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68 条记录 (耗时 0.031 秒)

    MULTIPOINT SERVO PRESS MACHINE
    12.
    发明申请
    MULTIPOINT SERVO PRESS MACHINE 审中-公开
    多点伺服压力机

    公开(公告)号：US20110290126A1

    公开(公告)日：2011-12-01

    申请号：US13114202

    申请日：2011-05-24

    申请人： Takao Ito ,  Takashi Koshimizu ,  Hiroshi Nagase

    发明人： Takao Ito ,  Takashi Koshimizu ,  Hiroshi Nagase

    IPC分类号： B30B1/00

    CPC分类号： B30B1/266 ,  B30B15/148

    摘要： The invention provides a servo press machine including a slide moved up and down by multiple crank structures, the machine which provides perfect synchronism between main gears driving the respective crank structures and in which a compact, efficient power transmission structure can be implemented in a simple construction. In the servo press machine including the slide moved up and down by the multiple crank structures, synchronous distribution gears are driven by servo motors; the multiple main gears are driven in synchronism by the synchronous distribution gears; and each of the crank structures is driven by each of the main gears.

    摘要翻译： 本发明提供了一种伺服压力机，其包括由多个曲柄结构上下移动的滑块，该机器在驱动各个曲柄结构的主齿轮之间提供完美的同步，其中可以以简单的结构实现紧凑，有效的动力传递结构 。 在包括由多个曲柄结构上下移动的滑块的伺服压力机中，同步分配齿轮由伺服电机驱动; 多个主齿轮由同步分配齿轮同步驱动; 并且每个曲柄结构由每个主齿轮驱动。

    Connector Cover With Fastener
    13.
    发明申请
    Connector Cover With Fastener 审中-公开
    带紧固件的连接器盖

    公开(公告)号：US20110021064A1

    公开(公告)日：2011-01-27

    申请号：US12223226

    申请日：2007-01-26

    申请人： Shinsuke Shibata ,  Takao Ito ,  Hiromichi Komatsu

    发明人： Shinsuke Shibata ,  Takao Ito ,  Hiromichi Komatsu

    IPC分类号： H01R13/58

    CPC分类号： H01R13/5213 ,  H01R13/5812 ,  H01R2201/26

    摘要： A connector having a housing for accommodating therein a plurality of terminals, each terminal being connected to electric wires extending from the housing, and a cover for covering a part of the electric wires that extends from the housing. The connector is configured such that the connector cover is provided with a linear element insertion aperture through which a linear tying element for tying the electric wires passes. The connector cover also has a plurality of split portions for being combined with each other. The electric wires are tied together and fixedly arranged by the linear element and the split portions are locked together.

    摘要翻译： 一种连接器，具有用于容纳多个端子的壳体，每个端子连接到从壳体延伸的电线，以及用于覆盖从壳体延伸的一部分电线的盖。 连接器构造成使得连接器盖设置有线性元件插入孔，用于捆扎电线的线性捆扎元件穿过该线性元件插入孔。 连接器盖还具有多个用于彼此组合的分开部分。 电线被捆扎在一起并由线状元件固定地布置，并且分开的部分被锁定在一起。

    Lateral high-breakdown-voltage transistor having drain contact region
    14.
    发明授权
    Lateral high-breakdown-voltage transistor having drain contact region 有权
    具有漏极接触区域的横向高击穿电压晶体管

    公开(公告)号：US06989568B2

    公开(公告)日：2006-01-24

    申请号：US10748187

    申请日：2003-12-31

    申请人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

    发明人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/7393 ,  H01L29/7801 ,  H01L29/7835

    摘要： A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

    摘要翻译： 横向高击穿电压晶体管包括在硅衬底中形成的漏极 - 漏区和n + 彼此形成在与衬底绝缘的沟道上的栅极电极，形成在漏极区域中的n +漏极接触区域，经由漏极接触区域电连接到漏极区域的漏极布线， 与源极区域形成的基板接触区域以及与源极区域电连接并且还经由基板接触区域与半导体层连接的源极布线。 晶体管的特征在于，衬底接触区域具有与源极布线接触的相应部分，并且因此从源极布线的接触表面的内侧横向延伸到接触表面的外部。

    Mechanical press
    15.
    发明申请
    Mechanical press 有权
    机械压力机

    公开(公告)号：US20050022679A1

    公开(公告)日：2005-02-03

    申请号：US10631419

    申请日：2003-07-30

    申请人： Hisanobu Kanamaru ,  Takao Ito

    发明人： Hisanobu Kanamaru ,  Takao Ito

    IPC分类号： B30B1/26 ,  B30B15/00 ,  B30B15/04 ,  B30B5/00

    CPC分类号： B30B1/263 ,  B30B15/0035 ,  B30B15/041 ,  B30B15/068 ,  Y10T74/18208

    摘要： The object of this invention is to provide a mechanical press that presents no inconvenience in press operations despite its low height, providing great stability and excellent durability. The invention comprises a slide guiding mechanism provided at an upper part of the adjusting member for converting the rotary motion of the eccentric part of the crankshaft into a linear reciprocating motion and a position adjusting mechanism provided at a lower part, as well as an adjusting member that advances and retracts relative to the slide, which serves for the prevention of rotation and guidance.

    摘要翻译： 本发明的目的是提供一种机械冲压机，尽管其低的高度，在压力操作中也不会带来任何不便，提供极大的稳定性和优异的耐久性。 本发明包括一个滑动引导机构，其设置在调节构件的上部，用于将曲轴的偏心部分的旋转运动转换为直线往复运动，以及设置在下部的位置调节机构以及调节构件 相对于滑块进退，这用于防止旋转和引导。

    Lateral high-breakdown-voltage transistor
    17.
    发明授权
    Lateral high-breakdown-voltage transistor 有权
    横向高击穿电压晶体管

    公开(公告)号：US06489653B2

    公开(公告)日：2002-12-03

    申请号：US09746223

    申请日：2000-12-26

    申请人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

    发明人： Kiminori Watanabe ,  Keisuke Matsuoka ,  Takao Ito

    IPC分类号： H01L2978

    CPC分类号： H01L29/7816 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/7393 ,  H01L29/7801 ,  H01L29/7835

    摘要： A lateral high-breakdown-voltage transistor comprises an n− drain region and an n+ source region formed in a p− silicon substrate, separated from each other, a gate electrode formed on a channel, insulated from the substrate, an n+ drain contact region formed in the drain region, drain wiring electrically connected to the drain region via the drain contact region, a p+ substrate contact region formed in contact with the source region, and source wiring electrically connected to the source region and also connected to the semiconductor layer via the substrate contact region. The transistor is characterized in that the substrate contact regions have respective portions made to be in contact with the source wiring, and accordingly laterally extend from inside the contact surface of the source wiring to outside the contact surface.

    摘要翻译： 横向高击穿电压晶体管包括形成在p硅衬底中的n沟道区和n +源极区，其彼此分离，形成在与衬底绝缘的沟道上的栅电极，n +漏极接触区域 形成在所述漏极区域中的漏极布线，经由所述漏极接触区域电连接到所述漏极区域的漏极布线，与所述源极区域接触形成的p +基板接触区域以及与所述源极区域电连接并且还连接到所述半导体层通孔 基板接触区域。 晶体管的特征在于，衬底接触区域具有与源极布线接触的相应部分，并且因此从源极布线的接触表面的内侧横向延伸到接触表面的外部。

    Amide derivatives and nociceptin antagonists
    18.
    发明授权
    Amide derivatives and nociceptin antagonists 失效
    酰胺衍生物和伤害感受肽拮抗剂

    公开(公告)号：US06410561B1

    公开(公告)日：2002-06-25

    申请号：US09646781

    申请日：2000-09-22

    申请人： Hisashi Shinkai ,  Takao Ito ,  Hideki Yamada

    发明人： Hisashi Shinkai ,  Takao Ito ,  Hideki Yamada

    IPC分类号： A61K3147

    CPC分类号： A61K31/4184 ,  A61K31/47 ,  A61K31/473 ,  A61K31/498 ,  C07C235/42 ,  C07D215/38 ,  C07D215/42 ,  C07D217/22 ,  C07D219/12 ,  C07D221/16 ,  C07D235/28 ,  C07D401/12 ,  C07D405/12 ,  C07D409/12 ,  C07D413/12

    摘要： The present invention relates to a compound of the formula [1′] wherein R2 is lower alkyl optionally substituted by hydroxy, amino and the like, ring B is phenyl, thienyl and the like, E is a single bond, —O—, —S— and the like, ring G is aryl, heterocyclic group and the like, R5 is halogen atom, hydroxy, lower alkyl optionally substituted by halogen atom etc., and the like, t is 0 or an integer of 1 to 5, when t is an integer of 2 to 5, each R5 may be the same or different, m is 0 or an integer of 1 to 8, and n is 0 or an integer of 1 to 4, and a nociceptin antagonist containing compound [1′] as an active ingredient. The compound [1′] shows, due to nociceptin antagonistic action, analgesic effect against sharp pain such as postoperative pain and the like. The present invention also relates to the use of certain amide derivative inclusive of compound [1′] as a nociceptin antagonist or analgesic.

    摘要翻译： 本发明涉及式[1']化合物，其中R 2为任选被羟基，氨基等取代的低级烷基，环B为苯基，噻吩基等，E为单键，-O-， - S-等，环G是芳基，杂环基等，R5是卤素原子，羟基，任选被卤素原子取代的低级烷基等，t是0或1〜5的整数，当 t为2〜5的整数，每个R 5可以相同或不同，m为0或1〜8的整数，n为0或1〜4的整数，含有化合物[1'的伤害杀伤肽拮抗剂 ]作为活性成分。 化合物[1']表示，由于伤害感受器拮抗作用，对急性疼痛如手术后疼痛等的镇痛作用。 本发明还涉及包含化合物[1']的某些酰胺衍生物作为伤害感受肽拮抗剂或止痛剂的用途。

    Antifungal agents
    19.
    发明授权
    Antifungal agents 失效
    抗真菌剂

    公开(公告)号：US6015925A

    公开(公告)日：2000-01-18

    申请号：US158093

    申请日：1998-09-22

    申请人： Yukio Kawazu ,  Toshimitsu Suzuki ,  Masayuki Yuasa ,  Yuichi Yokomizo ,  Toshiro Majima ,  Takao Ito ,  Takuji Nakashima ,  Akira Nozawa

    发明人： Yukio Kawazu ,  Toshimitsu Suzuki ,  Masayuki Yuasa ,  Yuichi Yokomizo ,  Toshiro Majima ,  Takao Ito ,  Takuji Nakashima ,  Akira Nozawa

    IPC分类号： C07C211/27 ,  C07C211/00

    CPC分类号： C07C211/27

    摘要： This invention relates to compounds represented by the following formula (1): ##STR1## wherein R.sup.1 represents a substituted or unsubstituted aromatic hydrocarbon group having 6 to 18 carbon atoms, R.sup.2 represents a hydrogen atom or a substituted or unsubstituted aromatic hydrocarbon group having 6 to 18 carbon atoms, R.sup.3 represents an alkyl group having 1 to 4 carbon atoms, R.sup.4 represents a substituted or unsubstituted phenyl group or an aliphatic hydrocarbon group containing at least four .pi. electrons, and m and n individually represent integers of from 1 to 4, or salts thereof, and also to compositions containing the same. These compounds have antifungal activities and are useful as drugs and the like.

    摘要翻译： 本发明涉及由下式（1）表示的化合物：其中R1表示取代或未取代的碳原子数6〜18的芳香族烃基，R2表示氢原子或取代或未取代的碳原子数6〜18的芳香族烃基 ，R 3表示碳原子数1〜4的烷基，R 4表示取代或未取代的苯基或含有至少4个π电子的脂肪族烃基，m和n分别表示1〜4的整数或其盐， 以及含有该组合物的组合物。 这些化合物具有抗真菌活性，可用作药物等。

    Semiconductor integrated circuit device
    20.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号：US5585664A

    公开(公告)日：1996-12-17

    申请号：US595964

    申请日：1996-02-06

    申请人： Takao Ito

    发明人： Takao Ito

    IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/522 ,  H01L23/552

    CPC分类号： H01L23/5222 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/3011

    摘要： Protection lines are arranged on both sides of and above a signal line, and ground lines are formed outside the protection lines and a ground line is formed above the protection line. A bias circuit is connected to the signal line and protection lines to set the potential of the protection lines equal to that of the signal line and set the impedance of the protection lines low. The signal line processing a small signal, is surrounded by the low-impedance protection lines of the same potential as that of the signal line, and thus crosstalk can be prevented from occurring between the lines, without causing the components of a high-frequency analog signal to attenuate.

    摘要翻译： 保护线布置在信号线的两侧和上方，并且接地线形成在保护线的外侧，并且在保护线之上形成接地线。 偏置电路连接到信号线和保护线，以将保护线的电位设置为等于信号线的电位，并将保护线的阻抗设置为低电平。 处理小信号的信号线由与信号线相同电位的低阻抗保护线包围，从而可以防止在线路之间发生串扰，而不会导致高频模拟 信号衰减。