公开(公告)号：US20200216757A1

公开(公告)日：2020-07-09

申请号：US16734789

申请日：2020-01-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changsu JEON ,  Jungmin OH ,  Hyosan LEE ,  Hoon HAN ,  Jinkyu ROH ,  Hyojoong YOON ,  Dongwun SHIN

IPC: C09K13/00 ,  H01L21/02 ,  H01L21/311

Abstract: A silicon layer etchant composition and associated methods, the composition including about 1 wt % to about 20 wt % of an alkylammonium hydroxide; about 1 wt % to about 30 wt % of an amine compound; about 0.01 wt % to about 0.2 wt % of a nonionic surfactant including both a hydrophobic group and a hydrophilic group; and water, all wt % being based on a total weight of the silicon layer etchant composition.

公开(公告)号：US20200208052A1

公开(公告)日：2020-07-02

申请号：US16728276

申请日：2019-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kihun SONG ,  Jungmin OH ,  Hyosan LEE ,  Daehyuk CHUNG ,  Minjung KIM ,  Hyojoong YOON

IPC: C09K13/06 ,  H01L21/311

Abstract: An etchant composition for etching a metal film and a method of forming a pattern, the etchant composition including an acid etching agent, the acid etching agent including an inorganic acid or an organic acid; an auxiliary oxidant, the auxiliary oxidant including hydrogen peroxide or an amine oxide compound; and an organic solvent, the organic solvent including a compound having an unshared electron pair, and having a dielectric constant of about 17 to about 80.

公开(公告)号：US20180096856A1

公开(公告)日：2018-04-05

申请号：US15833184

申请日：2017-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan KIM ,  Ingi KIM ,  Mihyun PARK ,  Young-Hoo KIM ,  Ui-soon PARK ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

公开(公告)号：US20170069485A1

公开(公告)日：2017-03-09

申请号：US15176972

申请日：2016-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon JEONG ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02057 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/02101 ,  H01L21/31111 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/67276

Abstract: In embodiment, the method includes cleaning a preceding substrate, and drying the preceding substrate and cleaning a next substrate. Drying the preceding substrate and cleaning the next substrate include determining a cleaning start time of the next substrate, and the cleaning start time corresponds to a desired time point after starting drying the preceding substrate.

Abstract translation: 在实施例中，该方法包括清洗前面的衬底，干燥前面的衬底并清洁下一个衬底。 干燥前面的衬底并清洁下一个衬底包括确定下一个衬底的清洁开始时间，并且清洁开始时间对应于在开始干燥前面的衬底之后的期望时间点。

公开(公告)号：US20160368030A1

公开(公告)日：2016-12-22

申请号：US15142298

申请日：2016-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingi KIM ,  Kyoung Hwan KIM ,  SeokHoon KIM ,  Sang Won BAE ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: B08B3/10 ,  B01F15/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/02 ,  B08B3/08 ,  B08B3/02

CPC classification number: H01L22/26 ,  B01F3/088 ,  B01F15/0022 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051

Abstract: Disclosed is a substrate processing system including a nozzle to supply a chemical solution containing a mixture of first and second solutions onto a substrate loaded on a supporter of a process chamber, a chemical solution supplying system to supply the chemical solution to the nozzle, and a controller to control the chemical solution supplying system. The chemical solution supplying system may include a mixing tank mixing a plurality of chemicals to produce the first solution, a supply tank receiving the first solution from the mixing tank and producing the chemical solution, a connection line to connect the mixing tank to the supply tank, and a valve and a pump on the connection line. The pump is controlled to allow the first solution to be supplied into the supply tank at a predetermined supply amount per stroke.

Abstract translation: 公开了一种基板处理系统，其包括：喷嘴，其将含有第一和第二溶液的混合物的化学溶液供应到负载在处理室的支撑体上的基板上;将化学溶液供给到喷嘴的化学溶液供给系统;以及 控制器控制化学溶液供应系统。 化学溶液供给系统可以包括混合多种化学品以制备第一溶液的混合罐，从混合罐接收第一溶液并产生化学溶液的供应罐，将混合罐连接到供应罐的连接管线 ，以及连接线上的阀和泵。 控制泵以允许第一溶液以每冲程以预定的供给量供应到供应罐中。

公开(公告)号：US20160032185A1

公开(公告)日：2016-02-04

申请号：US14879835

申请日：2015-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: C09K13/06 ,  C23F1/26

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20240059967A1

公开(公告)日：2024-02-22

申请号：US18227454

申请日：2023-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Daihyun KIM ,  Taesoo KWON ,  Yeonsoek YOO ,  Mihyun PARK ,  Sangwon BAE ,  Hyosan LEE ,  Wook JANG

IPC: C09K13/06 ,  H01L29/66

CPC classification number: C09K13/06 ,  H01L29/66795

Abstract: An etching composition for etching a titanium aluminum nitride layer and a method of manufacturing an integrated circuit, the etching composition includes about 15 wt % to about 30 wt % of an oxidizing agent; about 1 wt % to about 10 wt % of a pH adjusting agent, the pH adjusting agent including an inorganic acid or an organic acid; about 0.001 wt % to about 1 wt % of an etching booster; and a solvent, all wt % being based on a total weight of the etching composition.

公开(公告)号：US20210254224A1

公开(公告)日：2021-08-19

申请号：US17313534

申请日：2021-05-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungah KIM ,  Mihyun PARK ,  Jinwoo LEE ,  Keonyoung KIM ,  Hyosan LEE ,  Hoon HAN ,  Jin Uk LEE ,  Jung Hun LIM

IPC: C23F1/26 ,  C23F1/30 ,  H01L21/311 ,  H01L21/306

Abstract: A method of etching a metal barrier layer and a metal layer is provided. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.

公开(公告)号：US20210238478A1

公开(公告)日：2021-08-05

申请号：US17032306

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Sung LEE ,  Jung Hun LIM ,  Mihyun PARK ,  Changsu JEON ,  Jung-Min OH ,  Subin OH ,  Hyosan LEE

IPC: C09K13/06 ,  H01L21/3213 ,  H01L21/28

Abstract: An etching composition and a method of manufacturing a semiconductor device, the composition including 5 wt % to 30 wt % of an oxidizing agent, based on a total weight of the etching composition; a salt including an anion including a carboxylate moiety having 1 to 5 carbon atoms, and an ammonium cation; and a chelating agent including a phosphonic acid having 1 to 8 carbon atoms.

公开(公告)号：US20200087798A1

公开(公告)日：2020-03-19

申请号：US16574372

申请日：2019-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SOULBRAIN CO., LTD.

Inventor： Jungah KIM ,  Mihyun PARK ,  Jinwoo LEE ,  Keonyoung KIM ,  Hyosan LEE ,  Hoon HAN ,  Jin Uk LEE ,  Jung Hun LIM

IPC: C23F1/26 ,  H01L21/306 ,  H01L21/311 ,  C23F1/30

Abstract: Disclosed is a method of etching a metal barrier layer and a metal layer. The method includes forming the metal barrier layer and the metal layer on a substrate, and using an etching composition to etch the metal barrier layer and the metal layer. The etching composition may include an oxidant selected from nitric acid, bromic acid, iodic acid, perchloric acid, perbromic acid, periodic acid, sulfuric acid, methane sulfonic acid, p-toluenesulfonic acid, benzenesulfonic acid, or a combination thereof, a metal etching inhibitor including a compound expressed by Chemical Formula 1, and a metal oxide solubilizer selected from phosphoric acid, phosphate, carboxylic acid having 3 to 20 carbon atoms, or a combination thereof.