公开(公告)号：US10475820B2

公开(公告)日：2019-11-12

申请号：US16143970

申请日：2018-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junpei Yanaka ,  Kayo Kumakura ,  Masataka Sato ,  Satoru Idojiri ,  Kensuke Yoshizumi ,  Mari Tateishi ,  Natsuko Takase

IPC: H01L27/12 ,  H01L23/29 ,  H01L27/32 ,  H01L51/00

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

公开(公告)号：US10211239B2

公开(公告)日：2019-02-19

申请号：US15666758

申请日：2017-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Seiji Yasumoto ,  Yuka Kobayashi ,  Satoru Idojiri

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/47 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/136

Abstract: To increase the yield of the separation process. To produce display devices formed through the separation process with higher mass productivity. A first layer is formed using a material including a resin or a resin precursor over a substrate. Then, first heat treatment is performed on the first layer, whereby a first resin layer including a residue of an oxydiphthalic acid is formed. Then, a layer to be separated is formed over the first resin layer. Then, the layer to be separated and the substrate are separated from each other. The first heat treatment is performed in an atmosphere containing oxygen.

公开(公告)号：US09764488B2

公开(公告)日：2017-09-19

申请号：US14468801

申请日：2014-08-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Ryu Komatsu ,  Kohei Yokoyama ,  Masakatsu Ohno ,  Satoru Idojiri ,  Hisao Ikeda ,  Yasuhiro Jinbo ,  Hiroki Adachi ,  Yoshiharu Hirakata ,  Shingo Eguchi ,  Daiki Nakamura

IPC: C03B33/027 ,  C03B33/07 ,  B26D3/08 ,  G02F1/13 ,  B26D3/28 ,  B26F1/38 ,  C03B33/037

CPC classification number: B26D3/282 ,  B26D3/08 ,  B26F1/3826 ,  C03B33/027 ,  C03B33/037 ,  C03B33/07 ,  G02F1/1303 ,  Y02P40/57 ,  Y10T83/0281 ,  Y10T156/1051 ,  Y10T156/1082 ,  Y10T156/1126 ,  Y10T156/1137 ,  Y10T156/1168 ,  Y10T156/1195 ,  Y10T156/12 ,  Y10T156/1348 ,  Y10T156/1788 ,  Y10T156/1793 ,  Y10T156/1928 ,  Y10T156/1933 ,  Y10T156/1939 ,  Y10T156/1961 ,  Y10T156/1967 ,  Y10T156/1994

Abstract: A device for forming a separation starting point that allows separation of a surface layer of a processed member to form a remaining portion is provided. A manufacturing device of a stack including a support and a remaining portion of a processed member whose surface layer is separated is provided. The device for forming the separation starting point includes a stage that supports the processed member, a cutter that faces the stage, a head portion that supports the cutter, an arm portion that supports the head portion, and a moving mechanism that relatively moves the cutter to the stage.

公开(公告)号：US09559317B2

公开(公告)日：2017-01-31

申请号：US15145260

申请日：2016-05-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L21/00 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L27/12 ,  H01L51/50 ,  H01L41/314 ,  H01L27/32

CPC classification number: H01L27/3272 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L41/314 ,  H01L51/0024 ,  H01L51/0027 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5096 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/521

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US12176419B2

公开(公告)日：2024-12-24

申请号：US17427236

申请日：2020-02-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takashi Hamochi ,  Kenichi Okazaki ,  Satoru Idojiri ,  Yasutaka Nakazawa

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. A method for fabricating the semiconductor device includes a step of forming a semiconductor layer including a metal oxide; a step of forming, over the semiconductor layer, a first conductive layer and a second conductive layer that are apart from each other over the semiconductor layer; a step of performing plasma treatment using a mixed gas including an oxidizing gas and a reducing gas on a region where the semiconductor layer is exposed; a step of forming a first insulating layer over the semiconductor layer, the first conductive layer, and the second conductive layer; and a step of forming a second insulating layer over the first insulating layer. The first insulating layer is formed by a plasma-enhanced chemical vapor deposition method using a mixed gas including a gas containing silicon, an oxidizing gas, and an ammonia gas. The first insulating layer is formed successively after the plasma treatment without exposure to the air.

公开(公告)号：US11856836B2

公开(公告)日：2023-12-26

申请号：US17479329

申请日：2021-09-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Kayo Kumakura ,  Yuka Sato ,  Satoru Idojiri ,  Hiroki Adachi ,  Kenichi Okazaki

IPC: H01L27/15 ,  H10K71/00 ,  H10K50/842 ,  H10K71/40 ,  H10K77/10

CPC classification number: H10K71/00 ,  H10K50/8426 ,  H10K71/40 ,  H10K77/111

Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

公开(公告)号：US11672148B2

公开(公告)日：2023-06-06

申请号：US17307088

申请日：2021-05-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/00 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L51/50 ,  H01L41/314

CPC classification number: H01L27/3272 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/322 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0024 ,  H01L51/0027 ,  H01L51/0097 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/56 ,  H01L27/3244 ,  H01L41/314 ,  H01L51/5096 ,  H01L51/5284 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/50

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US11616206B2

公开(公告)日：2023-03-28

申请号：US17177457

申请日：2021-02-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Kayo Kumakura ,  Hiroyuki Watanabe ,  Seiji Yasumoto ,  Satoru Idojiri ,  Hiroki Adachi

IPC: H01L51/00 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

公开(公告)号：US10854697B2

公开(公告)日：2020-12-01

申请号：US16204102

申请日：2018-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L51/50 ,  H01L41/314

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US20200273935A1

公开(公告)日：2020-08-27

申请号：US16872806

申请日：2020-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi TAKESHIMA

IPC: H01L27/32 ,  B23K26/04 ,  B23K26/08 ,  H01L51/00 ,  H01L29/786 ,  B23K26/06 ,  H01L27/12 ,  B23K26/0622 ,  H01L51/52 ,  H01L29/24 ,  H01L51/56 ,  H01L29/66

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.