公开(公告)号：US08199269B2

公开(公告)日：2012-06-12

申请号：US12216445

申请日：2008-07-03

申请人： Takashi Hattori ,  Mutsuko Hatano

发明人： Takashi Hattori ,  Mutsuko Hatano

IPC分类号： G02F1/136 ,  G02F1/1333 ,  H01L21/00 ,  H01L21/469

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： A method for manufacturing a thin film transistor including a step of forming a polymer film (a) to a layer above a support substrate, a step of forming a semiconductor element above the polymer film (a), and a step of separating the support substrate from the polymer film (a) formed with the semiconductor element in which the polymer film (a) has a thickness of 1 μm or more and 30 μm or less, a transmittance of 80% or higher to a visible light at a wavelength of 400 nm or more and 800 nm or less, a 3 wt % loss temperature of 300° C. or higher, and a melting point of 280° C. or higher.

摘要翻译： 一种制造薄膜晶体管的方法，包括在支撑基板上形成聚合物膜（a）的步骤，在聚合物膜（a）上方形成半导体元件的步骤，以及分离支撑基板 从聚合物膜（a）的厚度为1μm以上且30μm以下的半导体元件形成的聚合物膜（a）的透射率为波长400的可见光的80％以上 以上且800nm以下，3重量％的损失温度为300℃以上，熔点为280℃以上。

公开(公告)号：US20120318337A1

公开(公告)日：2012-12-20

申请号：US13521487

申请日：2012-02-17

申请人： Keiji Watanabe ,  Takashi Hattori ,  Mieko Matsumura ,  Ryuta Tsuchiya ,  Mutsuko Hatano

发明人： Keiji Watanabe ,  Takashi Hattori ,  Mieko Matsumura ,  Ryuta Tsuchiya ,  Mutsuko Hatano

IPC分类号： H01L31/076

CPC分类号： H01L31/075 ,  H01L31/022441 ,  H01L31/0504 ,  H01L31/0508 ,  H01L31/0512 ,  H01L31/1804 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In a conventional solar cell, it has been difficult to ensure a sufficient light absorption and simultaneously to prevent current loss due to the reduction of the moving distance of electrons and holes. As a means for solving this difficulty, a plurality of a p-i-n junctions are stacked through an insulating film and are connected in parallel with each other using through-electrodes. In this case, the through-electrodes and the p-i-n junctions are connected through the p-layer or the n-layer, thereby moving electrons and holes in opposite directions and generating output current. In addition, the i-layer is made thicker than the p-layer and the n-layer in each of the p-i-n junctions, thereby ensuring a sufficient light absorption and simultaneously preventing current loss.

摘要翻译： 在常规太阳能电池中，难以确保足够的光吸收并且同时防止由于电子和空穴的移动距离的减小导致的电流损耗。 作为解决这个困难的手段，通过绝缘膜层叠多个p-i-n结，并且使用贯通电极彼此并联连接。 在这种情况下，贯通电极和p-i-n结通过p层或n层连接，从而沿相反方向移动电子和空穴并产生输出电流。 此外，i层比p-i-n结中的每一个中的p层和n层厚，从而确保足够的光吸收并同时防止电流损耗。

公开(公告)号：US08259280B2

公开(公告)日：2012-09-04

申请号：US12509581

申请日：2009-07-27

申请人： Takashi Hattori ,  Midori Kato ,  Mutsuko Hatano ,  Takeshi Satou

发明人： Takashi Hattori ,  Midori Kato ,  Mutsuko Hatano ,  Takeshi Satou

IPC分类号： G02F1/1333 ,  G02F1/1335

CPC分类号： G02F1/133345 ,  G02F1/133528 ,  G02F1/1362 ,  G02F2001/133567

摘要： An image display device having a display panel in which a first substrate and a second substrate are disposed to each other, in which the first substrate includes an insulating substrate composed of a resin, a circuit layer having a circuit where a plurality of Thin-film transistors are arranged in a matrix, and a polarizer disposed between the insulating substrate and the circuit layer, the insulating substrate has a thickness of 20 μm or more and 150 μm or less, a transmittance of 80% or more for a visible light at a wavelength of 400 nm or more and 800 nm or less, and a 3% weight reduction temperature of 300° C. or higher, and has no melting point or has a melting point of 300° C. or higher.

摘要翻译： 一种具有显示面板的图像显示装置，其中第一基板和第二基板彼此配置，其中第一基板包括由树脂构成的绝缘基板，电路层具有多个薄膜 晶体管布置在矩阵中，并且偏振器设置在绝缘基板和电路层之间，绝缘基板的厚度为20μm以上且150μm以下，对于可见光的透射率为80％以上 波长400nm以上且800nm以下，3％重量减少温度为300℃以上，无熔点或熔点为300℃以上。

公开(公告)号：US08139173B2

公开(公告)日：2012-03-20

申请号：US12216581

申请日：2008-07-08

申请人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Mieko Matsumura

发明人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Mieko Matsumura

IPC分类号： G02F1/133 ,  G02F1/1343

CPC分类号： G02F1/1368 ,  G02F1/136209 ,  G02F1/136227 ,  G02F2001/13613

摘要： A liquid crystal display, having an improved application of electric field to the molecules of liquid crystal, includes a substrate and a pixel array bonded to the surface of this substrate, and the pixel array includes at least a thin-film transistor and a pixel electrode connected with this thin-film transistor, and the pixel electrode is formed in a layer higher than the thin-film transistor in relation to the substrate.

摘要翻译： 具有改善对液晶分子的电场应用的液晶显示器包括基板和与该基板的表面接合的像素阵列，像素阵列至少包括薄膜晶体管和像素电极 与该薄膜晶体管连接，并且像素电极相对于衬底形成在比薄膜晶体管高的层中。

公开(公告)号：US07977675B2

公开(公告)日：2011-07-12

申请号：US12423053

申请日：2009-04-14

申请人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Hiroyuki Uchiyama

发明人： Tetsufumi Kawamura ,  Takeshi Sato ,  Mutsuko Hatano ,  Hiroyuki Uchiyama

IPC分类号： H01L29/12

CPC分类号： H01L27/1225 ,  H01L27/1214 ,  H01L27/127 ,  H01L29/7869

摘要： A metallic oxide semiconductor device with high performance and small variations. It is a field effect transistor using a metallic oxide film for the channel, which includes a channel region and a source region and comprises a drain region with a lower oxygen content than the channel region in the metallic oxide, in which the channel region exhibits semiconductor characteristics and the oxygen content decreases with depth below the surface.

摘要翻译： 具有高性能和小变化的金属氧化物半导体器件。 它是一种使用金属氧化物膜作为沟道的场效应晶体管，其包括沟道区和源极区，并且包括具有比金属氧化物中的沟道区更低的氧含量的漏区，其中沟道区表现出半导体 特性和氧含量随着表面深度的减小而减小。

公开(公告)号：US07834353B2

公开(公告)日：2010-11-16

申请号：US12021714

申请日：2008-01-29

申请人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

发明人： Mikio Hongo ,  Sachio Uto ,  Mineo Nomoto ,  Toshihiko Nakata ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Makoto Ohkura

IPC分类号： H01L31/0376 ,  H01L21/00

CPC分类号： H01L29/04 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0665 ,  B23K26/0732 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.

摘要翻译： 一种具有形成在玻璃基板上的像素部分和驱动电路部分的TFT器件; 其中构成所述驱动电路的晶体管的至少有源层（有源区）包括多晶硅，其包括不具有与电流流动方向交叉的晶界的晶体。

公开(公告)号：US07666769B2

公开(公告)日：2010-02-23

申请号：US11702576

申请日：2007-02-06

申请人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

发明人： Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Mitsuharu Tai ,  Hajime Akimoto

IPC分类号： H01L21/20

CPC分类号： H01L21/02683 ,  G02F1/13454 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/04

摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.

摘要翻译： 提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。 形成在设置在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光束扫描 重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的离散重整区域。 在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致 电影。

公开(公告)号：US07586554B2

公开(公告)日：2009-09-08

申请号：US11583882

申请日：2006-10-20

申请人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

发明人： Daisuke Ryuzaki ,  Kazuyoshi Torii ,  Mutsuko Hatano ,  Daisuke Sonoda ,  Toshiki Kaneko

IPC分类号： G02F1/136

CPC分类号： G02F1/1362 ,  G02F1/133345 ,  G02F2202/02 ,  H01L21/02126 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/3185 ,  Y10T428/10

摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.

摘要翻译： 本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置 以低成本生产的扁平性。 使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。 层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。 抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

公开(公告)号：US07456913B2

公开(公告)日：2008-11-25

申请号：US11878285

申请日：2007-07-23

申请人： Mitsuharu Tai ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Hideo Sato

发明人： Mitsuharu Tai ,  Mutsuko Hatano ,  Shinya Yamaguchi ,  Takeo Shiba ,  Hideo Sato

IPC分类号： G02F1/136

CPC分类号： H01L27/1296 ,  G02F1/13624 ,  G02F1/136277 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/78621 ,  H01L29/78627

摘要： A large number of pixels PXL are arranged in a matrix fashion in a display region DSP on an insulating substrate. Disposed around the display region DSP are a drain-side pixel-driving circuit including a drain shift register DSR, a digital-to-analog converter circuit DAC, a drain level shifter DLS, a buffer BF and sampling switches SSW; and a gate-side pixel-driving circuit including a gate shift register GSR and a gate level shifter GLS, and various kinds of circuits. Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the respective circuits.

摘要翻译： 大量像素PXL以矩阵方式排列在绝缘基板上的显示区域DSP中。 在显示区域DSP周围设置有漏极侧像素驱动电路，其包括漏极移位寄存器DSR，数模转换器电路DAC，漏极电平移位器DLS，缓冲器BF和采样开关SSW; 以及包括栅极移位寄存器GSR和栅极电平移位器GLS的栅极侧像素驱动电路以及各种电路。 构成需要这些像素驱动电路的高速操作的电路区域SX的薄膜晶体管的电流迁移率通过优化各个电路的多个布局，配置和配置的组合来满足各个电路特有的规格而得到改善。

公开(公告)号：US07335915B2

公开(公告)日：2008-02-26

申请号：US11585967

申请日：2006-10-25

申请人： Yoshiaki Toyota ,  Mutsuko Hatano

发明人： Yoshiaki Toyota ,  Mutsuko Hatano

IPC分类号： H01L29/04

CPC分类号： H01L27/12 ,  H01L27/1248

摘要： A technique for improving the manufacturing yield of an image displaying device is disclosed. A fabrication method of the image displaying device includes the steps of forming on an insulative substrate a plurality of island-like semiconductor layers, forming a gate insulating film on the island-like semiconductor layers, defining more than one contact hole in the gate insulating film, forming a gate electrode on the gate insulator film for causing the island-like semiconductor layer to be in contact with the gate insulator film, forming a source region, a drain region and a channel region interposed therebetween in the island-like semiconductor layer, forming an interlayer dielectric (ILD) film on the gate electrode, forming source/drain electrodes contacted with the source and drain regions and the ILD film, defining a through-hole(s) after formation of the source/drain electrodes, and removing a contact portion of the island-like semiconductor layer and gate electrode.

摘要翻译： 公开了一种提高图像显示装置的制造成品率的技术。 图像显示装置的制造方法包括以下步骤：在绝缘基板上形成多个岛状半导体层，在岛状半导体层上形成栅极绝缘膜，在栅极绝缘膜中限定多于一个的接触孔 在所述栅极绝缘膜上形成用于使所述岛状半导体层与所述栅极绝缘膜接触的栅电极，在所述岛状半导体层中形成源极区域，漏极区域和沟道区域， 在栅电极上形成层间电介质（ILD）膜，形成与源极和漏极区域接触的源/漏电极和ILD膜，在形成源极/漏极之后限定通孔，并且去除 岛状半导体层和栅电极的接触部分。