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    Plasma processing apparatus
    14.
    发明授权
    Plasma processing apparatus 失效
    等离子体处理装置

    公开(公告)号：US5970907A

    公开(公告)日：1999-10-26

    申请号：US791460

    申请日：1997-01-27

    申请人： Satoshi Takai ,  Atsushi Yamagami ,  Nobuyuki Okamura

    发明人： Satoshi Takai ,  Atsushi Yamagami ,  Nobuyuki Okamura

    IPC分类号： C23C16/24 ,  C23C16/509 ,  H01J37/32 ,  C23C16/00

    CPC分类号： H01J37/32082 ,  C23C16/24 ,  C23C16/509

    摘要： To improve the processing rate and uniformity in a plasma processing for a substrate having a relatively large area, a plasma processing apparatus includes a reaction vessel which has a portion made of a dielectric member, which accommodates a film formation substrate, and which can be evacuated, an evacuating means and a gas supply means for supplying a predetermined gas into the reaction vessel, a cathode electrode arranged in a position outside the reaction vessel where the cathode electrode opposes the film formation substrate accommodated in the reaction vessel via the dielectric member, and a high frequency power supply means (a matching circuit and a high frequency power supply) for supplying high frequency power of 30 MHz to 300 MHz to the cathode electrode. The high frequency power of 30 MHz to 300 MHz is supplied to the cathode electrode to generate a plasma between the dielectric member and the film formation substrate.

    摘要翻译： 为了提高具有相对较大面积的基板的等离子体处理的加工速度和均匀性，等离子体处理装置包括反应容器，该反应容器具有由电介质部件构成的部分，其容纳成膜基板，并且能够被抽真空 排气装置和用于将预定气体供应到反应容器中的气体供给装置，设置在反应容器外侧位置处的阴极，阴极电极经由电介质构件与容纳在反应容器中的成膜​​基板相对，并且 用于将30MHz至300MHz的高频功率提供给阴极的高频电源装置（匹配电路和高频电源）。 将30MHz至300MHz的高频功率提供给阴极，以在电介质构件和成膜衬底之间产生等离子体。

    Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature
    15.
    发明授权
    Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature 失效
    在相对低的基板温度下通过偏压溅射法形成功能沉积膜的方法

    公开(公告)号：US5510011A

    公开(公告)日：1996-04-23

    申请号：US362750

    申请日：1994-12-22

    申请人： Nobuyuki Okamura ,  Atsushi Yamagami

    发明人： Nobuyuki Okamura ,  Atsushi Yamagami

    IPC分类号： C23C14/34 ,  H01J37/34 ,  H01L21/203 ,  H01L21/331

    CPC分类号： C23C14/345 ,  C23C14/34 ,  H01J37/32706 ,  H01J37/3405 ,  H01J37/3473 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02631 ,  H01L29/66287

    摘要： In a bias sputtering method comprising generating a plasma of a sputtering gas between a target electrode having a target thereon and a substrate electrode having a substrate for film formation thereon in a vacuum vessel with the use of a high frequency energy from a high frequency power source and sputtering said target with said plasma while applying a direct current voltage from a direct current power source to at least one of said target electrode or said substrate electrode thereby causing the formation of a film on said substrate, the improvement which comprises alternately repeating a deposition step and a non-deposition step, said deposition step comprising sputtering said target with said plasma while irradiating said substrate with ions of said plasma while depositing a film on said substrate, and said non-deposition step comprising irradiating said substrate with ions of said plasma without sputtering said target, thereby forming a high quality functional deposited film on said substrate.

    摘要翻译： 在一种偏压溅射方法中，包括在真空容器内使用来自高频电源的高频能产生溅射气体的等离子体，所述溅射气体的等离子体在其上具有目标靶的目标电极和具有用于成膜的基板的基板电极之间 并用所述等离子体溅射所述靶，同时从直流电源施加直流电压至所述目标电极或所述衬底电极中的至少一个，由此导致在所述衬底上形成膜，其改进包括交替地重复沉积 步骤和非沉积步骤，所述沉积步骤包括用所述等离子体溅射所述靶，同时用所述等离子体的离子辐照所述衬底，同时在所述衬底上沉积膜，并且所述非沉积步骤包括用所述等离子体的离子照射所述衬底 而不溅射所述靶，从而在s上形成高质量的功能沉积膜 辅助底物。