公开(公告)号：US20180040574A1

公开(公告)日：2018-02-08

申请号：US15789362

申请日：2017-10-20

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre Sarafianos ,  Mathieu Lisart ,  Jimmy Fort

IPC: H01L23/00 ,  H01L21/762

CPC classification number: H01L23/576 ,  H01L21/762 ,  H01L27/088

Abstract: An electronic chip including: a plurality of first semiconductor bars of a first conductivity type and of second semiconductor bars of a second conductivity type arranged alternately and contiguously on a region of the first conductivity type; two detection contacts arranged at the ends of each second bar; a circuit for detecting the resistance between the detection contacts of each second bar; insulating trenches extending in the second bars down to a first depth between circuit elements; and insulating walls extending across the entire width of each second bar down to a second depth greater than the first depth.

公开(公告)号：US09379066B2

公开(公告)日：2016-06-28

申请号：US14686908

申请日：2015-04-15

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Julien Mercier ,  Jimmy Fort ,  Alexandre Sarafianos

IPC: H01L29/76 ,  H01L23/00 ,  H01L27/06 ,  H01L27/092 ,  H01L29/732

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

公开(公告)号：US09298202B2

公开(公告)日：2016-03-29

申请号：US14616481

申请日：2015-02-06

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Jimmy Fort ,  Thierry Soude

IPC: G05F1/625 ,  G05F3/30

CPC classification number: G05F1/625 ,  G05F3/30

Abstract: An adjustable bandgap reference voltage includes a first circuit for generating IPTAT, a second circuit for generating ICTAT, and an output module configured to generate the reference voltage. The first circuit includes a first amplifier connected to terminals of a core for equalizing voltages across the terminals, where the first amplifier has a first stage that is biased by the current inversely proportional to absolute temperature and is arranged according to a folded setup with first PMOS transistors arranged according to a common-gate setup. The first circuit also includes a feedback stage with an input connected to the first amplifier output. The feedback stage output is connected to the first stage input and to a terminal of the core. The second circuit includes a follower amplifier connected to a terminal of the core and separated from the first amplifier and the output module is connected to the feedback stage.

公开(公告)号：US20150048459A1

公开(公告)日：2015-02-19

申请号：US14531025

申请日：2014-11-03

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jimmy Fort ,  Alexandre Sarafianos ,  Julien Mercier

IPC: H01L23/00 ,  H01L29/732 ,  H01L27/092 ,  H01L27/06

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack made on an integrated circuit chip comprises a bipolar transistor of a first type formed in a semiconductor substrate, that bipolar transistor comprising a parasitic bipolar transistor of a second type. A buried region, forming the base of the parasitic bipolar transistor, operates as a detector of the variations in current flowing caused by impingement of laser light on the substrate.

Abstract translation: 用于检测在集成电路芯片上进行的激光攻击的装置包括形成在半导体衬底中的第一类型的双极晶体管，该双极晶体管包括第二类型的寄生双极晶体管。 形成寄生双极晶体管的基极的掩埋区域作为由激光照射在衬底上引起的电流变化的检测器。

公开(公告)号：US20130241649A1

公开(公告)日：2013-09-19

申请号：US13827044

申请日：2013-03-14

Applicant: STMICROELECTRONICS (ROUSSET) SAS

Inventor： Jimmy Fort ,  Thierry Soude

IPC: H03F3/45

CPC classification number: G05F1/575 ,  H03F3/45179

Abstract: The regulator with a low dropout voltage comprises an error amplifier comprising a differential pair of input transistors and a circuit with folded cascode structure connected to the output of the said differential pair, an output stage connected to the output node of the error amplifier, and a Miller compensation capacitor connected between the output stage and the cascode node on the output side (XP) of the cascode circuit; the error amplifier furthermore comprises at least one inverting amplifier module in a feedback loop between the said cascode node and the gate of the cascode transistor of the cascode circuit connected between the said cascode node and the said output node.

Abstract translation: 具有低压降电压的调节器包括误差放大器，该误差放大器包括差分输入晶体管对和连接到所述差分对的输出的折叠共源共栅结构的电路，连接到误差放大器的输出节点的输出级，以及 米勒补偿电容连接在共源共栅电路的输出侧（XP）的输出级与共源共栅节点之间; 误差放大器还包括在所述共源共栅节点和连接在所述共源共栅节点和所述输出节点之间的共源共栅电路的共源共栅晶体管的栅极之间的反馈回路中的至少一个反相放大器模块。

公开(公告)号：US20130200371A1

公开(公告)日：2013-08-08

申请号：US13751549

申请日：2013-01-28

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Fabrice Marinet ,  Jimmy Fort ,  Alexandre Sarafianos ,  Julien Mercier

IPC: H01L23/00

CPC classification number: H01L23/576 ,  G09C1/00 ,  H01L23/57 ,  H01L27/0635 ,  H01L27/0658 ,  H01L27/092 ,  H01L29/7322 ,  H01L2924/0002 ,  H04L9/004 ,  H04L2209/12 ,  H01L2924/00

Abstract: A device for detecting a laser attack in an integrated circuit chip formed in the upper P-type portion of a semiconductor substrate incorporating an NPN bipolar transistor having an N-type buried layer, including a detector of the variations of the current flowing between the base of said NPN bipolar transistor and the substrate.

Abstract translation: 一种用于检测形成在具有N型掩埋层的NPN双极晶体管的半导体衬底的上部P型部分中形成的集成电路芯片中的激光攻击的装置，包括：检测器， 的NPN双极晶体管和衬底。

公开(公告)号：US11838024B2

公开(公告)日：2023-12-05

申请号：US17119865

申请日：2020-12-11

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre Tramoni ,  Jimmy Fort

IPC: H03K3/0233 ,  G06F1/3287 ,  H03K17/687

CPC classification number: H03K3/02337 ,  G06F1/3287 ,  H03K17/687

Abstract: An embodiment provides a circuit of cyclic activation of an electronic function including a hysteresis comparator controlling the charge of a capacitive element powering the function.

公开(公告)号：US11804842B2

公开(公告)日：2023-10-31

申请号：US17846362

申请日：2022-06-22

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Borrel ,  Jimmy Fort ,  Mathieu Lisart

IPC: H03K5/22 ,  H03K19/003 ,  H03F3/45 ,  H03K19/00 ,  H03K19/17736 ,  H03L7/097 ,  H04L9/32

CPC classification number: H03K19/00384 ,  H03F3/45273 ,  H03F3/45488 ,  H03K19/0027 ,  H03K19/17744 ,  H03L7/097 ,  H04L9/3278 ,  H04L2209/12

Abstract: A physically unclonable function device includes a set of diode-connected MOS transistors having a random distribution of respective threshold voltages. A first circuit is configured to impose, on each first transistor, a fixed respective gate voltage regardless of the value of a current flowing in this first transistor. A second circuit is configured to impose, on each second transistor, a fixed respective gate voltage regardless of the value of a current flowing in this second transistor. A current mirror stage is coupled between the first circuit and the second circuit and is configured to deliver the reference current from a sum of the currents flowing in the first transistors. A comparator is configured to deliver a signal whose level depends on a comparison between a first current obtained from a reference current based on the first transistors and a second current of the second transistors.

公开(公告)号：US20220066494A1

公开(公告)日：2022-03-03

申请号：US17399617

申请日：2021-08-11

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Nicolas Demange ,  Nicolas Borrel ,  Jimmy Fort

IPC: G05F3/26 ,  G06F21/75

Abstract: An embodiment electronic circuit power supply device is configured to: flow, through a first conductor connected to a node, a first current that is an image of a second current consumed by the electronic circuit; flow a third current through a second conductor connected to the node; regulate a potential of the node to a constant value by acting on the third current; flow a fourth constant current through a third conductor connected to the node; and consume a fifth current that is an image of the third current.

公开(公告)号：US20210099162A1

公开(公告)日：2021-04-01

申请号：US17119865

申请日：2020-12-11

Applicant: STMicroelectronics (Rousset) SAS

Inventor： Alexandre Tramoni ,  Jimmy Fort

IPC: H03K4/50

Abstract: An embodiment provides a circuit of cyclic activation of an electronic function including a hysteresis comparator controlling the charge of a capacitive element powering the function.