公开(公告)号：US10971418B2

公开(公告)日：2021-04-06

申请号：US16573344

申请日：2019-09-17

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Bradley Paul Barber ,  Kezia Cheng

IPC: H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  B81B7/00

Abstract: According to various aspects and embodiments, a support structure for packaging an electronic device is provided. In one example, a packaged electronic device includes a substrate, at least one electronic device disposed on the substrate, an encapsulation structure disposed on the substrate and having a wall that forms a perimeter around the at least one electronic device, and at least one support structure formed from a photosensitive polymer and disposed adjacent the wall of the encapsulation structure. The at least one support structure has a configuration that provides at least one of increased adhesion and mechanical strength to the encapsulation structure.

公开(公告)号：US09553049B2

公开(公告)日：2017-01-24

申请号：US13774228

申请日：2013-02-22

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/00 ,  H01L21/469 ,  H01L23/485 ,  H01L29/47 ,  H01L29/45 ,  H01L29/41

CPC classification number: H01L23/53238 ,  H01L21/469 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/8252 ,  H01L23/485 ,  H01L23/4855 ,  H01L23/5283 ,  H01L23/532 ,  H01L23/53223 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0605 ,  H01L29/41 ,  H01L29/452 ,  H01L29/475 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a first titanium (Ti) layer disposed over a compound semiconductor, a first barrier layer disposed over the first Ti layer, a second Ti layer disposed over the first barrier layer, and a copper (Cu) layer disposed over the second Ti layer. The second Ti layer can be configured to inhibit or reduce alloying of the Cu layer and the first barrier layer. The first Ti layer, the first barrier layer, and the second Ti layer can be configured to yield a barrier between the Cu layer and an ohmic metal layer formed on the compound semiconductor. The metalized structure can further include a third Ti layer disposed over the Cu layer and a second barrier layer disposed over the third Ti layer. The first and second barrier layers can include platinum (Pt) and/or palladium (Pd).

Abstract translation: 公开了与半导体的金属化相关的器件和方法。 金属化结构可以包括设置在化合物半导体上的第一钛（Ti）层，设置在第一Ti层上的第一势垒层，设置在第一阻挡层上的第二Ti层和设置在第一Ti层上的铜（Cu）层 第二Ti层。 第二Ti层可以被配置为抑制或减少Cu层和第一阻挡层的合金化。 第一Ti层，第一势垒层和第二Ti层可以被配置为在Cu层和形成在化合物半导体上的欧姆金属层之间产生阻挡层。 金属化结构还可以包括设置在Cu层上的第三Ti层和设置在第三Ti层上的第二阻挡层。 第一和第二阻挡层可以包括铂（Pt）和/或钯（Pd）。

公开(公告)号：US09443803B2

公开(公告)日：2016-09-13

申请号：US13774988

申请日：2013-02-22

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: H01L29/06 ,  H01L23/532 ,  H01L21/768 ,  H01L23/485 ,  H01L23/00 ,  H01L21/469

CPC classification number: H01L23/53238 ,  H01L21/469 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/8252 ,  H01L23/485 ,  H01L23/4855 ,  H01L23/5283 ,  H01L23/532 ,  H01L23/53223 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0605 ,  H01L29/41 ,  H01L29/452 ,  H01L29/475 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a stack disposed over a compound semiconductor, with the stack including a barrier, a copper (Cu) layer disposed over the barrier, and a first titanium (Ti) layer disposed over the Cu layer. The metalized structure can further include a sputtered titanium tungsten (TiW) layer disposed over the first Ti layer. The barrier can include an assembly of titanium nitride (TiN) and Ti layers. The metalized structure can further include a second Ti layer disposed over the sputtered TiW layer.

Abstract translation: 公开了与半导体的金属化相关的器件和方法。 金属化结构可以包括设置在化合物半导体上的堆叠，堆叠包括阻挡层，设置在阻挡层上的铜（Cu）层和设置在Cu层上的第一钛（Ti）层。 金属化结构还可以包括设置在第一Ti层之上的溅射钛钨（TiW）层。 阻挡层可以包括氮化钛（TiN）和Ti层的组件。 金属化结构还可以包括设置在溅射TiW层上的第二Ti层。

公开(公告)号：US08956979B2

公开(公告)日：2015-02-17

申请号：US13678243

申请日：2012-11-15

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: H01L21/30 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/677 ,  H01L21/687 ,  H01L21/02 ,  H01L21/311

CPC classification number: C23C14/50 ,  C23C16/06 ,  C23C16/50 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/02299 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/67757 ,  H01L21/6875

Abstract: Disclosed are systems and methods for improving front-side process uniformity by back-side metallization. In some implementations, a metal layer can be formed on the back side of a semiconductor wafer prior to certain process steps such as plasma-based processes. Presence of such a back-side metal layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based processes. Such reduction in thickness variations can result from reduced variation in radio-frequency (RF) coupling during the plasma-based processes. Various examples of wafer types, back-side metal layer configurations, and plasma-based processes are disclosed.

Abstract translation: 公开了通过背面金属化改善前侧工艺均匀性的系统和方法。 在一些实施方案中，在诸如基于等离子体的工艺之类的某些工艺步骤之前，可以在半导体晶片的背面上形成金属层。 这种背面金属层的存在降低了例如由基于等离子体的工艺产生的沉积和/或蚀刻层的厚度的变化。 厚度变化的这种减小可以由等离子体工艺过程中射频（RF）耦合的变化减小。 公开了晶片类型，背面金属层构造和基于等离子体的工艺的各种示例。

公开(公告)号：US20170243739A1

公开(公告)日：2017-08-24

申请号：US15440223

申请日：2017-02-23

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Bradley Paul Barber ,  Kezia Cheng

IPC: H01L21/027 ,  H01L21/52 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L25/50 ,  H01L21/56 ,  H01L21/6835 ,  H01L23/315 ,  H01L2221/68318 ,  H01L2221/68381 ,  H03H3/0072 ,  H03H3/02 ,  H03H3/08

Abstract: According to various aspects and embodiments, a system and method for forming a packaged electronic device is disclosed. One example of the method comprises treating a surface of a first substrate to create a first surface having a low bond strength, at least a portion of the first surface defined by at least one three-dimensional structure and a layer of optical masking material, depositing a layer of structure material onto at least a portion of the first surface, bonding a second substrate to at least a portion of the layer of structure material, and separating the first substrate from the second substrate along the first surface.

公开(公告)号：US20160343667A1

公开(公告)日：2016-11-24

申请号：US15224993

申请日：2016-08-01

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: H01L23/532 ,  H01L21/768 ,  H01L27/06 ,  H01L23/528 ,  H01L23/66 ,  H01L21/8252 ,  H01L23/535

CPC classification number: H01L23/53238 ,  H01L21/469 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/8252 ,  H01L23/485 ,  H01L23/4855 ,  H01L23/5283 ,  H01L23/532 ,  H01L23/53223 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0605 ,  H01L29/41 ,  H01L29/452 ,  H01L29/475 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a stack disposed over a compound semiconductor, with the stack including a barrier, a copper (Cu) layer disposed over the barrier, and a first titanium (Ti) layer disposed over the Cu layer. The metalized structure can further include a sputtered titanium tungsten (TiW) layer disposed over the first Ti layer. The barrier can include an assembly of titanium nitride (TiN) and Ti layers. The metalized structure can further include a second Ti layer disposed over the sputtered TiW layer.

Abstract translation: 公开了与半导体的金属化相关的器件和方法。 金属化结构可以包括设置在化合物半导体上的堆叠，堆叠包括阻挡层，设置在阻挡层上的铜（Cu）层和设置在Cu层上的第一钛（Ti）层。 金属化结构还可以包括设置在第一Ti层之上的溅射钛钨（TiW）层。 阻挡层可以包括氮化钛（TiN）和Ti层的组件。 金属化结构还可以包括设置在溅射TiW层上的第二Ti层。

公开(公告)号：US20150129130A1

公开(公告)日：2015-05-14

申请号：US14595024

申请日：2015-01-12

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: C23C14/50 ,  H01L21/67 ,  C23C16/06 ,  C23C16/50 ,  C23C16/505

CPC classification number: C23C14/50 ,  C23C16/06 ,  C23C16/50 ,  C23C16/505 ,  H01L21/0217 ,  H01L21/02299 ,  H01L21/30 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/6715 ,  H01L21/67757 ,  H01L21/6875

Abstract: Systems to improve front-side process uniformity by back-side metallization are disclosed. In some implementations, a back-side process system deposits a metal layer on the back-side of a wafer prior to performing a plasma-based process on the front side of the wafer. Presence of the back-side metal layer reduces variations in, for example, thickness of a deposited and/or etched layer resulting from the plasma-based process.

Abstract translation: 公开了通过背面金属化改善前侧工艺均匀性的系统。 在一些实施方案中，背面处理系统在晶片正面进行基于等离子体的处理之前，在晶片背面沉积金属层。 背面金属层的存在降低了例如由基于等离子体的工艺产生的沉积和/或蚀刻层的厚度的变化。

公开(公告)号：US08878362B2

公开(公告)日：2014-11-04

申请号：US13774421

申请日：2013-02-22

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/532 ,  H01L21/768 ,  H01L23/485

CPC classification number: H01L23/53238 ,  H01L21/469 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/8252 ,  H01L23/485 ,  H01L23/4855 ,  H01L23/5283 ,  H01L23/532 ,  H01L23/53223 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0605 ,  H01L29/41 ,  H01L29/452 ,  H01L29/475 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a first titanium (Ti) layer disposed over a compound semiconductor, a first titanium nitride (TiN) layer disposed over the first Ti layer, and a copper (Cu) layer disposed over the first TiN layer. The first Ti layer and the first TiN layer can be configured as a barrier between the Cu layer and the compound semiconductor. The metalized structure can further include a second TiN layer disposed over the Cu layer and a first platinum (Pt) layer disposed over the second TiN layer.

Abstract translation: 公开了与半导体的金属化相关的器件和方法。 金属化结构可以包括设置在化合物半导体上的第一钛（Ti）层，设置在第一Ti层上的第一氮化钛（TiN）层和设置在第一TiN层上的铜（Cu）层。 第一Ti层和第一TiN层可以被配置为Cu层和化合物半导体之间的阻挡层。 金属化结构还可以包括设置在Cu层上的第二TiN层和设置在第二TiN层上的第一铂（Pt）层。

公开(公告)号：US20130234333A1

公开(公告)日：2013-09-12

申请号：US13774421

申请日：2013-02-22

Applicant: SKYWORKS SOLUTIONS, INC.

Inventor： Kezia Cheng

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/469 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/8252 ,  H01L23/485 ,  H01L23/4855 ,  H01L23/5283 ,  H01L23/532 ,  H01L23/53223 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0605 ,  H01L29/41 ,  H01L29/452 ,  H01L29/475 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a first titanium (Ti) layer disposed over a compound semiconductor, a first titanium nitride (TiN) layer disposed over the first Ti layer, and a copper (Cu) layer disposed over the first TiN layer. The first Ti layer and the first TiN layer can be configured as a barrier between the Cu layer and the compound semiconductor. The metalized structure can further include a second TiN layer disposed over the Cu layer and a first platinum (Pt) layer disposed over the second TiN layer.

Abstract translation: 公开了与半导体的金属化相关的器件和方法。 金属化结构可以包括设置在化合物半导体上的第一钛（Ti）层，设置在第一Ti层上的第一氮化钛（TiN）层和设置在第一TiN层上的铜（Cu）层。 第一Ti层和第一TiN层可以被配置为Cu层和化合物半导体之间的阻挡层。 金属化结构还可以包括设置在Cu层上的第二TiN层和设置在第二TiN层上的第一铂（Pt）层。

公开(公告)号：US20130221528A1

公开(公告)日：2013-08-29

申请号：US13774988

申请日：2013-02-22

Applicant: Skyworks Solutions, Inc.

Inventor： Kezia Cheng

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/469 ,  H01L21/768 ,  H01L21/76816 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76847 ,  H01L21/76852 ,  H01L21/76895 ,  H01L21/8252 ,  H01L23/485 ,  H01L23/4855 ,  H01L23/5283 ,  H01L23/532 ,  H01L23/53223 ,  H01L23/535 ,  H01L23/66 ,  H01L24/05 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0605 ,  H01L29/41 ,  H01L29/452 ,  H01L29/475 ,  H01L2223/6677 ,  H01L2224/04042 ,  H01L2224/05666 ,  H01L2224/48463 ,  H01L2224/4911 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13063 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

Abstract: Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a stack disposed over a compound semiconductor, with the stack including a barrier, a copper (Cu) layer disposed over the barrier, and a first titanium (Ti) layer disposed over the Cu layer. The metalized structure can further include a sputtered titanium tungsten (TiW) layer disposed over the first Ti layer. The barrier can include an assembly of titanium nitride (TiN) and Ti layers. The metalized structure can further include a second Ti layer disposed over the sputtered TiW layer.

Abstract translation: 公开了与半导体的金属化相关的器件和方法。 金属化结构可以包括设置在化合物半导体上的堆叠，堆叠包括阻挡层，设置在阻挡层上的铜（Cu）层和设置在Cu层上的第一钛（Ti）层。 金属化结构还可以包括设置在第一Ti层之上的溅射钛钨（TiW）层。 阻挡层可以包括氮化钛（TiN）和Ti层的组件。 金属化结构还可以包括设置在溅射TiW层上的第二Ti层。