公开(公告)号：US06720220B2

公开(公告)日：2004-04-13

申请号：US10325915

申请日：2002-12-23

申请人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

发明人： Sumito Numazawa ,  Yoshito Nakazawa ,  Masayoshi Kobayashi ,  Satoshi Kudo ,  Yasuo Imai ,  Sakae Kubo ,  Takashi Shigematsu ,  Akihiro Ohnishi ,  Kozo Uesawa ,  Kentaro Oishi

IPC分类号： H01L21336

CPC分类号： H01L21/28114 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L29/0696 ,  H01L29/0869 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/511 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7813 ,  H01L29/7827

摘要： In a method of fabricating a semiconductor device having a MISFET of trench gate structure, a trench is formed from a major surface of a semiconductor layer of first conductivity type which serves as a drain region, in a depth direction of the semiconductor layer, a gate insulating film including a thermal oxide film and a deposited film is formed over the internal surface of the trench, and after a gate electrode has been formed in the trench, impurities are introduced into the semiconductor substrate of first conductivity type to form a semiconductor region of second conductivity type which serves as a channel forming region, and impurities are introduced into the semiconductor region of second conductivity type to form the semiconductor region of first conductivity type which serves as a source region.

摘要翻译： 在制造具有沟槽栅极结构的MISFET的半导体器件的方法中，从半导体层的深度方向上作为漏极区域的第一导电型半导体层的主表面形成沟槽，形成栅极 在沟槽的内表面上形成包括热氧化膜和沉积膜的绝缘膜，并且在沟槽中形成栅电极之后，将杂质引入到第一导电类型的半导体衬底中以形成半导体区域 用作沟道形成区域的第二导电类型，并且将杂质引入到第二导电类型的半导体区域中，以形成用作源极区域的第一导电类型的半导体区域。

公开(公告)号：US06377358B1

公开(公告)日：2002-04-23

申请号：US09219896

申请日：1998-12-24

申请人： Kimiyuki Hayasaki ,  Koji Yamakawa ,  Tsuyoshi Orikasa ,  Hiroyuki Kigami ,  Hisashi Fukai ,  Takayuki Ono ,  Masayoshi Okawa ,  Satoshi Kudo

发明人： Kimiyuki Hayasaki ,  Koji Yamakawa ,  Tsuyoshi Orikasa ,  Hiroyuki Kigami ,  Hisashi Fukai ,  Takayuki Ono ,  Masayoshi Okawa ,  Satoshi Kudo

IPC分类号： B41B1500

CPC分类号： B41J2/04508 ,  B41J2/04536 ,  B41J2/04563 ,  B41J2/04565 ,  B41J2/0458 ,  B41J2/04588 ,  B41J2/04591 ,  B41J2/04598 ,  B41J29/393 ,  B41J2202/21

摘要： A method for correcting a recording head is provided to solve the problems of density unevenness in recorded images. The density comparison is made with the reference density for a predetermined unit in the density distribution of an image recorded by the application of n kinds of signals. Then, one of the n kinds of signals which is close to the reference density is selected. The properties of the signal thus selected are transmitted to the recording head together with the correction data, hence correcting density unevenness.

摘要翻译： 提供了一种用于校正记录头的方法，以解决记录图像中的浓度不均匀性的问题。 通过应用n种信号记录的图像的浓度分布中的预定单位的参考密度进行密度比较。 然后，选择接近参考密度的n种信号之一。 所选择的信号的属性与校正数据一起发送到记录头，从而校正浓度不均匀性。

公开(公告)号：US5965413A

公开(公告)日：1999-10-12

申请号：US860739

申请日：1997-07-03

申请人： Masashi Sakai ,  Hideyuki Yamatoya ,  Satoshi Kudo

发明人： Masashi Sakai ,  Hideyuki Yamatoya ,  Satoshi Kudo

IPC分类号： A23D9/00 ,  A61K38/00 ,  A61P25/28 ,  C07F9/10 ,  C11B11/00 ,  C11C3/00 ,  C12P7/64 ,  C12P9/00 ,  C12P13/04 ,  C12P13/06

CPC分类号： C12P7/6481 ,  C12P13/06 ,  C12P7/6472

摘要： A process for producing phosphatidylserine having a long chain unsaturated fatty acid in its side chain. In this process, a natural lecithin containing long chain unsaturated fatty acid side chain is used as the starting material. Using the natural lecithin as a substrate for reaction, phospholipase-D is caused to act on the substrate under the presence of serine, whereby phosphatidylserine having a side chain derived from the long chain unsaturated fatty acid can be easily obtained through a single step reaction.

摘要翻译： PCT No.PCT / JP96 / 03237 Sec。 371日期1997年7月3日 102（e）1997年7月3日PCT PCT 1996年11月6日PCT公布。 公开号WO97 / 17460 PCT 日期1997年5月15日在侧链具有长链不饱和脂肪酸的磷脂酰丝氨酸的制造方法。 在该方法中，使用含有长链不饱和脂肪酸侧链的天然卵磷脂作为原料。 使用天然卵磷脂作为反应的底物，使磷脂酶-D在丝氨酸存在下作用于底物，由此可以通过单步反应容易地获得具有源自长链不饱和脂肪酸的侧链的磷脂酰丝氨酸。

公开(公告)号：US4808020A

公开(公告)日：1989-02-28

申请号：US17042

申请日：1987-02-20

申请人： Satoshi Kudo

发明人： Satoshi Kudo

IPC分类号： B41J29/54 ,  B41J19/20 ,  B41J29/02

CPC分类号： B41J29/02 ,  B41J19/20

摘要： In a carriage fixing mechanism for a printing apparatus, engaging openings are formed in a frame disposed at a side portion of the printer and a side portion of a carriage, respectively. The mechanism includes a fixing member. The fixing member includes a first engaging portion to be detachably engaged with the opening of the frame and a second engaging portion to be detachably engaged with the opening of the carriage.

摘要翻译： 在用于打印设备的托架固定机构中，接合开口分别形成在设置在打印机的侧部和托架的侧部的框架中。 该机构包括固定构件。 固定构件包括可拆卸地与框架的开口接合的第一接合部分和与滑架的开口可拆卸地接合的第二接合部分。

公开(公告)号：US4641419A

公开(公告)日：1987-02-10

申请号：US712761

申请日：1985-03-18

申请人： Satoshi Kudo

发明人： Satoshi Kudo

IPC分类号： H01L21/331 ,  H01L21/74 ,  H01L21/76 ,  H01L21/761 ,  H01L21/8228 ,  H01L27/082 ,  H01L29/73 ,  H01L29/732 ,  H01L21/265

CPC分类号： H01L21/82285 ,  H01L21/743 ,  H01L21/761 ,  H01L27/0826 ,  H01L29/7327 ,  Y10S148/01

摘要： A process for producing semiconductor devices with a high-performance vertical pnp transistor having a high h.sub.fe and a high f.sub.T, comprising a step for forming an impurity region of a high concentration in a portion of a p-type buried layer and for increasing the concentration in a diffusion layer for isolation, a step for forming an n-type well region that reaches the p-type buried layer and that serves as a base of the vertical pnp transistor, and a step for forming an emitter of the vertical pnp transistor in a portion of said n-type well region, and for forming a collector electrode contact portion of the vertical pnp transistor, said contact portion reaching said impurity region of high concentration, by introducing p-type impurities into a portion of the p-type buried layer that serves as a portion of the collector of the vertical pnp transistor and into the p-type diffusion layer that works as an isolation layer or channel stop layer.

摘要翻译： 一种用于制造具有高hfe和高fT的高性能垂直pnp晶体管的半导体器件的方法，包括在p型掩埋层的一部分中形成高浓度的杂质区域并增加浓度的步骤 在用于隔离的扩散层中，形成到达p型掩埋层并用作垂直pnp晶体管的基极的n型阱区的步骤，以及用于形成垂直pnp晶体管的发射极的步骤 所述n型阱区域的一部分，并且为了形成垂直pnp晶体管的集电极接触部分，所述接触部分通过将p型杂质引入p型埋入部分中而到达所述高浓度的杂质区域 层，其用作垂直pnp晶体管的集电极的一部分，并且用作用作隔离层或沟道停止层的p型扩散层。

公开(公告)号：US08163817B2

公开(公告)日：2012-04-24

申请号：US12115148

申请日：2008-05-05

申请人： Yuuki Nishino ,  Hiroyuki Takuhara ,  Mikio Sanada ,  Daiji Okamura ,  Kenji Moribe ,  Satoshi Kudo

发明人： Yuuki Nishino ,  Hiroyuki Takuhara ,  Mikio Sanada ,  Daiji Okamura ,  Kenji Moribe ,  Satoshi Kudo

IPC分类号： B41J2/01 ,  B41J2/17 ,  B41J2/175 ,  C08G73/10 ,  C08J3/00 ,  C08K3/00 ,  C08K5/06 ,  C09D5/00 ,  C09D11/00 ,  C09J7/02 ,  G01D11/00 ,  H01B1/12

CPC分类号： C09D11/40 ,  B41M5/0017 ,  B41M7/0018 ,  C09D11/322

摘要： An aqueous ink to be used together with a pigment ink containing a pigment and a polymer, wherein the aqueous ink contains a reactive component for destabilizing the dispersion state of the pigment, the dynamic surface tension of the aqueous ink at a lifetime of 30 milliseconds is 41 mN/m or more, and the dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is from 28 mN/m or more to 38 mN/m or less as determined by a maximum bubble pressure method.

摘要翻译： 一种与含有颜料和聚合物的颜料墨水一起使用的水性墨水，其中，水性墨水含有用于使颜料的分散状态不稳定的反应性成分，在30毫秒的寿命期间，水性墨水的动态表面张力为 41mN / m以上，并且在500毫秒的寿命期间，水性墨水的动态表面张力通过最大气泡压力法测定为28mN / m以上至38mN / m以下。

公开(公告)号：US08123846B2

公开(公告)日：2012-02-28

申请号：US12389934

申请日：2009-02-20

申请人： Hideki Yamakami ,  Hiroshi Tomioka ,  Daiji Okamura ,  Mitsuru Ishii ,  Satoshi Kudo ,  Otome Mori

发明人： Hideki Yamakami ,  Hiroshi Tomioka ,  Daiji Okamura ,  Mitsuru Ishii ,  Satoshi Kudo ,  Otome Mori

IPC分类号： C09D11/02

CPC分类号： C09D11/328

摘要： An ink jet ink providing an image having excellent lightfastness and having sticking resistance and intermittent ejection stability. The ink jet ink is characterized by containing at least a compound represented by the following general formula (I) and a compound represented by the following general formula (II).

摘要翻译： 一种喷墨油墨，提供具有优异的耐光性和耐粘附性和间歇喷射稳定性的图像。 喷墨油墨的特征在于至少含有下述通式（I）表示的化合物和下述通式（II）表示的化合物。

公开(公告)号：US08007077B2

公开(公告)日：2011-08-30

申请号：US12333282

申请日：2008-12-11

申请人： Satoshi Kudo ,  Genji Inada

发明人： Satoshi Kudo ,  Genji Inada

IPC分类号： B41J2/05

CPC分类号： B41J2/1404 ,  B41J2002/14403 ,  B41J2002/14475 ,  B41J2202/11

摘要： An inkjet head includes a recording element substrate, on which sets of energy generating elements generating energy to discharge ink and a supply port supplying ink to discharge ports are arranged, and an orifice plate including the discharge ports. The sets include a set having a first supply port disposed at a first edge of the substrate and a set having a second supply port disposed at a second edge of the substrate opposite the first edge. The distance between the second edge and the second supply port is shorter than the distance between the first edge and the first supply port. A contact area between the substrate and second channel walls that form second ink channels communicating with the second supply port is larger than the contact area between the substrate and first channel walls that form first ink channels communicating with the first supply port.

摘要翻译： 喷墨头包括记录元件基板，在该记录元件基板上设置有产生排出墨水的能量的能量产生元件组和向排出口供给墨水的供给口，以及包括排出口的孔板。 这些组包括具有设置在基板的第一边缘处的第一供应端口和具有设置在与第一边缘相对的基板的第二边缘处的第二供应端口的组的组。 第二边缘和第二供给口之间的距离比第一边缘和第一供应口之间的距离短。 形成与第二供应口连通的第二墨水通道的基板和第二通道壁之间的接触区域大于基板与形成与第一供应口连通的第一墨水通道的第一通道壁之间的接触面积。

公开(公告)号：US20100225707A1

公开(公告)日：2010-09-09

申请号：US12160282

申请日：2008-05-07

申请人： Satoshi Kudo ,  Kenji Moribe

发明人： Satoshi Kudo ,  Kenji Moribe

IPC分类号： B41J2/05 ,  C09D11/02 ,  B41M5/00 ,  B41J2/175

CPC分类号： C09D11/328

摘要： An aqueous ink contains at least an aqueous medium, a surfactant, and a dye. The aqueous medium includes only water and at least one water-soluble organic compound(s) and the static surface tension of the aqueous medium is from 45 mN/m or more to 57 mN/m or less. The dynamic surface tension of the aqueous ink satisfies the following conditions: (1) The dynamic surface tension of the aqueous ink at a lifetime of 50 milliseconds is from 42 mN/m or more to less than 49 mN/m; (2) The dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is from 28 mN/m or more to 38 mN/m or less; and (3) A difference between the dynamic surface tension of the aqueous ink at a lifetime of 50 milliseconds and the dynamic surface tension of the aqueous ink at a lifetime of 500 milliseconds is 7 mN/m or more.

摘要翻译： 水性油墨至少含有水性介质，表面活性剂和染料。 水性介质仅包含水和至少一种水溶性有机化合物，水性介质的静态表面张力为45mN / m以上至57mN / m以下。 水性油墨的动态表面张力满足以下条件：（1）50毫秒的寿命的水性油墨的动态表面张力为42mN / m以上且小于49mN / m; （2）在500毫秒的寿命期间，水性墨水的动态表面张力为28mN / m以上至38mN / m以下; 和（3）在50毫秒的寿命期间的水性墨水的动态表面张力与500毫秒的寿命的水性墨水的动态表面张力之间的差为7mN / m以上。

公开(公告)号：US07735957B2

公开(公告)日：2010-06-15

申请号：US11735079

申请日：2007-04-13

申请人： Satoshi Kudo ,  Yukuo Yamaguchi

发明人： Satoshi Kudo ,  Yukuo Yamaguchi

IPC分类号： B41J2/165

CPC分类号： B41J2/16532

摘要： To provide a suction recovery method of an ink jet printing apparatus by which ink can be securely filled to an ink flow path and a nozzle while minimizing an amount of ink discharge during a suction recovery to prevent an adverse effect such as invited bubbles. The suction recovery method firstly performs the first suction step for generating a negative pressure for sucking a filter section for separating bubbles from the filter section. Thereafter, a second suction step is performed to generate a negative pressure for sucking an ink in the ink flow path and a large nozzle. Thereafter, a third suction step is performed to suck ink from a small nozzle.

摘要翻译： 为了提供喷墨打印设备的抽吸回收方法，通过该方法可以将油墨可靠地填充到油墨流路和喷嘴中，同时使吸入回收期间的油墨排出量最小化，以防止诸如邀请气泡的不利影响。 抽吸回收方法首先进行第一抽吸步骤，用于产生用于吸入用于从过滤器部分分离气泡的过滤器部分的负压。 此后，执行第二抽吸步骤以产生用于吸入墨流路中的墨的负压和大喷嘴。 此后，执行第三抽吸步骤以从小喷嘴吸取墨水。