Electronic device including multi processor and method for operating the same

    公开(公告)号:US12135994B2

    公开(公告)日:2024-11-05

    申请号:US17561213

    申请日:2021-12-23

    Abstract: An electronic device includes at least one processor including a first processor and a second processor separate from the first processor, a memory electrically connected to the at least one processor and storing instructions, wherein the at least one processor is further configure to execute the instructions to assign foreground tasks to a boosting foreground control group and a non-boosting foreground control group in response to a user input, based on completion of booting of the electronic device, schedule at least one task assigned to the boosting foreground control group for the first processor, and schedule at least one task assigned to the non-boosting foreground control group for the second processor, and performance of the second processor may be lower than performance of the first processor.

    Image sensor
    15.
    发明授权

    公开(公告)号:US11222918B1

    公开(公告)日:2022-01-11

    申请号:US17320873

    申请日:2021-05-14

    Abstract: An image sensor comprising a substrate including an upper surface and a lower surface opposite each other and extending in a first direction and a second direction, a first isolation region in the substrate and apart from the upper surface in a third direction perpendicular to the first direction and second direction, the first isolation region defining a boundary of a photoelectric conversion region, a second isolation region in the substrate and extending in the third direction from the lower surface to the first isolation region, a plurality of transistors on the upper surface in the photoelectric conversion region, and a photoelectric conversion device in the substrate in the photoelectric conversion region. The first isolation region includes a potential well doped with an impurity of a first conductivity type, and the second isolation region includes an insulating material layer.

    Electronic device and image acquisition method thereof

    公开(公告)号:US11082612B2

    公开(公告)日:2021-08-03

    申请号:US16763261

    申请日:2018-11-29

    Abstract: An electronic device according to various embodiments of the present invention comprises a processor and an image sensor module electrically connected to the processor, wherein: the image sensor module comprises an image sensor and a control circuit, which is electrically connected to the image sensor and is connected to the processor by an interface; the control circuit is set so as not to compress at least one image acquired from the image sensor according to a first readout speed, but to transmit the same to the processor, and to compress at least one image acquired from the image sensor according to a second readout speed that is faster than the first readout speed and to transmit the same to the processor; and the processor can be set so as to acquire a first image set by using the image sensor according to a predetermined readout speed, compare at least two images included in the first image set, set, as either the first readout speed or the second readout speed, the readout speed corresponding to the image sensor on the basis of the result of the comparison of the at least two images included in the first image set, and acquire a second image set according to either the set first readout speed or second readout speed, by using the image sensor. Additional various embodiments are possible.

    Image sensor
    17.
    发明授权

    公开(公告)号:US10347684B2

    公开(公告)日:2019-07-09

    申请号:US15848733

    申请日:2017-12-20

    Abstract: An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.

    Methods of forming patterns
    18.
    发明授权
    Methods of forming patterns 有权
    形成图案的方法

    公开(公告)号:US09324563B2

    公开(公告)日:2016-04-26

    申请号:US14299252

    申请日:2014-06-09

    Abstract: Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the photoresist layer to light to transform the second portion into a second photoresist pattern disposed between the two first photoresist patterns. The method may also removing portions of the photoresist layer to leave the two first photoresist patterns and the second photo resist pattern on the etch-target layer such that the etch-target layer is exposed.

    Abstract translation: 提供了形成图案的方法。 所述方法可以包括在衬底上顺序形成蚀刻目标层和光致抗蚀剂层,将光致抗蚀剂层的两个第一部分暴露于光以将两个第一部分转变成两个第一光致抗蚀剂图案,并将光致抗蚀剂层的第二部分暴露于 光以将第二部分变换成设置在两个第一光致抗蚀剂图案之间的第二光致抗蚀剂图案。 该方法还可以去除光致抗蚀剂层的部分,以使蚀刻目标层上的两个第一光致抗蚀剂图案和第二光致抗蚀剂图案露出。

    METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE
    19.
    发明申请
    METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20150227046A1

    公开(公告)日:2015-08-13

    申请号:US14620289

    申请日:2015-02-12

    Abstract: The inventive concepts provide methods of forming a semiconductor device. The method includes forming a neutral layer having a photosensitive property and a reflow property on an anti-reflective coating layer, performing an exposure process and a development process on the neutral layer to form a preliminary neutral pattern at least partially exposing the anti-reflective coating layer, heating the preliminary neutral pattern to form a neutral pattern, forming a block copolymer layer on the neutral pattern, and heating the block copolymer layer to form a block copolymer pattern. The block copolymer pattern includes a first pattern disposed on the anti-reflective coating layer exposed by the neutral pattern, and a second pattern disposed on the neutral pattern and chemically bonded to the first pattern.

    Abstract translation: 本发明构思提供了形成半导体器件的方法。 该方法包括在抗反射涂层上形成具有感光性能和回流性能的中性层,对中性层进行曝光处理和显影处理,以形成初步中性图案,至少部分地使抗反射涂层曝光 加热初步中性图案以形成中性图案,在中性图案上形成嵌段共聚物层,并加热嵌段共聚物层以形成嵌段共聚物图案。 嵌段共聚物图案包括设置在由中性图案暴露的抗反射涂层上的第一图案和设置在中性图案上并化学键合到第一图案的第二图案。

    METHODS OF FORMING PATTERNS
    20.
    发明申请
    METHODS OF FORMING PATTERNS 有权
    形成图案的方法

    公开(公告)号:US20150017807A1

    公开(公告)日:2015-01-15

    申请号:US14299252

    申请日:2014-06-09

    Abstract: Methods of forming patterns are provided. The methods may include sequentially forming an etch-target layer and a photoresist layer on a substrate, exposing two first portions of the photoresist layer to light to transform the two first portions into two first photoresist patterns and exposing a second portion of the photoresist layer to light to transform the second portion into a second photoresist pattern disposed between the two first photoresist patterns. The method may also removing portions of the photoresist layer to leave the two first photoresist patterns and the second photo resist pattern on the etch-target layer such that the etch-target layer is exposed.

    Abstract translation: 提供了形成图案的方法。 所述方法可以包括在衬底上顺序形成蚀刻目标层和光致抗蚀剂层,将光致抗蚀剂层的两个第一部分暴露于光以将两个第一部分转变成两个第一光致抗蚀剂图案,并将光致抗蚀剂层的第二部分暴露于 光以将第二部分变换成设置在两个第一光致抗蚀剂图案之间的第二光致抗蚀剂图案。 该方法还可以去除光致抗蚀剂层的部分,以使蚀刻目标层上的两个第一光致抗蚀剂图案和第二光致抗蚀剂图案露出。

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