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    Method of mechanical separation for a double layer transfer
    11.
    发明授权
    Method of mechanical separation for a double layer transfer 有权

    公开(公告)号：US12165900B2

    公开(公告)日：2024-12-10

    申请号：US18359807

    申请日：2023-07-26

    Applicant: Soitec

    Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

    IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

    Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

    COMPOSITE STRUCTURE COMPRISING A USEFUL MONOCRYSTALLINE SIC LAYER ON A POLYCRYSTALLINE SIC CARRIER SUBSTRATE AND METHOD FOR MANUFACTURING SAID STRUCTURE
    12.
    发明申请
    COMPOSITE STRUCTURE COMPRISING A USEFUL MONOCRYSTALLINE SIC LAYER ON A POLYCRYSTALLINE SIC CARRIER SUBSTRATE AND METHOD FOR MANUFACTURING SAID STRUCTURE 有权

    公开(公告)号：US20240395603A1

    公开(公告)日：2024-11-28

    申请号：US18694369

    申请日：2022-09-20

    Applicant: Soitec

    Inventor： Gweltaz Gaudin ,  Christophe Maleville ,  Sidoine Odoul ,  Ionut Radu ,  Hugo Biard

    IPC: H01L21/763 ,  H01L21/762 ,  H01L29/16

    Abstract: A method for manufacturing a composite structure having a layer of monocrystalline silicon carbide on a polycrystalline silicon carbide carrier substrate includes: providing an initial substrate of polycrystalline silicon carbide, having a front face and comprising grains, the average size of which is greater than 0.5 μm; forming a polycrystalline silicon carbide surface layer on the initial substrate to form the carrier substrate, the surface layer including grains having an average size of less than 500 nm and having a thickness of between 50 nm and 50 μm; preparing a free surface of the surface layer of the carrier substrate to obtain a roughness of less than 1 nm RMS; (d) a step of transferring the useful layer onto the carrier substrate, by applying molecular bonding, the surface layer located between the useful layer and the initial substrate. A carrier substrate and a composite structure are formed by the method.

    METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYSTALLINE SIC CARRIER USING A POLY CRYSTALLINE SIC INTERMEDIATE LAYER
    13.
    发明申请
    METHOD FOR TRANSFERRING A MONOCRYSTALLINE SIC LAYER ONTO A POLYCRYSTALLINE SIC CARRIER USING A POLY CRYSTALLINE SIC INTERMEDIATE LAYER 有权

    公开(公告)号：US20240392476A1

    公开(公告)日：2024-11-28

    申请号：US18694796

    申请日：2022-10-03

    Applicant: Soitec

    Inventor： Ionut Radu ,  Hugo Biard ,  Gweltaz Gaudin

    IPC: C30B33/06 ,  C30B28/14 ,  C30B29/36 ,  C30B33/02

    Abstract: A method of fabricating a composite structure including a thin layer of single-crystal silicon carbide on a polycrystalline SiC carrier substrate includes: forming a polycrystalline SiC layer on a donor substrate, at least a surface portion of which is made of single-crystal SiC; before or after forming the polycrystalline SiC layer, implanting ionic species into the surface portion of the donor substrate, so as to form a plane of weakness delimiting a thin single-crystal SiC layer to be transferred; after the implanting of the ionic species and the forming of the polycrystalline SiC layer, bonding the donor substrate and the polycrystalline SiC carrier substrate, the polycrystalline SiC layer being at the bonding interface; and detaching the donor substrate along the plane of weakness, so as to transfer the polycrystalline SiC layer and the thin single-crystal SiC layer onto the polycrystalline SiC carrier substrate.

    NCFET TRANSISTOR COMPRISING A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE
    14.
    发明公开
    NCFET TRANSISTOR COMPRISING A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE 审中-公开

    公开(公告)号：US20240170577A1

    公开(公告)日：2024-05-23

    申请号：US18551104

    申请日：2022-03-17

    Applicant: Soitec

    Inventor： Ionut Radu ,  Guillaume Besnard ,  Sorin Cristoloveanu

    IPC: H01L29/786 ,  H01L21/762

    CPC classification number: H01L29/78603 ,  H01L21/76254

    Abstract: An NCFET transistor comprises a semiconductor-on-insulator substrate for a field-effect transistor, and the NCFET transistor successively comprises, from its base to its surface: a semiconductor carrier substrate; a single ferroelectric layer, arranged in direct contact with the carrier substrate, which layer is designed to be biased so as to form a negative capacitance; and an active layer of a semiconductor material, which layer is designed to form the channel of the transistor, and is arranged in direct contact with the ferroelectric layer. The NCFET transistor further comprises a channel that is arranged in the active layer, a source and a drain that are arranged in the active layer on either side of the channel, and a gate that is arranged on the channel and is insulated from the channel by a gate dielectric.

    METHOD OF MECHANICAL SEPARATION FOR A DOUBLE LAYER TRANSFER
    15.
    发明公开
    METHOD OF MECHANICAL SEPARATION FOR A DOUBLE LAYER TRANSFER 审中-公开

    公开(公告)号：US20240021461A1

    公开(公告)日：2024-01-18

    申请号：US18359807

    申请日：2023-07-26

    Applicant: Soitec

    Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

    IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

    CPC classification number: H01L21/6835 ,  H01L21/4803 ,  H01L21/76251 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2221/6835

    Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

    Method for locating devices
    18.
    发明授权
    Method for locating devices 有权

    公开(公告)号：US11088016B2

    公开(公告)日：2021-08-10

    申请号：US16685938

    申请日：2019-11-15

    Applicant: Soitec

    Inventor： Marcel Broekaart ,  Ionut Radu ,  Chrystelle Lagahe Blanchard

    IPC: H01L21/762 ,  H01L27/146 ,  H01L23/544

    Abstract: The disclosure relates to a process for locating devices, the process comprising the following steps: a) providing a carrier substrate comprising: a device layer; and alignment marks; b) providing a donor substrate; c) forming a weak zone in the donor substrate, the weak zone delimiting a useful layer; d) assembling the donor substrate and the carrier substrate; and e) fracturing the donor substrate in the weak zone so as to transfer the useful layer to the device layer; wherein the alignment marks are placed in cavities formed in the device layer, the cavities having an aperture flush with the free surface of the device layer.

    Method of mechanical separation for a double layer transfer
    20.
    发明授权
    Method of mechanical separation for a double layer transfer 有权

    公开(公告)号：US10910250B2

    公开(公告)日：2021-02-02

    申请号：US15170532

    申请日：2016-06-01

    Applicant: Soitec

    Inventor： Marcel Broekaart ,  Ionut Radu ,  Didier Landru

    IPC: H01L21/683 ,  H01L21/48 ,  H01L21/762

    Abstract: The present disclosure relates to a method for mechanically separating layers, in particular in a double layer transfer process. The present disclosure relates more in particular to a method for mechanically separating layers, comprising the steps of providing a semiconductor compound comprising a layer of a handle substrate and an active layer with a front main side and a back main side opposite the front main side, wherein the layer of the handle substrate is attached to the front main side of the active layer, then providing a layer of a carrier substrate onto the back main side of the active layer, and then initiating mechanical separation of the layer of the handle substrate, wherein the layer of the handle substrate and the layer of the carrier substrate are provided with a substantially symmetrical mechanical structure.

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