Manufacturing method and fluid supply system for treating substrate
    11.
    发明授权
    Manufacturing method and fluid supply system for treating substrate 有权
    用于处理基材的制造方法和流体供应系统

    公开(公告)号:US09524864B2

    公开(公告)日:2016-12-20

    申请号:US13762952

    申请日:2013-02-08

    Abstract: A method of manufacture and fluid supply system for treating a substrate is provided. The fluid supply system for treating a substrate may include a substrate dry part supplying a dry fluid to dry a rinse solution doped on a substrate; a dry fluid separation part retrieving a mixed fluid that the dry fluid and the rinse solution are mixed with each other during a dry process of the substrate from the substrate dry part and separating the dry fluid from the mixed fluid; and a dry fluid supply part resupplying the dry fluid separated from the dry fluid separation part to the substrate dry part.

    Abstract translation: 提供了一种用于处理基板的制造方法和流体供应系统。 用于处理基底的流体供应系统可以包括:供给干燥流体以干燥掺杂在基底上的漂洗溶液的基底干燥部分; 干燥流体分离部件,其在从所述基材干燥部分干燥所述基材的干燥过程期间将所述干燥流体和所述冲洗溶液彼此混合的混合流体,并将所述干燥流体与所述混合流体分离; 以及将干燥流体分离部分分离的干燥流体再供给到基板干燥部分的干燥流体供给部件。

    APPARATUS AND METHODS FOR TREATING A SUBSTRATE
    12.
    发明申请
    APPARATUS AND METHODS FOR TREATING A SUBSTRATE 有权
    用于处理基板的装置和方法

    公开(公告)号:US20130145640A1

    公开(公告)日:2013-06-13

    申请号:US13707253

    申请日:2012-12-06

    Abstract: A substrate treatment apparatus is provided. The apparatus may include a process chamber configured to have an internal space, a substrate supporting member disposed in the process chamber to support a substrate, a first supplying port configured to supply a supercritical fluid to a region of the internal space located below the substrate, a second supplying port configured to supply a supercritical fluid to other region of the internal space located over the substrate, and an exhaust port configured to exhaust the supercritical fluid from the process chamber to an exterior region.

    Abstract translation: 提供了一种基板处理装置。 该装置可以包括被配置为具有内部空间的处理室,设置在处理室中以支撑基板的基板支撑构件,被配置为将超临界流体供应到位于基板下方的内部空间的区域的第一供应端口, 第二供应端口,其构造成将超临界流体供应到位于所述基板上方的所述内部空间的其他区域;以及排气端口,其构造成将所述超临界流体从所述处理室排出到外部区域。

    Process Chamber and Substrate Processing Apparatus Including the Same

    公开(公告)号:US20210217636A1

    公开(公告)日:2021-07-15

    申请号:US17217417

    申请日:2021-03-30

    Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

    Process chamber for a supercritical process and apparatus for treating substrates having the same

    公开(公告)号:US10818522B2

    公开(公告)日:2020-10-27

    申请号:US15978303

    申请日:2018-05-14

    Abstract: Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

    Substrate treating apparatus
    17.
    发明授权

    公开(公告)号:US09627233B2

    公开(公告)日:2017-04-18

    申请号:US14187556

    申请日:2014-02-24

    CPC classification number: H01L21/6708 H01L21/67017 H01L21/67051

    Abstract: Provided is a substrate treating apparatus including a housing; a plurality of opening-and-closing members configured to provide a driving force for opening and closing the housing; a fluid storing member supplying a fluid to the opening-and-closing members; and a fluid distribution unit connected to the fluid storing member via a supply conduit to distribute the fluid supplied from the fluid storing member to the opening-and-closing members. The fluid distribution unit includes a distribution conduit diverging from the supply conduit and connected to a corresponding one of the opening-and-closing members; and a fluid distribution member provided at a junction between the supply conduit and the distribution conduit.

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