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公开(公告)号：US09111840B2
公开(公告)日：2015-08-18
申请号：US14053098
申请日：2013-10-14
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jeong Hun Heo , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: Exemplary embodiments of the present invention disclose a semiconductor device and a method of fabricating the same. The semiconductor device includes a gallium nitride substrate, a plurality of semiconductor stacks disposed on the gallium nitride substrate, and an insulation pattern disposed between the gallium nitride substrate and the plurality of semiconductor stacks, the insulation pattern insulating the semiconductor stacks from the gallium nitride substrate.
Abstract translation: 本发明的示例性实施例公开了一种半导体器件及其制造方法。 半导体器件包括氮化镓衬底，设置在氮化镓衬底上的多个半导体堆叠以及设置在氮化镓衬底和多个半导体堆叠之间的绝缘图案，绝缘图案使半导体堆叠与氮化镓衬底绝缘 。
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12.发明申请METHOD FOR SEPARATING EPITAXIAL LAYERS AND GROWTH SUBSTRATES, AND SEMICONDUCTOR DEVICE USING SAME 有权用于分离外延层和生长衬底的方法以及使用其的半导体器件公开(公告)号：US20150069418A1
公开(公告)日：2015-03-12
申请号：US14386775
申请日：2013-03-19
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jeong Hun Heo , Joo Won Choi , Choong Min Lee , Su Jin Shin , Ki Bum Nam , Yu Dae Han , A Ram Cha Lee
CPC classification number: H01L33/24 , H01L21/0243 , H01L21/02488 , H01L21/02494 , H01L21/0254 , H01L21/02664 , H01L29/0657 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/025 , H01L33/20 , H01L33/22
Abstract: The present invention relates to a method for separating epitaxial layers and growth substrates, and to a semiconductor device using same. According to the present invention, a semiconductor device is provided which comprises a supporting substrate and a plurality of semiconductor layers provided on the supporting substrate, wherein the uppermost layer of the semiconductor layers has a surface of non-uniform roughness.
Abstract translation: 本发明涉及用于分离外延层和生长衬底的方法以及使用其的半导体器件。 根据本发明，提供一种半导体器件，其包括支撑衬底和设置在支撑衬底上的多个半导体层，其中半导体层的最上层具有不均匀粗糙度的表面。
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公开(公告)号：US20180175245A1
公开(公告)日：2018-06-21
申请号：US15883774
申请日：2018-01-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
CPC classification number: H01L33/32 , H01L33/007 , H01L33/06
Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.
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公开(公告)号：US20170033263A1
公开(公告)日：2017-02-02
申请号：US15294563
申请日：2016-10-14
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
CPC classification number: H01L33/32 , H01L33/007 , H01L33/06
Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.
Abstract translation: 示例性实施例提供了一种UV发光二极管及其制造方法。 制造UV发光二极管的方法包括生长包括AlGaN的第一n型半导体层，其中第一n型半导体层的生长包括改变生长室内的生长压力并改变n型的流速 掺杂剂源引入生长室。 第一n型半导体层的生长期间的压力变化包括至少一个增压周期和随时间推移的压力降低周期，并且n型掺杂剂源的流量变化包括增加 n型掺杂剂源，其形式为至少一个脉冲。 通过该方法制造的UV发光二极管具有优异的结晶度。
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公开(公告)号：US09537045B2
公开(公告)日：2017-01-03
申请号：US14796421
申请日：2015-07-10
Applicant: Seoul Viosys Co., Ltd.
Inventor： Jeong Hun Heo , Yeo Jin Yoon , Joo Won Choi , Joon Hee Lee , Chang Yeon Kim , Su Young Lee
CPC classification number: H01L33/0075 , H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066 , H01L2924/00
Abstract: A method of fabricating a semiconductor device includes forming an insulation pattern including a mask region and an open region on a gallium nitride substrate, growing gallium nitride semiconductor layers to cover the insulation pattern, and patterning the semiconductor layers to form a plurality of semiconductor stacks separated from each other, the plurality of semiconductor stacks being electrically isolated from the gallium nitride substrate by the insulation pattern.
Abstract translation: 制造半导体器件的方法包括在氮化镓衬底上形成包括掩模区域和开放区域的绝缘图案，生长氮化镓半导体层以覆盖绝缘图案，以及图案化半导体层以形成分离的多个半导体堆叠 所述多个半导体堆叠通过所述绝缘图案与所述氮化镓衬底电隔离。
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Patent Agency Ranking
公开(公告)号：US20160027964A1
公开(公告)日：2016-01-28
申请号：US14810464
申请日：2015-07-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
CPC classification number: H01L33/32 , H01L33/007 , H01L33/06
Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.
Abstract translation: 示例性实施例提供了一种UV发光二极管及其制造方法。 制造UV发光二极管的方法包括生长包括AlGaN的第一n型半导体层，其中第一n型半导体层的生长包括改变生长室内的生长压力并改变n型的流速 掺杂剂源引入生长室。 第一n型半导体层的生长期间的压力变化包括至少一个增压周期和随时间推移的压力降低周期，并且n型掺杂剂源的流量变化包括增加 n型掺杂剂源，其形式为至少一个脉冲。 通过该方法制造的UV发光二极管具有优异的结晶度。
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公开(公告)号：US09048086B2
公开(公告)日：2015-06-02
申请号：US14264924
申请日：2014-04-29
Applicant: Seoul Viosys Co., Ltd.
Inventor： Su Youn Hong , Joo Won Choi , Jeong Hun Heo , Su Jin Shin , Choong Min Lee
CPC classification number: H01L21/02032 , H01L21/02002 , H01L21/306 , H01L21/30612 , H01L21/30617 , H01L33/0079
Abstract: Exemplary embodiments of the present disclosure relate to a substrate recycling method and a recycled substrate. The method includes separating a first surface of a substrate from an epitaxial layer; forming a protective layer on an opposing second surface of the substrate; electrochemically etching the first surface of the substrate; and chemically etching the electrochemically etched first surface of the substrate.
Abstract translation: 本公开的示例性实施方案涉及基材回收方法和再循环基材。 该方法包括从外延层分离衬底的第一表面; 在所述基板的相对的第二表面上形成保护层; 电化学蚀刻衬底的第一表面; 以及化学蚀刻所述基板的电化学蚀刻的第一表面。
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公开(公告)号：US10319882B2
公开(公告)日：2019-06-11
申请号：US15883774
申请日：2018-01-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.
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公开(公告)号：US20180090641A1
公开(公告)日：2018-03-29
申请号：US15563538
申请日：2016-03-29
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Ki Yon Park , Jeong Hun Heo , Yu Dae Han , Gun Woo Han
CPC classification number: H01L33/12 , H01L33/007 , H01L33/0079 , H01L33/04 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/38
Abstract: Disclosed herein is a UV light emitting diode. The UV light emitting diode includes a first conductive type semiconductor layer; a first stress adjustment layer disposed on the first conductive type semiconductor layer, and including a first nitride layer including Al and a second nitride layer disposed on the first nitride layer and having a lower Al composition ratio than the first nitride layer; an active layer disposed on the first stress adjustment layer; and a second conductive type semiconductor layer disposed on the active layer, wherein the first stress adjustment layer includes an Al delta layer inserted in the first nitride layer, and a lower surface of the first nitride layer in which the Al delta layer is inserted has greater average tensile stress than a lower surface of the second nitride layer directly disposed on the first nitride layer.
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公开(公告)号：US09496455B2
公开(公告)日：2016-11-15
申请号：US14810464
申请日：2015-07-27
Applicant: Seoul Viosys Co., Ltd.
Inventor： Ki Yon Park , Jeong Hun Heo , Hwa Mok Kim , Gun Woo Han
CPC classification number: H01L33/32 , H01L33/007 , H01L33/06
Abstract: Exemplary embodiments provide a UV light emitting diode and a method of fabricating the same. The method of fabricating a UV light emitting diode includes growing a first n-type semiconductor layer including AlGaN, wherein growth of the first n-type semiconductor layer includes changing a growth pressure within a growth chamber and changing a flow rate of an n-type dopant source introduced into the growth chamber. A pressure change during growth of the first n-type semiconductor layer includes at least one cycle of a pressure increasing period and a pressure decreasing period over time, and change in flow rate of the n-type dopant source includes increasing the flow rate of the n-type dopant source in the form of at least one pulse. The UV light emitting diode fabricated by the method has excellent crystallinity.
Abstract translation: 示例性实施例提供了一种UV发光二极管及其制造方法。 制造UV发光二极管的方法包括生长包括AlGaN的第一n型半导体层，其中第一n型半导体层的生长包括改变生长室内的生长压力并改变n型的流速 掺杂剂源引入生长室。 第一n型半导体层的生长期间的压力变化包括至少一个增压周期和随时间推移的压力降低周期，并且n型掺杂剂源的流量变化包括增加 n型掺杂剂源，其形式为至少一个脉冲。 通过该方法制造的UV发光二极管具有优异的结晶度。
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