公开(公告)号：US20150130001A1

公开(公告)日：2015-05-14

申请号：US14080555

申请日：2013-11-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Yin-Chieh HUANG ,  Wan-Chen Huang ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: An image sensor is provided including a substrate, an array of photosensitive units, a grid and a plurality of color filters. In the image sensor, the grid has a first portion and a second portion disposed on the first portion. The second portion of the grid can cause reflection or refraction of incident lights targeted for one image sensor element back into the same image sensor element, so as to avoid crosstalk occurred. Further, a method for manufacturing the image sensor also provides herein.

Abstract translation: 提供一种图像传感器，包括基板，感光单元阵列，格栅和多个滤色器。 在图像传感器中，格栅具有设置在第一部分上的第一部分和第二部分。 网格的第二部分可以使针对一个图像传感器元件的入射光的反射或折射返回到相同的图像传感器元件中，以避免串扰发生。 此外，本文还提供了一种用于制造图像传感器的方法。

公开(公告)号：US20240088195A1

公开(公告)日：2024-03-14

申请号：US18511731

申请日：2023-11-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chia-Yu WEI ,  Yen-Liang LIN ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146 ,  H01L31/0352 ,  H01L31/103

CPC classification number: H01L27/14649 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14698 ,  H01L31/035272 ,  H01L31/103 ,  H01L27/14621 ,  H01L27/14627 ,  H01L31/0336

Abstract: An image sensor device includes a semiconductor substrate, a radiation sensing member, a shallow trench isolation, and a color filter layer. The radiation sensing member is in the semiconductor substrate. An interface between the radiation sensing member and the semiconductor substrate includes a direct band gap material. The shallow trench isolation is in the semiconductor substrate and surrounds the radiation sensing member. The color filter layer covers the radiation sensing member.

公开(公告)号：US20230246047A1

公开(公告)日：2023-08-03

申请号：US18298351

申请日：2023-04-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Yin-Chieh HUANG ,  Wan-Chen HUANG ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

IPC: H01L27/146

CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14685

Abstract: An image sensor includes a substrate, a first photosensitive unit, a second photosensitive unit, a buffer layer, a dielectric grid, a first color filter, and a second color filter. The first photosensitive unit and the second photosensitive unit are in the substrate. The buffer layer covers the substrate, the first photosensitive unit and the second photosensitive unit. The dielectric grid is over the buffer layer and between the first photosensitive unit and the second photosensitive unit. The dielectric grid has a round top surface. The first color filter is over the first photosensitive unit. The first color filter is in contact with the round top surface and the buffer layer. The second color filter is over the second photosensitive unit.

公开(公告)号：US20220384514A1

公开(公告)日：2022-12-01

申请号：US17876858

申请日：2022-07-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Wei CHIA ,  Chun-Hao CHOU ,  Kai-Chun HSU ,  Kuo-Cheng LEE ,  Shyh-Fann TING

IPC: H01L27/146 ,  H01L21/28

Abstract: An image sensor includes a semiconductor substrate, a gate dielectric layer, a gate electrode, a protection oxide film, and a nitride hard mask. The gate dielectric layer is over the semiconductor substrate. The gate electrode is over the gate dielectric layer. An entirety of a first portion of the gate dielectric layer directly under the gate electrode is of uniform thickness. The protection oxide film is in contact with a top surface of the gate electrode. The gate dielectric layer extends beyond a sidewall of the protection oxide film. The nitride hard mask is in contact with a top surface of the protection oxide film.

公开(公告)号：US20220059581A1

公开(公告)日：2022-02-24

申请号：US16998498

申请日：2020-08-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Ying-Hao CHEN

IPC: H01L27/146 ,  H01L31/028 ,  H01L31/0216

Abstract: Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

公开(公告)号：US20210265399A1

公开(公告)日：2021-08-26

申请号：US16937306

申请日：2020-07-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng-Chien HSIEH ,  Kuo-Cheng LEE ,  Ying-Hao CHEN ,  Yun-Wei CHENG

IPC: H01L27/146

Abstract: An image sensor with stress adjusting layers and a method of fabrication the image sensor are disclosed. The image sensor includes a substrate with a front side surface and a back side surface opposite to the front side surface, an anti-reflective coating (ARC) layer disposed on the back side surface of the substrate, a dielectric layer disposed on the ARC layer, a metal layer disposed on the dielectric layer, and a stress adjusting layer disposed on the metal layer. The stress adjusting layer includes a silicon-rich oxide layer. The concentration profiles of silicon and oxygen atoms in the stress adjusting layer are non-overlapping and different from each other. The image sensor further includes oxide grid structure disposed on the stress adjusting layer.

公开(公告)号：US20200321379A1

公开(公告)日：2020-10-08

申请号：US16907788

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE

IPC: H01L27/146 ,  G02B5/30

Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.

公开(公告)号：US20200266225A1

公开(公告)日：2020-08-20

申请号：US16867997

申请日：2020-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yun-Wei CHENG ,  Yi-Hsing CHU ,  Yin-Chieh HUANG ,  Chun-Hao CHOU ,  Kuo-Cheng LEE ,  Hsun-Ying HUANG ,  Hsin-Chi CHEN

IPC: H01L27/146

Abstract: A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.

公开(公告)号：US20200212244A1

公开(公告)日：2020-07-02

申请号：US16818934

申请日：2020-03-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Yu WEI ,  Yu-Ting KAO ,  Yen-Liang LIN ,  Wen-I HSU ,  Hsun-Ying HUANG ,  Kuo-Cheng LEE ,  Hsin-Chi CHEN

IPC: H01L31/107 ,  H01L31/0216 ,  H01L31/0352 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/02 ,  H01L31/18 ,  H01L31/0224

Abstract: A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.

公开(公告)号：US20190252440A1

公开(公告)日：2019-08-15

申请号：US16390990

申请日：2019-04-22

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Volume CHIEN ,  Yun-Wei CHENG ,  Shiu-Ko JANGJIAN ,  Zhe-Ju LIU ,  Kuo-Cheng LEE ,  Chi-Cherng JENG

IPC: H01L27/146 ,  H01L31/0232 ,  H01L31/0216

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L31/02164 ,  H01L31/0232

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate. The image sensor device further includes a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter.