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    OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS
    13.
    发明申请
    OPTICAL DEVICE STRUCTURE USING GaN SUBSTRATES FOR LASER APPLICATIONS 有权
    使用GaN衬底激光应用的光学器件结构

    公开(公告)号：US20160006217A1

    公开(公告)日：2016-01-07

    申请号：US14736939

    申请日：2015-06-11

    Applicant: Soraa Laser Diode, Inc.

    Inventor： James W. Raring ,  Daniel F. Feezell ,  Nicholas J. Pfister ,  Rajat Sharma ,  Mathew C. Schmidt ,  Christiane Poblenz Elsass ,  Yu-Chia Chang

    IPC: H01S5/22 ,  H01S5/20 ,  H01S5/32 ,  H01S5/343 ,  H01S5/02 ,  H01S5/028

    CPC classification number: H01S5/2201 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01S5/0202 ,  H01S5/028 ,  H01S5/0287 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/34333

    Abstract: An optical device includes a gallium nitride substrate member having an m-plane nonpolar crystalline surface region characterized by an orientation of about −1 degree towards (000-1) and less than about +/−0.3 degrees towards (11-20). The device also has a laser stripe region formed overlying a portion of the m-plane nonpolar crystalline orientation surface region. In a preferred embodiment, the laser stripe region is characterized by a cavity orientation that is substantially parallel to the c-direction, the laser stripe region having a first end and a second end. The device includes a first cleaved c-face facet, which is coated, provided on the first end of the laser stripe region. The device also has a second cleaved c-face facet, which is exposed, provided on the second end of the laser stripe region.

    Abstract translation: 光学器件包括具有m面非极性晶体表面区域的氮化镓衬底构件，其特征在于朝向（000-1）约为-1度且朝向（11-20）小于约+/- 0.3度。 该器件还具有覆盖在m面非极性晶体取向表面区域的一部分上的激光条纹区域。 在优选实施例中，激光条纹区域的特征在于基本上平行于c方向的空腔取向，激光条纹区域具有第一端和第二端。 该装置包括被设置在激光条区域的第一端上的第一切割的c面小面。 该装置还具有暴露于激光条区域的第二端上的第二切割的c面刻面。

    Gallium nitride containing laser device configured on a patterned substrate
    19.
    发明授权
    Gallium nitride containing laser device configured on a patterned substrate 有权
    配置在图案化基板上的含氮化镓激光器件

    公开(公告)号：US09166372B1

    公开(公告)日：2015-10-20

    申请号：US14317846

    申请日：2014-06-27

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass ,  Thiago P. Melo ,  Mathew C. Schmidt

    IPC: H01S5/02 ,  H01S5/22 ,  H01S5/343 ,  H01S5/227 ,  H01L21/02 ,  H01S5/32

    CPC classification number: H01S5/34333 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01S5/0425 ,  H01S5/1082 ,  H01S5/2201 ,  H01S5/2275 ,  H01S5/3063 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

    Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.

    Abstract translation: 含镓和氮的激光二极管器件。 该器件具有包含表面区域的含镓和氮的衬底材料。 表面区域配置在非极性晶体取向或半极性晶体取向上。 该器件具有形成在衬底材料的第二区域内的凹陷区域，第二区域位于第一区域和第三区域之间。 凹陷区域被配置为阻挡多个缺陷从第一区域迁移到第三区域。 该器件具有形成在第三区域上的外延形成的含镓和氮的区域。 外延形成的含镓和氮的区域基本上没有从第一区域迁移的缺陷和形成在第三区域上的有源区域。

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