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    SELECTIVE SILICIDE FORMATION USING RESIST ETCHBACK
    11.
    发明申请
    SELECTIVE SILICIDE FORMATION USING RESIST ETCHBACK 有权
    选择性硅化物形成使用电阻蚀刻

    公开(公告)号：US20090111265A1

    公开(公告)日：2009-04-30

    申请号：US11924823

    申请日：2007-10-26

    申请人： Kyunghoon Min ,  Angela Hui ,  Hiroyuki Kinoshita ,  Ning Cheng ,  Mark Chang

    发明人： Kyunghoon Min ,  Angela Hui ,  Hiroyuki Kinoshita ,  Ning Cheng ,  Mark Chang

    IPC分类号： H01L21/4763

    CPC分类号： H01L27/115 ,  H01L21/28518 ,  H01L21/31144 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/11534 ,  H01L27/11568 ,  H01L29/665

    摘要： Methods of selectively forming metal silicides on a memory device are provided. The methods can include forming a mask layer over the memory device; forming a patterned resist over the mask layer; removing upper portions of the patterned resist; forming a patterned mask layer by removing portions of the mask layer that are not covered by the patterned resist; and forming metal silicides on the memory device by a chemical reaction of a metal layer formed on the memory device with portions of the memory device that are not covered by the patterned mask layer. By preventing silicidation of underlying silicon containing layers/components of the memory device that are covered by the patterned mask layer, the methods can selectively form the metal silicides on the desired portions of the memory device.

    摘要翻译： 提供了在存储器件上选择性地形成金属硅化物的方法。 所述方法可以包括在存储器件上形成掩模层; 在掩模层上形成图案化的抗蚀剂; 去除图案化抗蚀剂的上部; 通过去除未被图案化抗蚀剂覆盖的掩模层的部分来形成图案化掩模层; 以及通过形成在存储器件上的金属层与未被图案化掩模层覆盖的存储器件的部分的化学反应在存储器件上形成金属硅化物。 通过防止由图案化掩模层覆盖的存储器件的下层含硅层/部件的硅化，该方法可以选择性地在存储器件的期望部分上形成金属硅化物。

    Method and system for providing a contact hole in a semiconductor device
    13.
    发明授权
    Method and system for providing a contact hole in a semiconductor device 失效
    用于在半导体器件中提供接触孔的方法和系统

    公开(公告)号：US06764929B1

    公开(公告)日：2004-07-20

    申请号：US10151625

    申请日：2002-05-16

    申请人： Angela Hui ,  Chi Chang ,  Mark Chang

    发明人： Angela Hui ,  Chi Chang ,  Mark Chang

    IPC分类号： H01L21425

    CPC分类号： H01L21/76897 ,  H01L21/265

    摘要： A method and system for providing a contact hole between structures for a semiconductor device is disclosed. The method and system comprises etching a resist material on the semiconductor device to expose a surface of the structures; providing an implant to the surface of the structures; and removing the resist material from a gap between the structures. The method and system includes annealing the semiconductor device to cause the implant to adhere to the treated surface; and providing dielectric material within the gap. Finally, the method and system includes etching the contact hole in the gap between the structures. The contact hole can then be etched without damaging the structures. Accordingly, by providing an implant treated surface and then providing an anneal process the implant is bonded to the appropriate portion of the semiconductor structure. Due to the etch difference between the implant treated device and the non-treated surface, it is possible to etch down to the bottom of the semiconductor device without damaging the gate. Since the surface around the gate structure is treated, the etch stop layer etch at a much slower rate. Therefore, there is a much larger process margin for misalignment allowance and the contact size can be larger because the dielectric material and the surface treatment protects the gate area.

    摘要翻译： 公开了一种用于在半导体器件的结构之间提供接触孔的方法和系统。 该方法和系统包括在半导体器件上蚀刻抗蚀剂材料以暴露结构的表面; 向所述结构的表面提供植入物; 以及从结构之间的间隙去除抗蚀剂材料。 该方法和系统包括退火半导体器件以使植入物粘附到被处理的表面上; 并在间隙内提供电介质材料。 最后，该方法和系统包括蚀刻结构之间的间隙中的接触孔。 然后可以蚀刻接触孔而不损坏结构。 因此，通过提供植入物处理的表面，然后提供退火工艺，将植入物结合到半导体结构的适当部分。 由于植入物处理的设备和未处理的表面之间的蚀刻差异，可以在不损坏栅极的情况下向下蚀刻到半导体器件的底部。 由于栅极结构周围的表面被处理，蚀刻停止层以较慢的速率蚀刻。 因此，由于介电材料和表面处理保护了栅极区域，所以对于不对准余量有更大的处理余量，并且接触尺寸可以更大。

    Process for fabricating high density memory cells using a metallic hard mask
    17.
    发明授权
    Process for fabricating high density memory cells using a metallic hard mask 有权
    使用金属硬掩模制造高密度记忆单元的方法

    公开(公告)号：US06399446B1

    公开(公告)日：2002-06-04

    申请号：US09429722

    申请日：1999-10-29

    申请人： Bharath Rangarajan ,  David K. Foote ,  Fei Wang ,  Dawn M. Hopper ,  Stephen K. Park ,  Jack Thomas ,  Mark Chang ,  Mark Ramsbey

    发明人： Bharath Rangarajan ,  David K. Foote ,  Fei Wang ,  Dawn M. Hopper ,  Stephen K. Park ,  Jack Thomas ,  Mark Chang ,  Mark Ramsbey

    IPC分类号： H01L218247

    CPC分类号： H01L27/11568 ,  H01L27/115 ,  Y10S438/945

    摘要： A process for fabricating a memory cell in a two-bit EEPROM device including forming an ONO layer overlying a semiconductor substrate, depositing a hard mask overlying the ONO layer, and patterning the hard mask. The hard mask is made from tungsten, titanium, or titanium nitride. The process further includes doping the semiconductor substrate with boron causing p-type regions to form in the semiconductor substrate, and doping the semiconductor substrate with n-type dopants, such as arsenic, causing n-type regions to form in the semiconductor substrate. The exposed ONO layer is then etched to expose part of the semiconductor substrate, and a bit-line oxide region is formed overlying the semiconductor substrate. The hard mask is then stripped, preferably using an H2O2 solution.

    摘要翻译： 一种用于在二位EEPROM器件中制造存储单元的方法，包括形成覆盖在半导体衬底上的ONO层，沉积覆盖在ONO层上的硬掩模，以及对该硬掩模进行构图。 硬掩模由钨，钛或氮化钛制成。 该工艺还包括用硼掺杂导致在半导体衬底中形成p型区域的半导体衬底，并且用诸如砷的n型掺杂剂掺杂半导体衬底，从而在半导体衬底中形成n型区域。 然后对暴露的ONO层进行蚀刻以暴露半导体衬底的一部分，并且在半导体衬底上形成位线氧化物区域。 然后将硬掩模剥离，优选使用H 2 O 2溶液。

    Transmission system for a document feeder
    18.
    发明授权
    Transmission system for a document feeder 失效
    文件传送系统

    公开(公告)号：US5494271A

    公开(公告)日：1996-02-27

    申请号：US257570

    申请日：1994-06-10

    申请人： Jeffrey Wun ,  Steven Chiu ,  Mark Chang

    发明人： Jeffrey Wun ,  Steven Chiu ,  Mark Chang

    IPC分类号： B65H3/06 ,  B65H5/06

    CPC分类号： B65H3/0669 ,  Y10T74/19172 ,  Y10T74/1921

    摘要： An improved transmission system for a document feeder, in which a constant one-way-rotating gear train is mounted in an output zone so as to cause a transmission shaft in the output zone to rotate in one direction only to send out a sheet of document no matter the driving gear rotates clockwise or counter-clockwise; therefore, as soon as a first sheet of document moves out of the scanning line without moving out of the output zone, the driving gear will change its rotation clockwise so as to have a next sheet of document fed into the scanning zone; therefore, the feeding distance between two sheets of document will be reduced, and consequently the whole feeding time for a document will be reduced, too.

    摘要翻译： 一种用于文件馈送器的改进的传输系统，其中恒定的单向旋转齿轮系安装在输出区域中，以便使得输出区域中的传动轴在一个方向上旋转，仅发出一张文件 无论主动齿轮顺时针还是逆时针旋转; 因此，只要第一张原稿从扫描线移出而不移出输出区域，驱动齿轮将顺时针转动其旋转，以便将下一张原稿送入扫描区域; 因此，两纸张之间的进纸距离将减小，因此文件的整个进纸时间也将减少。