公开(公告)号：US20120120126A1

公开(公告)日：2012-05-17

申请号：US13354672

申请日：2012-01-20

申请人： Shunpei YAMAZAKI ,  Hajime Kimura ,  Mai Akiba ,  Aya Anzai ,  Yu Yamazaki

发明人： Shunpei YAMAZAKI ,  Hajime Kimura ,  Mai Akiba ,  Aya Anzai ,  Yu Yamazaki

IPC分类号： G09G5/10 ,  G09G3/32 ,  G09G5/00

CPC分类号： G09G3/006 ,  G09G3/2022 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/061 ,  G09G2320/0233 ,  G09G2320/0285 ,  G09G2320/029 ,  G09G2320/0295 ,  G09G2320/043 ,  G09G2320/048 ,  G09G2320/0693

摘要： To provide a light emitting device without nonuniformity of luminance, a correcting circuit for correcting a video signal supplied to each pixel to a light emitting device. The correcting circuit is stored with data of a dispersion of a characteristic of a driving TFT among pixels and data of a change over time of luminance of a light emitting element. Further, by correcting a video signal inputted to the light emitting device in conformity with a characteristic of the driving TFT of each pixel and a degree of a deterioration of the light emitting element based on the over-described two data, nonuniformity of luminance caused by a deterioration of an electroluminescent layer and nonuniformity of luminance caused by dispersion of a characteristic of the driving TFT are restrained.

摘要翻译： 为了提供没有不均匀亮度的发光器件，用于将提供给每个像素的视频信号校正到发光器件的校正电路。 校正电路与像素中的驱动TFT的特性的色散的数据和发光元件的亮度随时间的变化的数据一起存储。 此外，通过根据上述两个数据，校正根据每个像素的驱动TFT的特性和发光元件的劣化程度输入到发光器件的视频信号，由 抑制了电致发光层的劣化以及由驱动TFT的特性的分散引起的亮度的不均匀性。

公开(公告)号：US20120171795A1

公开(公告)日：2012-07-05

申请号：US13421171

申请日：2012-03-15

申请人： Shunpei YAMAZAKI ,  Toru Mitsuki ,  Tamae Takano

发明人： Shunpei YAMAZAKI ,  Toru Mitsuki ,  Tamae Takano

IPC分类号： H01L21/20 ,  H01L33/16

CPC分类号： H01L21/02686 ,  B23K26/0732 ,  B23K26/0738 ,  H01L21/02532 ,  H01L21/02672

摘要： A method of performing irradiation of laser light is given as a method of crystallizing a semiconductor film. However, if laser light is irradiated to a semiconductor film, the semiconductor film is instantaneously melted and expands locally. The temperature gradient between a substrate and the semiconductor film is precipitous, distortions may develop in the semiconductor film. Thus, the film quality of the crystalline semiconductor film obtained will drop in some cases. With the present invention, distortions of the semiconductor film are reduced by heating the semiconductor film using a heat treatment process after performing crystallization of the semiconductor film using laser light. Compared to the localized heating due to the irradiation of laser light, the heat treatment process is performed over the entire substrate and semiconductor film. Therefore, it is possible to reduce distortions formed in the semiconductor film and to increase the physical properties of the semiconductor film.

摘要翻译： 作为使半导体膜结晶化的方法，提供了进行激光照射的方法。 然而，如果激光照射到半导体膜上，则半导体膜瞬间熔化并局部膨胀。 衬底和半导体膜之间的温度梯度是陡峭的，半导体膜中可能会发生变形。 因此，获得的结晶半导体膜的膜质量在某些情况下将下降。 通过本发明，通过使用激光进行半导体膜的结晶后，使用热处理工艺来加热半导体膜来减小半导体膜的失真。 与通过照射激光的局部加热相比，在整个基板和半导体膜上进行热处理工艺。 因此，可以减少形成在半导体膜中的失真并增加半导体膜的物理性能。

公开(公告)号：US20100038716A1

公开(公告)日：2010-02-18

申请号：US12574162

申请日：2009-10-06

申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

IPC分类号： H01L29/786

CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

公开(公告)号：US20110073934A1

公开(公告)日：2011-03-31

申请号：US12963847

申请日：2010-12-09

申请人： Tamae TAKANO ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

发明人： Tamae TAKANO ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/792

CPC分类号： H01L27/1157 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/13 ,  H01L29/4234 ,  H01L29/792 ,  H01L29/7923

摘要： The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.

公开(公告)号：US20120037978A1

公开(公告)日：2012-02-16

申请号：US13280643

申请日：2011-10-25

申请人： Tamae TAKANO ,  Shunpei YAMAZAKI

发明人： Tamae TAKANO ,  Shunpei YAMAZAKI

IPC分类号： H01L29/792

CPC分类号： H01L27/12 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with a first insulating layer interposed therebetween, and a gate electrode is provided over the charge accumulating layer with a second insulating layer interposed therebetween. The semiconductor layer includes a channel formation region provided in a region overlapping with the gate electrode, a first impurity region for forming a source region or drain region, which is provided to be adjacent to the channel formation region, and a second impurity region provided to be adjacent to the channel formation region and the first impurity region. A conductivity type of the first impurity region is different from that of the second impurity region.

摘要翻译： 以半导体层形成在基板上的方式设置非易失性半导体存储元件，在半导体层上形成电荷累积层，其间插入有第一绝缘层，在电荷累积层之上设置栅电极 其间插入有第二绝缘层。 半导体层包括设置在与栅电极重叠的区域中的沟道形成区域，用于形成与沟道形成区域相邻的源极区域或漏极区域的第一杂质区域和设置成与沟道形成区域相邻的第二杂质区域 与沟道形成区域和第一杂质区域相邻。 第一杂质区的导电类型与第二杂质区不同。

公开(公告)号：US20110095354A1

公开(公告)日：2011-04-28

申请号：US12977911

申请日：2010-12-23

申请人： Tamae TAKANO ,  Shunpei YAMAZAKI

发明人： Tamae TAKANO ,  Shunpei YAMAZAKI

IPC分类号： H01L29/792

CPC分类号： H01L27/12 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with a first insulating layer interposed therebetween, and a gate electrode is provided over the charge accumulating layer with a second insulating layer interposed therebetween. The semiconductor layer includes a channel formation region provided in a region overlapping with the gate electrode, a first impurity region for forming a source region or drain region, which is provided to be adjacent to the channel formation region, and a second impurity region provided to be adjacent to the channel formation region and the first impurity region. A conductivity type of the first impurity region is different from that of the second impurity region.

摘要翻译： 以半导体层形成在基板上的方式设置非易失性半导体存储元件，在半导体层上形成电荷累积层，其间插入有第一绝缘层，在电荷累积层之上设置栅电极 其间插入有第二绝缘层。 半导体层包括设置在与栅电极重叠的区域中的沟道形成区域，用于形成与沟道形成区域相邻的源极区域或漏极区域的第一杂质区域和设置成与沟道形成区域相邻的第二杂质区域 与沟道形成区域和第一杂质区域相邻。 第一杂质区的导电类型与第二杂质区不同。

公开(公告)号：US20120108049A1

公开(公告)日：2012-05-03

申请号：US13338366

申请日：2011-12-28

申请人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

发明人： Shunpei YAMAZAKI ,  Hisashi OHTANI ,  Tamae TAKANO

IPC分类号： H01L21/28

CPC分类号： H01L29/04 ,  H01L21/0237 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78675

摘要： There is provided a technique to form a single crystal semiconductor thin film or a substantially single crystal semiconductor thin film. A catalytic element for facilitating crystallization of an amorphous semiconductor thin film is added to the amorphous semiconductor thin film, and a heat treatment is carried out to obtain a crystalline semiconductor thin film. After the crystalline semiconductor thin film is irradiated with ultraviolet light or infrared light, a heat treatment at a temperature of 900 to 1200° C. is carried out in a reducing atmosphere. The surface of the crystalline semiconductor thin film is extremely flattened through this step, defects in crystal grains and crystal grain boundaries disappear, and the single crystal semiconductor thin film or substantially single crystal semiconductor thin film is obtained.

摘要翻译： 提供了形成单晶半导体薄膜或基本单晶半导体薄膜的技术。 将非晶半导体薄膜的促进结晶化的催化剂元素添加到非晶半导体薄膜中，进行热处理，得到结晶半导体薄膜。 在用紫外线或红外线照射结晶半导体薄膜之后，在还原气氛中进行900〜1200℃的热处理。 结晶半导体薄膜的表面通过该工序极其平坦化，晶粒和晶界的缺陷消失，得到单晶半导体薄膜或大致单晶半导体薄膜。

公开(公告)号：US20090258479A1

公开(公告)日：2009-10-15

申请号：US12488095

申请日：2009-06-19

申请人： Tamae TAKANO ,  Shunpei YAMAZAKI

发明人： Tamae TAKANO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/28 ,  H01L21/22

CPC分类号： H01L27/12 ,  H01L21/84 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A nonvolatile semiconductor memory device is provided in such a manner that a semiconductor layer is formed over a substrate, a charge accumulating layer is formed over the semiconductor layer with a first insulating layer interposed therebetween, and a gate electrode is provided over the charge accumulating layer with a second insulating layer interposed therebetween. The semiconductor layer includes a channel formation region provided in a region overlapping with the gate electrode, a first impurity region for forming a source region or drain region, which is provided to be adjacent to the channel formation region, and a second impurity region provided to be adjacent to the channel formation region and the first impurity region. A conductivity type of the first impurity region is different from that of the second impurity region.

摘要翻译： 以半导体层形成在基板上的方式设置非易失性半导体存储元件，在半导体层上形成电荷累积层，其间插入有第一绝缘层，在电荷累积层之上设置栅电极 其间插入有第二绝缘层。 半导体层包括设置在与栅电极重叠的区域中的沟道形成区域，用于形成与沟道形成区域相邻的源极区域或漏极区域的第一杂质区域和设置成与沟道形成区域相邻的第二杂质区域 与沟道形成区域和第一杂质区域相邻。 第一杂质区的导电类型与第二杂质区不同。

公开(公告)号：US20090098720A1

公开(公告)日：2009-04-16

申请号：US12334589

申请日：2008-12-15

申请人： Atsuo ISOBE ,  Satoshi MURAKAMI ,  Tamae TAKANO ,  Shunpei YAMAZAKI

发明人： Atsuo ISOBE ,  Satoshi MURAKAMI ,  Tamae TAKANO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/28 ,  H01L21/31

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L27/1248 ,  H01L29/42384

摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition of an electron density of 1×1011 cm−3 or more and 1×1013 cm−3 or less and an electron temperature of 0.5 eV or more and 1.5 eV or less, using a high frequency wave, forming a second insulating film to cover the semiconductor film, forming a gate electrode over the second insulating film, forming a third insulating film to cover the gate electrode, and forming a conductive film over the third insulating film.

摘要翻译： 本发明的半导体器件的制造方法包括以下步骤：在衬底上形成第一绝缘膜，在第一绝缘膜上形成半导体膜，通过对半导体膜进行等离子体处理来对半导体膜进行氧化或氮化 使用高频波，电子密度为1×10 11 cm -3以上且1×10 13 cm -3以下，电子温度为0.5eV以上且1.5eV以下的条件，形成覆盖半导体的第2绝缘膜 在所述第二绝缘膜上形成栅电极，形成第三绝缘膜以覆盖所述栅电极，以及在所述第三绝缘膜上形成导电膜。

公开(公告)号：US20120261667A1

公开(公告)日：2012-10-18

申请号：US13531610

申请日：2012-06-25

申请人： Shunpei YAMAZAKI ,  Satoshi Murakami ,  Mitsuaki Osame

发明人： Shunpei YAMAZAKI ,  Satoshi Murakami ,  Mitsuaki Osame

IPC分类号： H01L27/15 ,  H01L29/786

CPC分类号： H01L27/1248 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L27/3262 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/78645 ,  H01L51/5237 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5271 ,  H01L2251/5315

摘要： A display device according to the present invention includes a barrier layer formed over the transistor and a planarization layer formed over the barrier layer. The planarization layer has an opening and an edge portion of the planarization layer formed at the opening of the planarization layer is rounded. Further, a resin film is formed over the planarization layer and in the opening of the planarization layer, and the resin film also has an opening and an edge portion of the resin film formed at the opening of the resin film is rounded. A light emitting member is formed over the resin film.

摘要翻译： 根据本发明的显示装置包括形成在晶体管上的阻挡层和形成在阻挡层上的平坦化层。 平坦化层具有开口，并且在平坦化层的开口处形成的平坦化层的边缘部分是圆形的。 此外，在平坦化层和平坦化层的开口中形成树脂膜，树脂膜也具有开口，并且在树脂膜的开口处形成的树脂膜的边缘部分是圆形的。 在树脂膜上形成发光部件。