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公开(公告)号:US20230383218A1
公开(公告)日:2023-11-30
申请号:US18324260
申请日:2023-05-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Byungjoon Kang , Jiwon Kim , Sungmin Kim , Hwang Suk Kim , Jungmin Oh , Hyosan Lee , Byoungki Choi , Cheol Ham , Kyuyoung Hwang
CPC classification number: C11D7/265 , C11D11/0047
Abstract: A cleaning composition for removing residues on surfaces contains a solvent and a cleaning accelerator, but does not contain an oxidant, wherein the cleaning accelerator includes at least one of a salt represented by Formula 1A or a salt represented by Formula 1B. A method of cleaning a metal-containing film includes preparing the cleaning composition, and bring the cleaning composition into contact with a metal-containing film provided on a substrate, the metal-containing film having a surface on which residues are generated. The Formulae 1A and 1B are:
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公开(公告)号:US20230229245A1
公开(公告)日:2023-07-20
申请号:US18126658
申请日:2023-03-27
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hayoung JEON , Jiwon Kim , Minjung Moon , Seoyoung Yoon , Sookkyung Lee , Jiyoon Heo , Won Lee
IPC: G06F3/023 , G06F3/04886
CPC classification number: G06F3/0237 , G06F3/04886
Abstract: An electronic device includes: a display; a memory storing an input pattern comprising a plurality of emojis; and a processor operatively connected to the display and the memory. The processor is configured to: display, in the display, a user interface comprising (i) an input field and (ii) a recommendation field comprising a plurality of recommendation areas; detect a first input that selects a first emoji from the plurality of emojis, the first emoji being displayed in a first recommendation area of the plurality of recommendation areas; output the first emoji to the input field based on the detected first input; and replace an item displayed in the first recommendation area with a second emoji subsequent to the first emoji in the input pattern.
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公开(公告)号:US20220139821A1
公开(公告)日:2022-05-05
申请号:US17376240
申请日:2021-07-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungmin HWANG , Jiwon Kim , Jaeho Ahn , Joonsung Lim , Sukkang Sung
IPC: H01L23/522 , H01L25/065 , H01L25/18 , H01L23/00
Abstract: A semiconductor device includes lower circuit patterns on a lower substrate; lower bonding patterns on the lower circuit patterns, the lower bonding patterns including a conductive material and being electrically connected to the lower circuit patterns; upper bonding patterns on and contacting the lower bonding patterns, and including a conductive material; a passive device on the upper bonding patterns, and including a conductive material and contacting one of the upper bonding patterns; a gate electrode structure on the passive device, and including gate electrodes spaced apart from each other in a first direction, each of which extends in a second direction, and extension lengths in the second direction of the gate electrodes increasing from a lowermost level toward an uppermost level in a stepwise manner; a channel extending through at least a portion of the gate electrode structure; and an upper substrate on the channel.
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公开(公告)号:US11262845B2
公开(公告)日:2022-03-01
申请号:US16759796
申请日:2018-11-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Wonjun Lee , Minkoo Kang , Jiwon Kim , Won Lee , Myojin Bang , Sangwon Shim , Younghak Oh , Sunyoung Yi , Yonggu Lee , Kyuok Choi
IPC: G06F3/01 , H04M1/72454 , G06F3/0481 , G06F3/0488 , G01C21/36
Abstract: Various embodiments of the disclosure provide a method and apparatus for providing a vibration in an electronic device. According to various embodiments of the disclosure, an electronic device may include a memory including instructions stored therein, and at least one processor, wherein the at least one processor coupled to the memory is configured to execute the stored instructions for detecting an event for a user's input related to a direction, identifying a vibration pattern having directivity, in response to the detected event, and providing a vibration having directivity by driving the one or more vibration devices, based on the vibration pattern.
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公开(公告)号:US11024640B2
公开(公告)日:2021-06-01
申请号:US16514557
申请日:2019-07-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung-Min Hwang , Joon-Sung Lim , Jiyoung Kim , Jiwon Kim , Woosung Yang
IPC: H01L27/11578 , H01L27/11573 , H01L27/11568 , H01L27/11551 , H01L27/11519 , H01L27/11521 , H01L27/11526 , H01L27/11565
Abstract: Disclosed are three-dimensional semiconductor memory devices and methods of fabricating the same. A three-dimensional semiconductor memory device including a substrate including a cell array region and a connection region, an electrode structure including a plurality of electrodes and a plurality of dielectric layers alternately stacked on the substrate, the electrode structure having a stepwise portion on the connection region, an etch stop structure on the stepwise portion of the electrode structure, and a plurality of contact plugs on the connection region, the contact plugs penetrating the etch stop structure and connected to corresponding pad portions of the electrodes, respectively, may be provided. The etch stop structure may include an etch stop pattern and a horizontal dielectric layer, which has have a uniform thickness and covers a top surface and a bottom surface of an etch stop pattern.
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公开(公告)号:US10804363B2
公开(公告)日:2020-10-13
申请号:US16445815
申请日:2019-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sung-Min Hwang , Joon-Sung Lim , Jiyoung Kim , Jiwon Kim , Woosung Yang
IPC: H01L29/417 , H01L27/11582 , H01L27/11556
Abstract: Disclosed are three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor memory device comprises a substrate that includes a cell array region and a connection region, an electrode structure that includes a plurality of electrodes and a plurality of dielectric layers alternately stacked on the substrate and has a stepwise structure on the connection region, an etch stop pattern that covers the stepwise structure of the electrode structure. The electrode structure and the etch stop pattern extend in a first direction when viewed in plan. The electrode structure has a first width in a second direction intersecting the first direction. The etch stop pattern has a second width in the second direction. The second width is less than the first direction.
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公开(公告)号:US09532036B2
公开(公告)日:2016-12-27
申请号:US14711193
申请日:2015-05-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jiwon Kim , Dongkyung Nam , Hyoseok Hwang
CPC classification number: H04N13/327 , G06T7/85 , G06T2207/10021 , G06T2207/10024 , H04N13/324 , H04N13/349 , H04N13/398 , H04N2013/0077 , H04N2013/0081
Abstract: An image processing apparatus and a method implemented by the image process apparatus generates a vertical disparity map through regression analysis, based on a difference between vertical coordinate values from feature correspondence information of left and right source images. A geometric difference through image warping is calibrated before depth information is restored through depth estimation. Thus, a process of optimizing a camera model may not have to be performed, and occurrence of black areas that may be caused by image rotation may be reduced.
Abstract translation: 图像处理装置和由图像处理装置实施的方法基于来自左右源图像的特征对应信息的垂直坐标值之间的差异,通过回归分析生成垂直视差图。 在通过深度估计恢复深度信息之前,校正通过图像翘曲的几何差异。 因此,可以不必执行优化相机模型的处理,并且可能减少可能由图像旋转引起的黑色区域的发生。
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公开(公告)号:US20240312937A1
公开(公告)日:2024-09-19
申请号:US18671649
申请日:2024-05-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sung-Min Hwang , Jiwon Kim , Jaeho Ahn , Joon-Sung Lim , Sukkang Sung
IPC: H01L23/00 , G11C16/08 , G11C16/10 , H01L25/00 , H01L25/065 , H01L25/18 , H10B41/27 , H10B41/41 , H10B43/27 , H10B43/40
CPC classification number: H01L24/08 , G11C16/08 , G11C16/10 , H01L24/80 , H01L25/0657 , H01L25/18 , H01L25/50 , H10B41/27 , H10B41/41 , H10B43/27 , H10B43/40 , H01L2224/08135 , H01L2224/80895 , H01L2224/80896 , H01L2924/1431 , H01L2924/14511
Abstract: A semiconductor device and electronic system, the device including a cell structure stacked on a peripheral circuit structure, wherein the cell structure includes a first interlayer dielectric layer and first metal pads exposed at the first interlayer dielectric layer and connected to gate electrode layers and channel regions, the peripheral circuit structure includes a second interlayer dielectric layer and second metal pads exposed at the second interlayer dielectric layer and connected to a transistor, the first metal pads include adjacent first and second sub-pads, the second metal pads include adjacent third and fourth sub-pads, the first and third sub-pads are coupled, and a width of the first sub-pad is greater than that of the third sub-pad, and the second sub-pad and the fourth sub-pad are coupled, and a width of the fourth sub-pad is greater than that of the second sub-pad.
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公开(公告)号:US11715684B2
公开(公告)日:2023-08-01
申请号:US17376240
申请日:2021-07-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sungmin Hwang , Jiwon Kim , Jaeho Ahn , Joonsung Lim , Sukkang Sung
IPC: H01L27/115 , H01L23/31 , H01L23/522 , H01L23/00 , H01L25/065 , H01L25/18 , H10B43/27
CPC classification number: H01L23/5223 , H01L23/5226 , H01L23/5227 , H01L23/5228 , H01L24/20 , H01L24/24 , H01L25/0657 , H01L25/18 , H01L2224/2105 , H01L2224/24146 , H01L2924/1431 , H01L2924/14511 , H10B43/27
Abstract: A semiconductor device includes lower circuit patterns on a lower substrate; lower bonding patterns on the lower circuit patterns, the lower bonding patterns including a conductive material and being electrically connected to the lower circuit patterns; upper bonding patterns on and contacting the lower bonding patterns, and including a conductive material; a passive device on the upper bonding patterns, and including a conductive material and contacting one of the upper bonding patterns; a gate electrode structure on the passive device, and including gate electrodes spaced apart from each other in a first direction, each of which extends in a second direction, and extension lengths in the second direction of the gate electrodes increasing from a lowermost level toward an uppermost level in a stepwise manner; a channel extending through at least a portion of the gate electrode structure; and an upper substrate on the channel.
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公开(公告)号:US11460695B2
公开(公告)日:2022-10-04
申请号:US17091591
申请日:2020-11-06
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kyehoon Lee , Jigwang Kim , Jiwon Kim , Jaemin Soh , Sanghoon Lee , Daesu Choi
IPC: G02B27/01 , G02F1/1335 , G02F1/017
Abstract: A display apparatus includes a light source array in which a plurality of light sources emitting light by a local dimming are arranged, a color conversion layer comprising color conversion particles that convert the emitted light into light of a certain color, and configured to emit white light by using the converted light, a display panel configured to generate an image by using the white light, and a selective transmission member arranged between the light source array and the color conversion layer. The selective transmission member is configured to transmit the light to the color conversion layer, and avoid transmitting the light in the color conversion layer to the light source array.
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