公开(公告)号：US08697026B2

公开(公告)日：2014-04-15

申请号：US12451607

申请日：2008-05-21

Applicant: Takeshi Tanaka ,  Hiromichi Kataura ,  Hehua Jin ,  Yasumitsu Miyata

Inventor： Takeshi Tanaka ,  Hiromichi Kataura ,  Hehua Jin ,  Yasumitsu Miyata

IPC: D01F9/12 ,  D01C5/00 ,  B01J19/08 ,  B04B15/02 ,  B01D11/02 ,  B32B9/00

CPC classification number: H01L51/0048 ,  B01D57/02 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/172 ,  C01B2202/22 ,  H01L51/0025 ,  Y10T428/2918

Abstract: Provided is a method of electrophoresis of carbon nanotube for separating them into metallic carbon nanotubes and semiconducting carbon nanotubes, and the method comprises a step of electrifying a carbon nanotube sealed gel in which carbon nanotubes are dispersed in a gel.According to the separation method, metallic CNT and semiconducting CNT may be efficiently and heavily separated and purified from each other in CNT containing both the two within a short period of time and in a simplified manner by the use of inexpensive facilities and according to a simple process, and the method can be readily scaled up, in which CNT can be separated industrially extremely advantageously.

Abstract translation: 提供了一种碳纳米管的电泳方法，用于将它们分离成金属碳纳米管和半导体碳纳米管，该方法包括使碳纳米管密封凝胶充电的步骤，其中将碳纳米管分散在凝胶中。 根据分离方法，金属CNT和半导体CNT可以在短时间内在含有两者的CNT中彼此有效且高度地分离和纯化，并且通过使用廉价的设备并且简单地 工艺，并且该方法可以容易地放大，其中CNT可以在工业上非常有利地分离。

公开(公告)号：US20140097670A1

公开(公告)日：2014-04-10

申请号：US14119125

申请日：2011-06-30

Applicant: Takeshi Tanaka

Inventor： Takeshi Tanaka

IPC: B60L1/00

CPC classification number: B60L1/00 ,  B60L1/003 ,  B60L3/0069 ,  B60L3/04 ,  B60L9/22 ,  B60L9/28 ,  B60L15/007 ,  B60L2200/26 ,  B60L2210/40 ,  B60L2240/34 ,  Y02T10/7241

Abstract: A vehicle auxiliary power supply that is mounted on a railway vehicle, includes a three-phase inverter circuit that converts DC power or AC power input from an overhead line to desired AC power to supply the AC power to a load, and is connected in parallel with a VVVF inverter device that drives a propulsion motor, wherein a blocking diode that prevents backflow from a side of the three-phase inverter circuit to a side of the overhead line is provided between the overhead line and the three-phase inverter circuit, and a SiC Schottky barrier diode is applied to the blocking diode.

Abstract translation: 安装在铁路车辆上的车辆辅助电源包括三相逆变器电路，其将从架空线路输入的直流电力或交流电力转换为期望的交流电力，以将交流电力提供给负载，并联并联 具有用于驱动推进电动机的VVVF逆变器装置，其中，在架空线路和三相逆变器电路之间设置有防止从三相逆变器电路的一侧向架空线侧的回流的阻塞二极管，以及 将SiC肖特基势垒二极管施加到阻塞二极管。

公开(公告)号：US20130315312A1

公开(公告)日：2013-11-28

申请号：US13823129

申请日：2012-08-22

Applicant: Hiroshi Amano ,  Takeshi Tanaka ,  Kenji Oga

Inventor： Hiroshi Amano ,  Takeshi Tanaka ,  Kenji Oga

IPC: H04N7/36

CPC classification number: H04N19/61 ,  H04N19/119 ,  H04N19/122 ,  H04N19/129 ,  H04N19/157 ,  H04N19/176 ,  H04N19/18 ,  H04N19/44 ,  H04N19/51

Abstract: An image processing apparatus for decoding an image coded in coding processes including (i) prediction on at least one prediction unit (PU) and (ii) frequency transform on transform units (TUs) included in a region including the at least one PU includes a processing unit configured to perform image processing for a predictive image of the at least one PU, depending on a transform order predetermined for the TUs.

Abstract translation: 一种图像处理装置，用于对包括（i）至少一个预测单元（PU）的预测和（ii）包括在包括至少一个PU的区域中的变换单元（TU）上的频率变换的编码处理中编码的图像进行解码，包括 处理单元，被配置为根据针对所述TU预定的变换顺序对所述至少一个PU的预测图像执行图像处理。

公开(公告)号：US08512668B2

公开(公告)日：2013-08-20

申请号：US13068842

申请日：2010-06-22

Applicant: Takeshi Tanaka ,  Hiromichi Kataura ,  Huaping Liu

Inventor： Takeshi Tanaka ,  Hiromichi Kataura ,  Huaping Liu

IPC: D01F9/12

CPC classification number: B82Y40/00 ,  B82Y30/00 ,  C01B32/168

Abstract: To provide a method for separating metallic CNT and semiconducting CNT by treating a CNT-containing gel or a CNT dispersion as combined with a gel, according to a physical separation means to thereby make semiconducting CNT exist in gel and metallic CNT exist in solution, in which the semiconducting CNT adsorbed by gel are collected in a more simplified manner not dissolving the gel.A CNT-containing gel or a CNT dispersion combined with a gel is treated according to a physical separation means of a centrifugal method, a freezing squeezing method, a diffusion method or a permeation method, to thereby make semiconducting CNT exist in gel and metallic CNT exist in solution so that the metallic CNT and the semiconducting CNT are separated from each other, and further, a suitable eluent is made to react on the gel that adsorbs semiconducting CNT to elute the semiconducting CNT from the gel.

Abstract translation: 为了提供一种通过与凝胶结合处理含CNT凝胶或CNT分散体来分离金属CNT和半导体CNT的方法，根据物理分离手段，由此使凝胶中存在半导体CNT，溶液中存在金属CNT， 其中以更简化的方式收集由凝胶吸附的半导体CNT而不溶解凝胶。 根据离心法，冷冻挤压法，扩散法或渗透法的物理分离方法处理含有凝胶或含有CNT的凝胶或凝胶分散体，从而使凝胶和金属CNT中存在半导体CNT 存在于溶液中，使得金属CNT和半导体CNT彼此分离，此外，使合适的洗脱液在凝胶上反应，吸附半导体CNT以从凝胶中洗脱半导体CNT。

公开(公告)号：US08440549B2

公开(公告)日：2013-05-14

申请号：US13237084

申请日：2011-09-20

Applicant: Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

Inventor： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

IPC: H01L21/20 ,  H01L33/32

CPC classification number: H01L21/02581 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262

Abstract: A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

Abstract translation: 半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度 是积极的。

公开(公告)号：US20130063067A1

公开(公告)日：2013-03-14

申请号：US13697804

申请日：2010-07-01

Applicant: Takeshi Tanaka

Inventor： Takeshi Tanaka

IPC: H01L29/161 ,  H02M7/5387 ,  H02P23/00 ,  H01L29/201

CPC classification number: H01L25/18 ,  B60L9/28 ,  B60L15/007 ,  B60L2200/26 ,  H01L25/07 ,  H01L2924/0002 ,  H02M7/003 ,  H02M7/487 ,  Y02T10/645 ,  H01L2924/00

Abstract: A pair of elements that includes a Si-MOSFET and a Si-FWD connected in inverse parallel and operates as a positive side arm of an electric-power conversion apparatus and a pair of elements that operates as a negative side arm of the electric-power conversion apparatus are provided, where the first and second pairs of elements are accommodated in one power semiconductor module to compose a 2-in-1 module, and terminals are included which enables series connection of the pairs of elements.

Abstract translation: 一对元件，其包括反并联连接的Si-MOSFET和Si-FWD，并且作为电力转换装置的正侧臂并且作为电力的负侧臂工作的一对元件 转换装置，其中第一和第二对元件被容纳在一个功率半导体模块中以组成2合1模块，并且包括能够串联连接元件对的端子。

公开(公告)号：US08330596B2

公开(公告)日：2012-12-11

申请号：US12155457

申请日：2008-06-04

Applicant: Takeshi Tanaka ,  Shunzo Yamashita ,  Kiyoshi Aiki

Inventor： Takeshi Tanaka ,  Shunzo Yamashita ,  Kiyoshi Aiki

IPC: G08B1/08

CPC classification number: A61B5/0002 ,  A61B5/02438 ,  A61B5/11 ,  A61B5/7232 ,  A61B2560/045 ,  A61B2562/0219 ,  H04W84/18

Abstract: Provided is a sensor node including: a sensor for measuring biological information; a CPU for acquiring data by driving the sensor; a wireless communication unit for transmitting the data acquired by the CPU; a battery for supplying the control unit, the wireless communication unit, and the sensor with electric power; a RAM for storing the data; a compression unit for compressing the data stored in the RAM when the wireless communication unit cannot carry out the transmission; and a flash memory for storing the compressed data, thereby storing as much sensing data as possible on the sensor node, which is limited in resources, and preventing loss of the sensing data.

Abstract translation: 提供了一种传感器节点，包括：用于测量生物信息的传感器; 用于通过驱动传感器来获取数据的CPU; 用于发送由CPU获取的数据的无线通信单元; 用于向控制单元，无线通信单元和传感器供电的电池; 用于存储数据的RAM; 压缩单元，用于在无线通信单元不能进行发送时压缩存储在RAM中的数据; 以及用于存储压缩数据的闪速存储器，从而在传感器节点上存储尽可能多的感测数据，其在资源上受到限制，并且防止感测数据的丢失。

公开(公告)号：US08314338B2

公开(公告)日：2012-11-20

申请号：US12219343

申请日：2008-07-21

Applicant: Jun Ishii ,  Yasunari Ooyabu ,  Takeshi Tanaka ,  Toshiki Naito

Inventor： Jun Ishii ,  Yasunari Ooyabu ,  Takeshi Tanaka ,  Toshiki Naito

IPC: H05K1/03 ,  H05K1/11 ,  H05K1/14

CPC classification number: H05K3/363 ,  H05K1/056 ,  H05K1/117 ,  H05K1/142 ,  H05K2201/058 ,  H05K2201/09145 ,  H05K2201/09381 ,  H05K2203/167

Abstract: A wired circuit board includes a first wired circuit board and a second wired circuit board disposed to be opposed to the first wired circuit board in the same plane. A first opposed surface of the first wired circuit board facing the second wired circuit board and a second opposed surface of the second wired circuit board facing the first wired circuit board include at least two types of interfitting surfaces extending in different directions so as to mutually interfit the first opposed surface with the second opposed surface.

Abstract translation: 布线电路板包括第一布线电路板和布置成与同一平面中的第一布线电路板相对的第二布线电路板。 面向第二布线电路板的第一布线电路板的第一相对表面和面对第一布线电路板的第二布线电路板的第二相对表面包括沿不同方向延伸的至少两种类型的配合表面，以便相互配合 具有第二相对表面的第一相对表面。

公开(公告)号：US20120256574A1

公开(公告)日：2012-10-11

申请号：US13517904

申请日：2010-01-18

Applicant: Takeshi Tanaka ,  Yasushi Nakayama

Inventor： Takeshi Tanaka ,  Yasushi Nakayama

IPC: H02P6/14 ,  H01L29/20 ,  H01L29/16

CPC classification number: H02M7/003 ,  B60L3/003 ,  B60L7/14 ,  B60L11/1803 ,  B60L15/007 ,  B60L2200/26 ,  H01L2924/0002 ,  Y02T10/645 ,  Y02T10/7005 ,  H01L2924/00

Abstract: A power semiconductor module applied to a power converting apparatus for a railway car includes an element pair formed by connecting an IGBT and an SiC-FWD in anti-parallel to each other and an element pair formed by connecting an Si-IGBT and an SiC-FWD in anti-parallel to each other. The element pair and the element pair are housed in one module and configured as a 2-in-1 module in a manner that the first element pair operates as a positive side arm of the power converting apparatus and the second element pair operates as a negative side arm of the power converting apparatus. The element pairs are formed such that a ratio of an occupied area of SiC-FWD chips to an occupied area of IGBT chips in the element pairs is equal to or higher than 15% and lower than 45%.

Abstract translation: 应用于铁路车辆的电力转换装置的功率半导体模块包括通过将IGBT和SiC-FWD彼此反并联连接而形成的元件对，以及通过连接Si-IGBT和SiC- FWD相互反平行。 元件对和元件对被容纳在一个模块中并且被配置为二合一模块，以使得第一元件对作为功率转换装置的正侧臂工作，第二元件对作为负值 电力转换装置的侧臂。 元件对形成为使得SiC-FWD芯片的占用面积与元件对中的IGBT芯片的占有面积的比率等于或高于15％且低于45％。

公开(公告)号：US08264006B2

公开(公告)日：2012-09-11

申请号：US12772624

申请日：2010-05-03

Applicant: Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

Inventor： Kenji Imanishi ,  Toshihide Kikkawa ,  Takeshi Tanaka ,  Yoshihiko Moriya ,  Yohei Otoki

IPC: H01L29/778 ,  H01L21/20

CPC classification number: H01L21/02581 ,  H01L21/02378 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262

Abstract: A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

Abstract translation: 半导体外延基板包括：单晶基板; 在单晶衬底上外延生长的AlN层; 以及在所述AlN层上外延生长的氮化物半导体层，其中，所述AlN层与所述氮化物半导体层之间的界面的粗糙度大于所述单晶衬底和所述AlN层之间的界面，并且所述AlN层的上表面的倾斜度 是积极的。