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    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20090098720A1

    公开(公告)日：2009-04-16

    申请号：US12334589

    申请日：2008-12-15

    申请人： Atsuo ISOBE ,  Satoshi MURAKAMI ,  Tamae TAKANO ,  Shunpei YAMAZAKI

    发明人： Atsuo ISOBE ,  Satoshi MURAKAMI ,  Tamae TAKANO ,  Shunpei YAMAZAKI

    IPC分类号： H01L21/28 ,  H01L21/31

    CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L27/1248 ,  H01L29/42384

    摘要： A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition of an electron density of 1×1011 cm−3 or more and 1×1013 cm−3 or less and an electron temperature of 0.5 eV or more and 1.5 eV or less, using a high frequency wave, forming a second insulating film to cover the semiconductor film, forming a gate electrode over the second insulating film, forming a third insulating film to cover the gate electrode, and forming a conductive film over the third insulating film.

    摘要翻译： 本发明的半导体器件的制造方法包括以下步骤：在衬底上形成第一绝缘膜，在第一绝缘膜上形成半导体膜，通过对半导体膜进行等离子体处理来对半导体膜进行氧化或氮化 使用高频波，电子密度为1×10 11 cm -3以上且1×10 13 cm -3以下，电子温度为0.5eV以上且1.5eV以下的条件，形成覆盖半导体的第2绝缘膜 在所述第二绝缘膜上形成栅电极，形成第三绝缘膜以覆盖所述栅电极，以及在所述第三绝缘膜上形成导电膜。

    SEMICONDUCTOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体显示装置及其制造方法

    公开(公告)号：US20110241008A1

    公开(公告)日：2011-10-06

    申请号：US13162791

    申请日：2011-06-17

    申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masahiko HAYAKAWA ,  Kiyoshi KATO ,  Mitsuaki OSAME ,  Takashi HIROSUE ,  Saishi FUJIKAWA

    发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masahiko HAYAKAWA ,  Kiyoshi KATO ,  Mitsuaki OSAME ,  Takashi HIROSUE ,  Saishi FUJIKAWA

    IPC分类号： H01L33/08

    CPC分类号： H01L27/1244 ,  G02F1/136204 ,  H01L21/76804 ,  H01L21/76831 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78645 ,  H01L51/0037 ,  Y10S257/906 ,  Y10S257/908

    摘要： A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is foamed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.

    摘要翻译： 具有层间绝缘膜的半导体显示装置，其中以有限的成膜时间确保表面水平度，用于除去水分的热处理不需要很长时间，并且防止层间绝缘膜中的水分逸出到邻近的膜或电极 层间绝缘膜。 形成TFT，然后形成与有机树脂膜相比传递较少水分的含氮无机绝缘膜，以覆盖TFT。 接下来，施加包含感光性丙烯酸树脂的有机树脂，并通过将有机树脂膜部分地曝光而形成开口。 然后将开口发泡的有机树脂膜用含有无机绝缘膜覆盖，所述无机绝缘膜比有机树脂膜透湿少。 此后，在有机树脂膜的开口部分将栅极绝缘膜和含氮无机绝缘膜的两层部分地蚀刻掉，以暴露TFT的有源层。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREFOR 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20120001244A1

    公开(公告)日：2012-01-05

    申请号：US13230997

    申请日：2011-09-13

    申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO

    发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Jun KOYAMA ,  Yukio TANAKA ,  Hidehito KITAKADO

    IPC分类号： H01L27/06

    CPC分类号： H01L27/1255 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L29/78651 ,  H01L29/78675

    摘要： In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

    摘要翻译： 在有源矩阵型液晶显示装置中，其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上，提供了最佳的TFT结构，同时增加了像素矩阵电路的孔径比。 存在这样的结构，其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT，以及n沟道TFT，其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜，形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜，并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

    SEMICONDUCTOR DISPLAY DEVICE
    7.
    发明申请
    SEMICONDUCTOR DISPLAY DEVICE 有权
    半导体显示设备

    公开(公告)号：US20110309364A1

    公开(公告)日：2011-12-22

    申请号：US13217322

    申请日：2011-08-25

    申请人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masahiko HAYAKAWA ,  Kiyoshi KATO ,  Mitsuaki OSAME

    发明人： Shunpei YAMAZAKI ,  Satoshi MURAKAMI ,  Masahiko HAYAKAWA ,  Kiyoshi KATO ,  Mitsuaki OSAME

    IPC分类号： H01L29/786

    CPC分类号： H01L27/1248 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3246 ,  H01L27/3276 ,  H01L33/52 ,  H01L51/5237 ,  H01L51/5253

    摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulating film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

    摘要翻译： 本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制用于除去水分的加热处理的处理时间，并且可以防止水分 在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。 形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。 接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。 此后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。 然后，在有机树脂膜的开口部分中，通过蚀刻部分地打开栅极绝缘膜和含氮的两层无机绝缘膜，以暴露TFT的有源层。