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公开(公告)号：US5312516A
公开(公告)日：1994-05-17
申请号：US041302
申请日：1993-03-31
CPC分类号： C04B41/5353 , G03F7/2041 , H01L21/31111 , H01L28/55
摘要： A tantalum pentoxide substrate 34 immersed in a liquid ambient (e.g. 10% hydrofluoric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the Ta.sub.2 O.sub.5 substrate 34. An etch mask (e.g. organic photoresist 32) may be positioned between the radiation source 20 and the substrate 34. The Ta.sub.2 O.sub.5 substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the Ta.sub.2 O.sub.5 is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
摘要翻译： 浸渍在液体环境（例如10％氢氟酸30）中并用辐射源（例如，200瓦汞氙弧灯20）产生的辐射（例如准直可见/紫外线辐射24）照射的五氧化二钽基材34。 对准直辐射24基本上透明的窗26允许辐射能到达Ta 2 O 5衬底34.蚀刻掩模（例如有机光致抗蚀剂32）可以位于辐射源20和衬底34之间.Ta 2 O 5衬底34和 液体环境30保持在标称温度（例如25℃）。 在没有照明的情况下，Ta2O5不会受到液体环境的明显腐蚀。 在照射时，蚀刻速率显着增加。
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公开(公告)号：US5238530A
公开(公告)日：1993-08-24
申请号：US871863
申请日：1992-04-20
IPC分类号： C04B41/53 , C04B41/91 , H01L21/02 , H01L21/311
CPC分类号： H01L28/55 , C04B41/5353 , C04B41/91 , H01L21/31111
摘要： A titanate substrate (e.g. lead zirconate titanate 34) is immersed in a liquid ambient (e.g. 12 molar concentration hydrochloric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the titanate substrate 34. An etch mask 32 may be positioned between the radiation source 20 and the substrate 34. The titanate substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the titanate is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
摘要翻译： 将钛酸酯基材（例如锆钛酸铅34）浸入液体环境（例如12摩尔浓度的盐酸30）中，并用辐射源（例如200瓦汞氙）产生的辐射（例如准直的可见/紫外线辐射24）照射 弧光灯20）。 对准直辐射24基本上透明的窗口26允许辐射能量到达钛酸盐衬底34.蚀刻掩模32可以位于辐射源20和衬底34之间。钛酸盐衬底34和液态环境30被保持 在标称温度（例如25℃）下。 在没有照明的情况下，钛酸盐不被液体环境明显腐蚀。 在照射时，蚀刻速率显着增加。
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公开(公告)号：US5201989A
公开(公告)日：1993-04-13
申请号：US872701
申请日：1992-04-20
IPC分类号： B01J19/12 , C01G33/00 , C04B41/53 , C04B41/91 , C23F1/04 , C23F1/30 , H01L21/02 , H01L21/311
CPC分类号： C04B41/009 , C04B41/5353 , C04B41/91 , H01L21/31111 , H01L28/40 , C04B2111/00387 , H01L28/55
摘要： A niobium pentoxide substrate 34 immersed in a liquid ambient (e.g. 10% hydrofluoric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the Nb.sub.2 O.sub.5 substrate 34. An etch mask (e.g. organic photoresist 32) may be positioned between the radiation source 20 and the substrate 34. The Nb.sub.2 O.sub.5 substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the Nb.sub.2 O.sub.5 is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
摘要翻译： 浸渍在液体环境（例如10％氢氟酸30）中并用辐射源（例如，200瓦汞氙弧灯20）产生的辐射（例如准直的可见/紫外线辐射24）照射的五氧化二铌衬底34。 对准直辐射24基本透明的窗口26允许辐射能量到达Nb 2 O 5衬底34.蚀刻掩模（例如有机光致抗蚀剂32）可以位于辐射源20和衬底34之间.Nb 2 O 5衬底34和 液体环境30保持在标称温度（例如25℃）。 在没有照明的情况下，Nb 2 O 5不被液体环境明显腐蚀。 在照射时，蚀刻速率显着增加。
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公开(公告)号：US5520992A
公开(公告)日：1996-05-28
申请号：US81484
申请日：1993-06-22
IPC分类号： H01B1/06 , H01G4/008 , H01G4/012 , H01G4/10 , H01G4/232 , H01L21/02 , H01L21/822 , H01L27/04 , C23C14/06
摘要： Novel methods of forming capacitors containing high dielectric materials are disclosed. Capacitors are made by forming a layer of conductive metal nitride (e.g. ruthenium nitride, 28), then forming a layer of a high dielectric constant material (e.g. barium strontium titanate, 30) on the metal nitride layer, then forming a layer of a non-metal containing electrically conductive compound (e.g. ruthenium oxide, 32) on the layer of high dielectric constant material. Typically, the high dielectric constant material is a transition metal oxide, a titanate, a titanate doped with one or more rare earth elements, a titanate doped with one or more alkaline earth metals, or combinations thereof. Preferably, the conductive compound is ruthenium nitride, ruthenium dioxide, tin nitride, tin oxide, titanium nitride, titanium monoxide, or combinations thereof. The conductive compound may be doped to increase its electrical conductivity.
摘要翻译： 公开了形成含有高介电材料的电容器的新方法。 电容器通过形成一层导电金属氮化物（例如，氮化钌28），然后在金属氮化物层上形成一层高介电常数材料（例如钛酸钡锶30），然后形成一层非金属 在高介电常数材料层上含有导电化合物（例如氧化钌32）的金属。 通常，高介电常数材料是过渡金属氧化物，钛酸盐，掺杂有一种或多种稀土元素的钛酸盐，掺杂有一种或多种碱土金属的钛酸盐或其组合。 优选地，导电化合物是氮化钌，二氧化钌，氮化锡，氧化锡，氮化钛，一氧化钛或其组合。 可以掺杂导电化合物以增加其导电性。
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公开(公告)号：US5695569A
公开(公告)日：1997-12-09
申请号：US192204
申请日：1994-02-04
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： C23F4/00 , H01L21/00 , H01L21/306 , B08B3/04 , B08B7/04
CPC分类号： H01L21/02052 , B08B7/0057 , C23F4/00 , H01L21/67057
摘要： Generally, and in one form of the invention, a method is presented for the photo-stimulated removal of reacted metal contamination 16 from a surface 11, comprising the steps of: covering the surface with a liquid ambient 14; exciting the reacted metal contamination 16 and/or the liquid ambient 14 by photo-stimulation sufficiently to allow reaction of the reacted metal contaminantion 16 with the liquid ambient 14 to form metal products; and removing the liquid ambient 14 and the metal products from the surface 11. Other methods are also disclosed.
摘要翻译： 通常，在本发明的一种形式中，提出了一种从表面11光激发除去反应的金属污染物16的方法，包括以下步骤：用液体环境14覆盖表面; 通过足够的光刺激激发反应的金属污染物16和/或液体环境14，以使反应的金属污染物16与液体环境14反应形成金属产物; 并从表面11除去液体环境14和金属产品。还公开了其它方法。
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公开(公告)号：US5565179A
公开(公告)日：1996-10-15
申请号：US473457
申请日：1995-06-07
申请人： Monte A. Douglas
发明人： Monte A. Douglas
CPC分类号： H01L21/67028 , B08B6/00 , Y10S422/906 , Y10T436/25375
摘要： An electrostatic decontamination method and decontamination device (10) is disclosed for decontaminating the surface of a semiconductor substrate. The decontamination device (10) includes particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles. Decontamination device (10) also includes substrate biasing device (12) for creating a charge accumulation layer (14) at the top of semiconductor substrate (16) so that the charge accumulation layer (14) has the same charge sign as the ionized particles. In addition, the invention analytically characterizes particles using contaminating particle isolator (44) which contains a particle ionizing device (24) that charges contaminating particles (26) on the surface of semiconductor substrate (16) thereby creating ionized particles. Contaminating particle isolator (44) includes substrate biasing device (12) operable to create charge accumulation layer (14) at the top of semiconductor substrate (16) so that the charge accumulation layer (14) has the same charge sign as the ionized particles. Contaminating particle isolator (44) also includes particle collector (46) that collects the ionized particles. This permits characterizing the particles to determine their chemical composition.
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公开(公告)号：US5000820A
公开(公告)日：1991-03-19
申请号：US453521
申请日：1989-12-20
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： H01L21/465
CPC分类号： H01L21/465
摘要： A workpiece (W) is placed within a reaction chamber (12). The chamber (12) is evacuated (18) to a relatively low pressure such as 10 torr. An organic or nitrogen-based free radical precursor compound (36) is introduced into the reactor (12). A volume of the chamber (12) adjacent to the workpiece (W) is illuminated (28) with energy made up of one or more wavelengths in the range of about 200 to about 1300 nanometers such that an exposed surface (23) of the layer is illuminated (28). The free radical precursor compound is photodissociated in response to the illumination. Resulting free radicals are reacted with the exposed surface (23) of the workpiece (W) to create volatile compounds, which are removed from the chamber through a vacuum source (18).
摘要翻译： 工件（W）被放置在反应室（12）内。 将室（12）抽空（18）至相当低的压力，例如10托。 将有机或氮基自由基前体化合物（36）引入反应器（12）中。 邻近工件（W）的腔室（12）的体积用约200至约1300纳米范围内的一个或多个波长的能量照射（28），使得层的暴露表面（23） 被照亮（28）。 自由基前体化合物响应于照明而光分解。 所产生的自由基与工件（W）的暴露表面（23）反应以产生挥发性化合物，其通过真空源（18）从室除去。
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公开(公告)号：US4915777A
公开(公告)日：1990-04-10
申请号：US318035
申请日：1989-03-02
申请人： Rhett B. Jucha , Monte A. Douglas , Cecil J. Davis
发明人： Rhett B. Jucha , Monte A. Douglas , Cecil J. Davis
IPC分类号： C23C16/517 , C23F4/00 , H01J37/32 , H01L21/00 , H01L21/3213 , H01L21/677
CPC分类号： H01L21/67748 , C23C16/517 , C23F4/00 , H01J37/32339 , H01J37/32743 , H01J37/32788 , H01L21/32136 , H01L21/67069 , H01L21/67115 , H01L21/67751 , H01J2237/022 , H01J2237/184 , H01J2237/3345
摘要： A process wherein a thin film of tungsten is anisotropically etched under plasma bombardment conditions by using a feed gas mixture which includes an etchant and a carbon containing gas. This chemistry provides anisotropic high rate fluoro-etching with good selectivity to photoresist.
摘要翻译： 一种其中通过使用包括蚀刻剂和含碳气体的进料气体混合物在等离子体轰击条件下各向异性地蚀刻钨的薄膜的方法。 该化学提供各向异性高速氟蚀刻，对光致抗蚀剂具有良好的选择性。
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公开(公告)号：US4758305A
公开(公告)日：1988-07-19
申请号：US838965
申请日：1986-03-11
IPC分类号： H01L21/28 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/8234 , H01L27/088 , B44C1/22 , B29C37/00 , C03C15/00 , C03C25/06
CPC分类号： H01L21/31116 , H01L21/0274 , H01L21/31144 , H01L21/76804 , Y10S438/948 , Y10S438/952
摘要： A method for patterning small-geometry contacts with sloped sidewalls in integrated circuit fabrication. A multilayer resist process is used, and the spacer layer is undercut by overexposure and overdevelopment at the pattern transfer stage. This provides a cantilever etch mask structure, without the need to use any hardmask layers.
摘要翻译： 在集成电路制造中用于图形具有倾斜侧壁的小几何接触的方法。 使用多层抗蚀剂工艺，并且间隔层在图案转移阶段被过度曝光和过度发展所削弱。 这提供了悬臂蚀刻掩模结构，而不需要使用任何硬掩模层。
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公开(公告)号：US4702795A
公开(公告)日：1987-10-27
申请号：US730701
申请日：1985-05-03
申请人： Monte A. Douglas
发明人： Monte A. Douglas
IPC分类号： H01L27/10 , H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/8242 , H01L27/108 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/30655 , H01L21/3065 , H01L21/3085 , Y10S148/05
摘要： A plasma dry etch process for etching deep trenches in single crystal silicon material with controlled wall profile, for trench capacitors or trench isolation structures. HCl is used as an etchant under RIE conditions with a SiO2 hard mask. The SiO2 hard mask is forward sputtered during the course of the Si etch so as to slowly deposit SiOx (x
摘要翻译： 用于蚀刻具有受控壁分布的单晶硅材料的深沟槽的等离子体干蚀刻工艺，用于沟槽电容器或沟槽隔离结构。 在RIE条件下，用SiO2硬掩模将HCl用作蚀刻剂。 SiO 2硬掩模在Si蚀刻过程中向前溅射，以便在硅沟槽的侧壁上缓慢沉积SiO x（x <2）。 由于侧壁沉积物在靠近侧壁的沟槽底部阴影蚀刻，因此这种逐渐积累的效果是产生正倾斜的沟槽侧壁，而不会“沟槽”沟槽的底部，并且没有线宽损耗。 该方法避免了掩模底切的现有技术问题，其在随后的再填充处理期间产生空隙，并且在沟槽的底部开槽，这对薄的电容器电介质完整性是非常有害的。
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