公开(公告)号：US20110073934A1

公开(公告)日：2011-03-31

申请号：US12963847

申请日：2010-12-09

申请人： Tamae TAKANO ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

发明人： Tamae TAKANO ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/792

CPC分类号： H01L27/1157 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/13 ,  H01L29/4234 ,  H01L29/792 ,  H01L29/7923

摘要： The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.

公开(公告)号：US20110027968A1

公开(公告)日：2011-02-03

申请号：US12899993

申请日：2010-10-07

申请人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Tetsuya KAKEHATA

发明人： Shunpei YAMAZAKI ,  Hideto OHNUMA ,  Tetsuya KAKEHATA

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/31662 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1229 ,  H01L29/66772 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/29099 ,  H01L2224/80001

摘要： A semiconductor device including a plurality of field-effect transistors which are stacked with a planarization layer interposed therebetween over a substrate having an insulating surface, in which semiconductor layers in the plurality of field-effect transistors are separated from semiconductor substrates, and the semiconductor layers are bonded to an insulating layer formed over the substrate having an insulating surface or an insulating layer formed over the planarization layer.

摘要翻译： 一种半导体器件，包括多个场效应晶体管，所述多个场效应晶体管在其间具有绝缘表面的衬底上层叠有平坦化层，所述多个场效应晶体管中的半导体层与半导体衬底分离，并且所述半导体层 被结合到形成在具有形成在平坦化层上的绝缘表面或绝缘层的衬底上的绝缘层。

公开(公告)号：US20090098739A1

公开(公告)日：2009-04-16

申请号：US12244414

申请日：2008-10-02

申请人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Takashi SHINGU ,  Tetsuya KAKEHATA ,  Kazutaka KURIKI ,  Shunpei YAMAZAKI

IPC分类号： H01L21/31

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： An object of the present invention is to provide a method for manufacturing an SOI substrate provided with a semiconductor layer which can be used practically even where a substrate having a low upper temperature limit such as a glass substrate is used. The manufacturing method compromises the steps of preparing a semiconductor substrate provided with a bonding layer formed on a surface thereof and a separation layer formed at a predetermined depth from the surface thereof, bonding the bonding layer to the base substrate having a distortion point of 700° C. or lower so that the semiconductor substrate and the base substrate face each other, and separating a part of the semiconductor substrate at the separation layer by heat treatment in order to form a single-crystal semiconductor layer over the base substrate. In the manufacturing method, a substrate which shrinks isotropically at least by the heat treatment is used as the base substrate.

摘要翻译： 本发明的目的是提供一种制造具有半导体层的SOI衬底的方法，即使在使用诸如玻璃衬底的上限温度低的衬底的情况下也可以使用。 制造方法损害了制备其表面上形成有接合层的半导体衬底和从其表面形成在预定深度的分离层的步骤，将接合层粘合到具有700°的变形点的基底 C.或更低，使得半导体衬底和基底基板彼此面对，并且通过热处理在分离层处分离半导体衬底的一部分，以在基底衬底上形成单晶半导体层。 在制造方法中，使用至少通过热处理各向同性收缩的基板作为基底。

公开(公告)号：US20090096054A1

公开(公告)日：2009-04-16

申请号：US12237606

申请日：2008-09-25

申请人： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Tetsuya KAKEHATA

发明人： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Tetsuya KAKEHATA

IPC分类号： H01L29/00 ,  H01L21/762

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/78621

摘要： A semiconductor device including a semiconductor substrate is provided. The semiconductor substrate includes a substrate having an insulating surface, and a plurality of stacks over the substrate having an insulating surface. Each of the plurality of stacks includes a bonding layer over the substrate having an insulating surface, an insulating layer over the bonding layer, and a single crystal semiconductor layer over the insulating layer. The substrate having an insulating surface has a depression, and the depression is provided between one of the plurality of stacks and another adjacent one of the plurality of stacks.

摘要翻译： 提供了包括半导体衬底的半导体器件。 半导体衬底包括具有绝缘表面的衬底和在衬底上的多个堆叠，其具有绝缘表面。 多个堆叠中的每一个在基板上包括具有绝缘表面的接合层，接合层上的绝缘层以及绝缘层上的单晶半导体层。 具有绝缘表面的基板具有凹陷，并且凹陷设置在多个叠层中的一个和多个叠层中的另一个相邻的堆叠之间。

公开(公告)号：US20090072343A1

公开(公告)日：2009-03-19

申请号：US12207634

申请日：2008-09-10

申请人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Yoichi IIKUBO ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO ,  Akihisa SHIMOMURA ,  Eiji HIGA ,  Tatsuya MIZOI ,  Yoji NAGANO ,  Fumito ISAKA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

IPC分类号： H01L29/00

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/76254 ,  H01L21/84 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78654

摘要： A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm.

摘要翻译： 使用其中使用低耐热性衬底作为基底的SOI衬底的高性能半导体器件。 而且，不用化学抛光而形成的高性能半导体器件。 此外，使用该半导体器件的电子设备。 包括绝缘基板上的绝缘层，绝缘层上的接合层和接合层上的单晶半导体层，单晶半导体层上表面的运算平均粗糙度为 大于或等于1nm且小于或等于7nm。 或者，粗糙度的均方根粗糙度可以大于或等于1nm且小于或等于10nm。 或者，粗糙度的最大高度差可以大于或等于5nm且小于或等于250nm。

公开(公告)号：US20100075470A1

公开(公告)日：2010-03-25

申请号：US12550540

申请日：2009-08-31

申请人： Suguru OZAWA ,  Atsuo ISOBE ,  Takashi HAMADA ,  Junpei MOMO ,  Hiroaki HONDA ,  Takashi SHINGU ,  Tetsuya KAKEHATA

发明人： Suguru OZAWA ,  Atsuo ISOBE ,  Takashi HAMADA ,  Junpei MOMO ,  Hiroaki HONDA ,  Takashi SHINGU ,  Tetsuya KAKEHATA

IPC分类号： H01L21/336 ,  H01L21/762

CPC分类号： H01L21/76254

摘要： After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.

摘要翻译： 在通过附着设置在基底基板上的单晶半导体层通过激光照射之后，通过第一热处理来提高其特性，并且在向单晶半导体层添加赋予导电性的杂质元素之后，进行第二热处理 比第一次热处理温度低。

公开(公告)号：US20100006940A1

公开(公告)日：2010-01-14

申请号：US12497720

申请日：2009-07-06

申请人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

发明人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L21/762

CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

公开(公告)号：US20090102008A1

公开(公告)日：2009-04-23

申请号：US12249437

申请日：2008-10-10

申请人： Tetsuya KAKEHATA

发明人： Tetsuya KAKEHATA

IPC分类号： H01L29/00 ,  H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/2007 ,  H01L21/321 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/66772

摘要： A semiconductor substrate having an SOI layer is provided. Between an SOI layer and a glass substrate, a bonding layer is provided which is formed of one layer or a plurality of layers of phosphosilicate glass, borosilicate glass, and/or borophosphosilicate glass, using organosilane as one material by a thermal CVD method at a temperature of 500° C. to 800° C.

摘要翻译： 提供具有SOI层的半导体衬底。 在SOI层和玻璃基板之间，提供由一层或多层磷硅酸盐玻璃，硼硅酸盐玻璃和/或硼磷硅酸盐玻璃形成的接合层，使用有机硅烷作为一种材料，通过热CVD法在 温度为500°C至800°C

公开(公告)号：US20120282757A1

公开(公告)日：2012-11-08

申请号：US13467082

申请日：2012-05-09

申请人： Tetsuya KAKEHATA ,  Kazutaka KURIKI

发明人： Tetsuya KAKEHATA ,  Kazutaka KURIKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.

摘要翻译： 制备半导体衬底和基底衬底; 在半导体衬底上形成氧化膜; 半导体衬底通过氧化膜被加速离子照射，以在半导体衬底的表面的预定深度处形成分离层; 在离子照射之后在氧化膜上方形成含氮层; 半导体衬底和基底衬底彼此相对设置，以将氮含量层的表面和基底衬底的表面彼此粘合; 并且半导体衬底被加热以沿着分离层分离，从而在氧化膜和含氮层之间形成在基底衬底上的单晶半导体层。

公开(公告)号：US20110316082A1

公开(公告)日：2011-12-29

申请号：US13230086

申请日：2011-09-12

申请人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

发明人： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

IPC分类号： H01L29/786 ,  H01L29/02

CPC分类号： H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

摘要翻译： 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。