公开(公告)号：US20130145234A1

公开(公告)日：2013-06-06

申请号：US13690544

申请日：2012-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangyong Yoon ,  Kitae Park ,  Jinman Han

IPC: G06F11/10

CPC classification number: G06F11/1068 ,  G06F11/1008 ,  G06F11/1072 ,  G11C29/52

Abstract: Methods of operating memory systems and nonvolatile memory devices include performing error checking and correction (ECC) operations on M pages of data read from a first “source” portion of M-bit nonvolatile memory cells within the nonvolatile memory device to thereby generate M pages of ECC-processed data, where M is a positive integer greater than two (2). A second “target” portion of M-bit nonvolatile memory cells within the nonvolatile memory device is then programmed with the M pages of ECC-processed data using an address-scrambled reprogramming technique, for example.

Abstract translation: 操作存储器系统和非易失性存储器件的方法包括在从非易失性存储器件中的M位非易失性存储器单元的第一“源”部分读取的M页数据上执行错误校验和校正（ECC）操作，从而产生M页的 ECC处理的数据，其中M是大于2（2）的正整数。 例如，非易失性存储器件中的M位非易失性存储单元的第二“目标”部分然后使用地址加扰的重新编程技术用ECC处理数据的M页被编程。

公开(公告)号：US11817158B2

公开(公告)日：2023-11-14

申请号：US18079433

申请日：2022-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Doo-Yeun Jung ,  Young-Jin Cho ,  Bu-Il Nam ,  Nari Lee ,  Yeji Nam ,  Sangyong Yoon

IPC: G11C16/34 ,  G11C16/08 ,  G11C16/30 ,  G11C16/24 ,  G11C16/10 ,  G11C16/16

CPC classification number: G11C16/3459 ,  G11C16/08 ,  G11C16/102 ,  G11C16/16 ,  G11C16/24 ,  G11C16/30

Abstract: An operation method of a nonvolatile memory device which includes a memory block having wordlines includes performing an erase on the memory block, performing a block verification on the memory block by using a 0-th erase verification voltage, performing a delta verification on the memory block by using a first erase verification voltage different from the 0-th erase verification voltage when a result of the block verification indicates a pass, and outputting information about an erase result of the memory block based on the result of the block verification or a result of the delta verification. The delta verification includes generating delta counting values respectively corresponding to wordline groups by using the first erase verification voltage, generating a delta value based on the delta counting values, and comparing the delta value and a first reference value.

公开(公告)号：US20230153000A1

公开(公告)日：2023-05-18

申请号：US18052285

申请日：2022-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAE-HOON CHOI ,  Sang-Wan Nam ,  Sangyong Yoon ,  Kookhyun Cho

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/0619 ,  G06F3/0679

Abstract: A memory package includes a printed circuit board, a first memory device that is stacked on the printed circuit board, and a second memory device stacked on the first memory device. The first memory device includes a first one-time programmable (OTP) block, the second memory device includes a second OTP block different from the first OTP block, and a horizontal distance from one side of the first memory device to the first OTP block is different from a horizontal distance from one side of the second memory device to the second OTP block.

公开(公告)号：US09613687B2

公开(公告)日：2017-04-04

申请号：US14147063

申请日：2014-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungryun Kim ,  Sangyong Yoon

IPC: G11C11/56 ,  G11C16/34 ,  G11C16/04 ,  G11C29/02 ,  G06F11/10 ,  H01L27/11578 ,  H03M13/37

CPC classification number: G11C11/5642 ,  G06F11/1012 ,  G06F11/1048 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3427 ,  G11C16/349 ,  G11C29/028 ,  G11C2211/5644 ,  H01L27/11578 ,  H03M13/373

Abstract: In one embodiment, the method includes performing a read operation on a memory, and determining, by a memory controller, whether to perform a reliability verification read operation based on a count value and a reference value. The count value is based on a number of read commands issued by the memory controller to the memory, and the reliability verification read operation is for reading data from at least one memory cell associated with at least one unselected word line in the memory. An unselected word line is a word line not selected during the read operation. The method further includes performing the reliability verification read operation for the at least one unselected word line based on the determining.

公开(公告)号：US09064545B2

公开(公告)日：2015-06-23

申请号：US13721859

申请日：2012-12-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongsung Cho ,  Kihwan Choi ,  Il Han Park ,  Kiwhan Song ,  Sangyong Yoon

IPC: G11C16/04 ,  G11C7/04 ,  G11C16/10

CPC classification number: G11C7/04 ,  G11C16/0483 ,  G11C16/10

Abstract: A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line.

Abstract translation: 非易失性存储器件的编程方法包括：确定非易失性存储器件的温度状态，根据温度条件确定编程脉冲周期，使用编程脉冲周期向选定字线提供编程电压，并提供通过电压 在将程序电压提供给所选择的字线的同时，将其作为未选择的字线。

公开(公告)号：US08964468B2

公开(公告)日：2015-02-24

申请号：US14319137

申请日：2014-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangyong Yoon ,  Kitae Park ,  Jinman Han ,  Wonseok Lee

IPC: G11C16/04 ,  G11C16/10 ,  G11C14/00

CPC classification number: G11C16/10 ,  G11C11/56 ,  G11C11/5628 ,  G11C14/0018 ,  G11C16/0483 ,  G11C16/26 ,  G11C2211/5641 ,  G11C2211/5642 ,  G11C2211/5643

Abstract: A data storage device includes a non-volatile memory device which includes a memory cell array; and a memory controller which includes a buffer memory. The operating method of the data storage device includes storing data in the buffer memory, and determining whether the data stored in the buffer memory is data accompanying a buffer program operation of the memory cell array. When the data stored in the buffer memory is data accompanying the buffer program operation, the method further includes determining whether a main program operation on the memory cell array is required, and when a main program operation on the memory cell array is required, determining a program pattern of the main program operation on the memory cell array. The method further includes issuing a set of commands for the main program operation on the memory cell array to the multi-bit memory device based on the program pattern.

Abstract translation: 数据存储装置包括：非易失性存储装置，其包括存储单元阵列; 以及包括缓冲存储器的存储器控​​制器。 数据存储装置的操作方法包括将数据存储在缓冲存储器中，并且确定存储在缓冲存储器中的数据是否是伴随存储器单元阵列的缓冲器程序操作的数据。 当存储在缓冲存储器中的数据是伴随缓冲器程序操作的数据时，该方法还包括确定是否需要对存储单元阵列的主程序操作，以及当需要存储单元阵列的主程序操作时， 存储单元阵列中的主程序操作的程序模式。 该方法还包括基于该程序模式向存储单元阵列发出用于主程序操作的一组命令到多位存储器件。