公开(公告)号：US11610788B2

公开(公告)日：2023-03-21

申请号：US17217417

申请日：2021-03-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/67 ,  H01L21/02

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

公开(公告)号：US10991600B2

公开(公告)日：2021-04-27

申请号：US15848481

申请日：2017-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Jung-Min Oh ,  Kuntack Lee ,  Hyosan Lee

IPC: H01L21/67 ,  H01L21/02

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

公开(公告)号：US20150348799A1

公开(公告)日：2015-12-03

申请号：US14824786

申请日：2015-08-12

Applicant: Samsung Electronics Co., Ltd. ,  Soulbrain Co., Ltd.

Inventor： Young Taek Hong ,  Jinuk Lee ,  Junghun Lim ,  Jaewan Park ,  Chanjin Jeong ,  Hoon Han ,  Seonghwan Park ,  Yanghwa Lee ,  Sang Won Bae ,  Daehong Eom ,  Byoungmoon Yoon ,  Jihoon Jeong ,  Kyunghyun Kim ,  Kyounghwan Kim ,  ChangSup Mun ,  Se-Ho Cha ,  Yongsun Ko

IPC: H01L21/311 ,  H01L27/115 ,  H01L29/66 ,  C09K13/06

CPC classification number: H01L29/7926 ,  C09K13/04 ,  C09K13/06 ,  C23F1/16 ,  H01L21/31111 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7889

Abstract: Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

Abstract translation: 提供蚀刻组合物。 蚀刻组合物包括磷酸，铵离子和硅化合物材料。 硅化合物材料包括硅原子，选自氮原子，磷原子和与硅原子结合的硫原子中的至少一种，以及与硅原子结合的至少两个氧原子。 还提供了利用蚀刻组合物的方法。

公开(公告)号：US12216408B2

公开(公告)日：2025-02-04

申请号：US17673978

申请日：2022-02-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Jihoon Jeong ,  Younghoo Kim ,  Kuntack Lee

IPC: G03F7/16

Abstract: An apparatus for drying a wafer, includes: a drying chamber; a supercritical fluid supply module configured to supply supercritical fluid to the drying chamber; a main exhaust line connected to the drying chamber and in which a main valve is installed; and an auxiliary exhaust unit connected to the main exhaust line. The auxiliary exhaust unit includes: an auxiliary exhaust line connected to the main exhaust line and configured to exhaust the supercritical fluid from the drying chamber when the main valve is closed; a negative pressure tank installed in the auxiliary exhaust line; a first valve, installed in the auxiliary exhaust line, that is configured to be opened when the main valve is closed; and a second valve, installed in the auxiliary exhaust line, that is configured to be opened in conjunction with the first valve.

公开(公告)号：US11527399B2

公开(公告)日：2022-12-13

申请号：US16744667

申请日：2020-01-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byungkwon Cho ,  Sangjine Park ,  Yongsun Ko ,  Seulgee Jeon ,  Jihoon Jeong ,  Seongsik Hong

IPC: H01L21/02 ,  B08B7/00 ,  H01L21/67

Abstract: Provided are a wafer cleaning apparatus based on light irradiation capable of effectively cleaning residue on a wafer without damaging the wafer, and a wafer cleaning system including the cleaning apparatus. The wafer cleaning apparatus is configured to clean residue on the wafer by light irradiation and includes: a light irradiation unit configured to irradiate light onto the wafer during the light irradiation; a wafer processing unit configured accommodate the wafer and to control a position of the wafer such that the light is irradiated onto the wafer during the light irradiation; and a cooling unit configured to cool the wafer after the light irradiation has been completed. The light irradiation unit, the wafer processing unit, and the cooling unit are sequentially arranged in a vertical structure with the light irradiation unit above the wafer processing unit and the wafer processing unit above the cooling unit.

公开(公告)号：US20220326617A1

公开(公告)日：2022-10-13

申请号：US17488456

申请日：2021-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjine Park ,  Jihoon Jeong ,  Younghoo Kim ,  Kuntack Lee

IPC: G03F7/38 ,  H01L21/02 ,  H01L21/687

Abstract: A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second temperature lower than the first temperature onto the substrate, thereby replacing a residue of the first developer remaining after the development process with a second developer, transferring the substrate from the development device to a supercritical drying device, and supplying, by the supercritical drying device, at least one of a supercritical fluid and a subcritical fluid onto the substrate, thereby drying the second developer.

公开(公告)号：US11302526B2

公开(公告)日：2022-04-12

申请号：US16561078

申请日：2019-09-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Byung-Kwon Cho ,  Jihoon Jeong ,  Youngtak Kim ,  Yongsun Ko ,  Seulgee Jeon

IPC: H01L21/02 ,  H01L21/67

Abstract: A supercritical drying apparatus and a method of drying a substrate, the apparatus including a drying chamber configured to receive a supercritical fluid and to dry a substrate; a chuck in the drying chamber, the chuck being configured to receive the substrate; and a particle remover in the drying chamber, the particle remover being configured to remove dry particles from the substrate by heating the substrate with radiant heat.

公开(公告)号：US20220075268A1

公开(公告)日：2022-03-10

申请号：US17466101

申请日：2021-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon Jeong ,  Seohyun Kim ,  Sukhoon Kim ,  Younghoo Kim ,  Sangjine Park ,  Kuntack Lee

IPC: G03F7/16 ,  G03F7/20

Abstract: A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

公开(公告)号：US10825698B2

公开(公告)日：2020-11-03

申请号：US15845236

申请日：2017-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Kuntack Lee

IPC: H01L21/67 ,  B08B3/08 ,  H01L21/02 ,  F26B3/00 ,  F26B5/00

Abstract: Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.

公开(公告)号：US20180366348A1

公开(公告)日：2018-12-20

申请号：US15845236

申请日：2017-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Jhin Cho ,  Young-Hoo Kim ,  Jihoon Jeong ,  Yungjun Kim ,  Kuntack Lee

IPC: H01L21/67 ,  B08B3/08 ,  F26B3/00

CPC classification number: H01L21/67034 ,  B08B3/08 ,  B08B2203/007 ,  F26B3/00 ,  F26B5/005 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/6704 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/67173 ,  H01L21/67219 ,  H01L21/67248

Abstract: Disclosed are a substrate drying apparatus, a facility of manufacturing a semiconductor device, and a method of drying a substrate. The substrate drying apparatus includes a chamber that is configured to dry a substrate at a first temperature, a first reservoir that is configured to store a first supercritical fluid at a second temperature that is less than the first temperature, a second reservoir that is configured to store a second supercritical fluid at a third temperature that is greater than the first temperature, and a supply unit connected between the chamber and the first reservoir and/or second reservoir. The supply unit is configured to supply the chamber with the first supercritical fluid and second supercritical fluid.