公开(公告)号：US20210313353A1

公开(公告)日：2021-10-07

申请号：US17350133

申请日：2021-06-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: H01L27/12 ,  G02F1/1362 ,  H01L29/66 ,  G02F1/1368 ,  H01L29/24 ,  H01L29/786

Abstract: Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.

公开(公告)号：US20200176486A1

公开(公告)日：2020-06-04

申请号：US16780034

申请日：2020-02-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  G11C19/28 ,  G09G3/20 ,  H01L29/45 ,  H01L29/10 ,  H01L29/423 ,  H01L29/417 ,  H01L29/04

Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

公开(公告)号：US20190221170A1

公开(公告)日：2019-07-18

申请号：US16362759

申请日：2019-03-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Yoshiharu HIRAKATA

IPC: G09G3/34 ,  G09G3/20 ,  G02F1/1337 ,  G02F1/1368 ,  G02F1/1335 ,  G02F1/1343 ,  G09G3/36

CPC classification number: G09G3/3413 ,  G02F1/133345 ,  G02F1/1334 ,  G02F1/133514 ,  G02F1/133555 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2203/01 ,  G02F2203/04 ,  G09G3/2003 ,  G09G3/3406 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0237 ,  G09G2310/08 ,  G09G2320/0247 ,  G09G2320/0261 ,  G09G2320/064 ,  G09G2320/0646 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2330/022

Abstract: An object is to provide a liquid crystal display device which can recognize image display even when the liquid crystal display device is used in a dim environment. In one pixel, a pixel electrode including both of a region where incident light through a liquid crystal layer is reflected and a transmissive region is provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. When there is external light with insufficient brightness, that is, in a dim environment, the backlight emits weak light and an image is displayed in the reflective mode, whereby image display can be performed.

公开(公告)号：US20190214058A1

公开(公告)日：2019-07-11

申请号：US16354326

申请日：2019-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA ,  Shunpei YAMAZAKI

IPC: G11C5/10 ,  H01L27/02 ,  H01L27/12 ,  H01L27/108 ,  H01L27/06 ,  G11C7/12 ,  G11C11/4097 ,  G11C11/4094 ,  G11C11/408 ,  G11C7/18 ,  H01L29/786

Abstract: An object of one embodiment of the present invention is to propose a memory device in which a period in which data is held is ensured and memory capacity per unit area can be increased. In the memory device of one embodiment of the present invention, bit lines are divided into groups, and word lines are also divided into groups. The word lines assigned to one group are connected to the memory cell connected to the bit lines assigned to the one group. Further, the driving of each group of bit lines is controlled by a dedicated bit line driver circuit of a plurality of bit line driver circuits. In addition, cell arrays are formed on a driver circuit including the above plurality of bit line driver circuits and a word line driver circuit. The driver circuit and the cell arrays overlap each other.

公开(公告)号：US20190139988A1

公开(公告)日：2019-05-09

申请号：US16234990

申请日：2018-12-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  G02F1/1362 ,  H01L29/66 ,  G02F1/1368 ,  H01L29/417

Abstract: Photolithography and etching steps for forming an island-shaped semiconductor layer are omitted, and a liquid crystal display device is manufactured with four photolithography steps: a step of forming a gate electrode (including a wiring formed using the same layer as the gate electrode), a step of forming source and drain electrodes (including a wiring formed using the same layer as the source and drain electrodes), a step of forming a contact hole (including the removal of an insulating layer and the like in a region other than the contact hole), and a step of forming a pixel electrode (including a wiring formed using the same layer as the pixel electrode). By the reduction in the number of photolithography steps, a liquid crystal display device can be provided at low cost and high productivity. Formation of a parasitic channel is prevented by an improvement in shape and potential of a wiring.

公开(公告)号：US20190035818A1

公开(公告)日：2019-01-31

申请号：US16130550

申请日：2018-09-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/04 ,  H01L27/088 ,  H01L21/02

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

公开(公告)号：US20190006397A1

公开(公告)日：2019-01-03

申请号：US16104397

申请日：2018-08-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L21/84 ,  H01L27/118 ,  H01L27/1156 ,  H01L27/11521 ,  H01L27/11517 ,  H01L27/11 ,  H01L27/108 ,  G11C16/26 ,  G11C16/04

Abstract: An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

公开(公告)号：US20180138729A1

公开(公告)日：2018-05-17

申请号：US15868520

申请日：2018-01-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun KOYAMA ,  Yutaka SHIONOIRI

IPC: H02J7/00 ,  H02J7/02 ,  H02J7/14 ,  B60L11/00 ,  B60L11/18

CPC classification number: H02J7/0054 ,  B60L50/20 ,  B60L53/12 ,  B60L53/36 ,  B60L2200/10 ,  B60L2200/12 ,  B60L2200/26 ,  H02J7/025 ,  H02J7/1407 ,  H02J17/00 ,  H02J50/10 ,  H02J50/12 ,  H02J50/20 ,  H02J50/40 ,  H02J50/90 ,  Y02T10/7005 ,  Y02T10/7072 ,  Y02T90/12 ,  Y02T90/121 ,  Y02T90/122 ,  Y02T90/125 ,  Y02T90/14

Abstract: An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the intensity of radio waves radiated to the surroundings. A moving object having a plurality of antennas receives radio waves transmitted from a power feeding device. At least one of the plurality of antennas is installed apart from the other antenna(s) of the moving object. Then, the radio waves transmitted from the power feeding device are received by all the plurality of antennas and converted into electric energy. Alternatively, the radio waves transmitted from the power feeding device are received by one or more selected from the plurality of antennas and converted into electric energy.

公开(公告)号：US20180047730A1

公开(公告)日：2018-02-15

申请号：US15728797

申请日：2017-10-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Keitaro IMAI ,  Jun KOYAMA

IPC: H01L27/108 ,  G11C11/405 ,  G11C16/02 ,  H01L21/8258 ,  H01L27/06 ,  G11C11/404 ,  H01L27/105 ,  H01L27/1156 ,  H01L27/12 ,  H01L29/786 ,  H01L27/088

CPC classification number: H01L27/10802 ,  G11C11/404 ,  G11C11/405 ,  G11C16/02 ,  H01L21/8258 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/0922 ,  H01L27/105 ,  H01L27/1156 ,  H01L27/12 ,  H01L27/1225 ,  H01L29/7869

Abstract: The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10−13 A or less.

公开(公告)号：US20180026053A1

公开(公告)日：2018-01-25

申请号：US15677125

申请日：2017-08-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Hideaki SHISHIDO ,  Jun KOYAMA

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L29/7869

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.