公开(公告)号：US20230087992A1

公开(公告)日：2023-03-23

申请号：US17695069

申请日：2022-03-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Che Hsieh ,  Yu-Chung Su ,  Chia-Ching Chu ,  Tzu-Yi Wang ,  Ta-Cheng Lien ,  Hsin-Chang Lee ,  Ching-Yu Chang ,  Yahru Cheng

IPC: G03F7/039 ,  G03F7/40 ,  G03F7/004 ,  G03F7/32

Abstract: Photosensitive polymers and their use in photoresists for photolithographic processes are disclosed. The polymers are copolymers, with at least one monomer that includes pendant polycyclic aromatic groups and a second monomer that includes an acidic leaving group (ALG). The polymers have high resistance to etching and high development contrast.

公开(公告)号：US11069528B2

公开(公告)日：2021-07-20

申请号：US16583949

申请日：2019-09-26

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ching-Yu Chang ,  Jung-Hau Shiu ,  Jen Hung Wang ,  Tze-Liang Lee

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/02 ,  H01L29/66 ,  H01L21/768

Abstract: A method for manufacturing an integrated circuit includes patterning a plurality of photomask layers over a substrate, partially backfilling the patterned plurality of photomask layers with a first material using atomic layer deposition, completely backfilling the patterned plurality of photomask layers with a second material using atomic layer deposition, removing the plurality of photomask layers to form a masking structure comprising at least one of the first and second materials, and transferring a pattern formed by the masking structure to the substrate and removing the masking structure. The first material includes a silicon dioxide, silicon carbide, or carbon material, and the second material includes a metal oxide or metal nitride material.

公开(公告)号：US10655019B2

公开(公告)日：2020-05-19

申请号：US14788321

申请日：2015-06-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Ya-Ling Cheng ,  Ching-Yu Chang

IPC: B05D1/00 ,  C09D5/00 ,  H01L21/027 ,  H01L21/67 ,  C09D7/20 ,  G03F7/16 ,  B05D5/12 ,  B05D7/00 ,  B05D3/02 ,  B05D3/12

Abstract: A coating technique and a priming material are provided. In an exemplary embodiment, the coating technique includes receiving a substrate and applying a priming material to the substrate. The applying of the priming material may include rotating the substrate to disperse the priming material radially on the substrate. In the embodiment, the priming material includes a solvent with at least six carbon atoms per molecule. A film-forming material is applied to the substrate on the priming material, and the application includes rotating the substrate to disperse the film-forming material radially on the substrate. The priming material and the film-forming material are evaporated to leave a component of the film-forming material in a solid form. In various embodiments, the priming material is selected based on at least one of an evaporation rate, a viscosity, or an intermolecular force between the priming material and the film-forming material.

公开(公告)号：US20200064740A1

公开(公告)日：2020-02-27

申请号：US16671401

申请日：2019-11-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： An-Ren Zi ,  Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/038 ,  G03F7/32 ,  G03F7/039 ,  G03F7/095

Abstract: A method of making a semiconductor device is provided. The method includes forming a photoresist material over a substrate, the photoresist material having a polymer that includes a backbone having a segment and a linking group, the segment including a carbon chain and an ultraviolet (UV) curable group, the UV curable group coupled to the carbon chain and to the linking group; performing a first exposure process that breaks the backbone of the polymer via decoupling the linking group from the connected UV curable group of each segment; performing a second exposure process to form a patterned photoresist layer; and developing the patterned photoresist layer.

公开(公告)号：US10514603B2

公开(公告)日：2019-12-24

申请号：US16525120

申请日：2019-07-29

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Han Lai ,  Ching-Yu Chang ,  Chen-Hau Wu

IPC: G03F7/039 ,  G03F7/20 ,  G03F7/32

Abstract: Shrinkage and mass losses are reduced in photoresist exposure and post exposure baking by utilizing a small group which will decompose. Alternatively a bulky group which will not decompose or a combination of the small group which will decompose along with the bulky group which will not decompose can be utilized. Additionally, polar functional groups may be utilized in order to reduce the diffusion of reactants through the photoresist.

公开(公告)号：US20190385902A1

公开(公告)日：2019-12-19

申请号：US16010352

申请日：2018-06-15

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wei-Ren Wang ,  Shing-Chyang Pan ,  Ching-Yu Chang ,  Wan-Lin Tsai ,  Jung-Hau Shiu ,  Tze-Liang Lee

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/033 ,  H01L21/02

Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over an underlying layer, patterning the first mask layer to form a first opening, forming a non-conformal film over the first mask layer, wherein a first thickness of the non-conformal film formed on the top surface of the first mask layer is greater than a second thickness of the non-conformal film formed on a sidewall surface of the first mask layer, performing a descum process, wherein the descum process removes a portion of the non-conformal film within the first opening, and etching the underlying layer using the patterned first mask layer and remaining portions of the non-conformal film as an etching mask.

公开(公告)号：US20190103272A1

公开(公告)日：2019-04-04

申请号：US15967480

申请日：2018-04-30

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Wan-Lin Tsai ,  Jung-Hau Shiu ,  Ching-Yu Chang ,  Jen Hung Wang ,  Shing-Chyang Pan ,  Tze-Liang Lee

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027 ,  H01L21/768 ,  H01L21/8238

Abstract: A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.

公开(公告)号：US10082734B2

公开(公告)日：2018-09-25

申请号：US14621512

申请日：2015-02-13

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Chung Su ,  Ching-Yu Chang

IPC: G03F7/09 ,  G03F7/32 ,  G03F7/36 ,  G03F7/039 ,  G03F7/038 ,  H01L21/308 ,  H01L21/027 ,  C09D5/00

CPC classification number: G03F7/091 ,  C09D5/006 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/322 ,  G03F7/325 ,  G03F7/36 ,  H01L21/0276 ,  H01L21/3081

Abstract: An anti-reflective coating (ARC) composition for use in lithography patterning and a method of using the same is disclosed. In an embodiment, the ARC composition comprises a polymer having a chromophore; an acid labile group (ALG), more than 5% by weight; a thermal acid generator; and an optional crosslinker. The method includes applying the ARC composition over a substrate; crosslinking the polymer to form an ARC layer; cleaving the ALG of the ARC layer to reduce a film density of the ARC layer; forming a resist layer over the ARC layer, patterning the resist layer, and etching the ARC layer. Due to reduced film density, the ARC layer has a high etching rate, thereby preserving the critical dimension (CD) of the resist pattern during the etching process.

公开(公告)号：US20180151351A1

公开(公告)日：2018-05-31

申请号：US15723582

申请日：2017-10-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chang Lilin ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/027 ,  G03F7/09 ,  G03F7/20 ,  G03F7/42

CPC classification number: H01L21/0276 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/091 ,  G03F7/095 ,  G03F7/423 ,  G03F7/70

Abstract: The present disclosure provides an embodiment of a method for lithography patterning. The method includes coating a photoresist layer over a substrate, wherein the photoresist layer includes a first polymer, and a first photo-acid generator (PAG), and a chemical additive mixed in a solvent; performing an exposing process to the photoresist layer; and performing a developing process to the photoresist layer to form a patterned photoresist layer. The chemical additive has a non-uniform distribution in the photoresist layer.

公开(公告)号：US09599896B2

公开(公告)日：2017-03-21

申请号：US14213302

申请日：2014-03-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chien-Chih Chen ,  Cheng-Han Wu ,  Ching-Yu Chang

IPC: G03F7/004 ,  H01L21/027 ,  H01L21/266 ,  G03F7/42 ,  H01L21/265 ,  H01L21/311 ,  C11D11/00 ,  G03F7/09 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C11D11/0047 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/423 ,  G03F7/427 ,  H01L21/0274 ,  H01L21/265 ,  H01L21/2658 ,  H01L21/266 ,  H01L21/31133 ,  H01L21/31138

Abstract: In an embodiment a radical inhibitor is included within a photoresist in order to reduce the amount of cross-linking that occurs during subsequent processing, such as an ion implantation process, that would otherwise form a crust within the photoresist. The crust can be removed in a separate process, such as a dry etch with an oxidative or reductive etchant. Alternatively, the crust may be treated to make it more hydrophyilic such that it can be removed simultaneously with the photoresist.