Abstract:
A color polarizing film including a polymer and a dichroic dye having an absorption wavelength region of about 380 nm to about 780 nm, wherein the color polarizing film exhibits a maximum absorption wavelength (λmax) in a wavelength range of about 380 nm to about 780 nm is provided.
Abstract:
An ink composition including a semiconductor nanoparticle, a first organic ligand, and a polymerizable monomer; and a semiconductor nanoparticle-polymer composite prepared therefrom. The semiconductor nanoparticle includes a Group 11-13-16 compound including silver, indium, gallium, and sulfur. The first organic ligand includes an aromatic group and fluorine, and in the ink composition, the amount of the semiconductor nanoparticles is about 2 weight percent to about 70 weight percent based on a total weight of the ink composition.
Abstract:
An ink composition including a semiconductor nanoparticle and a polymerizable monomer, wherein the semiconductor nanoparticle includes zinc, and a Group 11-13-16 compound including silver, a Group 13 metal, and a Group 16 element including sulfur, and a first organic ligand including a compound or a moiety represented by R1-COOA, wherein R1 is a first organic group, and A is hydrogen or a portion linked to a surface of the semiconductor nanoparticle.
Abstract:
A quantum dot, a quantum dot composite, a composition for preparing a quantum dot composite, a display panel including the quantum dot composite, and an electronic device including the display panel, wherein the quantum dot includes a core including a semiconductor nanocrystal including indium and phosphorus, a shell disposed on the core and including a semiconductor nanocrystal, and a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2, both of which are present on the surface of the shell:
Abstract:
A chemical mechanical polishing method including preparing a polishing pad including a polishing surface having an elastic modulus at room temperature of about 300 MPa to about 400 MPa, positioning a semiconductor structure having a surface, wherein the surface and the polishing surface of the polishing pad face each other, supplying polishing slurry including nano-abrasive having an average particle diameter of less than about 10 nm between the surface of the semiconductor structure and the polishing surface of the polishing pad, and contacting the surface of the semiconductor structure with the polishing surface of the polishing pad to polish the surface with the polishing slurry. A method of manufacturing a semiconductor device including the the chemical mechanical polishing method, a polishing pad used in the method, and a chemical mechanical polishing device.
Abstract:
A method of manufacturing a semiconductor nanoparticle, the semiconductor nanoparticle manufactured therefrom, and an electronic device including the semiconductor nanoparticle. The method of manufacturing the semiconductor nanoparticle includes combining a first semiconductor nanocrystal that includes silver, a Group 13 element, and a chalcogen element, with a gallium precursor, a sulfur precursor, and a silver compound in a medium including an organic solvent; and heating the medium to a reaction temperature to obtain a crude solution including the semiconductor nanoparticles. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and the size is greater than or equal to about 2 nm and less than or equal to about 50 nm.
Abstract:
A composition comprising a cation polymerizable organic compound and an organosiloxane comprising at least one silsesquioxane, wherein each silsesquioxane independently comprises an inorganic core having a SiO3/2 moiety and an organic group having a cation polymerizable functional group, wherein the organic group in the comprises a first organic group represented by Chemical Formula 1 a second organic group represented by Chemical Formula 2, R1—(CH2)n1—* Chemical Formula 1 R2—(CH2)n2—* Chemical Formula 2 wherein R1 and R2 are each independently the cation polymerizable functional group, n1 is an integer ranging from 1 to 3, and n2 is an integer of 4 or greater.
Abstract:
A color polarizing film including a first layer including a first polymer and a first dichroic dye having an absorption wavelength region of about 380 nm to about 780 nm and a second layer including a second polymer and a second dichroic dye having an absorption wavelength region of about 380 nm to about 780 nm, wherein the second layer is disposed on the first layer, wherein a polarization axis of the first layer and a polarization axis of a second layer cross each other, and wherein the color polarizing film exhibits a maximum absorption wavelength (λmax) in a wavelength range of about 380 nm to about 780 nm.
Abstract:
A composition for a polarization film including: a transparent resin having a boiling point of greater than or equal to 130° C.; and a dichroic dye represented by Chemical Formula 1,
Abstract:
A polarization film, including: a hydrophobic polymer resin and a dichroic dye represented by Chemical Formula 1: wherein in Chemical Formula 1, wherein, in Chemical Formula 1, Ar1 is a substituted or unsubstituted C6 to C15 arylene group, Ar2 is a C6 to C15 arylene group substituted with at least one of a substituted or unsubstituted C1 to C20 alkyl group, a substituted or unsubstituted C1 to C20 alkoxy group, a halogen atom and a halogen-containing group, Ar3 is a C6 to C15 arylene group substituted with an amide group, R1 is a substituted or unsubstituted C1 to C20 alkyl group or a substituted or unsubstituted C1 to C20 alkoxy group, R2 and R3 are each independently a substituted or unsubstituted C1 to C20 alkyl group, or R2 and R3 are linked to each other to form a ring, and n is 1 or 2.