公开(公告)号：US11430817B2

公开(公告)日：2022-08-30

申请号：US15697627

申请日：2017-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Yukinori Shima ,  Masami Jintyou ,  Takashi Hamochi ,  Satoshi Higano ,  Yasuharu Hosaka ,  Toshimitsu Obonai

IPC: H01L27/12 ,  H01L49/02 ,  H01L29/786 ,  H01L29/45

Abstract: A novel semiconductor device in which a metal film containing copper (Cu) is used for a wiring, a signal line, or the like in a transistor including an oxide semiconductor film is provided. The semiconductor device includes an oxide semiconductor film having conductivity on an insulating surface and a conductive film in contact with the oxide semiconductor film having conductivity. The conductive film includes a Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti).

公开(公告)号：US11282965B2

公开(公告)日：2022-03-22

申请号：US16959259

申请日：2019-01-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasutaka Nakazawa ,  Takashi Hamochi ,  Takayuki Ohide ,  Kenichi Okazaki

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/443 ,  H01L21/4763 ,  H01L29/45 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/32

Abstract: A semiconductor device with favorable electrical characteristics is provided. A semiconductor device with stable electrical characteristics is provided. A highly reliable display device is provided. The semiconductor device is fabricated by a method that includes a first step of forming a semiconductor layer containing a metal oxide, a second step of forming a conductive film over the semiconductor layer, a third step of etching the conductive film such that the conductive film is divided over the semiconductor layer and a portion of the semiconductor layer is uncovered, and a fourth step of performing first treatment on the conductive film and the portion of the semiconductor layer. The conductive film contains copper, silver, gold, or aluminum. The first treatment is plasma treatment in an atmosphere containing a mixed gas of a first gas containing an oxygen element and a second gas containing a hydrogen element.

公开(公告)号：US11271098B2

公开(公告)日：2022-03-08

申请号：US16904836

申请日：2020-06-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Takahiro Iguchi ,  Masami Jintyou ,  Takashi Hamochi ,  Junichi Koezuka

IPC: H01L29/66 ,  H01L29/786 ,  H01L21/4757 ,  H01L21/4763 ,  H01L21/385 ,  H01L21/02 ,  H01L29/49

Abstract: To provide a semiconductor device with favorable electrical characteristics. To provide a method for manufacturing a semiconductor device with high productivity. To reduce the temperatures in a manufacturing process of a semiconductor device. An island-like oxide semiconductor layer is formed over a first insulating film; a second insulating film and a first conductive film are formed in this order, covering the oxide semiconductor layer; oxygen is supplied to the second insulating film through the first conductive film; a metal oxide film is formed over the second insulating film in an atmosphere containing oxygen; a first gate electrode is formed by processing the metal oxide film; a third insulating film is formed, covering the first gate electrode and the second insulating film; and first heat treatment is performed. The second insulating film and the third insulating film each include oxide. The highest temperature in the above steps is 340° C. or lower.

公开(公告)号：US10535742B2

公开(公告)日：2020-01-14

申请号：US16152850

申请日：2018-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu Hosaka ,  Toshimitsu Obonai ,  Yukinori Shima ,  Masami Jintyou ,  Daisuke Kurosaki ,  Takashi Hamochi ,  Junichi Koezuka ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: H01L29/24 ,  H01L27/12 ,  H01L29/786 ,  H01L29/778 ,  C04B35/622 ,  C04B35/01 ,  C23C14/58 ,  C23C14/08 ,  C03C17/245 ,  C04B35/453

Abstract: A metal oxide film includes indium, , ( is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.

公开(公告)号：US10158008B2

公开(公告)日：2018-12-18

申请号：US15286892

申请日：2016-10-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Yasuharu Hosaka ,  Yasutaka Nakazawa ,  Takashi Hamochi ,  Takahiro Sato ,  Shunpei Yamazaki

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/778 ,  H01L29/40 ,  H01L23/29 ,  H01L21/02 ,  H01L29/49 ,  H01L29/24 ,  H01L21/383 ,  H01L23/31

Abstract: A change in electrical characteristics of a semiconductor device including an oxide semiconductor is prevented, and the reliability of the semiconductor device is improved. An oxide semiconductor is formed over a substrate; an insulator is formed over the oxide semiconductor; a metal oxide is formed over the insulator; a conductor is formed over the metal oxide; a portion of the oxide semiconductor is exposed by removing the conductor, the metal oxide, and the insulator over the oxide semiconductor; plasma treatment is performed on a surface of the exposed portion of the oxide semiconductor; and a nitride insulator is formed over the exposed portion of the oxide semiconductor and over the conductor. The plasma treatment is performed in a mixed atmosphere of an argon gas and a nitrogen gas.

公开(公告)号：US10141337B2

公开(公告)日：2018-11-27

申请号：US15723227

申请日：2017-10-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Yoshinori Ieda ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L27/12 ,  H01L27/06 ,  H01L27/088

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

公开(公告)号：US09831347B2

公开(公告)日：2017-11-28

申请号：US15161329

申请日：2016-05-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima ,  Takashi Hamochi ,  Yasutaka Nakazawa

IPC: H01L29/10 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/32

CPC classification number: H01L29/78606 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/13394 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/1233 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/1033 ,  H01L29/45 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device comprising a first transistor, a second insulating film, a conductive film, and a capacitor is provided. The first transistor comprises a first oxide semiconductor film, a gate insulating film over the first oxide semiconductor film, and a gate electrode over the gate insulating film. The second insulating film is provided over the gate electrode. The conductive film is electrically connected to the first oxide semiconductor film. The capacitor comprises a second oxide semiconductor film, the second insulating film over the second oxide semiconductor film, and the conductive film over the second insulating film. The first oxide semiconductor film comprises a first region and a second region. Each of a carrier density of the second region and a carrier density of the second oxide semiconductor film is higher than a carrier density of the first region.

公开(公告)号：US09793295B2

公开(公告)日：2017-10-17

申请号：US15251375

申请日：2016-08-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Tetsuhiro Tanaka ,  Yoshinori Ieda ,  Toshiyuki Miyamoto ,  Masafumi Nomura ,  Takashi Hamochi ,  Kenichi Okazaki ,  Mitsuhiro Ichijo ,  Toshiya Endo

IPC: H01L27/12 ,  H01L27/06 ,  H01L27/088

CPC classification number: H01L27/1207 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/1225

Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.

公开(公告)号：US09647128B2

公开(公告)日：2017-05-09

申请号：US14505004

申请日：2014-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Yukinori Shima ,  Masahiko Hayakawa ,  Takashi Hamochi ,  Suzunosuke Hiraishi

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L21/477 ,  H01L21/02112 ,  H01L21/02403 ,  H01L21/28 ,  H01L29/24 ,  H01L29/78606 ,  H01L29/7869

Abstract: To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film which is between the gate electrode and the oxide semiconductor film and is in contact with a surface of the oxide semiconductor film, a protective film in contact with an opposite surface of the surface of the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film. In the gate insulating film or the protective film, the amount of gas having a mass-to-charge ratio m/z of 17 released by heat treatment is greater than the amount of nitrogen oxide released by heat treatment.

公开(公告)号：US09570626B2

公开(公告)日：2017-02-14

申请号：US15071700

申请日：2016-03-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Toshinari Sasaki ,  Shuhei Yokoyama ,  Takashi Hamochi

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/02112 ,  H01L21/02274 ,  H01L21/385 ,  H01L23/3171 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/4966 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film containing oxygen in excess of the stoichiometric composition is formed as the protective film under the following conditions: a substrate placed in a treatment chamber evacuated to a vacuum level is held at a temperature higher than or equal to 180° C. and lower than or equal to 260° C.; a source gas is introduced into the treatment chamber so that the pressure in the treatment chamber is set to be higher than or equal to 100 Pa and lower than or equal to 250 Pa; and a high-frequency power higher than or equal to 0.17 W/cm2 and lower than or equal to 0.5 W/cm2 is supplied to an electrode provided in the treatment chamber.

Abstract translation: 在包括晶体管上的包括氧化物半导体膜和保护膜的晶体管的半导体器件中，在以下条件下形成含有超过化学计量组成的氧的氧化物绝缘膜作为保护膜：放置在处理室中的衬底 抽真空至真空度保持在高于或等于180℃且低于或等于260℃的温度; 将源气体引入处理室，使得处理室中的压力设定为高于或等于100Pa且小于或等于250Pa; 并且将高于或等于0.17W / cm 2且低于或等于0.5W / cm 2的高频功率供应到设置在处理室中的电极。