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公开(公告)号：US20150235767A1
公开(公告)日：2015-08-20
申请号：US14577392
申请日：2014-12-19
Applicant: TDK CORPORATION
Inventor： Junji AOTANI , Yoshihiko YANO , Yasunobu OIKAWA
Abstract: A thin film capacitor is provided with a lower electrode layer, a dielectric layer arranged on the lower electrode layer, and an upper electrode layer formed on the dielectric layer. An insulator patch material, circular when projected from above, is formed at a boundary of the dielectric layer and the upper electrode layer of the thin film capacitor of this invention. The circular insulator patch improves a withstand voltage, by reducing accumulation of charges.
Abstract translation: 薄膜电容器设置有下电极层，布置在下电极层上的电介质层和形成在电介质层上的上电极层。 在本发明的薄膜电容器的电介质层和上电极层的边界处形成有从上方突出的圆形的绝缘体贴片材料。 圆形绝缘体贴片通过减少电荷积累来提高耐受电压。
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公开(公告)号：US20130071554A1
公开(公告)日：2013-03-21
申请号：US13675528
申请日：2012-11-13
Applicant: TDK Corporation
Inventor： Yoshihiko YANO , Yasunobu OIKAWA
IPC: H01G9/00
CPC classification number: H01G4/0085 , H01G4/228 , H01G4/30 , H01G4/33 , H01G9/0029 , H01L28/40
Abstract: A method of manufacturing a thin film capacitor, having: a base electrode; dielectric layers consecutively deposited on the base electrode; an internal electrode deposited between the dielectric layers; an upper electrode deposited opposite the base electrode with the dielectric layers and the internal electrode being interposed therebetween; and a cover layer deposited on the upper electrode, has depositing an upper electrode layer which is to be the upper electrode, and a cover film which is to be the cover layer on the unsintered dielectric film which is to be the dielectric layer, to fabricate a lamination component, and sintering the lamination component.
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公开(公告)号：US20230268125A1
公开(公告)日：2023-08-24
申请号：US18012145
申请日：2020-12-24
Applicant: TDK Corporation
Inventor： Daiki ISHII , Yoshihiko YANO , Yuki YAMASHITA , Kenichi YOSHIDA , Tetsuhiro TAKAHASHI
CPC classification number: H01G4/06 , H01G4/33 , H01G4/005 , H05K1/18 , H05K2201/10015
Abstract: To provide a thin film capacitor in which warpage is less likely to occur. A thin film capacitor includes: a metal foil having roughened upper and lower surfaces; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a dielectric film covering the lower surface of the metal foil and made of a dielectric material having a thermal expansion coefficient smaller than that of the metal foil; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the first dielectric film without contacting the metal foil. The lower surface of the metal foil is thus covered with the dielectric film having a small thermal expansion coefficient, thereby making it possible to prevent the occurrence of warpage.
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公开(公告)号：US20230260698A1
公开(公告)日：2023-08-17
申请号：US18012834
申请日：2020-12-24
Applicant: TDK Corporation
Inventor： Daiki ISHII , Yoshihiko YANO , Yuki YAMASHITA , Kenichi YOSHIDA , Tetsuhiro TAKAHASHI
Abstract: To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 μm in the planar direction and less than 5 μm in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.
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公开(公告)号：US20230253446A1
公开(公告)日：2023-08-10
申请号：US18012809
申请日：2020-12-24
Applicant: TDK Corporation
Inventor： Yoshihiko YANO , Daiki ISHII , Kenichi YOSHIDA , Yuki YAMASHITA
Abstract: To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.
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Patent Agency Ranking
公开(公告)号：US20220085147A1
公开(公告)日：2022-03-17
申请号：US17470338
申请日：2021-09-09
Applicant: TDK CORPORATION
Inventor： Yasunori HARADA , Daiki ISHII , Yoshihiko YANO
IPC: H01L49/02
Abstract: A dielectric thin film element including a first electrode layer, a dielectric layer, and a second electrode layer located in this order from a substrate side. A relationship of 0.75≤Rsk1≤5.0 is satisfied, in which skewness of a roughness curve of the first electrode layer on the dielectric layer side is set as Rsk1.
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公开(公告)号：US20130071555A1
公开(公告)日：2013-03-21
申请号：US13675690
申请日：2012-11-13
Applicant: TDK CORPORATION
Inventor： Yoshihiko YANO , Yasunobu OIKAWA
IPC: H01G9/00
CPC classification number: H01G4/0085 , H01G4/228 , H01G4/30 , H01G4/33 , H01G9/0029 , H01L28/40
Abstract: A method of manufacturing a thin film capacitor, having: a base electrode; dielectric layers consecutively deposited on the base electrode; an internal electrode deposited between the dielectric layers; an upper electrode deposited opposite the base electrode with the dielectric layers and the internal electrode being interposed therebetween; and a cover layer deposited on the upper electrode, has depositing an upper electrode layer which is to be the upper electrode, and a cover film which is to be the cover layer on the unsintered dielectric film which is to be the dielectric layer, to fabricate a lamination component, and sintering the lamination component.
Abstract translation: 一种制造薄膜电容器的方法，其具有：基极; 电介质层连续沉积在基极上; 沉积在介电层之间的内部电极; 与基底电极相对地沉积有电介质层和内部电极之间的上部电极; 和沉积在上电极上的覆盖层，具有沉积作为上电极的上电极层和作为要作为电介质层的未烧结电介质膜上的覆盖层的覆盖膜，以制造 层压部件，并烧结层压部件。
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公开(公告)号：US20230268133A1
公开(公告)日：2023-08-24
申请号：US18012135
申请日：2020-12-24
Applicant: TDK Corporation
Inventor： Daiki ISHII , Yoshihiko YANO , Kenichi YOSHIDA , Tetsuhiro TAKAHASHI , Yuki YAMASHITA
Abstract: To provide a thin film capacitor in which peeling-off of an electrode layer is less likely to occur. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening and further contacting the dielectric film, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, the first electrode layer contacts not only the metal foil but also the dielectric film, making peeling of the first electrode layer less likely to occur.
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公开(公告)号：US20180132355A1
公开(公告)日：2018-05-10
申请号：US15804324
申请日：2017-11-06
Applicant: TDK CORPORATION
Inventor： Hitoshi SAITA , Yoshihiko YANO
CPC classification number: H05K1/182 , H01G4/008 , H01G4/306 , H01L21/4857 , H01L21/486 , H01L23/49822 , H01L23/49827 , H01L23/49838 , H01L23/642 , H01L24/16 , H01L2224/16227 , H01L2224/16265 , H01L2924/1205 , H01L2924/14 , H01L2924/15313 , H05K1/115 , H05K2201/10015
Abstract: A thin-film capacitor includes a pair of electrode layers composed of a first electrode layer configured to store positive charges and a second electrode layer configured to store negative charges; and a dielectric layer sandwiched between the pair of electrode layers along a lamination direction. The first electrode layer includes a first main electrode layer in contact with the dielectric layer. The second electrode layer includes a second main electrode layer and a second sub-electrode layer, both of which are formed of different metallic materials. The second sub-electrode layer is sandwiched between the dielectric layer and the second main electrode layer along the lamination direction. The second main electrode layer is formed of a material having a melting point lower than both a melting point of a material of the first electrode layer, or the first main electrode layer, and that of a material of the second sub-electrode layer.
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公开(公告)号：US20170110251A1
公开(公告)日：2017-04-20
申请号：US15296374
申请日：2016-10-18
Applicant: TDK CORPORATION
Inventor： Hitoshi SAITA , Masahiro YAMAKI , Yukihiro AZUMA , Yoshihiko YANO
CPC classification number: H01G4/33 , H01G4/008 , H01G4/012 , H01G4/252 , H01L27/11582 , H01L28/00 , H05K1/162
Abstract: In a thin film capacitor, a first electrode layer 1 has one or more regions B in which a distance Hb between a boundary surface I of the first electrode layer 1 and a dielectric layer 2, and a surface of the first electrode layer 1, becomes maximum, and an outer layer 12 has one or more regions T in which a distance Ht between the boundary surface I and a surface of the outer layer 12 becomes maximum, as well as one or more regions t in which the distance Ht between the boundary surface I and the surface of the outer layer 12 does not become maximum. A projected area SHb, a projected area SHt, and a projected area S, satisfy equations (1) and (2): 60%≦(SHb/S) (1); 60%≦(SHt/S) (2).
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