus includes a wiring board including a main surface on which a first wiring and a second wiring are formed, a first semiconductor device mounted on the main surface of the wiring board, and a second semiconductor device mounted on the main surface of the wiring board. Each of the first semiconductor device and the second semiconductor device includes a first semiconductor chip including an insulated gate bipolar transistor, a second semiconductor chip including a diode, a first lead electrically connected to an emitter electrode pad formed on a first front surface of the first semiconductor chip, a second lead electrically connected to an anode electrode pad formed on a second front surface of the second semiconductor chip, and a first terminal electrically connected to a collector electrode formed on a first back surface of the first semiconductor chip.

公开(公告)号：US09704979B2

公开(公告)日：2017-07-11

申请号：US14287085

申请日：2014-05-26

Applicant: Renesas Electronics Corporation

Inventor： Akira Muto ,  Nobuya Koike ,  Masaki Kotsuji ,  Yukihiro Narita

IPC: H01L29/739 ,  H01L23/538 ,  H01L23/495 ,  H01L23/00 ,  H01L29/78 ,  H01L21/48 ,  H01L23/552

CPC classification number: H01L29/7393 ,  H01L21/4842 ,  H01L23/49537 ,  H01L23/49541 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/538 ,  H01L23/552 ,  H01L24/36 ,  H01L24/37 ,  H01L24/40 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/7805 ,  H01L29/7813 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/371 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.