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公开(公告)号：US5312516A
公开(公告)日：1994-05-17
申请号：US041302
申请日：1993-03-31
CPC分类号： C04B41/5353 , G03F7/2041 , H01L21/31111 , H01L28/55
摘要： A tantalum pentoxide substrate 34 immersed in a liquid ambient (e.g. 10% hydrofluoric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the Ta.sub.2 O.sub.5 substrate 34. An etch mask (e.g. organic photoresist 32) may be positioned between the radiation source 20 and the substrate 34. The Ta.sub.2 O.sub.5 substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the Ta.sub.2 O.sub.5 is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
摘要翻译： 浸渍在液体环境（例如10％氢氟酸30）中并用辐射源（例如，200瓦汞氙弧灯20）产生的辐射（例如准直可见/紫外线辐射24）照射的五氧化二钽基材34。 对准直辐射24基本上透明的窗26允许辐射能到达Ta 2 O 5衬底34.蚀刻掩模（例如有机光致抗蚀剂32）可以位于辐射源20和衬底34之间.Ta 2 O 5衬底34和 液体环境30保持在标称温度（例如25℃）。 在没有照明的情况下，Ta2O5不会受到液体环境的明显腐蚀。 在照射时，蚀刻速率显着增加。
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公开(公告)号：US5238530A
公开(公告)日：1993-08-24
申请号：US871863
申请日：1992-04-20
IPC分类号： C04B41/53 , C04B41/91 , H01L21/02 , H01L21/311
CPC分类号： H01L28/55 , C04B41/5353 , C04B41/91 , H01L21/31111
摘要： A titanate substrate (e.g. lead zirconate titanate 34) is immersed in a liquid ambient (e.g. 12 molar concentration hydrochloric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the titanate substrate 34. An etch mask 32 may be positioned between the radiation source 20 and the substrate 34. The titanate substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the titanate is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
摘要翻译： 将钛酸酯基材（例如锆钛酸铅34）浸入液体环境（例如12摩尔浓度的盐酸30）中，并用辐射源（例如200瓦汞氙）产生的辐射（例如准直的可见/紫外线辐射24）照射 弧光灯20）。 对准直辐射24基本上透明的窗口26允许辐射能量到达钛酸盐衬底34.蚀刻掩模32可以位于辐射源20和衬底34之间。钛酸盐衬底34和液态环境30被保持 在标称温度（例如25℃）下。 在没有照明的情况下，钛酸盐不被液体环境明显腐蚀。 在照射时，蚀刻速率显着增加。
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公开(公告)号：US5201989A
公开(公告)日：1993-04-13
申请号：US872701
申请日：1992-04-20
IPC分类号： B01J19/12 , C01G33/00 , C04B41/53 , C04B41/91 , C23F1/04 , C23F1/30 , H01L21/02 , H01L21/311
CPC分类号： C04B41/009 , C04B41/5353 , C04B41/91 , H01L21/31111 , H01L28/40 , C04B2111/00387 , H01L28/55
摘要： A niobium pentoxide substrate 34 immersed in a liquid ambient (e.g. 10% hydrofluoric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the Nb.sub.2 O.sub.5 substrate 34. An etch mask (e.g. organic photoresist 32) may be positioned between the radiation source 20 and the substrate 34. The Nb.sub.2 O.sub.5 substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the Nb.sub.2 O.sub.5 is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.
摘要翻译： 浸渍在液体环境（例如10％氢氟酸30）中并用辐射源（例如，200瓦汞氙弧灯20）产生的辐射（例如准直的可见/紫外线辐射24）照射的五氧化二铌衬底34。 对准直辐射24基本透明的窗口26允许辐射能量到达Nb 2 O 5衬底34.蚀刻掩模（例如有机光致抗蚀剂32）可以位于辐射源20和衬底34之间.Nb 2 O 5衬底34和 液体环境30保持在标称温度（例如25℃）。 在没有照明的情况下，Nb 2 O 5不被液体环境明显腐蚀。 在照射时，蚀刻速率显着增加。
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4.发明授权Donor doped perovskites for thin-film ferroelectric and pyroelectric devices 失效供体掺杂的钙钛矿用于薄膜铁电和热释电装置
公开(公告)号：US5888659A
公开(公告)日：1999-03-30
申请号：US477722
申请日：1995-06-07
IPC分类号： C04B35/465 , B32B17/00
CPC分类号： C04B35/465
摘要： The invention forms improved ferroelectric (or pyroelectric) material by doping an intrinsic perovskite material having an intrinsic ferroelectric (or pyroelectric) critical grain size with one or more donor dopants, then forming a layer of the donor doped perovskite material having an average grain size less than the intrinsic ferroelectric (or pyroelectric) critical gran size whereby the remanent polarization (or pyroelectric figure of merit) of the layer is substantially greater than the remanent polarization (or pyroelectric figure of merit) of the intrinsic perovskite material with an average grain size similar to the average grain size of the layer. The critical ferroelectric (or pyroelectric) grain size, as used herein, means the largest grain size such that the remanent polarization (or pyroelectric figure of merit) starts to rapidly decrease with decreasing grain sizes. Preferably, the donor doped perovskite material is further doped with one or more acceptor dopants to form a donor acceptor doped perovskite material whereby the resistivity is substantially increased. Preferably, the intrinsic perovskite material has a chemical composition AB03, where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements. Structures containing an improved ferroelectric (or pyroelectric) material include a layer of donor doped perovskite material with average grain size less than the intrinsic ferroelectric (or pyroelectric) critical grain size formed on the surface of a substrate. Other structures include such a layer of donor doped material interposed between two electrically conducting layers.
摘要翻译： 本发明通过将具有本征铁电（或热电）临界晶粒尺寸的固有钙钛矿材料与一种或多种施主掺杂剂掺杂形成改进的铁电（或热释电）材料，然后形成具有平均晶粒尺寸的施主掺杂钙钛矿材料层 比本征铁电（或热电）临界颗粒大小，其中层的剩余极化（或热释电特性）基本上大于固有钙钛矿材料的剩余极化（或热释电特性），其平均晶粒尺寸类似 到该层的平均晶粒尺寸。 如本文所用，临界铁电（或热电）晶粒尺寸是指最大的晶粒尺寸，使得剩余极化（或热释电品质）开始随着晶粒尺寸的减小而迅速降低。 优选地，施主掺杂的钙钛矿材料进一步掺杂有一种或多种受体掺杂剂以形成掺杂掺杂的钙钛矿材料的受体掺杂物，由此电阻率显着增加。 优选地，本征钙钛矿材料具有化学组成AB03，其中A是一个或多个一价，二价或三价元素，B是一种或多种五价，四价，三价或二价元素。 包含改进的铁电（或热释电）材料的结构包括施主掺杂的钙钛矿材料层，其平均晶粒尺寸小于在衬底表面上形成的本征铁电（或热电）临界晶粒尺寸。 其他结构包括介于两个导电层之间的施主掺杂材料层。
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公开(公告)号：US5654580A
公开(公告)日：1997-08-05
申请号：US464981
申请日：1995-06-05
IPC分类号： C23F1/02 , G01J5/20 , H01L37/02 , H01L31/058
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译： 使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。 可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。 然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53） ）和触点（49,56,64）。
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6.发明授权Electrodes comprising conductive perovskite-seed layers for perovskite dielectrics 失效电极包括用于钙钛矿电介质的导电钙钛矿种子层
公开(公告)号：US5626906A
公开(公告)日：1997-05-06
申请号：US604268
申请日：1996-02-21
摘要： A preferred embodiment of this invention comprises a perovskite-seed layer (e.g. calcium ruthenate 40) between a conductive oxide layer (e.g. ruthenium oxide 36) and a perovskite dielectric material (e.g. barium strontium titanate 42), wherein the perovskite-seed layer and the conductive oxide layer each comprise the same metal. The metal should be conductive in its metallic state and should remain conductive when partially or fully oxidized. Generally, the perovskite-seed layer has a perovskite or perovskite-like crystal structure and lattice parameters which are similar to the perovskite dielectric layer formed thereon. At a given deposition temperature, the crystal quality and other properties of the perovskite dielectric will generally be enhanced by depositing it on a surface having a similar crystal structure. Undesirable crystal structure formation will generally be minimized and lower processing temperatures may be used to deposit the perovskite dielectric layer. Another benefit of this electrode system is that the perovskite-seed layer should do little or no reduction of the perovskite dielectric layer.
摘要翻译： 本发明的优选实施方案包括在导电氧化物层（例如氧化钌36）和钙钛矿电介质材料（例如钛酸钡锶42）之间的钙钛矿种子层（例如，钌酸钙40），其中钙钛矿种子层和 导电氧化物层各自包含相同的金属。 金属应在金属状态下导电，并且当部分或完全氧化时应保持导电性。 通常，钙钛矿种子层具有类似于其上形成的钙钛矿电介质层的钙钛矿或钙钛矿型晶体结构和晶格参数。 在给定的沉积温度下，钙钛矿电介质的晶体质量和其它性质通常会通过将其沉积在具有类似晶体结构的表面上来增强。 通常将不期望的晶体结构形成最小化，并且可以使用较低的加工温度来沉积钙钛矿电介质层。 该电极系统的另一个优点是钙钛矿种子层应该很少或不会减少钙钛矿电介质层。
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7.发明授权Semiconductor structures using high-dielectric-constant materials and an adhesion layer 失效使用高介电常数材料和粘附层的半导体结构
公开(公告)号：US5612574A
公开(公告)日：1997-03-18
申请号：US476948
申请日：1995-06-06
IPC分类号： H01L21/3205 , H01L21/02 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L23/52 , H01L23/522 , H01L27/04 , H01L27/108 , H01L29/12 , H01G4/10 , H01L29/68 , H01L29/92
CPC分类号： H01L27/10852 , H01L28/55 , H01L28/60
摘要： A semiconductor device (10) is illustrated, which is formed on an active region (14) of a semiconductor substrate (12). Device (10) comprises a conductive plug (20) and a barrier layer (22) formed in an opening in an interlevel isolation layer (18). An inner electrode (24) is caused to adhere to the interlevel isolation layer (18) through the use of an adhesion layer (26). High-dielectric-constant layer (28) and an outer electrode (30) are formed outwardly from inner electrode (24).
摘要翻译： 示出了半导体器件（10），其形成在半导体衬底（12）的有源区（14）上。 装置（10）包括形成在层间隔离层（18）中的开口中的导电塞（20）和阻挡层（22）。 通过使用粘合层（26）使内部电极（24）粘附到层间隔离层（18）。 高介电常数层（28）和外电极（30）从内电极（24）向外形成。
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8.发明授权
公开(公告)号：US5576928A
公开(公告)日：1996-11-19
申请号：US475121
申请日：1995-06-07
CPC分类号： H01L28/55 , H01L28/60 , Y10T29/435
摘要： A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g. palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译： 本发明的优选实施方案包括使高介电常数材料（例如钛酸钡锶38）与电极接触的薄的非反应性膜（例如铂36）。 薄的非反应性膜在高介电常数材料层和电极基底（例如钯34）之间提供稳定的导电界面。 与标准薄膜层相反，薄的非反应性膜通常小于50nm厚，优选小于35nm厚，更优选在5nm和25nm之间，最优选在10nm和20nm之间。 薄的非反应性膜可以受益于所使用的材料的优点，同时避免或最小化许多它们的缺点。 薄的非反应性膜通常比标准薄膜层便宜得多，因为可以使用更少的材料，而不会显着影响与HDC材料接触的电极的表面积。 这些结构也可以用于多层电容器和其他薄膜铁电体器件，例如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。
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公开(公告)号：US5471364A
公开(公告)日：1995-11-28
申请号：US041025
申请日：1993-03-31
IPC分类号： H01G4/33 , H01G4/30 , H01G7/06 , H01L21/02 , H01L21/822 , H01L27/04 , H01L27/115 , H01G4/10 , H01G4/008
CPC分类号： H01L27/11502 , H01G4/306 , H01G7/06 , H01L28/56
摘要： A preferred embodiment of this invention comprises a first thin dielectric buffer layer of a first leakage-current-density material (e.g. strontium titanate 32) with a first moderate-dielectric-constant, a high-dielectric-constant layer of a second leakage-current-density material (e.g. barium strontium titanate 34) overlaying the first thin dielectric buffer layer, and a second thin dielectric buffer layer of a third leakage-current-density material (e.g. strontium titanate 36) with a second moderate-dielectric-constant overlaying the high-dielectric-constant layer, wherein the first and third leakage-current-density materials have substantially lower leakage-current-densities than the second leakage-current-density material. The first and second thin moderate-dielectric-constant buffer layers (e.g. strontium titanate 32, 36) substantially limit the leakage-current-density of the structure, with only modest degradation of the dielectric constant of the structure. The possibly lower dielectric constant of the structure is generally compensated for by the reduced leakage current of the structure. The additional layers generally require only minor modifications of existing processes, since the same processes that are used for the high-dielectric-constant oxide can generally be used for the low leakage-current-density dielectric. These structures may also be used for multilayer capacitors and other thin-film ferroelectric devices such as pyroelectric materials, non-volatile memories, thin-film piezoelectric and thin-film electro-optic oxides.
摘要翻译： 本发明的优选实施例包括具有第一中等介电常数的第一泄漏电流密度材料（例如钛酸锶32）的第一薄介电缓冲层，第二漏电流的高介电常数层 覆盖第一薄介电缓冲层的密度材料（例如钛酸钡锶34）和第二中等介电常数材料（例如钛酸锶36）的第二薄介电缓冲层覆盖第二中等介电常数 高介电常数层，其中第一和第三漏电流密度材料具有比第二漏电流密度材料低的泄漏电流密度。 第一和第二薄中等介电常数缓冲层（例如，钛酸锶32,36）基本上限制了结构的漏电流密度，结构的介电常数只有适度降低。 结构的可能较低的介电常数通常由结构的减小的漏电流补偿。 附加层通常仅需要对现有工艺进行微小修改，因为用于高介电常数氧化物的相同工艺通常可用于低泄漏电流密度电介质。 这些结构也可以用于多层电容器和其他薄膜铁电体器件，例如热电材料，非易失性存储器，薄膜压电和薄膜电光氧化物。
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公开(公告)号：US06432473B1
公开(公告)日：2002-08-13
申请号：US08458999
申请日：1995-06-01
IPC分类号： B05D512
CPC分类号： H01L27/11502 , H01G4/1227 , H01L21/02197 , H01L21/31691
摘要： The invention described is a method of forming an improved dielectric material by adding lead to an original perovskite material having an original critical grain size to form a lead enhanced perovskite material, then forming a layer of the lead enhanced perovskite material having an average grain size less than the original critical grain size whereby the dielectric constant of the layer is substantially greater than the dielectric constant of the original perovskite material with an average grain size similar to the average grain size of the layer. The critical grain size, as used herein, means the largest grain size such that the dielectric constant starts to rapidly decrease with decreasing grain sizes. Preferably, the lead enhanced perovskite material is further doped with one or more acceptor dopants whereby the resistivity is substantially increased and/or the loss tangent is substantially decreased. Preferably, the original perovskite material has a chemical composition ABO3, where A is one or more monovalent, divalent or trivalent elements, and B is one or more pentavalent, tetravalent, trivalent or divalent elements.
摘要翻译： 本发明描述了一种通过将铅添加到具有原始临界晶粒尺寸的原始钙钛矿材料以形成铅增强的钙钛矿材料形成改进的介电材料的方法，然后形成平均晶粒尺寸较小的铅增强的钙钛矿材料层 比原始的临界晶粒大小，由此该层的介电常数基本上大于原始钙钛矿材料的介电常数，平均晶粒尺寸与层的平均晶粒尺寸相似。 如本文所用，临界晶粒尺寸是指最大的晶粒尺寸，使得随着晶粒尺寸的减小，介电常数开始迅速降低。 优选地，铅增强的钙钛矿材料进一步掺杂有一种或多种受体掺杂剂，由此电阻率显着增加和/或损耗角正切减小。 优选地，原始钙钛矿材料具有化学组成ABO 3，其中A是一个或多个一价，二价或三价元素，B是一种或多种五价，四价，三价或二价元素。
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