Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists
    12.
    发明授权
    Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists 有权
    低脱气和非交联系列聚合物,用于EUV负色光致抗蚀剂

    公开(公告)号:US07442487B2

    公开(公告)日:2008-10-28

    申请号:US10750042

    申请日:2003-12-30

    IPC分类号: G03F7/00 G03F7/004

    CPC分类号: G03F7/0382

    摘要: A series structure of a chemically amplified negative tone photoresist that is not based on cross-linking chemistry is herein described. The photoresist may comprise: a first aromatic structure copolymerized with a cycloolefin, wherein the cycloolefin is functionalized with a di-ol. The photoresist may also include a photo acid generator (PAG). When at least a portion of the negative tone photoresist is exposed to light (EUV or UV radiation), the PAG releases an acid, which reacts with the functionalized di-ol to rearrange into a ketone or aldehyde. Then new ketone or aldehyde is less soluble in developer solution, resulting in a negative tone photoresist.

    摘要翻译: 这里描述了不基于交联化学的化学放大负色调光致抗蚀剂的串联结构。 光致抗蚀剂可以包括:与环烯共聚的第一芳族结构,其中环烯被二醇官能化。 光致抗蚀剂还可以包括光酸产生剂(PAG)。 当至少一部分负色调光致抗蚀剂暴露于光(EUV或UV辐射)时,PAG释放酸,其与官能化的二醇反应以重排成酮或醛。 那么新的酮或醛在显影剂溶液中的溶解性较差,产生负色调光致抗蚀剂。

    Cure during rinse to prevent resist collapse
    13.
    发明申请
    Cure during rinse to prevent resist collapse 审中-公开
    在冲洗期间固化,以防止塌陷

    公开(公告)号:US20060292500A1

    公开(公告)日:2006-12-28

    申请号:US11165717

    申请日:2005-06-24

    IPC分类号: G03F7/26

    CPC分类号: G03F7/40

    摘要: Numerous embodiments of a method to increase the mechanical strength of a photoresist structure are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist material is exposed to a first radiation treatment to define a pattern to be formed on the photoresist layer. A developer solution is applied to the photoresist material to form the pattern and rinsed with a rinse solution to remove the developer solution. The photoresist material is exposed to a second radiation treatment to induce cross-linking.

    摘要翻译: 描述了增加光致抗蚀剂结构的机械强度的方法的许多实施例。 在本发明的一个实施例中,将光致抗蚀剂材料分配在衬底上以形成光致抗蚀剂层。 光致抗蚀剂材料暴露于第一次辐射处理以限定在光致抗蚀剂层上形成的图案。 将显影剂溶液应用于光致抗蚀剂材料以形成图案,并用冲洗溶液漂洗以除去显影剂溶液。 将光致抗蚀剂材料暴露于第二次辐射处理以诱导交联。

    Photoresists with reduced outgassing for extreme ultraviolet lithography
    14.
    发明申请
    Photoresists with reduced outgassing for extreme ultraviolet lithography 有权
    具有减少放气用于极紫外光刻的光致抗蚀剂

    公开(公告)号:US20050079438A1

    公开(公告)日:2005-04-14

    申请号:US10686031

    申请日:2003-10-14

    申请人: Heidi Cao Wang Yueh

    发明人: Heidi Cao Wang Yueh

    IPC分类号: G03C1/76 G03F7/039

    CPC分类号: G03F7/0392 G03F7/0397

    摘要: Chemically amplified photoresists with reduced outgassing or no outgassing may be used in a vacuum environment of a lithography tool, such as an extreme ultraviolet lithography tool. A chemically amplified photoresist has a photoacid generator molecule. When the photoacid generator is irradiated, an acid is generated. The acid reacts with a protecting group in the photoresist to form an open-ring structure with reduced outgassing or no outgassing.

    摘要翻译: 可以在光刻工具的真空环境(例如极紫外光刻工具)中使用化学放大的光致抗蚀剂,其具有减少的放气或不发生除气。 化学放大光致抗蚀剂具有光酸产生剂分子。 当光酸发生剂被照射时,产生酸。 酸与光致抗蚀剂中的保护基反应以形成具有减少的除气或不排气的开环结构。

    NON-OUTGASSING LOW ACTIVATION ENERGY RESIST
    16.
    发明申请
    NON-OUTGASSING LOW ACTIVATION ENERGY RESIST 失效
    非出口低活动能量抵抗力

    公开(公告)号:US20070059634A1

    公开(公告)日:2007-03-15

    申请号:US11228589

    申请日:2005-09-15

    IPC分类号: G03C1/00

    摘要: Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100° C., and the separated branched polymers are too large to outgass from the photoresist layer.

    摘要翻译: 描述了防止从低活化能光致抗蚀剂脱气的方法的许多实施方案。 在本发明的一个实施例中,将光致抗蚀剂材料分配在衬底上以形成光致抗蚀剂层。 光致抗蚀剂层包括与缩醛或缩酮键连接的支链聚合物。 将光致抗蚀剂层的暴露部分暴露于辐射处理以切割缩醛或缩酮键并分离支化聚合物。 光致抗蚀剂层在低于约100℃的温度下烘烤,并且分离的支化聚合物太大而不能从光致抗蚀剂层逸出。