公开(公告)号：US20060046183A1

公开(公告)日：2006-03-02

申请号：US10927984

申请日：2004-08-26

申请人： Wang Yueh ,  Shane Nolen ,  Balijeet Bains ,  Alison Noble ,  Rex Frost

发明人： Wang Yueh ,  Shane Nolen ,  Balijeet Bains ,  Alison Noble ,  Rex Frost

IPC分类号： G03C1/76

CPC分类号： G03F7/322 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0392

摘要： A composition including a photoresist formulation and a surfactant additive is described herein.

摘要翻译： 本文描述了包含光致抗蚀剂制剂和表面活性剂添加剂的组合物。

公开(公告)号：US20060003271A1

公开(公告)日：2006-01-05

申请号：US10883457

申请日：2004-06-30

申请人： Shan Clark ,  Kim-Khanh Ho ,  James Clarke ,  Ernisse Putna ,  Wang Yueh

发明人： Shan Clark ,  Kim-Khanh Ho ,  James Clarke ,  Ernisse Putna ,  Wang Yueh

IPC分类号： G03F7/30

CPC分类号： G03F7/327

摘要： A basic supercritical solution formulated to include at least one supercritical fluid and a base may be used to quench a photo-generated acid within a photoresist as well as develop the photoresist. The base may be the supercritical fluid in the basic supercritical solution. A super critical fluid is a state of matter above the critical temperature and pressure (Tc and Pc). A basic supercritical solution formulated to include at least one supercritical fluid has a low viscosity and surface tension and is capable of penetrating narrow features having high aspect ratios and the photoresist material due to the gas-like nature of the supercritical fluid.

摘要翻译： 配制成包含至少一种超临界流体和碱的基本超临界溶液可用于淬灭光致抗蚀剂内的光生酸，以及显影光致抗蚀剂。 碱可以是基本超临界溶液中的超临界流体。 超临界流体是高于临界温度和压力（T T c C和C C）的物质状态。 配制成包含至少一种超临界流体的基本超临界溶液具有低粘度和表面张力，并且由于超临界流体的气体性质，能够穿透具有高纵横比的窄特征和光致抗蚀剂材料。

公开(公告)号：US20050133920A1

公开(公告)日：2005-06-23

申请号：US10746485

申请日：2003-12-23

申请人： Huey-Chiang Liou ,  Wang Yueh

发明人： Huey-Chiang Liou ,  Wang Yueh

IPC分类号： H01L21/312 ,  H01L21/768 ,  H01L23/532 ,  H01L21/4763 ,  H01L21/302 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/02137 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76831 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1047 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming an opening in a disclosed ILD is described. The ILD in one embodiment includes a matrix material and a photosensitive porogen. Hard sidewalls are formed in the ILD allowing a thin barrier layer to be used in a dual damascene copper and porous low-k without pore sealing steps.

摘要翻译： 描述了在公开的ILD中形成开口的方法。 在一个实施方案中，ILD包括基质材料和感光致孔剂。 在ILD中形成硬的侧壁，允许在双镶嵌铜和多孔低k（无孔密封步骤）中使用薄的阻挡层。

公开(公告)号：US20050084807A1

公开(公告)日：2005-04-21

申请号：US10688521

申请日：2003-10-17

申请人： Robert Meagley ,  Michael Goodner ,  E. Putna ,  Shan Clark ,  Wang Yueh

发明人： Robert Meagley ,  Michael Goodner ,  E. Putna ,  Shan Clark ,  Wang Yueh

IPC分类号： G03F7/32 ,  G03F7/40 ,  G03C5/18

CPC分类号： G03F7/32 ,  G03F7/40

摘要： Line edge roughness may be reduced by treating a patterned photoresist with a plasticizer. The plasticizer may be utilized in a way to surface treat the photoresist after development. Thereafter, the plasticized photoresist may be subjected to a heating step to reflow the photoresist. The reflow process may reduce the line edge roughness of the patterned, developed photoresist.

摘要翻译： 可以通过用增塑剂处理图案化的光致抗蚀剂来减少线边缘粗糙度。 增塑剂可以以显影处理光刻胶的方式使用。 此后，可以对塑化的光致抗蚀剂进行加热步骤以回流光致抗蚀剂。 回流工艺可以降低图案化显影的光致抗蚀剂的线边缘粗糙度。

公开(公告)号：US06849381B2

公开(公告)日：2005-02-01

申请号：US10408522

申请日：2003-04-07

申请人： George G. Barclay ,  Stefan J. Caporale ,  Wang Yueh ,  Zhibiao Mao ,  Joseph Mattia

发明人： George G. Barclay ,  Stefan J. Caporale ,  Wang Yueh ,  Zhibiao Mao ,  Joseph Mattia

IPC分类号： C08F220/18 ,  C08F222/06 ,  C08F232/00 ,  C08L33/06 ,  C08L35/00 ,  C08L45/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0397 ,  G03F7/0395 ,  Y10S430/106 ,  Y10S430/111

摘要： The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 193 nm. Polymers of the invention suitably contain 1) photoacid labile groups that preferably contain an alicyclic moiety; 2) a polymerized electron-deficient monomer; 3) a polymerized cyclic olefin moiety. Particularly preferred polymers of the invention are tetrapolymers or pentapolymers, preferably with differing polymerized norbornene units.

摘要翻译： 本发明包括聚合物和光致抗蚀剂组合物，其包含作为树脂粘合剂组分的聚合物。 本发明的光刻胶包括可以在短波长例如亚200nm，特别是193nm下有效成像的化学放大的正性抗蚀剂。 本发明的聚合物适当地含有1）优选含有脂环族部分的光酸不稳定基团; 2）聚合电子缺陷单体; 3）聚合的环烯烃部分。 本发明特别优选的聚合物是四聚物或五元共聚物，优选具有不同聚合的降冰片烯单元。

公开(公告)号：US07867687B2

公开(公告)日：2011-01-11

申请号：US10687288

申请日：2003-10-15

申请人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

发明人： Wang Yueh ,  Huey-Chiang Liou ,  Hai Deng ,  Hok-Kin Choi

IPC分类号： G03F7/004

CPC分类号： G03F7/022 ,  G03F7/023 ,  G03F7/0233

摘要： Embodiments of the invention provide a non-chemically amplified photoresist, which results in reduced line wide roughness (LWR). In accordance with one embodiment the photoresist includes a developer-soluble resin (DSR) and a photoactive compound (PAC). For one embodiment of the invention, the even distribution of the PAC within the DSR results in reduced acid diffusion thus reducing LWR. Prior to exposure to the light source, the PAC inhibits solubility of the DSR in the developer. Upon exposure the PAC converts to acid to promote solubility of the DSR. The even distribution of the PAC within the photoresist results in reduced LWR and a reduction in defects. For one embodiment the photoresist is applied in the EUV technology (e.g., wavelength is 13.4 nm). For such an embodiment the LWR may be reduced to less than 1.5 nm allowing for effective fabrication of devices having feature sizes of approximately 15 nm.

摘要翻译： 本发明的实施例提供非化学放大的光致抗蚀剂，其导致线宽粗糙度（LWR）的降低。 根据一个实施方案，光致抗蚀剂包括显影剂可溶性树脂（DSR）和光敏化合物（PAC）。 对于本发明的一个实施例，PAC在DSR内的均匀分布导致酸扩散减少，从而减少LWR。 在暴露于光源之前，PAC抑制DSR在显影剂中的溶解度。 曝光后，PAC转化为酸，以促进DSR的溶解度。 PAC在光致抗蚀剂内的均匀分布导致LWR降低和缺陷减少。 对于一个实施例，以EUV技术（例如，波长为13.4nm）施加光致抗蚀剂。 对于这样的实施例，LWR可以减小到小于1.5nm，允许有效地制造具有大约15nm的特征尺寸的器件。

公开(公告)号：US07678527B2

公开(公告)日：2010-03-16

申请号：US10688109

申请日：2003-10-16

申请人： Robert P Meagley ,  Ernisse S Putna ,  Wang Yueh

发明人： Robert P Meagley ,  Ernisse S Putna ,  Wang Yueh

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20

CPC分类号： G03F7/2041 ,  G03F7/0392

摘要： Embodiments of the invention provide methods and compositions for providing photoresists with improved liquid-contact properties. For one embodiment of the invention, a photoresist is provided having one or more constituent components that are resistant to diffusion between the photoresist and an index-matching liquid (IML). For such an embodiment in which the IML is water, a photoresist component is provided that is hydrophobic thus reducing diffusion between the photoresist and the water. In various alternative embodiments of the invention, a photoresist is provided having one or more constituent components that encourage diffusion between the photoresist layer and the IML in such manner as to impart beneficial liquid-contact properties to the photoresist layer. For such an embodiment in which the IML is water, a photoresist is provided having one or more hydrophilic constituents.

摘要翻译： 本发明的实施方案提供了提供具有改进的液体接触性能的光致抗蚀剂的方法和组合物。 对于本发明的一个实施例，提供具有一个或多个阻挡光致抗蚀剂和折射率匹配液体（IML）之间的扩散的组成成分的光致抗蚀剂。 对于其中IML为水的这种实施方案，提供了疏水性的光致抗蚀剂组分，从而减少光致抗蚀剂和水之间的扩散。 在本发明的各种替代实施例中，提供具有一种或多种构成组分的光致抗蚀剂，其以促使光致抗蚀剂层有益的液体接触性质的方式促进光致抗蚀剂层和IML之间的扩散。 对于其中IML为水的这种实施方案，提供具有一种或多种亲水组分的光致抗蚀剂。

公开(公告)号：US07459260B2

公开(公告)日：2008-12-02

申请号：US11093889

申请日：2005-03-29

申请人： Manish Chandhok ,  Wang Yueh ,  Heidi Cao

发明人： Manish Chandhok ,  Wang Yueh ,  Heidi Cao

IPC分类号： G03F7/004 ,  G03F7/039

CPC分类号： G03F7/0392 ,  G03F7/2004

摘要： A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.

摘要翻译： 改进的EUV光致抗蚀剂和制造抗蚀剂的方法。 改性抗蚀剂包括EUV光致抗蚀剂和结合到EUV光致抗蚀剂中的LAM。

公开(公告)号：US07442487B2

公开(公告)日：2008-10-28

申请号：US10750042

申请日：2003-12-30

申请人： Wang Yueh ,  Heidi Cao ,  Manish Chandhok

发明人： Wang Yueh ,  Heidi Cao ,  Manish Chandhok

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： G03F7/0382

摘要： A series structure of a chemically amplified negative tone photoresist that is not based on cross-linking chemistry is herein described. The photoresist may comprise: a first aromatic structure copolymerized with a cycloolefin, wherein the cycloolefin is functionalized with a di-ol. The photoresist may also include a photo acid generator (PAG). When at least a portion of the negative tone photoresist is exposed to light (EUV or UV radiation), the PAG releases an acid, which reacts with the functionalized di-ol to rearrange into a ketone or aldehyde. Then new ketone or aldehyde is less soluble in developer solution, resulting in a negative tone photoresist.

摘要翻译： 这里描述了不基于交联化学的化学放大负色调光致抗蚀剂的串联结构。 光致抗蚀剂可以包括：与环烯共聚的第一芳族结构，其中环烯被二醇官能化。 光致抗蚀剂还可以包括光酸产生剂（PAG）。 当至少一部分负色调光致抗蚀剂暴露于光（EUV或UV辐射）时，PAG释放酸，其与官能化的二醇反应以重排成酮或醛。 那么新的酮或醛在显影剂溶液中的溶解性较差，产生负色调光致抗蚀剂。

公开(公告)号：US20060292500A1

公开(公告)日：2006-12-28

申请号：US11165717

申请日：2005-06-24

申请人： Jeanette Roberts ,  Heidi Cao ,  Wang Yueh

发明人： Jeanette Roberts ,  Heidi Cao ,  Wang Yueh

IPC分类号： G03F7/26

CPC分类号： G03F7/40

摘要： Numerous embodiments of a method to increase the mechanical strength of a photoresist structure are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist material is exposed to a first radiation treatment to define a pattern to be formed on the photoresist layer. A developer solution is applied to the photoresist material to form the pattern and rinsed with a rinse solution to remove the developer solution. The photoresist material is exposed to a second radiation treatment to induce cross-linking.

摘要翻译： 描述了增加光致抗蚀剂结构的机械强度的方法的许多实施例。 在本发明的一个实施例中，将光致抗蚀剂材料分配在衬底上以形成光致抗蚀剂层。 光致抗蚀剂材料暴露于第一次辐射处理以限定在光致抗蚀剂层上形成的图案。 将显影剂溶液应用于光致抗蚀剂材料以形成图案，并用冲洗溶液漂洗以除去显影剂溶液。 将光致抗蚀剂材料暴露于第二次辐射处理以诱导交联。