-
公开(公告)号：US5603848A
公开(公告)日：1997-02-18
申请号：US367641
申请日：1995-01-03
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译： 使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。 可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。 然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53） ）和触点（49,56,64）。
-
公开(公告)号：US5504330A
公开(公告)日：1996-04-02
申请号：US343269
申请日：1994-11-22
CPC分类号： H01L37/025 , G01J5/34
摘要： The invention described forms improved ferroelectric (or pyroelectric) layer by adding lead to an original perovskite layer having an original ferroelectric (or pyroelectric) critical grain size, then forming a layer of the lead enhanced perovskite layer having an average grain size less than the original ferroelectric (or pyroelectric) critical grain size whereby the remanent polarization (or pyroelectric figure of merit) of the layer is substantially greater than the remanent polarization (or pyroelectric figure of merit) of the original perovskite layer with an average grain size similar to the average grain size of the layer. The critical ferroelectric (or pyroelectric) grain size, as used herein, means the largest grain size such that the remanent polarization (or pyroelectric figure of merit) starts to rapidly decrease with decreasing grain sizes. Preferably, n-type lead enhanced perovskite layer is doped with one or more acceptor dopants whereby the resistivity is substantially increased. Preferably, p-type lead enhanced perovskite layer is doped with one or more donor dopants whereby the resistivity is substantially increased. Preferably, the original perovskite layer has a chemical composition ABO.sub.3, where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements. Structures containing an improved ferroelectric (or pyroelectric) layer include a layer of lead enhanced perovskite layer with average grain size less than the original ferroelectric (or pyroelectric) critical grain size formed on the surface of a substrate. Other structures include such a layer of lead enhanced layer interposed between two electrically conducting layers.
摘要翻译： 本发明描述了通过将铅添加到具有原始铁电（或热电）临界晶粒尺寸的原始钙钛矿层中形成改进的铁电（或热电）层，然后形成具有小于原始强度的平均晶粒尺寸的铅增强的钙钛矿层的层 铁电（或热电）临界晶粒尺寸，其中该层的剩余极化（或热释电特性）基本上大于原始钙钛矿层的剩余极化（或热释电特性），平均晶粒尺寸类似于平均值 层的晶粒尺寸。 如本文所用，临界铁电（或热电）晶粒尺寸是指最大的晶粒尺寸，使得剩余极化（或热释电品质）开始随着晶粒尺寸的减小而迅速降低。 优选地，n型铅增强的钙钛矿层掺杂有一种或多种受体掺杂剂，由此电阻率显着增加。 优选地，p型铅增强的钙钛矿层掺杂有一个或多个施主掺杂剂，由此电阻率显着增加。 优选地，原始钙钛矿层具有化学组成ABO 3，其中A是一个或多个一价，二价或三价元素，B是一种或多种五价，四价，三价或二价元素。 包含改进的铁电（或热电）层的结构包括平均粒径小于在基底表面上形成的原始铁电（或热电）临界晶粒尺寸的铅增强的钙钛矿层。 其他结构包括插入在两个导电层之间的这种铅增强层。
-
13.发明授权
公开(公告)号：US5403437A
公开(公告)日：1995-04-04
申请号：US148773
申请日：1993-11-05
IPC分类号： B05D1/40 , B05D7/00 , B32B27/30 , C09D127/12 , G03F7/004 , G03F7/085 , H01L21/312 , H01L21/822 , H01L27/04 , B44C1/22 , B29C37/00
CPC分类号： G03F7/085 , G03F7/0046
摘要： This is a device and method of forming such, wherein the device has an amorphous "TEFLON" (TFE AF) layer. The method comprising: depositing an TFE AF layer 36 on a substrate; combining a fluorosurfactant with a first material to produce a second material 38; and depositing the second material 38 on the TFE AF layer 36. The method may include: patterning and etching the second material; removing the second material; and forming a third material 42 on the TFE AF layer 44. The third material may be a metal or a semiconductor. The ZFSNF fluorosurfactant may be combined with a photoresist and then patterned and etched. The TFE AF layer may also be heated. A second coating of the second material may also be added.
摘要翻译： 这是一种形成这种装置和方法，其中该装置具有非晶“TEFLON”（TFE AF）层。 该方法包括：在衬底上沉积TFE AF层36; 将含氟表面活性剂与第一材料组合以产生第二材料38; 并将第二材料38沉积在TFE AF层36上。该方法可以包括：图案化和蚀刻第二材料; 去除第二种材料; 并在TFE AF层44上形成第三材料42.第三材料可以是金属或半导体。 ZFSNF含氟表面活性剂可与光致抗蚀剂组合，然后进行图案化和蚀刻。 TFE AF层也可以被加热。 还可以添加第二材料的第二涂层。
-
公开(公告)号：US5312516A
公开(公告)日：1994-05-17
申请号：US041302
申请日：1993-03-31
CPC分类号： C04B41/5353 , G03F7/2041 , H01L21/31111 , H01L28/55
摘要： A tantalum pentoxide substrate 34 immersed in a liquid ambient (e.g. 10% hydrofluoric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the Ta.sub.2 O.sub.5 substrate 34. An etch mask (e.g. organic photoresist 32) may be positioned between the radiation source 20 and the substrate 34. The Ta.sub.2 O.sub.5 substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the Ta.sub.2 O.sub.5 is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
摘要翻译： 浸渍在液体环境（例如10％氢氟酸30）中并用辐射源（例如，200瓦汞氙弧灯20）产生的辐射（例如准直可见/紫外线辐射24）照射的五氧化二钽基材34。 对准直辐射24基本上透明的窗26允许辐射能到达Ta 2 O 5衬底34.蚀刻掩模（例如有机光致抗蚀剂32）可以位于辐射源20和衬底34之间.Ta 2 O 5衬底34和 液体环境30保持在标称温度（例如25℃）。 在没有照明的情况下，Ta2O5不会受到液体环境的明显腐蚀。 在照射时，蚀刻速率显着增加。
-
公开(公告)号：US5792377A
公开(公告)日：1998-08-11
申请号：US460281
申请日：1995-06-02
摘要： An array of thermal sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).
-
16.发明授权
公开(公告)号：US5581436A
公开(公告)日：1996-12-03
申请号：US482101
申请日：1995-06-07
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive fire can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material. These structures my also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译： 本发明的优选实施方案包括使高介电常数材料（例如钛酸钡锶38）与电极接触的薄的非反应性膜（例如铂36）。 薄的非反应性膜在高介电常数材料层和电极基底（例如钯34）之间提供稳定的导电界面。 与标准薄膜层相反，薄的非反应性膜通常小于50nm厚，优选小于35nm厚，更优选在5nm和25nm之间，最优选在10nm和20nm之间。 薄的无反应性火可以从所使用的材料的优点中受益，同时避免或最小化许多它们的缺点。 薄的非反应性膜通常比标准薄膜层便宜得多，因为可以使用更少的材料，而不会显着影响与HDC材料接触的电极的表面积。 这些结构我也可用于多层电容器和其他薄膜铁电器件如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。
-
17.发明授权
公开(公告)号：US5536965A
公开(公告)日：1996-07-16
申请号：US479378
申请日：1995-06-07
IPC分类号： H01L27/146 , H01L37/02 , H01L31/00 , H01L31/058
CPC分类号： H01L27/1465 , H01L37/02 , Y10T29/49169
摘要： Thermal isolation mesas 36 comprising a porous material 64 are used to thermally insulate sensing integrated circuitry 44 from pixels 34 of an uncooled IR detector hybrid system 30. The porous material 64 is preferably a silicon-dioxide xerogel. The mesas 36 may also comprise a protective film 66.
摘要翻译： 包括多孔材料64的隔热台面36用于将感测集成电路44与未经IR的IR检测器混合系统30的像素34热绝缘。多孔材料64优选为二氧化硅干凝胶。 台面36还可以包括保护膜66。
-
公开(公告)号：US06204069B1
公开(公告)日：2001-03-20
申请号：US08317108
申请日：1994-10-03
IPC分类号： H01L2100
CPC分类号： H01G4/008 , H01L21/31691 , H01L27/11502 , H01L28/56 , Y10S257/917 , Y10T29/43 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a conductive lightly donor doped perovskite layer (e.g. lightly La doped BST 34), and a high-dielectric-constant material layer (e.g. undoped BST 36) overlaying the conductive lightly donor doped perovskite layer. The conductive lightly donor doped perovskite layer provides a substantially chemically and structurally stable electrical connection to the high-dielectric-constant material layer. A lightly donor doped perovskite generally has much less resistance than undoped, acceptor doped, or heavily donor doped HDC materials. The amount of donor doping to make the material conductive (or resistive) is normally dependent on the process conditions (e.g. temperature, atmosphere, grain size, film thickness and composition). This resistivity may be further decreased if the perovskite is exposed to reducing conditions. The lightly donor doped perovskite can be deposited and etched by effectively the same techniques that are developed for the high-dielectric-constant material. The same equipment may used to deposit and etch both the perovskite electrode and the dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
-
19.发明授权Structure and method including dry etching techniques for forming an array of thermal sensitive elements 失效包括用于形成热敏元件阵列的干蚀刻技术的结构和方法
公开(公告)号：US5647946A
公开(公告)日：1997-07-15
申请号：US463170
申请日：1995-06-05
IPC分类号： G01J1/02 , G01J5/34 , H01L21/302 , H01L21/3065 , H01L27/14 , H01L37/02 , H01L21/00
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/942
摘要： An array of thermal sensor elements (16) is formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of metal contacts (60) is formed to define masked (61) and unmasked (68) regions of the substrate (46). A second layer of metal contacts (62) is formed on the first layer of contacts (60). A radiation etch mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). A dry-etch mask layer (74) is formed to encapsulate the exposed portions of the first layer of contacts (60) and radiation etch mask layer (66). An initial portion of each unmasked region (68) is etched using a dry-etch process. The remaining portions of the unmasked regions (68) are exposed to an etchant (70) and irradiated with electromagnetic energy to substantially increase the reactivity between the remaining portions and the etchant (70). During such irradiation, the etchant (70) etches the remaining portions substantially faster than the first layer of contacts (60) and the radiation etch mask layer (66).
摘要翻译： 一组热传感器元件（16）由具有红外线吸收器和附接到其上的公共电极组件（18）的热电基片（46）形成。 第一层金属触点（60）被形成以限定衬底（46）的掩模（61）和未屏蔽（68）区域。 第二层金属触点（62）形成在第一层触点（60）上。 形成辐射蚀刻掩模层（66）以封装第二层触点（62）的暴露部分。 形成干蚀刻掩模层（74）以封装第一层触点（60）和辐射蚀刻掩模层（66）的暴露部分。 使用干蚀刻工艺蚀刻每个未掩模区域（68）的初始部分。 未掩蔽区域（68）的剩余部分暴露于蚀刻剂（70）并用电磁能照射，以显着增加其余部分和蚀刻剂（70）之间的反应性。 在这种照射期间，蚀刻剂（70）基本上比第一层触点（60）和辐射蚀刻掩模层（66）更快地蚀刻剩余部分。
-
公开(公告)号：US5638599A
公开(公告)日：1997-06-17
申请号：US412662
申请日：1995-03-29
IPC分类号： H01L27/146 , H01L37/02 , H01R9/00
CPC分类号： H01L27/1465 , H01L37/02 , Y10T29/49169
摘要： Thermal isolation mesas 36 comprising a porous material 64 are used to thermally insulate sensing integrated circuitry 44 from pixels 34 of an uncooled IR detector hybrid system 30. The porous material 64 is preferably a silicon-dioxide xerogel. The mesas 36 may also comprise a protective film 66.
摘要翻译： 包括多孔材料64的隔热台面36用于将感测集成电路44与未经IR的IR检测器混合系统30的像素34热绝缘。多孔材料64优选为二氧化硅干凝胶。 台面36还可以包括保护膜66。
-
-
-
-
-
-
-
-
-
搜索结果
58 条记录 (耗时 0.02 秒)