公开(公告)号：US20170133285A1

公开(公告)日：2017-05-11

申请号：US15342242

申请日：2016-11-03

Applicant: Tokyo Electron Limited

Inventor： Yuichi Takenaga ,  Daisuke Suzuki ,  Katsuhiko Komori

IPC: H01L21/66 ,  H01L21/324 ,  H01L21/67 ,  H01L21/3215

CPC classification number: H01L22/26 ,  H01L21/2252 ,  H01L21/32155 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/67253 ,  H01L22/10 ,  H01L22/20

Abstract: A heat treatment system includes a heat treatment condition storing unit that stores a heat treatment condition with respect to a doping processing and a diffusion processing; a model storing unit that stores a model representing a relationship between a change of the heat treatment condition and a change of an impurity concentration in an impurity-doped thin film; a heat treatment unit that forms the impurity-doped thin film under the heat treatment condition; a calculating unit that calculates a heat treatment condition of the doping processing and the diffusion processing that causes the impurity concentration in the impurity-doped film to be included within the predetermined range, based on the impurity concentration in the impurity-doped thin film and the model; and an adjusting unit that adjusts the impurity concentration in the impurity-doped thin film to be included within the predetermined range.

公开(公告)号：US09425073B2

公开(公告)日：2016-08-23

申请号：US14464736

申请日：2014-08-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi Onodera ,  Daisuke Suzuki ,  Akinobu Kakimoto

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/24 ,  C30B29/06 ,  C23C16/455 ,  C23C16/56 ,  C30B19/00

CPC classification number: H01L21/67069 ,  C23C16/045 ,  C23C16/24 ,  C23C16/45589 ,  C23C16/56 ,  C30B19/00 ,  C30B29/06 ,  H01L21/0243 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02658

Abstract: A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate is provided. The depression penetrating the insulating film is configured so as to extend to the semiconductor substrate. The method includes: forming a thin film of a semiconductor material along a wall surface that defines the depression; annealing the workpiece to cause the semiconductor material of the thin film to move toward a bottom of the depression and to form an epitaxial region corresponding to crystals of the semiconductor substrate; and etching the thin film.

Abstract translation: 提供了一种用于填充包括形成在半导体衬底上的半导体衬底和绝缘膜的工件的凹陷的凹陷填充方法。 穿透绝缘膜的凹陷构造成延伸到半导体衬底。 该方法包括：沿着限定凹陷的壁面形成半导体材料薄膜; 对工件进行退火，使薄膜的半导体材料向凹部的底部移动，形成对应于半导体基板的晶体的外延区域; 并蚀刻该薄膜。

公开(公告)号：US11587787B2

公开(公告)日：2023-02-21

申请号：US17132656

申请日：2020-12-23

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Yutaka Motoyama

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/306

Abstract: A film forming method includes: forming a laminated film, in which an interface layer, a bulk layer, and a surface layer are laminated in this order, on a base; and crystallizing the laminated film, wherein the bulk layer is formed of a film that is easier to crystallize than the interface layer in crystallizing the laminated film, and wherein the surface layer is formed of a film that is easier to crystallize than the bulk layer in crystallizing the laminated film.

公开(公告)号：US09574284B2

公开(公告)日：2017-02-21

申请号：US15018949

申请日：2016-02-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Youichirou Chiba ,  Hiroki Iriuda ,  Daisuke Suzuki

IPC: H01L21/00 ,  H01L31/02 ,  C30B1/02 ,  H01L21/225 ,  H01L21/324

CPC classification number: C30B1/023 ,  H01L21/2252 ,  H01L21/3247

Abstract: A method of filling a depression of a workpiece is provided. The method includes forming a first thin film made of a semiconductor material substantially not containing an impurity along a wall surface which defines the depression, forming an epitaxial region conforming to crystals of the semiconductor substrate from the semiconductor material of the first thin film moved toward a bottom of the depression by annealing, etching the first thin film remaining on the wall surface, performing gas phase doping upon the epitaxial region, forming a second thin film made of a semiconductor material substantially not containing an impurity along the wall surface, further forming an epitaxial region from the semiconductor material of the second thin film moved toward the bottom of the depression by annealing, and performing gas phase doping upon the second thin film remaining on the wall surface and the epitaxial region.

Abstract translation: 提供了填充工件的凹陷的方法。 该方法包括：形成由沿着限定凹陷的壁表面基本上不含有杂质的半导体材料制成的第一薄膜，从第一薄膜的半导体材料形成符合半导体衬底的晶体的外延区域， 通过退火蚀刻凹陷的底部，蚀刻保留在壁表面上的第一薄膜，对外延区进行气相掺杂，形成由沿着壁表面基本上不含杂质的半导体材料制成的第二薄膜，进一步形成 从第二薄膜的半导体材料的外延区域通过退火向凹陷的底部移动，并且对保留在壁表面和外延区域上的第二薄膜进行气相掺杂。

公开(公告)号：US12252786B2

公开(公告)日：2025-03-18

申请号：US17753004

申请日：2020-08-06

Applicant: Tokyo Electron Limited

Inventor： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Tatsuya Miyahara ,  Keisuke Fujita ,  Masami Oikawa ,  Sena Fujita

IPC: B08B5/00 ,  B08B9/08 ,  B08B13/00 ,  C23C16/44 ,  H01L21/02

Abstract: A cleaning method according to an aspect of the present disclosure includes: supplying a halogen-containing gas that does not contain fluorine to an interior of a processing container that is capable of being exhausted via an exhaust pipe to perform a cleaning; and supplying a fluorine-containing gas to at least one of the interior of the processing container and an interior of the exhaust pipe to perform the cleaning after the supplying the halogen-containing gas to perform the cleaning.

公开(公告)号：US11260433B2

公开(公告)日：2022-03-01

申请号：US16744637

申请日：2020-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro Takezawa ,  Daisuke Suzuki ,  Hiroyuki Hayashi ,  Sena Fujita ,  Tatsuya Miyahara ,  Jyunji Ariga ,  Shinya Kikuchi

IPC: B08B9/027 ,  B08B5/00 ,  H01L21/67

Abstract: There is provided a cleaning method of a substrate processing apparatus comprising cleaning an inside of an exhaust pipe through which a gas of an inside of a processing container is exhausted. The cleaning the inside of the exhaust pipe includes: removing a deposit on a downstream side of an opening/closing valve in the exhaust pipe by supplying a first exhaust pipe cleaning gas containing fluorine to the downstream side of the opening/closing valve in the exhaust pipe in a state in which the opening/closing valve provided in a middle of the exhaust pipe is closed; and removing a deposit on an upstream side of the opening/closing valve in the exhaust pipe by supplying a second exhaust pipe cleaning gas not containing fluorine as a gas constituent element to the inside of the processing container in a state in which the opening/closing valve is opened.

公开(公告)号：US10822714B2

公开(公告)日：2020-11-03

申请号：US15450461

申请日：2017-03-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoichiro Chiba ,  Daisuke Suzuki ,  Kazuhide Hasebe

IPC: C30B1/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/56 ,  C23C16/06 ,  C23C16/458 ,  C23C16/52 ,  C30B29/06 ,  C30B29/08 ,  C30B29/52 ,  C30B29/68

Abstract: A method of growing a crystal in a recess in a substrate on which an insulating film having the recess is formed, includes: forming a first film on the insulating film at a thickness as not to completely fill the recess; etching the first film by an etching gas to remain the first film only in a bottom portion of the recess; annealing the substrate such that the first film in the bottom portion is modified into a crystalline layer; forming a second film on the insulating film and a surface of the crystalline layer at a thickness as not to completely fill the recess; annealing the substrate such that the second film is crystallized from the bottom portion through a solid phase epitaxial growth to form an epitaxial crystal layer; and etching and removing the second film remaining on the substrate by an etching gas.

公开(公告)号：US10304676B2

公开(公告)日：2019-05-28

申请号：US15660394

申请日：2017-07-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro Miyahara ,  Daisuke Suzuki ,  Hiroki Murakami

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/44 ,  C23C16/46 ,  C23C16/52 ,  C23C16/56 ,  H01L21/02 ,  H01L21/32 ,  H01L29/49 ,  H01L29/66 ,  C23C16/455 ,  H01L21/285 ,  H01L21/311

Abstract: A method for forming a nitride film is provided. The method includes preparing a substrate to be processed, the substrate having a first base film formed of a material having a relatively long incubation time and a second base film formed of a material having a relatively short incubation time with respect to a nitride film, forming a nitride film on the substrate by means of ALD or CVD using a raw material gas and a nitriding gas while heating the substrate to a predetermined temperature, and etching nitride on the first base film to be removed by supplying an etching gas to thereby expose a film surface of the first base film, wherein the forming the nitride film and the etching the nitride are repeatedly performed a predetermined number of times to selectively form the nitride film on the second base film.

公开(公告)号：US09865467B2

公开(公告)日：2018-01-09

申请号：US14919381

申请日：2015-10-21

Applicant: TOKYO ELECTRON LIMITED

Inventor： Daisuke Suzuki ,  Youichirou Chiba ,  Takumi Yamada

IPC: H01L21/285 ,  H01L21/02 ,  H01L21/306 ,  H01L21/324 ,  H01L21/768 ,  C30B1/02 ,  C30B29/06 ,  C30B29/08 ,  H01L21/74 ,  C23C16/04

CPC classification number: H01L21/28525 ,  C23C16/045 ,  C30B1/023 ,  C30B29/06 ,  C30B29/08 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/28556 ,  H01L21/324 ,  H01L21/743 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76879

Abstract: There is provided a method of filling a recess of a workpiece, which includes: forming a first thin film made of a semiconductor material along a wall surface defining a recess in a semiconductor substrate; annealing the workpiece within a vessel whose internal process is set to a first pressure, and forming an epitaxial region which is generated by crystallizing the semiconductor material of the first thin film, along a surface defining the recess, without moving the first thin film; forming a second thin film made of the semiconductor material along the wall surface defining the recess; and annealing the workpiece within the vessel whose internal pressure is set to a second pressure lower than the first pressure, and forming a further epitaxial region which is generated by crystallizing the semiconductor material of the second thin film which is moved toward a bottom of the recess.

公开(公告)号：US09646879B2

公开(公告)日：2017-05-09

申请号：US14582243

申请日：2014-12-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu Kakimoto ,  Youichirou Chiba ,  Takumi Yamada ,  Daisuke Suzuki

IPC: H01L21/768 ,  H01L21/285 ,  C30B1/02 ,  C30B29/06 ,  H01L21/67 ,  H01L21/02 ,  C30B25/00

CPC classification number: H01L21/76877 ,  C30B1/023 ,  C30B25/00 ,  C30B29/06 ,  H01L21/02667 ,  H01L21/28525 ,  H01L21/28531 ,  H01L21/67109 ,  H01L21/76879

Abstract: A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate includes: forming an impurity-doped first semiconductor layer along a wall surface which defines the depression; forming, on the first semiconductor layer, a second semiconductor layer which is lower in impurity concentration than the first semiconductor layer and which is smaller in thickness than the first semiconductor layer; annealing the workpiece to form an epitaxial region at the bottom of the depression corresponding to crystals of the semiconductor substrate from the first semiconductor layer and the second semiconductor layer; and etching the first amorphous semiconductor region and the second amorphous semiconductor region.