公开(公告)号：US08450182B2

公开(公告)日：2013-05-28

申请号：US13574254

申请日：2010-12-28

申请人： Satoru Fujii ,  Takumi Mikawa

发明人： Satoru Fujii ,  Takumi Mikawa

IPC分类号： H01L27/24

CPC分类号： H01L27/2463 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1616 ,  H01L45/1625

摘要： A method of manufacturing a non-volatile semiconductor memory element including a variable resistance element and a non-ohmic element. The variable resistance element includes a first electrode, a variable resistance layer, and a shared electrode. The non-ohmic element includes the shared electrode, a semiconductor or insulator layer, and a second electrode. The method includes: forming the first electrode on a substrate; forming the variable resistance layer on the first electrode; forming the shared electrode by nitriding a front surface of the variable resistance layer; forming the semiconductor or insulator layer on the shared electrode; and forming the second electrode. In the forming of the shared electrode, a front surface of a transition metal oxide is nitrided by a plasma nitriding process to form the shared electrode comprising a transition metal nitride.

摘要翻译： 一种制造包括可变电阻元件和非欧姆元件的非易失性半导体存储元件的方法。 可变电阻元件包括第一电极，可变电阻层和共用电极。 非欧姆元件包括共用电极，半导体或绝缘体层和第二电极。 该方法包括：在基板上形成第一电极; 在所述第一电极上形成所述可变电阻层; 通过对可变电阻层的前表面进行氮化而形成共用电极; 在共用电极上形成半导体层或绝缘体层; 并形成第二电极。 在共用电极的形成中，通过等离子体氮化处理使过渡金属氧化物的前表面氮化，形成包含过渡金属氮化物的共用电极。

公开(公告)号：US20130122651A1

公开(公告)日：2013-05-16

申请号：US13812227

申请日：2011-07-26

申请人： Satoru Fujii ,  Takumi Mikawa ,  Haruyuki Sorada

发明人： Satoru Fujii ,  Takumi Mikawa ,  Haruyuki Sorada

IPC分类号： H01L45/00

CPC分类号： H01L45/1616 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/145 ,  H01L45/146

摘要： Each of the step of forming a first variable resistance layer (18a) and the step of forming a second variable resistance layer (18b) includes performing a cycle once or plural times, the cycle consisting of a first step of introducing a source gas composed of molecules containing atoms of a transition metal; a second step of removing the source gas after the first step; a third step of introducing a reactive gas to form a transition metal oxide after the second step; and a fourth step of removing the reactive gas after the third step. The step of forming the first variable resistance layer (18a) is performed in a state in which the substrate is kept at a temperature at which a self-decomposition reaction of the source gas does not occur. One or plural of conditions used for forming the second variable resistance layer (18b) is/are made different from the one or plural conditions used for forming the first variable resistance layer (18a), the conditions being the temperature of the substrate, an amount of the introduced source gas and an amount of the introduced reactive gas.

摘要翻译： 形成第一可变电阻层（18a）的步骤和形成第二可变电阻层（18b）的步骤包括执行一次或多次的循环，所述循环包括：引入由 含有过渡金属原子的分子; 在第一步骤之后除去源气体的第二步骤; 在第二步骤之后引入反应气体以形成过渡金属氧化物的第三步骤; 以及在第三步骤之后除去反应气体的第四步骤。 形成第一可变电阻层（18a）的步骤是在基板保持在不发生源气体的自分解反应的温度的状态下进行的。 使用于形成第二可变电阻层（18b）的一个或多个条件与用于形成第一可变电阻层（18a）的一个或多个条件不同，条件是基板的温度， 的引入源气体和一定量的引入的反应气体。

公开(公告)号：US20120112153A1

公开(公告)日：2012-05-10

申请号：US13380159

申请日：2011-07-13

申请人： Takeki Ninomiya ,  Satoru Fujii ,  Yukio Hayakawa ,  Takumi Mikawa

发明人： Takeki Ninomiya ,  Satoru Fujii ,  Yukio Hayakawa ,  Takumi Mikawa

IPC分类号： H01L45/00

CPC分类号： H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675

摘要： Provided is a nonvolatile memory device which requires a lower initializing voltage such that the nonvolatile memory device can be operated at a low voltage. The nonvolatile memory device (10) includes: a first electrode layer (105) formed above a semiconductor substrate (100); a first oxygen-deficient tantalum oxide layer (106x) formed on the first electrode layer (105) and having a composition represented by TaOx where 0.8≦x≦1.9; a second oxygen-deficient tantalum oxide layer (106y) formed on the first oxygen-deficient tantalum oxide layer (106x) and having a composition represented by TaOy where 2.1≦y; and a second electrode layer (107) formed on the second tantalum oxide layer (106y). The second tantalum oxide layer (106y) has a pillar structure including a plurality of pillars.

摘要翻译： 提供了一种非易失性存储器件，其需要较低的初始化电压，使得非易失性存储器件可以在低电压下操作。 非易失性存储器件（10）包括：形成在半导体衬底（100）上方的第一电极层（105）; 形成在第一电极层（105）上并具有由TaOx表示的组成的第一缺氧钽氧化物层（106x），其中0.8＆lt; 1; x＆nlE; 1.9; 在第一缺氧钽氧化物层（106x）上形成的第二氧缺陷氧化钽层（106y），其具有由TaOy表示的组成，其中2.1＆amp; 和形成在第二钽氧化物层（106y）上的第二电极层（107）。 第二钽氧化物层（106y）具有包括多个柱的柱结构。

公开(公告)号：US20110294259A1

公开(公告)日：2011-12-01

申请号：US13205408

申请日：2011-08-08

申请人： Yoshihiko KANZAWA ,  Koji Katayama ,  Satoru Fujii ,  Shunsaku Muraoka ,  Koichi Osano ,  Satoru Mitani ,  Ryoko Miyanaga ,  Takeshi Takagi ,  Kazuhiko Shimakawa

发明人： Yoshihiko KANZAWA ,  Koji Katayama ,  Satoru Fujii ,  Shunsaku Muraoka ,  Koichi Osano ,  Satoru Mitani ,  Ryoko Miyanaga ,  Takeshi Takagi ,  Kazuhiko Shimakawa

IPC分类号： H01L21/36

CPC分类号： H01L27/101 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/32 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/79 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1675 ,  Y10S438/90

摘要： A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0

摘要翻译： 非易失性存储元件包括设置在第一电极层（103）和第二电极层（107）之间的第一电极层（103），第二电极（107）和电阻变化层（106），电阻 电阻变化层的值根据施加在电极（103），（107）之间的具有不同极性的电信号而可逆地变化，其中电阻变化层（106）具有第一区域，该第一区域包括第一氧缺陷型氧化钽， 由TaOx（0

公开(公告)号：US20100148143A1

公开(公告)日：2010-06-17

申请号：US12600793

申请日：2008-05-16

申请人： Satoru Fujii ,  Yoshihiko Kanzawa ,  Takeshi Takagi ,  Kazuhiko Shimakawa

发明人： Satoru Fujii ,  Yoshihiko Kanzawa ,  Takeshi Takagi ,  Kazuhiko Shimakawa

IPC分类号： H01L45/00 ,  H01L21/16

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1625

摘要： A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the second electrode (105), a resistance value of the resistance variable layer being switchable reversibly in response to an electric signal applied between the electrodes (103), (105), wherein the resistance variable layer (104) comprises an oxide containing tantalum and nitrogen.

摘要翻译： 本发明的非易失性半导体装置包括：（103），设置在第一电极（103）和第二电极（105）之间的第二电极（105）和电阻变化层（104），电阻值 可变层可响应施加在电极（103），（105）之间的电信号而可逆地切换，其中电阻变化层（104）包括含有钽和氮的氧化物。

公开(公告)号：US20090321709A1

公开(公告)日：2009-12-31

申请号：US12376256

申请日：2007-08-17

申请人： Shunsaku Muraoka ,  Satoru Fujii ,  Satoru Mitani ,  Koichi Osano

发明人： Shunsaku Muraoka ,  Satoru Fujii ,  Satoru Mitani ,  Koichi Osano

IPC分类号： H01L27/10 ,  H01L45/00 ,  H01L49/00

CPC分类号： G11C13/0007 ,  G11C11/5685 ,  G11C2213/31 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/79 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1625 ,  H01L45/1683

摘要： A memory element comprises a first electrode, a second electrode, and a resistance variable film 2 which is disposed between the first and second electrodes to be connected to the first and second electrodes, a resistance value of the resistance variable film 2 varying based on voltage applied between the first and second electrodes, the resistance variable film 2 includes a layer 2a made of Fe3O4 and a layer 2b made of Fe2O3 or a spinel structure oxide which is expressed as MFe2O4 (M: metal element except for Fe); and the layer 2a made of Fe3O4 is thicker than the layer 2b made of Fe2O3 or the spinel structure oxide.

摘要翻译： 存储元件包括第一电极，第二电极和电阻可变膜2，电阻可变膜2设置在与第一和第二电极连接的第一和第二电极之间，电阻变化膜2的电阻值基于电压变化 电阻可变膜2包括由Fe 3 O 4制成的层2a和由Fe 2 O 3制成的层2b或以MFe 2 O 4表示的尖晶石结构氧化物（M：除了Fe之外的金属元素）; 由Fe 3 O 4制成的层2a比由Fe 2 O 3或尖晶石结构氧化物制成的层2b厚。

公开(公告)号：US07035629B2

公开(公告)日：2006-04-25

申请号：US10292761

申请日：2002-11-13

申请人： Satoru Fujii

发明人： Satoru Fujii

IPC分类号： H04H3/00

CPC分类号： H04M1/72519 ,  G06F3/0489 ,  H04W88/02

摘要： A mobile telephone and an external user interface processing device are connected to a communication network. The external user interface processing device stores a plurality of user interface programs. The mobile telephone transmits key operation event information to the external user interface processing device. The external user interface processing device executes a user interface program to produce a processing result of the key operation event information. The mobile telephone receives the processing result and controls the display according to the received processing result.

摘要翻译： 移动电话和外部用户接口处理设备连接到通信网络。 外部用户界面处理装置存储多个用户界面程序。 移动电话将键操作事件信息发送到外部用户界面处理装置。 外部用户界面处理装置执行用户界面程序以产生键操作事件信息的处理结果。 移动电话接收处理结果并根据接收到的处理结果控制显示。

公开(公告)号：US06688731B1

公开(公告)日：2004-02-10

申请号：US09701856

申请日：2000-12-01

申请人： Satoru Fujii ,  Isaku Kanno ,  Ryoichi Takayama ,  Osamu Watanabe ,  Kenji Tomita ,  Shigeyuki Takao

发明人： Satoru Fujii ,  Isaku Kanno ,  Ryoichi Takayama ,  Osamu Watanabe ,  Kenji Tomita ,  Shigeyuki Takao

IPC分类号： B41J2045

CPC分类号： B41J2/1629 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1645 ,  B41J2/1646 ,  B41J2002/1425 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/313 ,  H01L41/316

摘要： A piezoelectric thin film element D, in which a piezoelectric thin film 1 with first and second electrode films 2 and 3 respectively formed on its opposite surfaces in the thickness direction is held by a hold film 5, is fabricated by forming each film 1, 2, 3, and 5 on a film formation substrate 11 and removing the film formation substrate 11 by etching. Even when the hold film 5 is made of material such as resin and therefore exhibits relatively poor adhesion with respect to the other films, the piezoelectric thin film 1 is protected from damage by etchant because the first electrode film 2 which comes into contact with the film formation substrate 11 is formed such that the overall circumference of a peripheral edge portion of the first electrode film 2 laterally extends beyond the lateral surface of the piezoelectric thin film 1 and closely adheres to the hold film 5.

摘要翻译： 通过形成每个膜1,2制造压电薄膜元件D，其中分别在其厚度方向的相对表面上形成有第一和第二电极膜2和3的压电薄膜1由保持膜5保持 ，3和5在成膜基板11上，并通过蚀刻去除成膜基板11。 即使当保持膜5由诸如树脂的材料制成并且因此相对于其它膜显示相对较差的粘合力时，由于与膜接触的第一电极膜2，保护了压电薄膜1免受腐蚀剂损伤 形成基板11形成为使得第一电极膜2的周边部分的整个周边横向延伸超过压电薄膜1的侧表面并且紧密地附着到保持膜5。

公开(公告)号：US06326621B1

公开(公告)日：2001-12-04

申请号：US09323730

申请日：1999-06-01

申请人： Takeshi Kamada ,  Ryoichi Takayama ,  Satoru Fujii ,  Atsushi Tomozawa ,  Isaku Kanno

发明人： Takeshi Kamada ,  Ryoichi Takayama ,  Satoru Fujii ,  Atsushi Tomozawa ,  Isaku Kanno

IPC分类号： G01J502

CPC分类号： G01J5/20 ,  G01J5/34

摘要： The invention provides a compact and high performance infrared radiation detector. The infrared radiation detector contains: a substrate; and at least two infrared radiation detector units selected from the group consisting of a pyroelectric infrared radiation detector unit, a resistive bolometer type infrared radiation detector unit and a ferroelectric bolometer type infrared radiation detector unit, the infrared radiation detector units being disposed on the same side of the substrate.

摘要翻译： 本发明提供了一种紧凑且高性能的红外辐射探测器。 红外辐射检测器包含：基板; 以及选自热电型红外线辐射检测器单元，电阻辐射热计型红外线检测器单元和铁电测辐射热计型红外线检测器单元的至少两个红外线检测器单元，所述红外线检测器单元设置在同一侧 的基底。

公开(公告)号：US5717157A

公开(公告)日：1998-02-10

申请号：US351216

申请日：1994-11-30

申请人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Ryoichi Takayama ,  Masafumi Kobune ,  Satoshi Fujii

发明人： Atsushi Tomozawa ,  Satoru Fujii ,  Eiji Fujii ,  Ryoichi Takayama ,  Masafumi Kobune ,  Satoshi Fujii

IPC分类号： C04B35/472 ,  C23C14/08 ,  C23C14/34 ,  C30B23/02 ,  H01L37/02 ,  H01L41/316 ,  H01L35/22 ,  C04B35/491

CPC分类号： H01L41/316 ,  C04B35/472 ,  C23C14/08 ,  C23C14/3414 ,  C30B23/02 ,  C30B29/32 ,  H01L37/025

摘要： A ferroelectric thin film includes lead titanate including La and at least an element which forms a six-coordinate bond with oxygen atoms and which is selected from the group consisting of Mg and Mn. The ferroelectric thin film is imparted with a high c-axis orientation while the film is formed without a polarization process. The ferroelectric thin film is manufactured by the steps of: positioning a MgO single crystal substrate disposed in advance with a foundation platinum electrode by a sputtering method on the surface of a substrate heater, exhausting a chamber, heating the substrate by a substrate heater, letting in sputtering gases Ar and O.sub.2 through a nozzle into the chamber, and maintaining a high degree of vacuum. Then, high frequency electric power is input to a target from a high frequency electric power source to generate plasma, and a film is formed on the substrate. In this way, a ferroelectric thin film containing, for example, �(1-x).multidot.Pb.sub.1-y La.sub.y Ti.sub.1-y/4 O.sub.3 +x.multidot.MgO!, where x=0.01.about.0.10 and y=0.05.about.0.25 can be manufactured.

摘要翻译： 铁电薄膜包括包含La的钛酸铅和至少与氧原子形成六配位键的元素，并且选自Mg和Mn。 铁电薄膜在没有极化过程的情况下形成膜时赋予高c轴取向。 铁电薄膜通过以下步骤制造：通过溅射法将预先设置有基底铂电极的MgO单晶基板定位在基板加热器的表面上，排出室，通过基板加热器加热基板，使 在通过喷嘴将气体Ar和O2溅射到室中，并保持高度的真空度。 然后，将高频电力从高频电源输入到目标物，产生等离子体，在基板上形成膜。 以这种方式，可以制造含有例如[（1-x）xPb1-yLayTi1-y / 4O3 + xxMgO]的铁电薄膜，其中x = 0.01DIFFERENCE 0.10和y = 0.05DIFFERENCE 0.25。