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    Broadband light illuminators
    12.
    发明授权
    Broadband light illuminators 有权
    宽带灯光源

    公开(公告)号：US08841824B2

    公开(公告)日：2014-09-23

    申请号：US13667203

    申请日：2012-11-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woo-Seok Ko ,  Yu-Sin Yang ,  Sue-Jin Cho ,  Won-Don Joo ,  Min-Kook Kim ,  Sang-Kil Lee ,  Byeong-Hwan Jeon

    IPC: H01J5/16 ,  H01J61/40 ,  H01K1/26 ,  H01K1/30

    CPC classification number: H01J65/04

    Abstract: A broadband light illuminator of an optical inspector for optically detecting defects of an inspection object may include an electrode-less chamber including a plasma area from which broadband light is generated; a first energy provider, exterior to the chamber, configured to provide first energy for ionizing high pressure gases to form ionized gases in the chamber; a second energy provider, exterior to the chamber, configured to provide second energy for transforming the ionized gases into a plasma state to form the plasma area at a central portion of the chamber; an elliptical reflector having a first focus at which the chamber is positioned and a second focus such that the broadband light is reflected from the elliptical reflector toward the second focus; and a lens unit focusing the reflected broadband light onto the inspection object to form an inspection light for detecting the defects of the inspection object.

    Abstract translation: 用于光学检测检查对象的缺陷的光学检查器的宽带照明器可以包括：无电极室，包括产生宽带光的等离子体区域; 第一能量提供者，在室外，被配置为提供第一能量，用于离子化高压气体以在室中形成离子化气体; 第二能量供应器，室外，被配置为提供第二能量，用于将电离气体转换成等离子体状态，以在室的中心部分形成等离子体区域; 具有第一焦点的椭圆形反射器，室被定位，第二焦点使得宽带光从椭圆形反射器反射到第二焦点; 以及透镜单元，将反射的宽带光聚焦到检查对象上，以形成用于检测检查对象的缺陷的检查光。

    METHODS OF FABRICATING MICROELECTRONIC SUBSTRATE INSPECTION EQUIPMENT
    13.
    发明申请
    METHODS OF FABRICATING MICROELECTRONIC SUBSTRATE INSPECTION EQUIPMENT 审中-公开
    微电子基板检测设备的制作方法

    公开(公告)号：US20140224987A1

    公开(公告)日：2014-08-14

    申请号：US14257048

    申请日：2014-04-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min-Kook KIM ,  Woo-Seok Ko ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chang-Hoon Choi

    IPC: H01J37/26 ,  H01J37/08

    CPC classification number: H01J37/265 ,  H01J37/08 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/0807

    Abstract: Microelectronic substrate inspection equipment includes a gas container which contains helium gas, a helium ion generator which is disposed in the gas container and converts the helium gas into helium ions and a wafer stage which is disposed under the gas container and on which a substrate to be inspected is placed. The equipment further includes a secondary electron detector which is disposed above the wafer stage and detects electrons generated from the substrate, a compressor which receives first gaseous nitrogen from a continuous nitrogen supply device and compresses the received first gaseous nitrogen into liquid nitrogen, a liquid nitrogen dewar which is connected to the compressor and stores the liquid nitrogen, and a cooling device that is coupled to the helium ion generator. The cooling device is disposed on the gas container, and cools the helium ion generator by vaporizing the liquid nitrogen received from the liquid nitrogen dewar into second gaseous nitrogen. Related methods are also disclosed.

    Abstract translation: 微电子基板检查设备包括含有氦气的气体容器，设置在气体容器中并将氦气转换为氦离子的氦离子发生器和设置在气体容器下方的晶片载台， 检查被放置。 该设备还包括二次电子检测器，其设置在晶片台上方并检测从基板产生的电子;压缩机，其接收来自连续氮供应装置的第一气态氮并将接收到的第一气态氮压缩成液态氮;液氮 连接到压缩机并储存液氮的杜瓦瓶，以及耦合到氦离子发生器的冷却装置。 冷却装置设置在气体容器上，并且通过将从液氮氮气中接收的液氮蒸发成第二气态氮来冷却氦离子发生器。 还公开了相关方法。

    Method and apparatus to measure step height of device using scanning electron microscope
    14.
    发明授权
    Method and apparatus to measure step height of device using scanning electron microscope 有权
    使用扫描电子显微镜测量器件的台阶高度的方法和装置

    公开(公告)号：US08759763B2

    公开(公告)日：2014-06-24

    申请号：US13680347

    申请日：2012-11-19

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Young-Hoon Sohn ,  Jin-Woo Lee ,  Yong-Deok Jeong ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Chung-Sam Jun

    IPC: G01B15/00 ,  G01N23/225 ,  H01J37/26

    CPC classification number: G01B15/00 ,  G01N23/225 ,  G06T7/60 ,  G06T2207/10061 ,  H01J37/222 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/2815 ,  H01J2237/2817

    Abstract: A method of measuring a step height of a device using a scanning electron microscope (SEM), the method may include providing a device which comprises a first region and a second region, wherein a step is formed between the first region and the second region, obtaining a SEM image of the device by photographing the device using a SEM, wherein the SEM image comprises a first SEM image region for the first region and a second SEM image region for the second region, converting the SEM image into a gray-level histogram and calculating a first peak value related to the first SEM image region and a second peak value related to the second SEM image region, wherein the first peak value and the second peak value are repeatedly calculated by varying a focal length of the SEM, and determining a height of the step by analyzing a trend of changes in the first peak value according to changes in the focal length and a trend of changes in the second peak value according to the changes in the focal length.

    Abstract translation: 使用扫描电子显微镜（SEM）测量器件的台阶高度的方法可以包括提供包括第一区域和第二区域的器件，其中在第一区域和第二区域之间形成台阶， 通过使用SEM拍摄该装置来获得该装置的SEM图像，其中，SEM图像包括用于第一区域的第一SEM图像区域和用于第二区域的第二SEM图像区域，将SEM图像转换为灰度级直方图 以及计算与第一SEM图像区域相关的第一峰值和与第二SEM图像区域相关的第二峰值，其中通过改变SEM的焦距来重复计算第一峰值和第二峰值，并且确定 通过根据焦距的变化分析第一峰值的变化趋势和根据焦距变化的第二峰值变化的趋势的步骤的高度 th。

    Method of inspecting pattern defect
    15.
    发明授权
    Method of inspecting pattern defect 有权

    公开(公告)号：US10969428B2

    公开(公告)日：2021-04-06

    申请号：US15283466

    申请日：2016-10-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young-Hoon Sohn ,  Chung-Sam Jun ,  Yu-Sin Yang

    IPC: G01R31/302 ,  G01R31/28 ,  G01R31/307

    Abstract: Provided is a method of inspecting a pattern defect. The method includes: applying a voltage to an object to be inspected and measuring an inspection signal generated in a pattern of the object to be inspected due to the voltage applied to the object to be inspected over time; generating an intensity image showing a relationship between an intensity of the inspection signal measured in the pattern and a time by processing the inspection signal; and detecting a pattern defect position by comparing the intensity image with a comparative intensity image.

    Method of detecting a defect of a substrate and apparatus for performing the same
    18.
    发明授权
    Method of detecting a defect of a substrate and apparatus for performing the same 有权
    检测基板的缺陷的方法及其执行装置

    公开(公告)号：US09194816B2

    公开(公告)日：2015-11-24

    申请号：US14316173

    申请日：2014-06-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min-Ho Rim ,  Yu-Sin Yang ,  Sang-Kil Lee ,  Yong-Deok Jeong ,  Hyung-Suk Cho

    IPC: G01N21/00 ,  G01N21/956 ,  G01N21/95 ,  G01N21/88

    CPC classification number: G01N21/956 ,  G01N21/9501 ,  G01N2021/8835

    Abstract: In a method of detecting a defect of a substrate, a first light having a first intensity may be irradiated to a first region of the substrate through a first aperture. A defect in the first region may be detected using a first reflected light from the first region. A second light having a second intensity may be irradiated to a second region of the substrate through a second aperture. A defect in the second region may be detected using a second reflected light from the second region. Thus, the defects by the regions of the substrate may be accurately detected.

    Abstract translation: 在检测衬底的缺陷的方法中，具有第一强度的第一光可以通过第一孔照射到衬底的第一区域。 可以使用来自第一区域的第一反射光检测第一区域中的缺陷。 具有第二强度的第二光可以通过第二孔照射到衬底的第二区域。 可以使用来自第二区域的第二反射光检测第二区域中的缺陷。 因此，可以精确地检测由基板的区域的缺陷。

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