公开(公告)号：US20230295493A1

公开(公告)日：2023-09-21

申请号：US18185789

申请日：2023-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nayoun WON ,  Tae-Gon KIM ,  Minho KIM ,  Shang Hyeun PARK ,  Seungrim YANG ,  Jun Ho LEE ,  Shin Ae JUN ,  Yebin JUNG ,  A Ra JO

IPC: C09K11/62 ,  C09K11/02 ,  H10K59/38 ,  H01L33/50

CPC classification number: C09K11/623 ,  C09K11/02 ,  H10K59/38 ,  H01L33/502 ,  H10K59/12

Abstract: A color conversion panel, comprising a color conversion layer comprising a color conversion region and optionally a partition wall defining each region of the color conversion layer, wherein the color conversion region comprises a first region corresponding to a first pixel, the first region comprises a first composite, the first composite comprises a matrix and a semiconductor nanoparticle, wherein the semiconductor nanoparticle is dispersed in the matrix, the semiconductor nanoparticle comprises silver, a Group 13 metal, zinc, and a chalcogen element, the semiconductor nanoparticle emits a first light, the Group 13 metal is indium, gallium, aluminum, or a combination thereof, the chalcogen element is sulfur, selenium, or a combination thereof, and in the semiconductor nanoparticle, a mole ratio of zinc to a total sum of silver, Group 13 metal, and zinc is greater than or equal to about 0.01:1.

公开(公告)号：US20230295491A1

公开(公告)日：2023-09-21

申请号：US18185810

申请日：2023-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： A Ra JO ,  Nayoun WON ,  Yebin JUNG ,  Minho KIM ,  Tae-Gon KIM ,  Seungrim YANG ,  Shin Ae JUN

IPC: C09K11/62 ,  C09K11/02 ,  H01L33/50

CPC classification number: C09K11/621 ,  C09K11/02 ,  H01L33/502 ,  B82Y20/00

Abstract: A semiconductor nanoparticle, and a method for producing the semiconductor nanoparticle, and a composite, a color conversion panel, and a display panel including the semiconductor nanoparticle. The semiconductor nanoparticle includes silver, a Group 13 metal including indium and gallium, and a chalcogen element including sulfur and optionally selenium, the semiconductor nanoparticle is configured to emit a green light with an emission peak wavelength of 500 nanometers to 580 nanometers, and a full width at half maximum of about 5 nm to about 70 nm. The semiconductor nanoparticle exhibits a quantum yield of greater than or equal to about 50%, and includes a mole ratio (In+Ga):Ag of about 1:1 to about 3.5:1.

公开(公告)号：US20250092275A1

公开(公告)日：2025-03-20

申请号：US18884655

申请日：2024-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hoon WON ,  Deuk Kyu MOON ,  Shang Hyeun PARK ,  Tae-Gon KIM ,  Dongjin YUN

IPC: C09D11/50 ,  B82Y20/00 ,  B82Y40/00 ,  C09D11/037 ,  C09D11/107 ,  C09D11/52 ,  C09K11/02 ,  C09K11/62 ,  G02F1/13357 ,  H01L33/50 ,  H10K59/38

Abstract: An ink composition including a semiconductor nanoparticle, a first organic ligand, and a polymerizable monomer; and a semiconductor nanoparticle-polymer composite prepared therefrom. The semiconductor nanoparticle includes a Group 11-13-16 compound including silver, indium, gallium, and sulfur. The first organic ligand includes an aromatic group and fluorine, and in the ink composition, the amount of the semiconductor nanoparticles is about 2 weight percent to about 70 weight percent based on a total weight of the ink composition.

公开(公告)号：US20240182729A1

公开(公告)日：2024-06-06

申请号：US18510968

申请日：2023-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deuk Kyu MOON ,  Shang Hyeun PARK ,  Jong Hoon WON ,  Tae-Gon KIM

IPC: C09D11/106 ,  C09D11/03 ,  C09D11/101 ,  C09D11/52 ,  H01L33/50 ,  H10K59/38

CPC classification number: C09D11/106 ,  C09D11/03 ,  C09D11/101 ,  C09D11/52 ,  H01L33/502 ,  H10K59/38 ,  H10K2102/331

Abstract: An ink composition including a semiconductor nanoparticle and a polymerizable monomer, wherein the semiconductor nanoparticle includes zinc, and a Group 11-13-16 compound including silver, a Group 13 metal, and a Group 16 element including sulfur, and a first organic ligand including a compound or a moiety represented by R1-COOA, wherein R1 is a first organic group, and A is hydrogen or a portion linked to a surface of the semiconductor nanoparticle.

公开(公告)号：US20240124765A1

公开(公告)日：2024-04-18

申请号：US18475698

申请日：2023-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hoon WON ,  Deuk Kyu MOON ,  Shang Hyeun PARK ,  Tae-Gon KIM ,  Young Hoon LEE ,  Deuk Seok CHUNG

IPC: C09K11/02 ,  C08K9/04 ,  C09K11/08 ,  C09K11/88 ,  H01L25/075 ,  H10K59/38

CPC classification number: C09K11/025 ,  C08K9/04 ,  C09K11/0883 ,  C09K11/883 ,  H01L25/0753 ,  H10K59/38 ,  B82Y20/00

Abstract: A quantum dot, a quantum dot composite, a composition for preparing a quantum dot composite, a display panel including the quantum dot composite, and an electronic device including the display panel, wherein the quantum dot includes a core including a semiconductor nanocrystal including indium and phosphorus, a shell disposed on the core and including a semiconductor nanocrystal, and a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, both of which are present on the surface of the shell:

公开(公告)号：US20230295492A1

公开(公告)日：2023-09-21

申请号：US18185755

申请日：2023-03-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nayoun WON ,  Tae-Gon KIM ,  Minho KIM ,  Seungrim YANG ,  Shin Ae JUN ,  Yebin JUNG ,  A Ra JO

IPC: C09K11/62 ,  C09K11/02 ,  H10K59/38 ,  H01L33/50

CPC classification number: C09K11/623 ,  C09K11/02 ,  H10K59/38 ,  H01L33/502

Abstract: A semiconductor nanoparticle, including silver, a Group 13 metal, and a chalcogen element, wherein the semiconductor nanoparticle emits a first light, the Group 13 metal includes gallium, and optionally further includes indium, aluminum, or a combination thereof, the chalcogen element includes sulfur, and optionally further includes selenium, the first light has a full width at half maximum of greater than or equal to about 5 nanometers (nm) to less than or equal to about 70 nm, the first light has a maximum emission wavelength of greater than or equal to about 500 nm to less than or equal to about 600 nm, the semiconductor nanoparticle has a quantum yield of greater than or equal to about 50%, a mole ratio of gallium to sulfur is greater than or equal to about 0.1:1 to less than or equal to about 1:1, and a charge balance value defined by Equation 1 herein.

公开(公告)号：US20190164776A1

公开(公告)日：2019-05-30

申请号：US16123262

申请日：2018-09-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-In CHOI ,  Sang-Hoon HAN ,  Sun-Jung KIM ,  Tae-Gon KIM ,  Hyun-Chul SONG

IPC: H01L21/3115 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/311 ,  H01L21/265 ,  H01L21/02

Abstract: A method of manufacturing a semiconductor device, the method including forming dummy gate structures on a substrate; forming spacers on sidewalls of the dummy gate structures; forming a preliminary first interlayer insulation pattern to fill a gap between adjacent spacers; etching an upper portion of the preliminary first interlayer insulation pattern through a first etching process to form a preliminary second interlayer insulation pattern; implanting an ion on the dummy gate structures, the spacers, and the preliminary second interlayer insulation pattern through an ion-implanting process; etching an upper portion of the preliminary second interlayer insulation pattern through a second etching process to form an interlayer insulation pattern having a flat upper surface; and forming a capping pattern on the interlayer insulation pattern to fill a gap between the spacers.

公开(公告)号：US20150340445A1

公开(公告)日：2015-11-26

申请号：US14645888

申请日：2015-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Young CHOI ,  Tae-Gon KIM ,  Hyun-Pil NOH ,  Jae-Sik BAE ,  Sam-Jong CHOI

IPC: H01L29/36 ,  H01L27/146

CPC classification number: H01L29/36 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H01L27/14683 ,  H01L27/14689

Abstract: A substrate structure include a lower substrate doped with n-type impurities having a first impurity concentration, an epitaxial layer on the lower substrate, and a metallic-contaminant collection area spaced apart from the epitaxial layer in the lower substrate, the metallic-contaminant collection area doped with impurities having a second impurity concentration higher than the first impurity concentration, the metallic-contaminant collection area having lattice defects, and an upper surface of the metallic-contaminant collection area being spaced apart from a top surface of the lower substrate at a distance in a range of about 0.1 μm to about 3 μm.

Abstract translation: 衬底结构包括掺杂有具有第一杂质浓度的n型杂质的下衬底，下衬底上的外延层和与下衬底中的外延层间隔开的金属污染物收集区域，金属污染物收集 掺杂有第二杂质浓度高于第一杂质浓度的杂质的区域，金属污染物收集区域具有晶格缺陷，并且金属污染物收集区域的上表面与下基板的顶表面间隔开 在约0.1μm至约3μm的范围内的距离。

公开(公告)号：US20140357062A1

公开(公告)日：2014-12-04

申请号：US14290171

申请日：2014-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joong-Han SHIN ,  Bong-Jin KUH ,  Tae-Gon KIM ,  Han-Mei CHOI ,  Jeong-Meung KIM

IPC: H01L21/02

CPC classification number: G02B6/136 ,  G02B6/12004 ,  G02B2006/12061 ,  G02B2006/12169

Abstract: A method of fabricating a semiconductor device, the method including forming a trench on a substrate; forming an insulating layer pattern within the trench; depositing an amorphous material on the substrate and the insulating layer pattern; planarizing the amorphous material; removing a portion of the amorphous material, the removed portion of the amorphous material being on an area of the substrate where the trench has been formed; crystallizing remaining portions of the amorphous material into a single crystal material; and planarizing the single crystal material.

Abstract translation: 一种制造半导体器件的方法，所述方法包括在衬底上形成沟槽; 在沟槽内形成绝缘层图案; 在基板和绝缘层图案上沉积非晶材料; 平面化无定形材料; 去除所述非晶材料的一部分，所述非晶材料的去除部分位于已经形成所述沟槽的所述衬底的区域上; 将所述无定形材料的剩余部分结晶成单晶材料; 并平面化单晶材料。