3D image sensor module and electronic apparatus including the same

    公开(公告)号:US10511826B2

    公开(公告)日:2019-12-17

    申请号:US15883437

    申请日:2018-01-30

    Abstract: A three-dimensional (3D) image sensor device and an electronic apparatus including the 3D image sensor device are provided. The 3D image sensor device includes: a shutter driver that generates a driving voltage of a sine wave biased with a first bias voltage, from a loss-compensated recycling energy; an optical shutter that varies transmittance of reflective light reflected from a subject, according to the driving voltage, and modulates the reflective light to generate at least two optical modulation signals having different phases; and an image generator that generates 3D image data for the subject which includes depth information calculated based on a phase difference between the at least two optical modulation signals.

    Depth image acquisition apparatus and method of acquiring depth information

    公开(公告)号:US10205933B2

    公开(公告)日:2019-02-12

    申请号:US14622283

    申请日:2015-02-13

    Inventor: Yonghwa Park

    Abstract: A depth image acquisition apparatus and a method of acquiring depth information are provided. The method of acquiring depth information includes: sequentially projecting, to a subject, N different beams of light emitted from a light source for a time period including an idle time for each of the N different beams of transmitted light, where N is a natural number that is equal to or greater than 3; modulating, using a light modulation signal, beams of reflected light that are obtained by reflection of the N different beams from the subject; obtaining N phase images corresponding to the N different beams of light by capturing, using a rolling shutter method, the modulated beams of reflected light; and obtaining depth information by using the obtained N phase images.

    Optical modulator using phase change material and device including the same

    公开(公告)号:US10908437B2

    公开(公告)日:2021-02-02

    申请号:US15674103

    申请日:2017-08-10

    Abstract: Provided are optical modulators and devices including the optical modulators. The optical modulator may include an optical modulation layer that includes a phase change material. A first electrode may be provided on a first surface of the optical modulation layer. A second electrode may be provided on a second surface of the optical modulation layer. A first phase controlling layer may be provided, the first electrode being disposed between the first phase controlling layer and the optical modulation layer. A second phase controlling layer may be provided, the second electrode being disposed between the second phase controlling layer and the optical modulation layer. Each of the first and the second phase controlling layers may have an optical thickness corresponding to an odd multiple of λ/4, where λ is a wavelength of incident light to be modulated by the optical modulator. The optical modulator may further include at least one reflective layer. The optical modulation layer may have a thickness of about 10 nm or less. An operating voltage of the optical modulator may be about 10 V or less.

    Optical device including three-coupled quantum well structure having asymmetric multi-energy levels

    公开(公告)号:US10727370B2

    公开(公告)日:2020-07-28

    申请号:US15332528

    申请日:2016-10-24

    Abstract: Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The coupled quantum well includes a first quantum well layer, a second quantum well layer, a third quantum well layer, a first coupling barrier between the first quantum well layer and the second quantum well layer, and a second coupling barrier between the second quantum well layer and the third quantum well layer. The second quantum well layer is between the first quantum well layer and the third quantum well layer. An energy band gap of the second quantum well layer is less than an energy band gap of the first quantum well layer, and an energy band gap of the third quantum well layer is equal to or less than the energy band gap of the second quantum well layer.

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