Abstract:
A silicon chicklet pedestal for use in a wafer-level test probe of a wafer is provided and includes a main body, first and second opposing faces, and an array of vias formed through the main body to extend between the first and second faces, through which pairs of leads, respectively associated with each via at the first and second faces, are electrically connectable to one another.
Abstract:
There is provided a method for making a wafer including the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.
Abstract:
The present invention provides a method of preventing the build-up of polishing material within low areas of a substrate during polishing. Following the blanket deposition of a first layer, a selectively removable material is deposited over the first layer, wherein the selectively removable material fills the low areas. A surface of the substrate is polished removing the excess first layer and selectively removable material from the surface, leaving the first layer and selectively removable material within the low area. Following polishing, the selectively removable material is removed from the low areas prior to the deposition of a second layer.
Abstract:
There is provided a UV energy curable tape comprising an adhesive material including a UV energy curable oligomer, a UV energy initiator, and a material which emits optical light when the tape composition is substantially fully cured. A semiconductor chip made using the tape is also provided.
Abstract:
A silicon chicklet pedestal for use in a wafer-level test probe of a wafer is provided and includes a main body, first and second opposing faces, and an array of vias formed through the main body to extend between the first and second faces, through which pairs of leads, respectively associated with each via at the first and second faces, are electrically connectable to one another.
Abstract:
There is provided a UV energy curable tape comprising an adhesive material including a UV energy curable oligomer, a UV energy initiator, and a material which emits optical light when the tape composition is substantially fully cured. A semiconductor chip made using the tape is also provided.
Abstract:
A method for inspecting a semiconductor wafer fabricated for image sensing operation that has had a transparent protective tape layer applied to a front or active wafer surface. The method includes quantifying chip defects in the image sensor wafer that lie under the protective layer using automatic disposition equipment.
Abstract:
A silicon chicklet pedestal for use in a wafer-level test probe of a wafer is provided and includes a main body, first and second opposing faces, and an array of vias formed through the main body to extend between the first and second faces, through which pairs of leads, respectively associated with each via at the first and second faces, are electrically connectable to one another.
Abstract:
A method for preventing edge chipping and cracking damage encountered by semiconductor chips in a die picking operation during separation from an adhesive sheet. Also provided is a device for preventing potential edge chipping and cracking damage encountered by a semiconductor chip during die picking processes.
Abstract:
Disclosed are embodiments of a method of removing patterned circuit structures from the surface of a semiconductor wafer. The method embodiments comprise blasting the surface of the semiconductor wafer with particles so as to remove substantially all of the patterned circuit structures. The blasting process is followed by one or more grinding, polishing and/or cleaning processes to remove any remaining circuit structures, to remove any lattice damage and/or to achieve a desired smoothness across the surface of the semiconductor wafer.