公开(公告)号：US20170069485A1

公开(公告)日：2017-03-09

申请号：US15176972

申请日：2016-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihoon JEONG ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02057 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/02101 ,  H01L21/31111 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/67276

Abstract: In embodiment, the method includes cleaning a preceding substrate, and drying the preceding substrate and cleaning a next substrate. Drying the preceding substrate and cleaning the next substrate include determining a cleaning start time of the next substrate, and the cleaning start time corresponds to a desired time point after starting drying the preceding substrate.

Abstract translation: 在实施例中，该方法包括清洗前面的衬底，干燥前面的衬底并清洁下一个衬底。 干燥前面的衬底并清洁下一个衬底包括确定下一个衬底的清洁开始时间，并且清洁开始时间对应于在开始干燥前面的衬底之后的期望时间点。

公开(公告)号：US20160368030A1

公开(公告)日：2016-12-22

申请号：US15142298

申请日：2016-04-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ingi KIM ,  Kyoung Hwan KIM ,  SeokHoon KIM ,  Sang Won BAE ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: B08B3/10 ,  B01F15/00 ,  H01L21/66 ,  H01L21/67 ,  H01L21/02 ,  B08B3/08 ,  B08B3/02

CPC classification number: H01L22/26 ,  B01F3/088 ,  B01F15/0022 ,  H01L21/02057 ,  H01L21/67017 ,  H01L21/67051

Abstract: Disclosed is a substrate processing system including a nozzle to supply a chemical solution containing a mixture of first and second solutions onto a substrate loaded on a supporter of a process chamber, a chemical solution supplying system to supply the chemical solution to the nozzle, and a controller to control the chemical solution supplying system. The chemical solution supplying system may include a mixing tank mixing a plurality of chemicals to produce the first solution, a supply tank receiving the first solution from the mixing tank and producing the chemical solution, a connection line to connect the mixing tank to the supply tank, and a valve and a pump on the connection line. The pump is controlled to allow the first solution to be supplied into the supply tank at a predetermined supply amount per stroke.

Abstract translation: 公开了一种基板处理系统，其包括：喷嘴，其将含有第一和第二溶液的混合物的化学溶液供应到负载在处理室的支撑体上的基板上;将化学溶液供给到喷嘴的化学溶液供给系统;以及 控制器控制化学溶液供应系统。 化学溶液供给系统可以包括混合多种化学品以制备第一溶液的混合罐，从混合罐接收第一溶液并产生化学溶液的供应罐，将混合罐连接到供应罐的连接管线 ，以及连接线上的阀和泵。 控制泵以允许第一溶液以每冲程以预定的供给量供应到供应罐中。

公开(公告)号：US20160032185A1

公开(公告)日：2016-02-04

申请号：US14879835

申请日：2015-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: C09K13/06 ,  C23F1/26

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20150303036A1

公开(公告)日：2015-10-22

申请号：US14611618

申请日：2015-02-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon JEONG ,  Gil Hun SONG ,  Ki Sang EUM ,  Yongsun KO ,  Kuntack LEE ,  Yongmyung JUN ,  Yong-Jhin CHO

IPC: H01J37/32

CPC classification number: H01J37/32513

Abstract: A substrate treatment apparatus includes a seal on at least one of upper or lower chambers of a process chamber. The seal hermetically closes the substrate treatment region, and may be at a location to prevent a gap from forming between the upper and lower chambers. The lower chamber includes an inner wall and an outer wall defining a groove including the seal. The inner wall has a top surface lower than that of the outer wall. The seal has an atypical cross-sectional shape with a recess facing the substrate treatment region.

Abstract translation: 基板处理装置包括在处理室的上室或下室中的至少一个上的密封。 密封件密封地封闭基板处理区域，并且可以在防止在上部室和下部室之间形成间隙的位置。 下室包括限定包括密封件的槽的内壁和外壁。 内壁具有比外壁低的顶面。 密封件具有非对应的横截面形状，其具有面向衬底处理区域的凹部。

公开(公告)号：US20240339334A1

公开(公告)日：2024-10-10

申请号：US18747951

申请日：2024-06-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Seohyun KIM ,  Sukhoon KIM ,  Jihoon JEONG ,  Younghoo KIM ,  Kuntack LEE

IPC: H01L21/3213 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/32139 ,  G03F7/2004 ,  G03F7/3021 ,  G03F7/325 ,  H01L21/308 ,  H01L21/31144

Abstract: A substrate processing apparatus includes a processing chamber having an internal space and a substrate support within the internal space, a surface tension reducing agent supply system that supplies a surface tension reducing agent as a gas to the processing chamber, and a controller that controls the supply of the surface tension reducing agent via the surface tension reducing agent supply system. The surface tension reducing agent supply system includes at least one supply port that is configured to supply the surface tension reducing agent to the internal space and at least one discharge port that is configured to remove developer from the internal space.

公开(公告)号：US20170062287A1

公开(公告)日：2017-03-02

申请号：US15175062

申请日：2016-06-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyoung Hwan KIM ,  Ingi KIM ,  Mihyun PARK ,  Young-Hoo KIM ,  Ui-soon PARK ,  Jung-Min OH ,  Kuntack LEE ,  Hyosan LEE

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L21/31111 ,  H01L21/67086 ,  H01L21/67253 ,  H01L21/67288

Abstract: A substrate treating apparatus and a method of treating a substrate, the apparatus including a substrate treater that treats a substrate using a chemical solution, the chemical solution including a phosphoric acid aqueous solution and a silicon compound; and a chemical solution supplier that supplies the chemical solution to the substrate treating unit, wherein the chemical solution supplier includes a concentration measurer that measures concentrations of the chemical solutions, the concentration measurer including a first concentration measurer that measures a water concentration of the chemical solution; and a second concentration measurer that measures a silicon concentration of the chemical solution.

Abstract translation: 一种基板处理装置及其处理方法，其特征在于，具备使用化学溶液处理基板的基板处理装置，所述化学溶液含有磷酸水溶液和硅化合物; 以及向所述基板处理单元供给所述化学溶液的化学溶液供给体，所述化学溶液供给体包含测定所述化学溶液浓度的浓度测定器，所述浓度测定器包括测定所述化学溶液的水浓度的第一浓度测定器 ; 以及测量化学溶液的硅浓度的第二浓度测量器。

公开(公告)号：US20150157955A1

公开(公告)日：2015-06-11

申请号：US14537318

申请日：2014-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Jhin CHO ,  Jung-Min OH ,  Yongmyung JUN ,  Yongsun KO ,  Kuntack LEE ,  Hyosan LEE

IPC: B01D3/00

CPC classification number: H01L21/02101 ,  H01L21/02057

Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

Abstract translation: 提供一种净化剂的净化方法。 该方法包括在第一温度或低于第一温度下加热包括蚀刻剂，第一清洁剂和第二清洁剂的第一混合溶液，并蒸馏蚀刻剂和第一清洁剂并除去第二清洁剂。 该方法包括冷凝或压缩蚀刻剂和第一清洗剂，形成包括蚀刻剂和第一清洁剂的第二混合溶液。 该方法包括在低于第二温度的温度下加热第二混合溶液，重新分配蚀刻剂并提取第一清洁剂。 第二个温度低于第一个温度。

公开(公告)号：US20130183824A1

公开(公告)日：2013-07-18

申请号：US13733506

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungho KWON ,  Kuntack LEE ,  Yongsun KO ,  Hongjin KIM ,  Sangwon BAE ,  Sigyung AHN ,  Jun-Youl YANG ,  Sol HAN ,  Bo yun KIM ,  Myung-Ki HONG

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/02074 ,  H01L21/76861

Abstract: A method of fabricating a semiconductor device includes forming a first layer including a first metal, forming a second layer including a second metal, the second layer being adjacent to the first layer, polishing top surfaces of the first and second layers, and cleaning the first and second layers using a cleaning solution. The cleaning solution may include an etching solution etching the first and second layers and an inhibitor suppressing the second layer from being over etched.

Abstract translation: 制造半导体器件的方法包括形成包括第一金属的第一层，形成包括第二金属的第二层，第二层邻近第一层，抛光第一层和第二层的顶表面，以及清洁第一层 和使用清洁溶液的第二层。 清洁溶液可以包括蚀刻溶液，蚀刻第一和第二层以及抑制第二层的抑制剂被过蚀刻。

公开(公告)号：US20240167156A1

公开(公告)日：2024-05-23

申请号：US18474738

申请日：2023-09-26

Applicant: SEMES CO., LTD. ,  Samsung Electronics Co., Ltd.

Inventor： Hyungseok KANG ,  Joonho WON ,  Pilkyun HEO ,  Hongchan CHO ,  Ilyoung KIM ,  Sangjine PARK ,  Seungmin SHIN ,  Jihwan PARK ,  Kuntack LEE

IPC: C23C16/455 ,  G03F7/00 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/45568 ,  G03F7/70033 ,  H01J37/32449

Abstract: A substrate processing apparatus includes a chamber configure to provide a space for processing a substrate, a substrate support configured to support the substrate in the chamber, an upper supply port provided in an upper portion of the chamber and configured to supply a supercritical fluid on an upper surface of the substrate, a recess provided in an upper wall of the chamber and having a diffuser shape whose diameter gradually increases from an outlet of the upper supply port, and a fluidic baffle disposed in the recess between the upper supply port and the substrate and including unit cells repeatedly arranged in a space with same phases and geometric sizes and in fluid communication with each other.

公开(公告)号：US20220415680A1

公开(公告)日：2022-12-29

申请号：US17664243

申请日：2022-05-20

Applicant: Semes Co., Ltd. ,  Samsung Electronics Co., Ltd.

Inventor： Jaeseong LEE ,  Kihoon CHOI ,  Hae-Won CHOI ,  Jihoon JEONG ,  Seohyun KIM ,  Young-Hoo KIM ,  Sangjine PARK ,  Kuntack LEE

IPC: H01L21/67 ,  H01L21/687

Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.