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    MULTIPLE-PATTERN FORMING METHODS
    11.
    发明申请
    MULTIPLE-PATTERN FORMING METHODS 有权
    多模式形成方法

    公开(公告)号：US20160062232A1

    公开(公告)日：2016-03-03

    申请号：US14836050

    申请日：2015-08-26

    Applicant: Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    Inventor： Chang-Young Hong ,  Cheng-Bai Xu ,  Jung Woo Kim ,  Cong Liu ,  Shintaro Yamada ,  Lori Anne Joesten ,  Choong-Bong Lee ,  Phillip D. Hustad ,  James C. Taylor

    IPC: G03F7/00 ,  G03F7/40 ,  G03F7/32 ,  H01L21/027 ,  G03F7/20

    CPC classification number: G03F7/40 ,  G03F7/0397 ,  G03F7/2041 ,  G03F7/322 ,  G03F7/325 ,  G03F7/405 ,  H01L21/0273 ,  H01L21/0337

    Abstract: Multiple-pattern forming methods are provided. The methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) patternwise exposing the photoresist layer to activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the first developer; and (g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern, leaving the solubility-switched sidewall region to form a multiple-pattern. The methods have particular applicability to the semiconductor manufacturing industry for the formation of fine lithographic patterns.

    Abstract translation: 提供了多模式形成方法。 所述方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一层或多层上形成光致抗蚀剂层，其中光致抗蚀剂层由包含酸性不稳定基团的基质聚合物组成的组合物形成; 光致酸发生器; 和溶剂; （c）将光致抗蚀剂层图案化地曝光成激活辐射; （d）烘烤曝光的光致抗蚀剂层; （e）使烘烤的光致抗蚀剂层与第一显影剂接触以形成第一抗蚀剂图案; （f）用涂料组合物处理所述第一抗蚀剂图案，所述涂料组合物包括相对于不同于所述第一显影剂的第二显影剂将所述第一抗蚀剂图案的侧壁区域的可溶解度从可溶性切换到不溶性的方法; 和（g）使经处理的第一抗蚀剂图案与第二显影剂接触以除去第一抗蚀剂图案的部分，留下溶解度转换侧壁区域以形成多重图案。 该方法对于形成精细光刻图案的半导体制造业具有特别的适用性。

    Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
    14.
    发明授权
    Photoacid generator, photoresist, coated substrate, and method of forming an electronic device 有权
    光酸发生剂，光致抗蚀剂，被覆基材和形成电子器件的方法

    公开(公告)号：US09067909B2

    公开(公告)日：2015-06-30

    申请号：US14012577

    申请日：2013-08-28

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Irvinder Kaur ,  Emad Aqad ,  Cong Liu ,  Cheng Bai Xu

    IPC: G03F7/004 ,  G03F7/20 ,  C07D319/04 ,  C07D317/72

    CPC classification number: C07D317/72 ,  C07D319/04 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/2002

    Abstract: A photoacid generator compound has formula (1) wherein n is zero or 1; and R1-R6 are each independently hydrogen, halogen, or unsubstituted or substituted C1-20 linear or branched alkyl, C1-20 cycloalkyl, C6-20 aryl, C3-20 heteroaryl, or an acid-generating group having the structure *L-Z−M+] wherein L is an unsubstituted or substituted C1-50 divalent group; Z− is a monovalent anionic group; and M+ is an iodonium or sulfonium cation. Geminal R groups can combine to form a ring with the carbon to which they are attached, as long as no more than two such rings are formed. At least one of R1-R6 includes the acid-generating group or two germinal R groups combine to form the acid-generating group. Also described are a photoresist composition incorporating the photoacid generator compound, a coated substrate including a layer of the photoresist composition, and a method of forming an electronic device using a layer of the photoresist composition.

    Abstract translation: 光酸产生剂化合物具有式（1），其中n为0或1; 和R 1 -R 6各自独立地为氢，卤素或未取代或取代的C 1-20直链或支链烷基，C 1-20环烷基，C 6-20芳基，C 3-20杂芳基或具有结构* LZ- M +]其中L是未取代或取代的C 1-50二价基团; Z-是一价阴离子基团; 而M +是碘鎓或锍阳离子。 只要不超过两个这样的环形成，Geminal R基团可以结合形成与它们所连接的碳的环。 R1-R6中的至少一个包括产酸基团或两个生发R基团结合形成产酸基团。 还描述了包含光致酸产生剂化合物的光致抗蚀剂组合物，包括光致抗蚀剂组合物层的涂布基材，以及使用光致抗蚀剂组合物层形成电子器件的方法。

    Hardmask
    15.
    发明授权
    Hardmask 有权
    硬掩模

    公开(公告)号：US08795774B2

    公开(公告)日：2014-08-05

    申请号：US13624946

    申请日：2012-09-23

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Deyan Wang ,  Jibin Sun ,  Peng-Wei Chuang ,  Peter Trefonas, III ,  Cong Liu

    IPC: G03F7/004 ,  G03F7/038

    CPC classification number: C08F220/10 ,  C08F220/18 ,  G03F7/091 ,  G03F7/094

    Abstract: Compositions containing certain organometallic oligomers suitable for use as spin-on, metal hardmasks are provided, where such compositions can be tailored to provide a metal oxide hardmask having a range of etch selectivity. Also provided are methods of depositing metal oxide hardmasks using the present compositions.

    Abstract translation: 提供了包含适合用作旋涂金属硬掩模的某些有机金属低聚物的组合物，其中可以调整这些组合物以提供具有一定范围的蚀刻选择性的金属氧化物硬掩模。 还提供了使用本发明组合物沉积金属氧化物硬掩模的方法。

    Pattern formation methods
    17.
    发明授权
    Pattern formation methods 有权

    公开(公告)号：US12228859B2

    公开(公告)日：2025-02-18

    申请号：US16225551

    申请日：2018-12-19

    Applicant: Rohm and Haas Electronic Materials LLC

    Inventor： Choong-Bong Lee ,  Stefan J. Caporale ,  Jason A. DeSisto ,  Jong Keun Park ,  Cong Liu ,  Cheng-Bai Xu ,  Cecily Andes

    IPC: G03F7/11 ,  C08F220/18 ,  C08F220/28 ,  C09D133/08 ,  C09D133/14 ,  G03F7/004 ,  G03F7/038 ,  G03F7/039 ,  G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/38

    Abstract: Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

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