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58 条记录 (耗时 0.031 秒)

    Catalysts for hydrotreatment of heavy hydrocarbon oils containing asphaltenes
    11.
    发明授权
    Catalysts for hydrotreatment of heavy hydrocarbon oils containing asphaltenes 失效
    用于加氢处理含有沥青质的重质烃油的催化剂

    公开(公告)号：US4422960A

    公开(公告)日：1983-12-27

    申请号：US210059

    申请日：1980-12-14

    申请人： Yoshimi Shiroto ,  Takeo Ono ,  Sachio Asaoka ,  Munekazu Nakamura

    发明人： Yoshimi Shiroto ,  Takeo Ono ,  Sachio Asaoka ,  Munekazu Nakamura

    IPC分类号： B01J21/00 ,  B01J23/74 ,  B01J23/85 ,  B01J23/882 ,  B01J23/887 ,  B01J35/00 ,  B01J35/10 ,  C10G45/04 ,  C10G47/10 ,  C10G55/06 ,  C10G65/04 ,  C10G65/12 ,  B01J21/04 ,  B01J23/22 ,  B01J23/24 ,  B01J27/04

    CPC分类号： B01J23/882 ,  B01J23/85 ,  B01J23/8872 ,  B01J35/10 ,  B01J35/002 ,  B01J35/1019 ,  B01J35/1061 ,  B01J35/108 ,  C10G2300/107

    摘要： A catalyst for hydrotreating a heavy hydrocarbon oil containing asphaltenes comprises a porous carrier composed of one or more inorganic oxides of at least one element selected from among those of Groups II, III and IV of the Periodic Table, and at least one catalytic metal component composited with the carrier. The metal of the catalytic metal component is selected from among those of Groups VB, VIB, VIII and IB of the Periodic Table. The catalyst contains about 1 to 30% by weight of such catalytic metal component and has the following pore characteristics with regard to its pores having a diameter of 75 .ANG. or more: an average pore diameter APD of about 180 to 500 .ANG., a total pore volume PV, expressed in cc/g, being equal to or greater than a value X ##EQU1## the volume of pores with a diameter of about 180 to 500 .ANG. being at least about 0.2 cc/g, the volume of pores with a diameter of at least 1,500 .ANG. being not greater than about 0.03 cc/g, and a total surface area being at least about 60 m.sup.2 /g. The catalyst has an average catalyst diameter ACD, expressed in millimeters, of not greater than a value of the formula, ACD=(APD/100).sup.0.5. Disclosed also are a method of preparing such a catalyst, and a process for hydrotreating a heavy hydrocarbon oil containing asphaltenes in the presence of such a catalyst.

    摘要翻译： 用于加氢处理含有沥青质的重烃油的催化剂包括由一种或多种选自元素周期表II，III和IV族中的至少一种元素的一种或多种无机氧化物组成的多孔载体，以及至少一种催化金属组分 与承运人。 催化金属组分的金属选自元素周期表的VB，VIB，VIII和IB族。 该催化剂含有约1至30重量％的这种催化金属组分，并且对于其直径为75埃或更高的孔具有以下孔特性：平均孔径APD为约180至500安培姆，总孔 体积PV以cc / g表示，等于或大于直径为约180至500的孔的体积至少约0.2cc / g，具有直径的孔的体积 至少1500安培角不大于约0.03cc / g，总表面积为至少约60m 2 / g。 催化剂的平均催化剂直径ACD（以毫米表示）不大于式的值ACD =（APD / 100）0.5。 还公开了制备这种催化剂的方法，以及在这种催化剂存在下，对含有沥青质的重质烃油进行加氢处理的方法。

    Optical device with an asymmetric dual quantum well structure
    16.
    发明授权
    Optical device with an asymmetric dual quantum well structure 失效
    具有不对称双量子阱结构的光器件

    公开(公告)号：US5569934A

    公开(公告)日：1996-10-29

    申请号：US535349

    申请日：1995-09-28

    申请人： Kazuhito Fujii ,  Takeo Ono

    发明人： Kazuhito Fujii ,  Takeo Ono

    IPC分类号： G02F1/025 ,  G02F1/015 ,  G02F1/017 ,  H01L31/14 ,  H01S5/00 ,  H01S5/062 ,  H01S5/34 ,  H01S5/50 ,  H01L29/205 ,  H01L31/0304

    CPC分类号： B82Y20/00 ,  G02F1/01725 ,  H01S5/34 ,  H01S5/5045 ,  G02F1/01708 ,  G02F2001/0151 ,  G02F2001/01741 ,  G02F2201/307 ,  G02F2203/055 ,  H01S5/06206 ,  H01S5/3408

    摘要： An optical device includes an asymmetric dual quantum well (ADQW) structure which is comprised of a plurality (at least two) of different semiconductor quantum well layers coupled to each other. In the ADQW structure, the width of a deeper quantum well layer having a narrower band gap is made narrower than that of a less deeper quantum well layer having a wider band gap such that the shift of an exciton wavelength is scarcely caused due to the quantum confined Stark effect by the application of an electric field in a predetermined range. As a result, only a refractive index of the ADQW structure is changed, but an absorption factor is scarcely changed for a given range of wavelength by the application of the electric field. Further, there is provided a member for applying an electric field to the asymmetric dual quantum well structure.

    摘要翻译： 光学器件包括由彼此耦合的多个（至少两个）不同的半导体量子阱层组成的非对称双量子阱（ADQW）结构。 在ADQW结构中，具有较窄带隙的较深量子阱层的宽度比具有较宽带隙的较深的量子阱层的宽度窄，使得激子波长的移动几乎不会由于量子 通过在预定范围内施加电场来限制Stark效应。 结果，仅改变ADQW结构的折射率，但是通过施加电场，给定波长范围内的吸收系数几乎不变化。 此外，提供了用于向非对称双量子阱结构施加电场的构件。

    Semiconductor optical filter and an optical communication system using the same
    17.
    发明授权
    Semiconductor optical filter and an optical communication system using the same 失效
    半导体光滤波器及其使用的光通信系统

    公开(公告)号：US5440581A

    公开(公告)日：1995-08-08

    申请号：US2276

    申请日：1993-01-08

    申请人： Takeo Ono ,  Jun Nitta

    发明人： Takeo Ono ,  Jun Nitta

    IPC分类号： G02F1/015 ,  G02F1/025 ,  H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/12 ,  H01S5/34 ,  H01S5/50 ,  H01S3/08

    CPC分类号： B82Y20/00 ,  H01S5/5045 ,  H01S5/12 ,  H01S5/3418

    摘要： A semiconductor optical filter that includes a semiconductor substrate and a laser structure formed on the substrate. The laser structure includes an active layer of a quantum well structure and a grating formed along the active layer. The active layer is constructed to have a ground state level and an energy level other than the ground state level. A saturation gain of the ground state level is set to a value less than an internal loss, and the other energy level is set to permit an increase in the amount of carriers injected into the laser structure. The laser structure is typically a distributed feedback type laser structure. Anti-reflection coatings may be formed on the end surfaces of the laser structure.

    摘要翻译： 一种半导体滤光器，包括半导体衬底和形成在衬底上的激光器结构。 激光器结构包括量子阱结构的有源层和沿有源层形成的光栅。 有源层被构造成具有基态状态电平和除基态电平以外的能级。 基态状态电平的饱和增益被设定为小于内部损耗的值，另一个能级被设定为允许注入到激光器结构中的载流子的量增加。 激光器结构通常是分布式反馈型激光器结构。 可以在激光结构的端面上形成防反射涂层。

    Method of transferring Bloch lines
    18.
    发明授权
    Method of transferring Bloch lines 失效
    转移布洛赫线的方法

    公开(公告)号：US5172336A

    公开(公告)日：1992-12-15

    申请号：US734098

    申请日：1991-07-23

    申请人： Fumihiko Saito ,  Takeo Ono ,  Hitoshi Oda ,  Akira Shinmi

    发明人： Fumihiko Saito ,  Takeo Ono ,  Hitoshi Oda ,  Akira Shinmi

    IPC分类号： G11C19/08

    CPC分类号： G11C19/0816 ,  G11C19/0858

    摘要： A transfer method for transferring Bloch lines present in the magnetic wall of a magnetic section formed in a magnetic thin film along the magnetic wall includes the steps of distributing a predetermined soft magnetic material layer pattern on the magnetic thin film, applying a magnetic field to the soft magnetic material layer pattern parallel to the film surface of the magnetic thin film to form a potential well in the magnetic thin film, positioning the Bloch lines in the potential well, and varying the direction of the magnetization of the soft magnetic material layer pattern in a plane parallel to the film surface to move the potential well along the magnetic wall and transfer the Bloch lines.

    摘要翻译： 在磁性薄膜上形成的形成在磁性薄膜上的磁性部分的磁性壁中存在的Bloch线的传送方法包括以下步骤：在磁性薄膜上分配预定的软磁性材料层图案，向磁性薄膜施加磁场 软磁材料层图案平行于磁性薄膜的薄膜表面，以在磁性薄膜中形成势阱，将布洛赫线定位在势阱中，并改变软磁材料层图案的磁化方向 平行于膜表面的平面沿着磁壁移动势阱并转移布洛赫线。

    Process for transferring bloch lines formed in a magnetic wall of a magnetic domain, and a magnetic memory apparatus for recording and reproduction of information by transferring bloch lines in utilizing said transferring process
    20.
    发明授权
    Process for transferring bloch lines formed in a magnetic wall of a magnetic domain, and a magnetic memory apparatus for recording and reproduction of information by transferring bloch lines in utilizing said transferring process 失效
    用于转印形成在磁畴的磁壁中的卷曲线的方法，以及用于通过在利用所述转印过程中转印卷曲线来记录和再现信息的磁存储装置

    公开(公告)号：US4974201A

    公开(公告)日：1990-11-27

    申请号：US72668

    申请日：1987-07-13

    申请人： Takeo Ono ,  Hitoshi Oda

    发明人： Takeo Ono ,  Hitoshi Oda

    IPC分类号： G11C19/08

    CPC分类号： G11C19/0841

    摘要： A process for transferring Bloch lines formed in a magnetic wall of a magnetic domain and a magnetic memory apparatus for recording/reproducing information in utilizing Bloch lines formed in the magnetic wall of the magnetic domain as a information carrier are disclosed. The process comprises steps of forming a positive or negative magnetic charge area in the magnetic wall, thereby attaching a Bloch line to the area, and moving the magnetic charge area, thereby moving the Bloch line. The apparatus comprises a memory substrate having a stripe-shaped magnetic domain, a way to write Bloch lines in the magnetic wall of the stripe-shaped magnetic domain according to input information, a way to read the Bloch lines so stored to reproduce the information in the form of electric signals and a way to apply a rotating magnetic field parallel to the plane of the memory substrate, to the stripe-shaped magnetic domain, to move the Bloch lines along the magnetic wall. As a result, the Bloch lines so written are transferred in succession to another location in the domain or to a read-out area.

    摘要翻译： 公开了一种用于传输形成在磁畴的磁壁中的Bloch线和用于在形成在磁畴的磁壁中的Bloch线作为信息载体来记录/再现信息的磁存储装置的处理。 该方法包括在磁壁中形成正或负磁荷区域的步骤，从而将Bloch线连接到该区域，并移动磁荷区域，从而移动Bloch线。 该装置包括具有条形磁畴的存储器衬底，根据输入信息将Bloch线写入条形磁畴的磁壁中的方式，读取如此存储的Bloch线以便再现信息的方式 电信号的形式和将平行于存储器基板的平面的旋转磁场施加到条形磁畴的方式，以沿着磁壁移动布洛赫线。 因此，如此写入的Bloch行连续转移到域中的另一个位置或读取区域。