公开(公告)号：US20090294909A1

公开(公告)日：2009-12-03

申请号：US12453743

申请日：2009-05-20

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/403

摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

摘要翻译： 本发明的目的是通过磁通处理来实现具有高浓度电子的高质量n型半导体晶体的生产。 本发明的用于通过助熔剂制造n型III族氮化物基化合物半导体的方法，该方法包括通过使用助熔剂熔化至少III族元素来制备熔体; 向熔体供给含氮气体; 以及从所述熔体在籽晶上生长n型III族氮化物基化合物半导体晶体。 在该方法中，将碳和锗溶解在熔体中，并将​​锗作为供体掺入到半导体晶体中，从而制备n型半导体晶体。 熔体中锗与镓的摩尔比为0.05摩尔％〜0.5摩尔％，碳与钠的摩尔比为0.1摩尔％〜3.0摩尔％。

公开(公告)号：US08507364B2

公开(公告)日：2013-08-13

申请号：US12453743

申请日：2009-05-20

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Yasuhide Yakushi ,  Takayuki Sato ,  Makoto Iwai ,  Katsuhiro Imai ,  Yusuke Mori ,  Yasuo Kitaoka

IPC分类号： H01L21/20

CPC分类号： C30B9/12 ,  C30B9/10 ,  C30B29/403

摘要： An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.

公开(公告)号：US08123856B2

公开(公告)日：2012-02-28

申请号：US12225550

申请日：2007-04-05

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/00 ,  C30B19/06

CPC分类号： C30B29/403 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor. The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.

摘要翻译： 在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。 提供本发明的装置用于制造III族氮化物基化合物半导体。 该装置包括在熔融状态下维持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器的外部容器和加热装置，以及用于 将从外部容器外部至少含有氮气的气体进料到反应器中。 进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

公开(公告)号：US08227324B2

公开(公告)日：2012-07-24

申请号：US12448207

申请日：2007-12-10

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/20

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625

摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.

摘要翻译： 在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。 因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。 当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解 在助焊剂混合物中。

公开(公告)号：US20090173273A1

公开(公告)日：2009-07-09

申请号：US12225550

申请日：2007-04-05

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： C30B19/00 ,  C30B19/06

CPC分类号： C30B29/403 ,  C30B9/00 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1024

摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.

摘要翻译： 在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。 本发明的装置用于制造III族氮化物基化合物半导体该装置包括：在熔融状态下保持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置， 用于容纳反应器和加热装置的外部容器，以及用于将从外部容器的外部至少含有氮气的气体进料到反应器中的进料管。 进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

公开(公告)号：US20100093157A1

公开(公告)日：2010-04-15

申请号：US12448207

申请日：2007-12-10

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/20

CPC分类号： C30B19/02 ,  C30B9/10 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625

摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.

摘要翻译： 在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。 因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。 当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解 在助焊剂混合物中。

公开(公告)号：US20090169444A1

公开(公告)日：2009-07-02

申请号：US12225716

申请日：2007-04-05

申请人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Shiro Yamazaki ,  Makoto Iwai ,  Takanao Shimodaira ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： B01J19/00

CPC分类号： C30B9/00 ,  C30B29/403

摘要： An object of the invention is to prevent, in the flux method, diffusion of substances that constitute the atmosphere of the outer vessel into the reactor.The apparatus for producing a group III nitride based compound semiconductor, the apparatus including a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, and an outer vessel for accommodating the reactor and the heating apparatus, characterized in that diffusion of substances that constitute the atmosphere of the outer vessel into the reactor is prevented.

摘要翻译： 本发明的目的是在助焊剂方法中防止构成外容器气氛的物质扩散到反应器中。 用于制造III族氮化物基化合物半导体的装置，该装置包括在熔融状态下保持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置和用于 容纳反应器和加热装置，其特征在于防止构成外部容器的气体的物质扩散到反应器中。

公开(公告)号：US09263258B2

公开(公告)日：2016-02-16

申请号：US12320642

申请日：2009-01-30

申请人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Yasuhide Yakushi ,  Koji Okuno ,  Koichi Goshonoo

发明人： Seiji Nagai ,  Shiro Yamazaki ,  Takayuki Sato ,  Yasuhide Yakushi ,  Koji Okuno ,  Koichi Goshonoo

IPC分类号： C30B25/04 ,  B32B19/04 ,  H01L21/02 ,  C30B25/18 ,  C30B29/40

CPC分类号： H01L21/0254 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02609 ,  H01L21/02639

摘要： Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection Lsapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth. The GaN layer is grown so that the a-axis of the layer is perpendicular to the exposed R-plane surfaces of the sapphire substrate; the c-axis of the layer is parallel to the axis direction Lsapph-AM of the sapphire substrate; and the m-axis of the layer, which is inclined by 30° from the a-axis thereof, is perpendicular to the main surface (inclined by 30° from the exposed R-plane surfaces) of the sapphire substrate.

摘要翻译： 提供一种具有M面主面的III族氮化物系化合物半导体的制造方法。 该方法采用蓝色蓝宝石衬底，该蓝宝石衬底具有主表面，其相对于R平面围绕由R平面和与其垂直的A平面形成的交线Lsapph-AM倾斜30°。 暴露蓝宝石衬底的R平面表面，并且在衬底的主表面上形成二氧化硅掩模。 AlN缓冲层形成在暴露的R平面上。 在AlN缓冲层上形成GaN层。 在GaN生长的初始阶段，蓝宝石衬底的顶表面通过横向生长完全被GaN层覆盖。 生长GaN层使得该层的a轴垂直于蓝宝石衬底的暴露的R平面表面; 层的c轴平行于蓝宝石衬底的轴方向Lsapph-AM; 并且从其a轴倾斜30°的层的m轴垂直于蓝宝石衬底的主表面（从露出的R平面倾斜30°）。

公开(公告)号：US07052979B2

公开(公告)日：2006-05-30

申请号：US10467566

申请日：2002-02-12

申请人： Seiji Nagai ,  Kazuyoshi Tomita ,  Shiro Yamazaki ,  Yuta Tezen ,  Toshio Hiramatsu

发明人： Seiji Nagai ,  Kazuyoshi Tomita ,  Shiro Yamazaki ,  Yuta Tezen ,  Toshio Hiramatsu

IPC分类号： H01L21/20

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0066 ,  H01L33/007

摘要： When a substrate layer (desired semiconductor crystal) made of a group III nitride compound is grown on a base substrate comprising a lot of projection parts, a cavity in which a semiconductor crystal is not deposited may be formed between each projection part although it depends on conditions such as the size of each projection part, arranging interval between each projection part and crystal growth. So when the thickness of the substrate layer is sufficiently larger compared with the height of the projection part, inner stress or outer stress become easier to act intensively to the projection part. As a result, such stress especially functions as shearing stress toward the projection part. When the shearing stress becomes larger, the projection part is ruptured. So utilizing the shearing stress enables to separate the base substrate and the substrate layer easily. The larger the cavities are formed, the more stress tends to concentrate to the projection parts, to thereby enable to separate the base substrate and the substrate layer more securely.

摘要翻译： 当在包括大量投影部分的基底基板上生长由III族氮化物化合物制成的衬底层（期望的半导体晶体）时，可以在每个突出部分之间形成其中不沉积半导体晶体的空腔，尽管它取决于 条件如每个投影部分的尺寸，每个投影部分之间的间隔和晶体生长。 因此，当基板层的厚度与突出部分的高度相比足够大时，内应力或外应力变得更容易集中于投影部分。 结果，这种应力特别地作用于朝向投影部分的剪切应力。 当剪切应力变大时，突出部分破裂。 因此，利用剪切应力使得能够容易地分离基底和基底层。 形成空穴越大，应力越倾向于集中到突出部分，从而能够更牢固地分离基底基底和基底层。

公开(公告)号：US20090106959A1

公开(公告)日：2009-04-30

申请号：US12289257

申请日：2008-10-23

申请人： Shiro Yamazaki ,  Koji Hirata

发明人： Shiro Yamazaki ,  Koji Hirata

IPC分类号： H01L21/67

CPC分类号： C30B29/403 ,  C30B9/10 ,  Y10T29/41 ,  Y10T117/10

摘要： The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.

摘要翻译： 本发明提供一种不影响旋转轴旋转的III族氮化物半导体制造系统。 III族氮化物半导体制造系统具有开口的反应容器，设置在反应容器的内部并含有至少具有III族金属和碱金属的熔融物的坩埚，支撑坩埚的保持单元， 旋转轴通过开口从反应容器的内部延伸到反应容器的外部;旋转轴盖，其覆盖位于反应容器外部并连接到开口处的反应容器的旋转轴的一部分， 旋转驱动单元，设置在所述反应容器的外部并调节所述旋转轴;以及供给管，其连接到所述旋转轴盖，并且将至少包含氮的气体供应到所述旋转轴和所述旋转轴盖之间的间隙中，其中， 气体和熔体反应以生长III族氮化物半导体晶体。