中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

23 records (took 0.024 seconds)

    LIGHT EMITTING ELEMENT
    11.
    发明申请
    LIGHT EMITTING ELEMENT 审中-公开

    公开(公告)号：US20180166608A1

    公开(公告)日：2018-06-14

    申请号：US15843847

    申请日：2017-12-15

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Duk Il Suh ,  Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

    IPC: H01L33/24 ,  H01L33/14 ,  H01L33/38 ,  H01L33/42 ,  H01L23/00 ,  H01L33/22

    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

    Light emitting element
    14.
    发明授权
    Light emitting element 审中-公开

    公开(公告)号：US10672951B2

    公开(公告)日：2020-06-02

    申请号：US15843847

    申请日：2017-12-15

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Duk Il Suh ,  Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

    IPC: H01L33/24 ,  H01L33/42 ,  H01L33/38 ,  H01L33/22 ,  H01L33/14 ,  H01L23/00

    Abstract: The light emitting element is provided to comprise: a first conductive type semiconductor layer; a mesa; a current blocking layer; a transparent electrode; a first electrode pad and a first electrode extension; a second electrode pad and a second electrode extension; and an insulation layer partially located on the lower portion of the first electrode, wherein the mesa includes at least one groove formed on a side thereof, the first conductive type semiconductor layer is partially exposed through the groove, the insulation layer includes an opening through which the exposed first conductive type semiconductor layer is at least partially exposed, the first electrode extension includes extension contact portions in contact with the first conductive type semiconductor layer through an opening, and the second electrode extension includes an end with a width different from the average width of the second electrode extension.

    Compact light emitting diode chip and light emitting device including the same
    17.
    发明授权
    Compact light emitting diode chip and light emitting device including the same 有权

    公开(公告)号：US10107458B2

    公开(公告)日：2018-10-23

    申请号：US15852704

    申请日：2017-12-22

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Sang Won Woo ,  Ji Hye Kim

    IPC: F21K9/232 ,  G06F1/16 ,  H01L25/075 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H05K1/18 ,  H01L33/38 ,  F21Y107/70

    Abstract: A light emitting diode chip includes: a first conductive type semiconductor layer disposed on a substrate; a mesa disposed on the first conductive type semiconductor layer and including an active layer and a second conductive type semiconductor layer; at least one groove disposed on a side surface of the mesa forming a concave region; an extension electrode forming ohmic contact with the first conductive type semiconductor layer in the concave region; an insulation layer covering the extension electrode, the first conductive type semiconductor layer, and the mesa, and including at least one first opening exposing the extension electrode and a second opening; a first pad electrode disposed on the insulation layer and electrically connected to the first conductive type semiconductor layer through the first opening; and a second pad electrode disposed on the insulation layer and electrically connected to the second conductive type semiconductor layer through the second opening.

    ULTRAVIOLET LIGHT EMITTING DEVICE HAVING CURRENT BLOCKING LAYER
    18.
    发明申请
    ULTRAVIOLET LIGHT EMITTING DEVICE HAVING CURRENT BLOCKING LAYER 审中-公开

    公开(公告)号：US20180198023A1

    公开(公告)日：2018-07-12

    申请号：US15865051

    申请日：2018-01-08

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Ji Hye Kim ,  Sang Won Woo

    IPC: H01L33/14 ,  H01L33/46 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40

    CPC classification number: H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0016

    Abstract: Described herein is a highly efficient light emitting device. The light emitting device includes: a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; a current blocking layer disposed on the second conductivity-type semiconductor layer; a transparent electrode layer covering the current blocking layer; a first electrode electrically connected to the first conductivity-type semiconductor layer; a second electrode disposed on the transparent electrode layer and electrically connected to the transparent electrode layer, the second electrode including a second electrode pad and a second electrode extension extending from the second electrode pad; and a second reflective layer interposed between the second electrode and the transparent electrode layer, wherein each of the second electrode pad and the second electrode extension covers at least part of the current blocking layer.

Patent Agency Ranking